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    VERTICAL MOSFET Search Results

    VERTICAL MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation

    VERTICAL MOSFET Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2sk mosfet

    Abstract: 2SJ113 2SJ120 2sj119 k312 display K312 2sc2610 2SK1197 2SK511 mosfet 2sk
    Text: HITACHI 5.9 Television and CRT Displays 35 Block Diagram m Video Ro— G B O . Deflection Signal Vertical H orizontal y Deflection' Coil , Vertical ' Deflection , Coil 1 Horizontal Deflection Video output "I Focus _ _ Electrocie” I Ci Vertical Output


    OCR Scan     		2SC2610 2SC2611 2SC4828 2SC26U 2SK296 2sk mosfet 2SJ113 2SJ120 2sj119 k312 display K312 2sc2610 2SK1197 2SK511 mosfet 2sk PDF

    2SJ56 2sk176

    Abstract: 2SK176 2sk1058 2SJ162 HITACHI 2Sk176 2SJ75 2sk133 2Sj48 2sJ50 mosfet 2sj56 2SK1058 MOSFET APPLICATION NOTES 2sk135 application
    Text: HITACHI 35 5.9 Television and CRT Displays B lo ck D ia g ra m Video R o— G H orizon tal y D eflection' Coil , Vertical ' Deflection , Coil 1 I Horizontal Deflection Video output - "I Focus _ _ Electrocie” B O . Deflection Signal m Vertical Ci Vertical


    OCR Scan     		2SC2610 2SC2611 2SC4828 2SC26U 2SK296 2SJ56 2sk176 2SK176 2sk1058 2SJ162 HITACHI 2Sk176 2SJ75 2sk133 2Sj48 2sJ50 mosfet 2sj56 2SK1058 MOSFET APPLICATION NOTES 2sk135 application PDF

    VRF151

    Abstract: vertical mosfet RF POWER VERTICAL MOSFET
    Text: 150W, 50V, 175MHz N-CHANNEL RF POWER VERTICAL MOSFET VRF151 PRELIMINARY INFORMATION BROADBAND HF/VHF VERTICAL D-MOS ISM & MILITARY/COMMERCIAL COMMUNICATIONS APPLICATIONS Features • • • • • • • 150W WITH 14dB TYPICAL GAIN @ 175MHz, 50V 150W WITH 22dB TYPICAL GAIN @ 30MHz, 50V


    Original     		175MHz VRF151 175MHz, 30MHz, VRF151 vertical mosfet RF POWER VERTICAL MOSFET PDF

    VRF150

    Abstract: hf power transistor mosfet 30MHZ 150W RF POWER VERTICAL MOSFET
    Text: 150W, 50V, 150MHz N-CHANNEL RF POWER VERTICAL MOSFET VRF150 PRELIMINARY INFORMATION BROADBAND HF/VHF VERTICAL D-MOS ISM & MILITARY/COMMERCIAL COMMUNICATIONS APPLICATIONS Features • • • • • • • 150W WITH 10dB TYPICAL GAIN @ 150MHz, 50V 150W WITH 18dB MIN GAIN @ 30MHz, 50V


    Original     		150MHz VRF150 150MHz, 30MHz, VRF150 250mA, hf power transistor mosfet 30MHZ 150W RF POWER VERTICAL MOSFET PDF

    TELEVISION EHT TRANSFORMERS

    Abstract: TDA8359J TDA8359J equivalent TDA9567H philips colour television picture tube pin volt PHILIPS UOC zenerdiode 218 spike guard circuit diagram EHT COIL tda8357
    Text: APPLICATION NOTE Application information for TDA8359J deflection output circuit AN 00039 Philips Semiconductors Philips Semiconductors TDA8359J Vertical deflection output Preliminary Application Note AN00039 2 Philips Semiconductors TDA8359J Vertical deflection output


    Original     		TDA8359J AN00039 TELEVISION EHT TRANSFORMERS TDA8359J TDA8359J equivalent TDA9567H philips colour television picture tube pin volt PHILIPS UOC zenerdiode 218 spike guard circuit diagram EHT COIL tda8357 PDF

    d2625

    Abstract: MD2130 ultrasonic piezoelectric transducer driver DN2625K6-G B0521 125OC DN2625 DN2625K4-G "thermal via" PCB D-PAK DN2625DK6-G
    Text: Supertex inc. DN2625 N-Channel Depletion-Mode Vertical DMOS FET in Single and Dual Options Features General Description ► ► ► ► ► ► The Supertex DN2625 is a low threshold depletion-mode normally-on transistor utilizing an advanced vertical DMOS


    Original     		DN2625 DN2625 DSFP-DN2625 B052110 d2625 MD2130 ultrasonic piezoelectric transducer driver DN2625K6-G B0521 125OC DN2625K4-G "thermal via" PCB D-PAK DN2625DK6-G PDF

    VIPER flyback 20W

    Abstract: smps 10w 5V VIPer Design Software viper flyback converter design viper smps Viper20 application VIPER flyback 10W schematics smps satellite receiver VIPER50 application note OFF-LINE SMPS USING VIPer100
    Text: DISCRETE AND STANDARD ICs GROUP VIPer20 NEW VERTICAL INTELLIGENT POWER ENHANCED REGULATOR The latest addition to ST’s range of Vertical Intelligent Power enhanced regulator ICs is the VIPer20, a unique monolithic combination of a state-of-theart current mode Pulse Width Modulation


    Original     		VIPer20 VIPer20, 200kHz, PowerSO-10 VIPer100 VIPer100A VIPer31 VIPER flyback 20W smps 10w 5V VIPer Design Software viper flyback converter design viper smps Viper20 application VIPER flyback 10W schematics smps satellite receiver VIPER50 application note OFF-LINE SMPS USING VIPer100 PDF

    Cross Reference power MOSFET

    Abstract: T0-226AE Power MOSFET Cross Reference Guide
    Text: Page What's An Enhancement-Mode, Silicon Gate, Power M OSFET?. “Lateral MOSFETs vs. Vertical Devices — the big difference" . What is TMOS? .


    OCR Scan     		O-220AB T0-220 O-220 Cross Reference power MOSFET T0-226AE Power MOSFET Cross Reference Guide PDF

    Untitled

    Abstract: No abstract text available
    Text: SO T8 9 BSS87 200 V, N-channel vertical D-MOS transistor 9 December 2014 Product data sheet 1. General description N-channel enhancement mode vertical Double-Diffused Field-Effect Transistor DMOSFET in a SOT89 (SC-62) medium power and flat lead Surface-Mounted Device


    Original     		BSS87 SC-62) PDF

    Untitled

    Abstract: No abstract text available
    Text: SO T8 9 BSS192 240 V, P-channel vertical D-MOS transistor 12 December 2014 Product data sheet 1. General description P-channel enhancement mode vertical Double-Diffused Field-Effect Transistor DMOSFET in a SOT89 (SC-62) medium power and flat lead Surface Mounted Device


    Original     		BSS192 SC-62) PDF

    FET SOT-89 N-Channel

    Abstract: CPC3710C ignition module sot89 fet
    Text: CPC3710C N-Channel Depletion-Mode Vertical DMOS FETs BVDSX/ BVDGX 250V RDS ON (max) 10Ω IDSS (min) Package 220mA SOT-89 Description The CPC3710C is an N-channel depletion mode field effect transistor (FET) that utilizes Clare’s proprietary third generation vertical DMOS process. Third


    Original     		CPC3710C 220mA OT-89 CPC3710C DS-CPC3710C-R00A FET SOT-89 N-Channel ignition module sot89 fet PDF

    RY115

    Abstract: CPC3714C R00a D 4242 transistor
    Text: CPC3714C N-Channel Depletion-Mode Vertical DMOS FETs BVDSX/ BVDGX 350V RDS ON (max) 14Ω IDSS (min) Package 240mA SOT-89 Description The CPC3714C is an N-channel depletion mode field effect transistor (FET) that utilizes Clare’s proprietary third generation vertical DMOS process. Third


    Original     		CPC3714C 240mA OT-89 CPC3714C DS-CPC3714C-R00A RY115 R00a D 4242 transistor PDF

    FET SOT-89 N-Channel

    Abstract: D 4242 transistor CPC3720C FET SOT-89
    Text: CPC3720C N-Channel Depletion-Mode Vertical DMOS FETs BVDSX/ BVDGX 350V RDS ON (max) 22Ω IDSS (min) Package 130mA SOT-89 Description The CPC3720C is an N-channel depletion mode field effect transistor (FET) that utilizes Clare’s proprietary third generation vertical DMOS process. Third


    Original     		CPC3720C 130mA OT-89 CPC3720C DS-CPC3720C-R00A FET SOT-89 N-Channel D 4242 transistor FET SOT-89 PDF

    depletion mode fet

    Abstract: CPC3730C MOSFET 350V SOT-89
    Text: CPC3730C N-Channel Depletion-Mode Vertical DMOS FETs BVDSX/ BVDGX 350V RDS ON (max) 30Ω IDSS (min) Package 140mA SOT-89 Description The CPC3730C is an N-channel depletion mode field effect transistor (FET) that utilizes Clare’s proprietary third generation vertical DMOS process. Third


    Original     		CPC3730C 140mA OT-89 CPC3730C DS-CPC3730C-R00B depletion mode fet MOSFET 350V SOT-89 PDF

    D2625

    Abstract: DN2625K4-G DN2625K6-G MD2130 125OC DN2625 DN2625DK6-G "thermal via" PCB D-PAK K1 transistor array
    Text: DN2625 N-Channel Depletion-Mode Vertical DMOS FET in Single and Dual Options Features General Description ► ► ► ► ► ► The Supertex DN2625 is a low threshold depletion-mode normally-on transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing


    Original     		DN2625 DN2625 DSFP-DN2625 A092409 D2625 DN2625K4-G DN2625K6-G MD2130 125OC DN2625DK6-G "thermal via" PCB D-PAK K1 transistor array PDF

    K614

    Abstract: top mark 0506
    Text: DN2625 N-Channel Depletion-Mode Vertical DMOS FET in Single and Dual Options Features General Description ► ► ► ► ► ► The Supertex DN2625 is a low threshold depletion-mode normally-on transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing


    Original     		DN2625 MD2130 DSFP-DN2625 A121908 K614 top mark 0506 PDF

    d2625

    Abstract: ultrasonic piezoelectric transducer driver ultrasonic transducer circuit ultrasound piezoelectric design datasheet DN2625DK6 mos fet marking k4 tip 222 TRANSISTOR Ultrasonic Transducer application notes DN2625 DN2625K4-G
    Text: DN2625 N-Channel Depletion-Mode Vertical DMOS FET in Single and Dual Options Features General Description ► ► ► ► ► ► The Supertex DN2625 is a low threshold depletion-mode normally-on transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing


    Original     		DN2625 DN2625 DSFP-DN2625 A041409 d2625 ultrasonic piezoelectric transducer driver ultrasonic transducer circuit ultrasound piezoelectric design datasheet DN2625DK6 mos fet marking k4 tip 222 TRANSISTOR Ultrasonic Transducer application notes DN2625K4-G PDF

    2SJ127

    Abstract: 2SK1275 2SK1202 HA11511CNT 2SK557 2sc2610 2SK551 2SK296 2SC4927 2SC4692
    Text: HITACHI 35 5.9 Television and CRT Displays B lo ck D ia g ra m Video R o— G "I Focus _ _ Electrocie” - B O H o riz o n ta l y D eflection' Coil , Vertical ' Deflection , Coil 1 I H orizontal Deflection Video outp u t . Deflection Signal m Vertical


    OCR Scan     		2SC2610 2SC2611 2SC4828 2SC26U 2SK296 2SJ127 2SK1275 2SK1202 HA11511CNT 2SK557 2sc2610 2SK551 2SC4927 2SC4692 PDF

    JFET TRANSISTOR REPLACEMENT GUIDE j201

    Abstract: J201 spice J108 SOT-23 FET DATASHEET OF TRANSISTOR 2N5485 JFET TRANSISTOR REPLACEMENT GUIDE Direct replacement to LH0033 FET equivalent of 2N4352 2N4352 FET EQUIVALENT s0 sot-23 mosfet U402 N CHANNEL FET
    Text: LLC 2002 Short Form Catalog ANALOG SOLUTIONS: Amplifiers & Buffers Power Management MOSFETs High Speed Lateral & Vertical DMOS Switches & MOSFETs JFETs MOSFET Drivers Custom Solutions Calogic LLC, 237 Whitney Place, Fremont, CA 94539 • http://www.calogic.net


    Original     		OT-23 JFET TRANSISTOR REPLACEMENT GUIDE j201 J201 spice J108 SOT-23 FET DATASHEET OF TRANSISTOR 2N5485 JFET TRANSISTOR REPLACEMENT GUIDE Direct replacement to LH0033 FET equivalent of 2N4352 2N4352 FET EQUIVALENT s0 sot-23 mosfet U402 N CHANNEL FET PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiHP8N50D www.vishay.com Vishay Siliconix D Series Power MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the


    Original     		SiHP8N50D 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Obsolete. Alternative is BSS123. ZXM41N10F SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL D MOSFET FEATURES • BVDSS = 100V • Low Threshold DEVICE MARKING • 410 ABSOLUTE MAXIMUM RATINGS PINOUT TOP VIEW PARAMETER SYMBOL SOT23 VALUE UNIT Drain-source voltage


    Original     		BSS123. ZXM41N10F PDF

    Si4884DY

    Abstract: No abstract text available
    Text: Click Here & Upgrade PDF Complete Expanded Features Unlimited Pages Documents SPICE Device Model Si4884DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS


    Original     		Si4884DY 18-Jul-08 PDF

    Si4874DY

    Abstract: No abstract text available
    Text: Click Here & Upgrade PDF Complete Expanded Features Unlimited Pages Documents SPICE Device Model Si4874DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS


    Original     		Si4874DY 18-Jul-08 PDF

    Si4884DY

    Abstract: No abstract text available
    Text: Click Here & Upgrade PDF Complete Expanded Features Unlimited Pages Documents SPICE Device Model Si4884DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS


    Original     		Si4884DY 17-May-04 PDF