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    100MHZ

    Abstract: GPN2222A GPN2907A
    Text: ISSUED DATE :2003/12/15 REVISED DATE :2004/11/29B GPN2907A P NP EP ITAXI AL P L ANAR T RANS ISTO R Description The GPN2907A is designed for general purpose amplifier and high speed, medium-power switching applications Features *Low Collect Saturation voltage.


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    2004/11/29B GPN2907A GPN2907A GPN2222A. 100MHZ GPN2222A PDF

    PA0016

    Abstract: STR11006 SO41P PIONEER PA0016 7 segment to bcd converter 74c915 SAJ141 74HC145 tms1122 IC PA0016 KOR 2310 transistor
    Text: Utgåva 2005-03-24 Alla artiklar i katalogen finns normalt i lager men det tillkommer och utgår kontinuerligt. För aktuell information om prisvärt industriöverskott / surplus surfa in på: http://www.labb.se/surplus.htm Tel: 08-641 86 30 Fax: 08-641 87 30


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    14-dagar PA0016 STR11006 SO41P PIONEER PA0016 7 segment to bcd converter 74c915 SAJ141 74HC145 tms1122 IC PA0016 KOR 2310 transistor PDF

    2N2901

    Abstract: npn 2907a EBC 2N2907 PN2907A FN2907 PH2907 2N2222 2N2907A LB-15N PN2907
    Text: CRO 2N 2 9 0 7 2 N 2 9 07A PN 2 9 0 7 PN 2907A CASE TO-18 THE 2N2907, 2N2907A, PN2907, PN2907A ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SPEED SWITCHING APPLICATIONS. THEY ARE COMPLEMENTARY TO THE NPN TYPE 2N2222,


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    2N2907A 2N2907, 2N2907A, PN2907, PN2907A 2N2222, 2N2222A, PN2222, PN2222A 2N2901 npn 2907a EBC 2N2907 FN2907 PH2907 2N2222 2N2907A LB-15N PN2907 PDF

    Untitled

    Abstract: No abstract text available
    Text: TO S H I B A HSE D DISCRETE/OPTO • T Q T 7 E 5 D DDlflODD T « T O S M TOSHIBA TRANSISTOR - YTS3904 SILICON NPN EPITAXIAL TYPE (PCT PROCESS) FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER Unit in mm APPLICATIONS. FEATURES: . Low Leakage Carrent : IcEV“50nA(Max.), IgEV^SOnAiMax.)


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    YTS3904 SC-59 f-10Hz-15 300ne ln1N916 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general-purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink


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    JF6107 2N6107 E69369, 221D-02 O-220 AN1040. PDF

    2N2905A

    Abstract: No abstract text available
    Text: cs-o 2N/PN2904A 2N/PN2905A 2N/PN2904A & 2N/PN2905A are PNP silicon planar epitaxial transistors. "PNP SILICON TRANSISTORS TO-39 It is intended T0-92A Jpj for high speed medium power switching and general purpose amplifier applications. C B E ABSOLUTE MAXIHUM RATINGS


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    2N/PN2904A 2N/PN2905A 2N/PN2904A 2N/PN2905A T0-92A PN2904A PN2905A 600mA 2N2904A 2N2905A 2N2905A PDF

    Untitled

    Abstract: No abstract text available
    Text: KSC326S NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER SOT-23 • Complement to KSA1298 ABSOLUTE MAXIMUM RATINGS T a- 2 5 ,C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation


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    KSC326S KSA1298 OT-23 KSD261 Vce-30V. lc-100m 800mA 500mA, PDF

    hx- je

    Abstract: No abstract text available
    Text: 2N/PN2904A 2N/PN2905A ¡v' 'PNP SILICON TRANSISTORS 2N/PN2904A & 2N/PN2905A are PNP s il icon planar epitaxial transistors. TO-39 T0-92A It is intended for high speed medium power switching and general purpose amplifier applications. ! ABSOLUTE MAXIMUM RATINGS


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    2N/PN2904A 2N/PN2905A 2N/PN2905A T0-92A 2N2904A 2N2905A PN2904A PN2905A 150mA hx- je PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA DISCRETE/OPTO 4SE D • ^0=17250 O a i T ^ S 1 «TOSM TOSHIBA YTQ9QÍ17 SILICON PNP EPITAXIAL TYPE (PCT PROCESS) YTSZ907 FOR HIGH-SPEED SWITCHING USE DC TO VHF AMPLIFIER APPLICATIONS AND


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    YTSZ907 500mA 200MHz -500mA, -50mA YTS2222 Ta-25Â VCE--10V, PDF

    2N2906

    Abstract: 2N2906A PN2221 2N2221 2N2221A 2N290 PN2221A PN2906 PN2906A
    Text: 2N2906 2N2906A PN 2906 ■ PN2906A PNP SILICON GENERAL PURPOSE AMPLIFIERS AND SWITCHES 1 CASE TO-18 THE 2N2906, 2N2906A, PN2906, PN2906A ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SPESI-' SWITCHING APPLICATIONS. THEY ARE


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    2N290Ã 2N2906A PN2906A 2N2906, 2N2906A, PN2906, COMPLEMEN171ARY 2N2221 2N2221A, 2N2906 PN2221 2N2221 2N2221A 2N290 PN2221A PN2906 PDF

    Untitled

    Abstract: No abstract text available
    Text: CRO 2N 2907 2N 2 9 07A PN 2907 PN2907A CASE TO-18 THE 2N2907, 2N2907A, PN2907, PN2907A ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SPEED SWITCHING APPLICATIONS. THEY ARE COMPLEMENTARY TO THE NPN TYPE 2N2222, 2N2222A, PN2222, PN2222A RESPECTIVELY.


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    PN2907A 2N2907, 2N2907A, PN2907, PN2907A 2N2222, 2N2222A, PN2222, PN2222A PDF

    YTS3904

    Abstract: YTS3906
    Text: TOSHIBA TRANSISTOR YTS3904 SILICON NPN EPITAXIAL TYPE PCT PROCESS FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER Unit in mm APPLICATIONS. FEATURES : . Low Leakage Current : !cEV*50nA(Max.), lBEV*50aA(Max.) <3 V c e -30V, V BE-3V . Excellent DC Current Gain Linearity


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    YTS3904 YTS3906 SC-59 Ta-25 VCE-20V, IC-10mA f-100MHz 20per* YTS3904 YTS3906 PDF

    2sc144

    Abstract: 2SC1446
    Text: 2 S C 1 4 4 6 NPN zzXSsXrJ- U—"^SH /Si NPN Triple Diffused Planar B^ifijS^S^ffl^ffl/Line-Operated AF Amplifier *7 ^ ^/Chrominance Output Unit *mm 11.5max. Sfr/Features 4. 8max. 1. 5max. • A8fc lfi“C 1W O iiiiJ ^ i|^ > ix tvi ‘o /lW output in class-A operation


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    2SC1446 Ic-10mA 100mA, 2sc144 2SC1446 PDF