100MHZ
Abstract: GPN2222A GPN2907A
Text: ISSUED DATE :2003/12/15 REVISED DATE :2004/11/29B GPN2907A P NP EP ITAXI AL P L ANAR T RANS ISTO R Description The GPN2907A is designed for general purpose amplifier and high speed, medium-power switching applications Features *Low Collect Saturation voltage.
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Original
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2004/11/29B
GPN2907A
GPN2907A
GPN2222A.
100MHZ
GPN2222A
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PDF
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PA0016
Abstract: STR11006 SO41P PIONEER PA0016 7 segment to bcd converter 74c915 SAJ141 74HC145 tms1122 IC PA0016 KOR 2310 transistor
Text: Utgåva 2005-03-24 Alla artiklar i katalogen finns normalt i lager men det tillkommer och utgår kontinuerligt. För aktuell information om prisvärt industriöverskott / surplus surfa in på: http://www.labb.se/surplus.htm Tel: 08-641 86 30 Fax: 08-641 87 30
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Original
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14-dagar
PA0016
STR11006
SO41P
PIONEER PA0016
7 segment to bcd converter 74c915
SAJ141
74HC145
tms1122
IC PA0016
KOR 2310 transistor
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PDF
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Untitled
Abstract: No abstract text available
Text: 1DI300MN-050 300A =? D .— )V POWER TRANSISTOR MODULE : F e a t u r e s • hpe^SV-' High DC Current Gain • flEftrofBtttt • S t t it t f t f t liE B r f ii • E l i i : A p p lic a t io n s • > J<— 9 General Purpose Inverter • Uninterruptible Power Supply
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OCR Scan
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1DI300MN-050
l95t/R89
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PDF
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2N2901
Abstract: npn 2907a EBC 2N2907 PN2907A FN2907 PH2907 2N2222 2N2907A LB-15N PN2907
Text: CRO 2N 2 9 0 7 2 N 2 9 07A PN 2 9 0 7 PN 2907A CASE TO-18 THE 2N2907, 2N2907A, PN2907, PN2907A ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SPEED SWITCHING APPLICATIONS. THEY ARE COMPLEMENTARY TO THE NPN TYPE 2N2222,
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OCR Scan
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2N2907A
2N2907,
2N2907A,
PN2907,
PN2907A
2N2222,
2N2222A,
PN2222,
PN2222A
2N2901
npn 2907a EBC
2N2907
FN2907
PH2907
2N2222
2N2907A
LB-15N
PN2907
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PDF
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Untitled
Abstract: No abstract text available
Text: TO S H I B A HSE D DISCRETE/OPTO • T Q T 7 E 5 D DDlflODD T « T O S M TOSHIBA TRANSISTOR - YTS3904 SILICON NPN EPITAXIAL TYPE (PCT PROCESS) FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER Unit in mm APPLICATIONS. FEATURES: . Low Leakage Carrent : IcEV“50nA(Max.), IgEV^SOnAiMax.)
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OCR Scan
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YTS3904
SC-59
f-10Hz-15
300ne
ln1N916
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PDF
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general-purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink
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OCR Scan
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JF6107
2N6107
E69369,
221D-02
O-220
AN1040.
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PDF
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a7y transistor
Abstract: transistor 009 transistor a7y 1DI300MN-050 M115 T151 T460 1di300 TJI-25
Text: 1DI300MN-050 300A • Outline Drawings , < r p - y POWER TRANSISTOR MODULE : Features • hFE ^i^v,' High DC C urren t Gain • KF*gJSt •% m < n f f i m t • ffliis ■ A pplications • //U fl'f > '< — 9 General Purpose Inverter • U n in te rru p tib le P ow er S upply
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OCR Scan
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1DI300MN-050
E82988
95t/R89
a7y transistor
transistor 009
transistor a7y
M115
T151
T460
1di300
TJI-25
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PDF
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2N2905A
Abstract: No abstract text available
Text: cs-o 2N/PN2904A 2N/PN2905A 2N/PN2904A & 2N/PN2905A are PNP silicon planar epitaxial transistors. "PNP SILICON TRANSISTORS TO-39 It is intended T0-92A Jpj for high speed medium power switching and general purpose amplifier applications. C B E ABSOLUTE MAXIHUM RATINGS
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OCR Scan
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2N/PN2904A
2N/PN2905A
2N/PN2904A
2N/PN2905A
T0-92A
PN2904A
PN2905A
600mA
2N2904A
2N2905A
2N2905A
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PDF
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Untitled
Abstract: No abstract text available
Text: KSC326S NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER SOT-23 • Complement to KSA1298 ABSOLUTE MAXIMUM RATINGS T a- 2 5 ,C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation
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OCR Scan
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KSC326S
KSA1298
OT-23
KSD261
Vce-30V.
lc-100m
800mA
500mA,
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PDF
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hx- je
Abstract: No abstract text available
Text: 2N/PN2904A 2N/PN2905A ¡v' 'PNP SILICON TRANSISTORS 2N/PN2904A & 2N/PN2905A are PNP s il icon planar epitaxial transistors. TO-39 T0-92A It is intended for high speed medium power switching and general purpose amplifier applications. ! ABSOLUTE MAXIMUM RATINGS
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OCR Scan
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2N/PN2904A
2N/PN2905A
2N/PN2905A
T0-92A
2N2904A
2N2905A
PN2904A
PN2905A
150mA
hx- je
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PDF
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N-1030
Abstract: Zener Diode B
Text: 1DI400MN-050 400A : Outline Drawings POWER TRANSISTOR MODULE : Features • hFE*f# i ' High DC Current Gain : Applications • i/LSK >*< — $ General Purpose Inverter • Uninterruptible Power Supply • N Mountingtorque*?9-4BkQ-0ffl Servo & Spindle Drive for NC Machine Tools
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OCR Scan
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1DI400MN-050
E82988
N-1030
Zener Diode B
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PDF
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L302A
Abstract: No abstract text available
Text: 1 D I 4 M P - 5 4 A , ± , , : Outline Drawings POW ER T R A N S IS T O R M ODULE : Features • hFE*''SiL' High DC Current Gain • FA X • BES&OfBjlH&'it • S fe K tt ftliR n iE : Applications • iHffl'f > ' < — $ General Purpose Inverter • $IEf?Q%iKI£|£
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OCR Scan
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1995-9095t/R89
Sh150
L302A
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PDF
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BFX80
Abstract: TO77
Text: Dey 80 SILICON PLANAR NPN/PNP LO W -LEVEL, LOW-NOISË COM PLEM ENTARY AM PLIFIER The BFX 80 is a six terminal device containing anNPN/PNP com plem entary pair o f isolated silicon planar epitaxial transistors in Jedec T O -7 7 metal case. This device is particularly
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OCR Scan
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VcE30
100MA
BFX80
TO77
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA DISCRETE/OPTO 4SE D • ^0=17250 O a i T ^ S 1 «TOSM TOSHIBA YTQ9QÍ17 SILICON PNP EPITAXIAL TYPE (PCT PROCESS) YTSZ907 FOR HIGH-SPEED SWITCHING USE DC TO VHF AMPLIFIER APPLICATIONS AND
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OCR Scan
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YTSZ907
500mA
200MHz
-500mA,
-50mA
YTS2222
Ta-25Â
VCE--10V,
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PDF
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Untitled
Abstract: No abstract text available
Text: 1DI300MN-050 300A • Outline Drawings , < r p - y POWER TRANSISTOR MODULE : Features • hFE^i^v,' High DC Current Gain • KF*gJSt •% m < n f f i m t • ffliis ■ A pplications • //U fl'f > ' < — 9 • General Purpose Inverter U ninterruptible Power Supply
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OCR Scan
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1DI300MN-050
I95t/R89
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PDF
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Untitled
Abstract: No abstract text available
Text: CRO 2N 2907 2N 2 9 07A PN 2907 PN2907A CASE TO-18 THE 2N2907, 2N2907A, PN2907, PN2907A ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SPEED SWITCHING APPLICATIONS. THEY ARE COMPLEMENTARY TO THE NPN TYPE 2N2222, 2N2222A, PN2222, PN2222A RESPECTIVELY.
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OCR Scan
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PN2907A
2N2907,
2N2907A,
PN2907,
PN2907A
2N2222,
2N2222A,
PN2222,
PN2222A
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PDF
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YTS3904
Abstract: YTS3906
Text: TOSHIBA TRANSISTOR YTS3904 SILICON NPN EPITAXIAL TYPE PCT PROCESS FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER Unit in mm APPLICATIONS. FEATURES : . Low Leakage Current : !cEV*50nA(Max.), lBEV*50aA(Max.) <3 V c e -30V, V BE-3V . Excellent DC Current Gain Linearity
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OCR Scan
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YTS3904
YTS3906
SC-59
Ta-25
VCE-20V,
IC-10mA
f-100MHz
20per*
YTS3904
YTS3906
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PDF
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2sc144
Abstract: 2SC1446
Text: 2 S C 1 4 4 6 NPN zzXSsXrJ- U—"^SH /Si NPN Triple Diffused Planar B^ifijS^S^ffl^ffl/Line-Operated AF Amplifier *7 ^ ^/Chrominance Output Unit *mm 11.5max. Sfr/Features 4. 8max. 1. 5max. • A8fc lfi“C 1W O iiiiJ ^ i|^ > ix tvi ‘o /lW output in class-A operation
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OCR Scan
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2SC1446
Ic-10mA
100mA,
2sc144
2SC1446
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PDF
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