YTFP450
Abstract: SC651
Text: FIELD EFFECT TRANSISTOR YTFP450 SILICON N CHANNEL MOS TYPE tt-MOSH HIGH SPEED,HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS CHOPPER REGULATOR,DC-DC CONVERTER AND HOTOR U nit in mm ORIVE APPLICATIONS, 159M A X . FEATURES: 0Z2±aZ A m • Low Drain-Source ON Resistance :
|
OCR Scan
|
PDF
|
YTFP450
VDS-10V,
00A/ps
YTFP450
SC651
|
YTFP250
Abstract: No abstract text available
Text: TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE it - YTFP250 MOSI INDUSTRIAL APPLICATIONS Unit ln nun HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. 1&9MAX. CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR ^12±Û 8 DRIVE APPLICATIONS. A FEATURES:
|
OCR Scan
|
PDF
|
YTFP250
070fl
50ain
VDS-10V,
ID-16A
ID-16A
IDR-30A
YTFP250
|
YTFP451
Abstract: No abstract text available
Text: TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE ir - YTFP451 MOSI INDUSTRIAL APPLICATIONS Unit in am HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR 1&9MAX. 0aa±Q8 DRIVE APPLICATIONS. dl FEATURES:
|
OCR Scan
|
PDF
|
YTFP451
500nA
250uA
Ta-25
-55M50
VDS-25V,
ID-16A
VGS-10V
IDR-13A
YTFP451
|
2SK1377
Abstract: 10R1B
Text: 2SK1377 FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS T Y P E tt-MOS INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS. SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. 1Û3MAX. 0 1 2 ± d 2 /- FEATURES:
|
OCR Scan
|
PDF
|
2SK1377
2SK1377
10R1B
|
MP6702
Abstract: No abstract text available
Text: GTR MODULE SILICON N CHANNEL MOS TYPE MP6702 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. Unit in mm • The Drain is Isolated from Case. • 6 MOS FETs are Built-in to 1 Package. • With Built-in Free Wheeling Diode. • Low Drain-Source ON Resistance
|
OCR Scan
|
PDF
|
MP6702
MF6702
MP6702
|
Untitled
Abstract: No abstract text available
Text: FLM7785-4C FUJITSU Internally Matched Power GaAs FETs FEATURES • • • • • • High Output Power: P ^ b = 36dBm Typ. High Gain: G ^ b = 7.0dB (Typ.) High PAE: riadd = 30% (Typ.) Broad Band: 7.7 ~ 8.5GHz Impedance Matched Zin/Zout = 50Q Hermetically Sealed Package
|
OCR Scan
|
PDF
|
FLM7785-4C
36dBm
FLM7785-4C
FLM7177-18DA
|
Untitled
Abstract: No abstract text available
Text: FLM10I1-8C F| .g p -,. Internally Matched Power GaAs FETs r UJ11 j U FEATURES • High Output Power: P ^ b = 38.5dBm Typ. • High Gain: G ^ b = 5.0dB (Typ.) • High PAE: r iadd = 22% (Typ.) • Broad Band: 10.7 ~ 11.7GHz • Impedance Matched Zin/Zout = 50Q
|
OCR Scan
|
PDF
|
FLM10I1-8C
FLM1011-8C
FLM1011-8C
|
2sk184
Abstract: No abstract text available
Text: TO S H IBA 2SK184 TO S H IB A FIELD EFFECT TRANSISTOR SILICON N C HANN EL JUNCTION TYPE 2 S K 1 84 Unit in mm LO W NOISE A U D IO AMPLIFIER APPLICATIONS 4.2MAX. • • • High |Yfs| : |Yfc| = 15mS Typ. (VDS = 10V, VGS = 0) High Breakdown Voltage : VGDg= —50V
|
OCR Scan
|
PDF
|
2SK184
55MAX.
120Hz
2sk184
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA DISCRETE/OPTO 45E D ^□^7250 0017^7^ TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (ir - fl • TOSM - YTFP251 MOSI) INDUSTRIAL APPLICATIONS Unit in HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. l&SMAX. CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR
|
OCR Scan
|
PDF
|
YTFP251
070fl
lDSS-250uA
250uA
Ta-25Â
f100V
ID-30A
IDR-30A
00A/us
|
iha 25
Abstract: U36-3
Text: O S fé F E T rë • 3 S K 1 il » 2 7 ffliÊ : UHF TV a MS. Tz—tMffîÎÊHm, i mmo m ~X g fë S m S+ M V d s V V g s (V)* M i É : VHF TV lYfsl(niS) 17.00 2.00 30 Ciss(pF) 150 Crss(pF) Tch("C) 125 PG(dB) # â : mnmmo « é ® „ fi Vos(V)* m s .m
|
OCR Scan
|
PDF
|
800MHz,
Id-10mA,
900MHz
10hiA,
iha 25
U36-3
|
3SK181
Abstract: C213G Ig21 J-044
Text: 3SK181 N 'C h a n n e l E n h a n c e m e n t M O S S ili c o n F E T D u a l G ate 3044 High-Frequency General-Purpose Am p Applications 'Z 2 1 X A A p p lic atio n s . FM tunorc and VHF tuners Features . Enhancement type . Easy AGC (Cut o f f a t V G 2 S = o v >
|
OCR Scan
|
PDF
|
3SK181
C213GÃ
lDS-100uA
XGl-10uA,
VDS-10V
100UA
VDS-10V,
100UA
VDSb10V
3SK181
C213G
Ig21
J-044
|
5HN01N
Abstract: No abstract text available
Text: Ordering number : ENN6638 j N-Channel Silicon MOSFET 5HN01N IS A fÊ Y O i Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON-resistance. • Ultrahigh-speed switching. • 4V drive. unit : mm 2178 Specifications Absolute Maximum Ratings
|
OCR Scan
|
PDF
|
ENN6638
5HN01N
5HN01N]
|
RL56
Abstract: CA6V
Text: Primary Regulators PQ1PF1 PQ1PF1 Primary Regulator for Switching Power Supply 50W Class • Features ■ Outline Dimensions (Unit : mm) • 5-terminal lead forming package (equivalent to TO-220) • Built-in oscillation circuit (oscillation frequency : TYP. 100kHz)
|
OCR Scan
|
PDF
|
O-220)
100kHz)
RL56
CA6V
|
for1a
Abstract: 2sk82 me75es JEC ELECTRONICS bms75g5 U511-1
Text: Tfl D Ë J ti4E7S5S □ D i a n a 6427525 N E C 3 ELECTRONICS ’v. ' 98D INC - •*' 18993 * ' ••*“- .1 MOS D *./*.•Vf'-^ -•* ' F I E L D~ E F F E C T 'T R A X S I S T C F, ELECTH0N DEVICE 2SK82 F A S T S W I T C H I N G N - C H A N N E L ' S I L I CON
|
OCR Scan
|
PDF
|
23K82
73ANS
U5--111
NECTCKJ22S3S
for1a
2sk82
me75es
JEC ELECTRONICS
bms75g5
U511-1
|
|
|
70H40
Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
Text: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©
|
OCR Scan
|
PDF
|
2SA1162
2SA1163
2SC1815
2SA1015
2SC2458
2SC2459
2SA1048
2SA1049
2SC2712
2SC2713
70H40
transistor equivalent d2012
2SC734 equivalent
3sk73 equivalent
2sb502
2sa776 bl
2sc2075 equivalent
2sk For Low Noise Audio Amplifier Applications
2sa970 BL equivalent
2sa776 gr
|
fujitsu gaas fet
Abstract: FLK027WG FLK027
Text: FLK027WG X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P-|<jB = 24.0dBm Typ. High Gain: G ^ b = 7.0dB(Typ.) High PAE: riadd = 32%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK027WG is a power GaAs FET that is designed for general
|
OCR Scan
|
PDF
|
FLK027WG
FLK027WG
FCSI0598M200
fujitsu gaas fet
FLK027
|
2SK422
Abstract: 2SK42-2 LD06A
Text: FIELD EFFECT TRANSISTOR 2SK422 SILICON N CHANNEL MOS TYPE ^-M OS Unit in mm HIGH SPEED SWITCHING APPLICATIONS. DC-DC CONVERTER AND INTERFACE APPLICATIONS. &1MAX. FEATURES : . Excellent Switching Times . High Forward Transfer Admittance Low Leakage Current
|
OCR Scan
|
PDF
|
2SK422
220mS
75MAX
2SK422
2SK42-2
LD06A
|
ytfp250
Abstract: No abstract text available
Text: FIELD EFFECT TRANSISTOR YTFP250 SILICON N CHANNEL MOS TY P E jr-MOSii HIGH SPEED,HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS CHOPPER REGULATOR,DC-DC CONVERTER AND HOTOR _ U n it DRIVE APPLICATIONS. 1&9M AX. in mm 0 3 .2 * 1 1 2
|
OCR Scan
|
PDF
|
YTFP250
VGS-10V,
ytfp250
|
2SJ72
Abstract: 2SK147 Toshiba 2SK147 2SK147 toshiba 2sk147 BL Toshiba 2SJ72 Low noise audio amplifier
Text: SILICON N CHANNEL JUNCTION TYPE 2SK147 Unit in mm LOW NOISE AUDIO AMPLIFIER APPLICATIONS. S.1MAX. FEATURES: • High Iyfs | : Vfs|=40mS(Typ. (VDS-10V, V g s ^O, lDSS“5mA) 0.7SUAX * :High Breakdown Voltage : V g d S“-40V 1.ÜMAX. * 'Low Noise : NF=1.0dE (Typ.)
|
OCR Scan
|
PDF
|
2SK147
Vgbsh-40V
100fi)
600mW
2SJ72.
90MAX.
60MAX.
-30Vr
-100WA
VDS-10V,
2SJ72
2SK147
Toshiba 2SK147
2SK147 toshiba
2sk147 BL
Toshiba 2SJ72
Low noise audio amplifier
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM5964-30L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 34.5 dBm, - Single carrier level • H i g h power - PidB = dBm at 5.9 GHz to 6.4 GHz
|
OCR Scan
|
PDF
|
TIM5964-30L
MW50810196
|
Untitled
Abstract: No abstract text available
Text: ,TOSHIBA {DISCRETE/OPTO}9097250 TOSHIBA DISCRETE/OPTO TO SH IBA SEMICONDUCTOR TO DE I TDTTSSD GDlt.411 □ Ï 90D 16411 DT-3^S?7 TOSHIBA GTR MODULE MG 3 O G 2 DM 1 TECHNICAL DATA SILICON N CHANNEL MOS TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.
|
OCR Scan
|
PDF
|
-205il
MG30G2DM1-5*
|
Untitled
Abstract: No abstract text available
Text: TT TOSHIBA í D I S C R E T E / O P T O J 9097250 ¿/oSììba T O S H IB A DGl hTD S 7 dFI^G TVESG 99D D I S C R E T E /O P T O 16902 TOSHIBA FIELD EFFECT TR A N S I S T O R SEMICONDUCTOR YTF841 SILICON N C H A N N E L MOS TYPE TECHNICAL DATA ( 7T-M0S I )
|
OCR Scan
|
PDF
|
YTF841
250uA
VGS-10V
00A/us
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA DISCRETE/OPTO 4SE » • TGITBSD D D 1 7 ti ñ G T «TOSM TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (ir - YTFP253 MOSI) INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HICH CURRENT SWITCHING APPLICATIONS. aieuAi. CHOPPER REGULATOR. DC-DC CONVERTER AND MOTOR
|
OCR Scan
|
PDF
|
YTFP253
0-09ft
100nA
-250u
Ta-25â
ID-30A
VGS-10V
IDR-30A
00A/us
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA DISCRETE/OPTO 4SE D TOSHIBA FIELD EFFEC T TRANSISTOR SILICON N C H A N N EL MOS T Y P E (tt - • CJ D C1 7 2 S G □□ITTÔÔ 4 «TO S M - YTFP453 MOSI) 'T 3A - ' l INDUSTRIAL APPLICATIONS Unit in Bin HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.
|
OCR Scan
|
PDF
|
YTFP453
IDSS-250u
VDS-450V
I0-25O
H360V
VGS-10V
Ta-25Â
IDR-12A
dlQR/dt-100A/us
|