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    Rochester Electronics LLC 2SK1470-TD-E

    NCH 4V DRIVE SERIES
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    DigiKey 2SK1470-TD-E Bulk 888
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    onsemi 2SK1470-TD-E

    2SK1470 - N-Channel 4V Drive Series '
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    Rochester Electronics 2SK1470-TD-E 9,112 1
    • 1 $0.325
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    2SK147 Datasheets (55)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK147 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SK147 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK147 Unknown FET Data Book Scan PDF
    2SK147 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SK147 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SK147 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SK147 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK147 Sanyo Semiconductor Very High-Speed Switching Applications Scan PDF
    2SK147 Toshiba Silicon N-Channel JFET Scan PDF
    2SK1470 Sanyo Semiconductor Ultrahigh-speed switching Original PDF
    2SK1470 Unknown FET Data Book Scan PDF
    2SK1470 Sanyo Semiconductor Ultra High Speed Switching MOSFETS Scan PDF
    2SK1470 Sanyo Semiconductor PCP Type Transistors, XP5 / XP6 Type Transistors Scan PDF
    2SK1471 Sanyo Semiconductor Ultrahigh-speed switching Original PDF
    2SK1471 Unknown N-Channel Power MOSFET Scan PDF
    2SK1471 Unknown FET Data Book Scan PDF
    2SK1471 Sanyo Semiconductor TP Type / MP Type Transistors Scan PDF
    2SK1471 Sanyo Semiconductor Ultra High Speed Switching MOSFETS Scan PDF
    2SK1471FA Unknown N-Channel Power MOSFET Scan PDF
    2SK1472 Sanyo Semiconductor Ultrahigh-Speed Switching Applications Original PDF

    2SK147 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    3772-1

    Abstract: 2SK1471
    Text: Ordering number:EN3772A N-Channel Silicon MOSFET 2SK1471 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2083B [2SK1471] 2.3 1.5 6.5 5.0 0.5 7.0 5.5 4 1.2


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    EN3772A 2SK1471 2083B 2SK1471] 2092B 3772-1 2SK1471 PDF

    Untitled

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK1478 Silicon N-Channel Power F-MOS FET • Features unit: mm 4.2±0.2 10.0±0.2 5.5±0.2 4.2±0.2 2.7±0.2 7.5±0.2 4.0 1.4±0.1 0.8±0.1 1.3±0.2 0.5 +0.2 –0.1 ea s ht e v tp is :// it pa fo na llo so win ni g c. U co R .jp L a /s bo


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    2SK1478 PDF

    2SK1474

    Abstract: No abstract text available
    Text: Ordering number:EN3775A N-Channel Silicon MOSFET 2SK1474 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2083B [2SK1474] 2.3 1.5 6.5 5.0 0.5 7.0 5.5 4 1.2


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    EN3775A 2SK1474 2083B 2SK1474] 2092B 2SK1474 PDF

    2SK1475

    Abstract: No abstract text available
    Text: Ordering number:EN3776A N-Channel Silicon MOSFET 2SK1475 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2083B [2SK1475] 2.3 1.5 6.5 5.0 0.5 7.0 5.5 4 1.2


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    EN3776A 2SK1475 2083B 2SK1475] 2092B 2SK1475 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK1477 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V)30 I(D) Max. (A)12 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)150 Minimum Operating Temp (øC)


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    2SK1477 PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number:EN3772A N-Channel Silicon MOSFET 2SK1471 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2083B [2SK1471] 2.3 1.5 6.5 5.0 0.5 7.0 5.5 4 1.2


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    EN3772A 2SK1471 2083B 2SK1471] 2092B PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK1478 Power F-MOS FETs 2SK1478 Silicon N-Channel Power F-MOS Unit : mm ON-resistance RDS on : R DS(on)= 0.4Ω(typ) secondary breakdown ● High 2.7±0.2 switching : tf = 44ns(typ) 16.7±0.3 ● No 5.5±0.2 breakdown voltage, large allowable power dissipation


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    2SK1478 100ms PDF

    3773 P

    Abstract: 2SK1472
    Text: Ordering number:EN3773A N-Channel Silicon MOSFET 2SK1472 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2083B [2SK1472] 2.3 1.5 6.5 5.0 0.5 7.0 5.5 4 1.2


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    EN3773A 2SK1472 2083B 2SK1472] 2092B 3773 P 2SK1472 PDF

    2SK1473

    Abstract: EN3774
    Text: Ordering number:EN3774 N-Channel Silicon MOSFET 2SK1473 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2062A [2SK1473] 4.5 1.6 2.5 1.0 0.4 0.5 3 1.5 2 4.25max


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    EN3774 2SK1473 2SK1473] 25max 2SK1473 EN3774 PDF

    2SK1470

    Abstract: 3771
    Text: Ordering number:EN3771A N-Channel Silicon MOSFET 2SK1470 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2062A [2SK1470] 4.5 1.6 2.5 1.0 0.4 0.5 3 1.5 2 4.25max


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    EN3771A 2SK1470 2SK1470] 25max 2SK1470 3771 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK1472 2083A LD L o w D rive S eries V Dss — 6 0 V 2092A N Channel Power M OS F ET F e a tu re s •Low ON resistance. • Very high-speed switching. • Low-voltage drive. A b so lu te M ax im u m R a tin g s a tT a = 25°C D rain to Source Voltage V dss


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    2SK1472 VD0-30V 71993TH PDF

    3773A

    Abstract: 2SK1472
    Text: Ordering number: E N 3 7 7 3 A 2SK1472 N0.3773A N-Channel MOS Silicon FET Very High-Speed Switching Applications i F eatu res - Low ON resistance. • Very high-speed switching. • Low-voltage drive. A b solu te M axim um R atin gs at Ta = 25°C Drain to Source Voltage


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    EN3773A 2SK1472 100//A 3773A PDF

    IFN147

    Abstract: No abstract text available
    Text: E6 9-97 IFN147 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR Absolute maximum ratings at TA = 25°C • LOW NOISE AUDIO AMPLIFIER • Equivalent to Japanese 2SK147 Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current 10 mA


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    IFN147 2SK147 NJ450 00Q0BG4 IFN147 PDF

    2SK1474

    Abstract: 3775A M19-6
    Text: 2SK1474 LD Low Drive Series V Ds s = 1 0 0 V 2 Q83 A_ 2092 A N Channel Power MOSFET 3775A F e a tu re s • Low ON resistance. •Very high-speed switching. • Low-voltage drive. bso iu te M ax im u m R a tin g s a t Ta = 25°C D rain to Source Voltage


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    2SK1474 2092A PWS10/ 100//A DD13Ti3 2SK1474 3775A M19-6 PDF

    EN3774

    Abstract: 2SK1473
    Text: Ordering number:EN3774 _ 2SK1473 N o.3774 N -C hannel MOS Silicon FE T Very High-Speed Switching Applications Features • Low ON resistan ce. • V ery high-speed sw itching. •Low-voltage drive. ^ s o lu te M a x im u m R a tin g s a t T a = 25°C


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    EN3774 2SK1473 250mm2 PDF

    2092A

    Abstract: No abstract text available
    Text: 2SK1475 2092A 2083A LD L o w D rive S eries VDSs = 1 0 0 V N Channel P o w er M O S F E T F eatures • Low ON resistance. • Very high-speed switching. • Low-voltage drive. A bsolute M aximum R atings atT a = 25°C Drain to Source Voltage V dss Gate to Source Voltage


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    2SK1475 83093TH 2092A PDF

    2SK243-2

    Abstract: 2SK2432 2sk1470
    Text: • LD Series Lineup VDSS = 60V, N-channel Absolute maximum ratings atTa = 25°C Type No. Package VfiSS VG8S *D A 2SK1470 CP 0.4 2.0 PCP +15 TP 2SK1472 2SK2432 ZP 0.9/1.2 0.4 45 0.45/0.6 0.35/0.45 2.0 150 1.2/1.6 0.9/1.2 1.0 45 30 0.08/0.11 0.06/0.08 8.0


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    2SK1846 2SK1470 2SK1726 2SK1471 2SK1472 2SK2432 2SK1898 2SK1899 2SK1900 2SK21G4 2SK243-2 PDF

    2SJ72

    Abstract: 2SK147 Toshiba 2SK147 2SK147 toshiba 2sk147 BL Toshiba 2SJ72 Low noise audio amplifier
    Text: SILICON N CHANNEL JUNCTION TYPE 2SK147 Unit in mm LOW NOISE AUDIO AMPLIFIER APPLICATIONS. S.1MAX. FEATURES: • High Iyfs | : Vfs|=40mS(Typ. (VDS-10V, V g s ^O, lDSS“5mA) 0.7SUAX * :High Breakdown Voltage : V g d S“-40V 1.ÜMAX. * 'Low Noise : NF=1.0dE (Typ.)


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    2SK147 Vgbsh-40V 100fi) 600mW 2SJ72. 90MAX. 60MAX. -30Vr -100WA VDS-10V, 2SJ72 2SK147 Toshiba 2SK147 2SK147 toshiba 2sk147 BL Toshiba 2SJ72 Low noise audio amplifier PDF

    2sk1478

    Abstract: No abstract text available
    Text: Panasonic P o w e r F -M O S F E T s 2SK1478 Silicon N-Channel Power F-MOS • Features • Low ON-resistance R ds oii : R ds(oii)= 0.4£2(typ) • High-speed switching : tf = 44ns(typ) • No secondary breakdown • High breakdown voltage, large allowable power dissipation


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    2SK1478 2sk1478 PDF

    2SK1470

    Abstract: No abstract text available
    Text: 2SK1470 m LD L o w D rive S eries V Ds s ~ 6 0 V 2062 N Channel Power M OSFET •1.3771A F e a tu r e s • Low ON re sistan ce . • V ery high-sp eed sw itch in g . ■ Low -voltage driv e. ) s o lu te M a x im u m R a tin g s a t T a = 25°C D rain to Source V oltage


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    2SK1470 71993T 2SK1470 PDF

    d3s diode

    Abstract: DIODE d3s 2092A
    Text: 2SK1471 LD L o w D rive S eries V D3s = 6 0 V 2083 A2092A N Channel Power M OSFET E 3772A F e a tu re s • Low ON resistance. •Very high-speed switching. • Low-voltage drive. b so lu te M ax im u m R a tin g s a t Ta = 25°C D rain to Source Voltage


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    2SK1471 A2092A 71993TH d3s diode DIODE d3s 2092A PDF

    3776a

    Abstract: EN3776A 2SK1475
    Text: Ordering n u m b e r:EN3 7 7 6 A 2SK1475 N0.3776A N-Channel MOS Silicon FET i Very High-Speed Sw itching A pplications F eatu res •Low ON resistance. ■Very high-speed switching. • Low-voltage drive. A bsolute M axim um R atings a tT a = 25°C Drain to Source Voltage


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    EN3776A 2SK1475 3776a PDF

    bd7s

    Abstract: 2SK1471 2083A 0d13
    Text: 2SK1471 2083A LD L o w D rive S eries V Dss = 6 0 V 2092A N Channel Power MOSFET 3772A Features • Low ON resistance. • Very high-speed switching. •Low-voltage drive. b solute M axim um R atings at Ta = 25°C Drain to Source Voltage V DSS Gate to Source Voltage


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    2SK1471 10//S, bd7s 2SK1471 2083A 0d13 PDF

    2SK1731

    Abstract: 2SK2637 2SK1871 2SK2626 2sk2636 2SK2438 2SK2153 2sk2406 2SK1474 2SK1920
    Text: Continued from previous page Absolute maximum ratings Applications M VGSS Id V (A) (W) VDSS Electrical characteristics (Ta • 25 C ) RDSCmO @ ID PD Teh (1C) VGSS (off) (V) ID ■V6S ves (V) & |Yfs| 0 VDS ' ID slif Type Mo. Package type (A) 2SK1474 TP Ultrahigh-speed switching


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    2SK1474 2SK1475 2SK1920 2SK2046 2SK2153 2SK2619V 2SK2626V 2SK2634V 2SK2164 2SK2321 2SK1731 2SK2637 2SK1871 2SK2626 2sk2636 2SK2438 2sk2406 PDF