Untitled
Abstract: No abstract text available
Text: 2SC5446 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5446 HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS z High Voltage Unit: mm : VCBO = 1700 V z Low Saturation Voltage : VCE sat = 3 V (Max.)
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2SC5446
2-21F2A
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Untitled
Abstract: No abstract text available
Text: 2SA1384 TOSHIBA Transistor Silicon PNP Triple Diffused Type PCT process 2SA1384 High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications • High voltage: VCBO = −300 V, VCEO = −300 V
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2SA1384
2SC3515
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marking C15
Abstract: smd MARKING c17 2sa1612 MARKING SMD PNP TRANSISTOR V5090 smd transistor marking c17
Text: Transistors SMD Type PNP Silicon Epitaxial Transistor 2SA1612 Features High DC current gain 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector to base voltage Parameter VCBO -120 V Collector to emitter voltage VCEO -120
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2SA1612
-120V,
-10mA
marking C15
smd MARKING c17
2sa1612
MARKING SMD PNP TRANSISTOR
V5090
smd transistor marking c17
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MARKING SMD PNP TRANSISTOR F8
Abstract: transistor f8 MARKING SMD PNP TRANSISTOR BF824W marking f8
Text: Transistors IC SMD Type PNP Medium Frequency Transistor BF824W Features Low current max. 25 mA . Low voltage (max. 30 V). 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -30 V Collector-emitter voltage
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BF824W
MARKING SMD PNP TRANSISTOR F8
transistor f8
MARKING SMD PNP TRANSISTOR
BF824W
marking f8
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2sd2581
Abstract: 2SD2581 equivalent NPN Transistor 8A NPN Transistor 1500V Horizontal Deflection Switching Transistors horizontal transistor
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD2581 DESCRIPTION •High Breakdown Voltage: VCBO= 1500V Min ·High Switching Speed ·High Reliability APPLICATIONS ·Color TV horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
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2SD2581
2sd2581
2SD2581 equivalent
NPN Transistor 8A
NPN Transistor 1500V
Horizontal Deflection Switching Transistors
horizontal transistor
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BCX53
Abstract: marking AE BCX52 BCX51 smd marking AA SMD iC MARKING AG SMD iC MARKING AE BCX53 SMD SMD AK BCX52-16
Text: Transistors SMD Type PNP Medium Power Transistors BCX51,BCX52,BCX53 Features High current max. 1 A . Low voltage (max. 80 V). Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Symbol Rating Unit VCBO -45 V BCX52 -60
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BCX51
BCX52
BCX53
BCX52
BCX51
BCX51-16
BCX53
marking AE
smd marking AA
SMD iC MARKING AG
SMD iC MARKING AE
BCX53 SMD
SMD AK
BCX52-16
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2SC1617
Abstract: npn transistors 300V 0,5a 250V 100MA NPN
Text: Inchange Semiconductor Product Specification 2SC1617 Silicon NPN Power Transistors • DESCRIPTION ·With TO-3 package ·High voltage: VCBO min :300V ·Wide safe oprating area APPLICATIONS ·For B/W white TV horizontal output applications PINNING(see fig.2)
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2SC1617
100mA;
2SC1617
npn transistors 300V 0,5a
250V 100MA NPN
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2SB1119
Abstract: No abstract text available
Text: Transistors SMD Type PNP Epitaxial Planar Silicon Transistors 2SB1119 Features Very small size making it easy to provide highdensity, small-sized hybrid IC’ s. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -25
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2SB1119
-500mA
-50mA
2SB1119
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SMD TRANSISTOR MARKING Dd
Abstract: SMD TRANSISTOR MARKING DE MARKING SMD NPN TRANSISTOR BR SMD TRANSISTOR MARKING BR 2SD1419
Text: Transistors SMD Type NPN Silicon epitaxial Transistor 2SD1419 Features Low frequency power amplifier Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 100 V Emitter to base voltage
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2SD1419
SMD TRANSISTOR MARKING Dd
SMD TRANSISTOR MARKING DE
MARKING SMD NPN TRANSISTOR BR
SMD TRANSISTOR MARKING BR
2SD1419
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BD transistor
Abstract: smd marking BD 2SB1189 BD marking
Text: Transistors SMD Type Medium Power Transistor 2SB1189 Features High breakdown voltage, BVCEO=-80V, and high current, IC=-0.7A. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base Voltage VCBO -80 V Collector-emitter Voltage VCEO -80
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2SB1189
-500mA
-50mA
100MHz
BD transistor
smd marking BD
2SB1189
BD marking
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2SD917
Abstract: No abstract text available
Text: Inchange Semiconductor Product Specification 2SD917 Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·High speed switching ·High VCBO ·Large collector power dissipation APPLICATIONS ·For horizontal deflection output applications PINNING
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2SD917
2SD917
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SMD TRANSISTOR MARKING BR
Abstract: 2SC5209 marking RH
Text: Transistors SMD Type Small Signal Transistor 2SC5209 Features High voltage VCEO=50V. Small package for mounting. High hFE = 600 to 1800. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 50 V Emitter-base voltage VEBO
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2SC5209
100mA
500mA
-10mA
SMD TRANSISTOR MARKING BR
2SC5209
marking RH
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2SD1418
Abstract: MA1060
Text: Transistors SMD Type Silicon NPN Epitaxial 2SD1418 Features Low frequency power amplifier. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 80 V Emitter to base voltage VEBO
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2SD1418
2SD1418
MA1060
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BF822W
Abstract: No abstract text available
Text: Transistors SMD Type NPN High-Voltage Transistor BF822W Features Low current max. 50 mA High voltage (max. 250 V). 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage (open emitter) VCBO 250 V
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BF822W
100MHz
BF822W
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2N5401G
Abstract: No abstract text available
Text: 2N5401 Amplifier Transistors PNP Silicon Features • These are Pb−Free Devices* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage VCEO 150 Vdc Collector − Base Voltage VCBO 160 Vdc Emitter − Base Voltage
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2N5401
2N5401/D
2N5401G
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bc640-016g
Abstract: 016G
Text: BC640-016G High Current Transistors PNP Silicon Features • This is a Pb−Free Device http://onsemi.com COLLECTOR 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO −80 Vdc Collector-Base Voltage VCBO −80 Vdc Emitter-Base Voltage
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BC640-016G
BC640/D
016G
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2sc3892a
Abstract: 2Sc3892a equivalent 2SC3892 c 1173
Text: 2SC3892A SILICON NPN TRIPLE DIFFUSED MESA TYPE HORIZONTAL DEFLECTION OUTPUT APPLICATIONS. Unit in mm . High Voltage : VcBO ^1500V I 5 . 5 i 0.5 . 0 3 .6± 0.3 3.0 ± 0 .3 . High Speed Switching Resistive Load tf=0.2ys(Typ.) . Collector Metal is Fully Covered with Mold Resin.
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2SC3892A
1173-Y
2sc3892a
2Sc3892a equivalent
2SC3892
c 1173
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2SC994
Abstract: No abstract text available
Text: SILICON NPN EPITAXIAL PLANAR TYPE 2SC994 Unit in mm VHF BANO POWER AMPLIFIER APPLICATIONS. 09.Z9UAX. FEATURES : Output Power '• Po=0.95W Min. ( f=l75MHz, VCC=13.5V, Pi=40mW ) Í¿Q.45 05 .C 8 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING vCBO
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2SC994
l75MHz,
100mA
175MHz,
-30pF
175MHZ
2SC994
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2N5551
Abstract: No abstract text available
Text: TOSHIBA TRANSISTOR 2N5551 SILICON NPN EPITAXIAL TYPE PCT PROCESS FOR GENERAL PURPOSE USE HIGH VOLTAGE AMPLIFIER APPLICATIONS. . High Collector Breakdown Voltage : VCBO=180V, VcEO=160V . Low Leakage Current : IcBO= 50nA(Max.) @ VcB=120V . Low Saturation Voltage
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2N5551
100MHz
2N5551
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2SC4830
Abstract: No abstract text available
Text: SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC4830 HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY. Unit in mm HIGH SPEED SWITCHING POWER SUPPLY OUTPUT APPLICATIONS. 3.0±0.3 15-5i 0.5 0 3.6±0.3 . High Speed : tf=0.15*is Typ. . High Voltage : VcBO=15C)OV
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2SC4830
15-5i
2SC4830
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2SD1554
Abstract: 2sd1554 equivalent TOSHIBA DIODE GLASS MOLD 00l3
Text: SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD1554 COLOR TV HORIZONTAL OUTPUT APPLICATIONS. Unit in mm FEATURES: . High Voltage l&5±0t5 >3.6±aS : VCBO=1500V S.0±0l3 . Low Saturation Voltage: VcE sat =5V(Typ.)(Ic=3A,Ib =0.8A) . High Speed : tf = 1. 0|is(Max.) (I(;p=3A, lBl(end)=0.8A)
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2SD1554
200mA,
2SD1554
2sd1554 equivalent
TOSHIBA DIODE GLASS MOLD
00l3
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C475
Abstract: 2SC4757 C4757
Text: 2SC4757 SILICON NPN TRIPLE DIFFUSED MESA TYPE HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY. HIGH SPEED SWITCHING POWER SUPPLY OUTPUT APPLICATIONS. Unit in mm 1 5 .5 ± 0.5 . High Speed :tf=0.15Ms Typ. . High Voltage :VcBO= 1500V . Low SaturationVoltage
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2SC4757
C475
2SC4757
C4757
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2-16C1A
Abstract: No abstract text available
Text: SILICON PNP EPITAXIAL TYPE DARLINGTON POWER 5 5 8 U nit in mm POWER AMPLIFIER APPLICATIONS 15 9 V i A X • • )S3.2 ♦ 0.2 High Breakdown Voltage : V cE O = —140V (Min.) Complementary to 2SD2387 M A X IM U M RATINGS (Ta = 25°C) SYMBOL VCBO VCEO v EBO
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--140V
2SD2387
100fl
-140V
--50mA,
--12A
2-16C1A
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Untitled
Abstract: No abstract text available
Text: SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SA1899 POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AM PLIFIER APPLICATIONS. • Complementary to 2SC5052. M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT VCBO -1 2 0 V Collector-Emitter Voltage VCEO
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2SA1899
2SC5052.
----120V,
--10mA,
--100mA
--500mA,
--50mA
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