1N5148A
Abstract: No abstract text available
Text: 1N5148A TUNING VARACTOR DIODE PACKAGE STYLE D0-204AA DESCRIPTION: The 1N5148A is a Silicon Abrupt Junction Microwave Tuning Varactor Diode. Dim: A B D F K MAXIMUM RATINGS IF 250 mA VR 60 V PDISS 400 mW @ TA = 25 C TJ -65 C to +175 C TSTG -65 C to +200 C Millimeters
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1N5148A
D0-204AA
1N5148A
CT4/CT60
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varactor 1N5148
Abstract: 1N5148 D0-204AA D0204
Text: 1N5148 TUNING VARACTOR DIODE PACKAGE STYLE D0-204AA DESCRIPTION: The ASI 1N5148 is a Silicon Abrupt Junction Microwave Tuning Varactor Diode. Dim: A B D F K MAXIMUM RATINGS IF 250 mA VR 60 V PDISS 400 mW @ TA = 25 °C TJ -65 °C to +175 °C TSTG -65 °C to +200 °C
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1N5148
D0-204AA
1N5148
CT4/CT60
varactor 1N5148
D0-204AA
D0204
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varactor 1N5144
Abstract: 1N5146 1N5139 1N5139A 1N5140 1N5140A 1N5141 1N5141A 1N5142 1N5142A
Text: GENERAL PURPOSE ABRUPT VARACTOR DIODES 1N5139 - 1N5148 1N5139A - 1N5148A PART NUMBER 1N5139 ♦ 1N5139A 1N5140 ♦ 1N5140A 1N5141 ♦ 1N5141A 1N5142 ♦ 1N5142A 1N5143 ♦ 1N5143A 1N5144 ♦ 1N5144A 1N5145 ♦ 1N5145A 1N5146 ♦ 1N5146A 1N5147 ♦ 1N5147A
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1N5139
1N5148
1N5139A
1N5148A
1N5139
1N5139A
1N5140
1N5140A
1N5141
1N5141A
varactor 1N5144
1N5146
1N5140
1N5140A
1N5141
1N5141A
1N5142
1N5142A
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varactor 1N5144
Abstract: 1N5141 1N5148A 1N5139 1N5139A 1N5140 1N5140A 1N5141A 1N5142 1N5142A
Text: KNOX SEMICONDUCTOR, INC. GENERAL PURPOSE ABRUPT VARACTOR DIODES 1N5139 - 1N5148 1N5139A - 1N5148A TYPE NUMBER ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ 1N5139 1N5139A 1N5140 1N5140A 1N5141 1N5141A 1N5142 1N5142A 1N5143 1N5143A 1N5144 1N5144A 1N5145 1N5145A 1N5146
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1N5139
1N5148
1N5139A
1N5148A
1N5139
1N5139A
1N5140
1N5140A
1N5141
1N5141A
varactor 1N5144
1N5141
1N5148A
1N5140
1N5140A
1N5141A
1N5142
1N5142A
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Untitled
Abstract: No abstract text available
Text: 1N5148-18 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.48p C1/C2 Min. Capacitance Ratio3.2 V(RRM)(V) Rep.Pk.Rev. Voltage60 Q Factor Min.200 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W)250m Semiconductor MaterialSilicon Package StyleDO-7
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1N5148-18
Voltage60
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Untitled
Abstract: No abstract text available
Text: 1N5148-12 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.48p C1/C2 Min. Capacitance Ratio3.2 V(RRM)(V) Rep.Pk.Rev. Voltage60 Q Factor Min.200 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W)250m Semiconductor MaterialSilicon Package StyleDO-7
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1N5148-12
Voltage60
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30223 varactor sod323
Abstract: Zener c10v KSV1402-1412 SMV30224 30223 sod 323 1N5455 sod-523 varactor diodes MV1662 varactor diode 1N5469 varactor 1N5144
Text: VARACTORS SMV1401, 1402, 1403, 1404, 1405, 1406, 1407, 1408, 1409, 1410, 1411, SMV1412 TMV1401, 1402, 1403, 1404, 1405, 1406, 1407, 1408, 1409, 1410, 1411, TMV1412 SMV20411, 20412, 20413, 20414, SMV20415 SMV20422, 20423, 20424, SMV20425 SMV20432, 20433, 20434, 20435, 20436, SMV20437
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SMV1401,
SMV1412
TMV1401,
TMV1412
SMV20411,
SMV20415
SMV20422,
SMV20425
SMV20432,
SMV20437
30223 varactor sod323
Zener c10v
KSV1402-1412
SMV30224
30223 sod 323
1N5455
sod-523 varactor diodes
MV1662
varactor diode 1N5469
varactor 1N5144
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MSPD2018
Abstract: MZBD-9161 ZENER 15B1 msd700 package inductance MSPD2018-H50 B20 zener diode glass MPN7320 MZBD9161 MLP7121 15B1 zener diode
Text: Aeroflex / Metelics, Inc. Microwave Diodes & Passive Semiconductor Devices Microwave Diodes & Passive Semiconductor Devices Aeroflex / Metelics, Inc. Aeroflex / Metelics, Inc. East Coast Operations 54 Grenier Field Road, Londonderry, NH 03053 Tel: 603 641-3800
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foc17091
MSPD2018
MZBD-9161
ZENER 15B1
msd700 package inductance
MSPD2018-H50
B20 zener diode glass
MPN7320
MZBD9161
MLP7121
15B1 zener diode
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Untitled
Abstract: No abstract text available
Text: 1N5148A asi TUNING VARACTOR DIODE DESCRIPTION: The 1N5148A is a Silicon Abrupt Junction Microwave Tuning Varactor Diode. PACKAGE STYLE D0-204AA Millimeters MAXIMUM RATINGS 250 mA If Vr 60 V P diss 400 mW @ TA = 25 °C Tj -65 °C t o +175 °C T stg -65 °C to +200 °C
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1N5148A
1N5148A
D0-204AA
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O41 DIODE
Abstract: No abstract text available
Text: 1N5148A asii TUNING VARACTOR DIODE DESCRIPTION: The 1N5148A is a Silicon Abrupt Junction Microwave Tuning Varactor Diode. PACKAGE STYLE D0-204AA Millimeters MAXIMUM RATINGS 250 mA If Vr 60 V Pd i s s 400 mW @ Ta $ 25 0C Tj -65 0C to +175 °C Ts t g -65 0C to +200 0C
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1N5148A
1N5148A
D0-204AA
O41 DIODE
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1N4811
Abstract: 1N4791
Text: 1N4786 - Varactor Diodes 1N4786 to 1N4815 Type Number 1N4786 1N4787 1N4788 1N4789 1N4790 1N4791 1N4792 1N4793 1N4794 1N4795 1N4796 1N4797 1N4798 1N4799 1N4800 1N4801 1N4802 1N4803 1N4804 1N4805 1N4806 1N4807 1N4808 1N4809 1N4810 1N4811 1N4812 1N4813 1N4814
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1N4786
1N4815
N5139--
1N5148A
50MHz
1N4811
1N4791
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Untitled
Abstract: No abstract text available
Text: K n o x S e m ic o n d u c t o r , I n c . GENERAL PURPOSE ABRUPT VARACTOR DIODES 1N5139 - 1N5148 1N5139A - 1N5148A TYPE NUM BER 1N5139 » 1N5139A 1N5140 » 1N5140A 1N5141 » 1N5141A 1N5142 » 1N5142A 1N5143 » 1N5143A 1N5144 » 1N5144A 1N5145 » 1N5145A 1N5146
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1N5139
1N5148
1N5139A
1N5148A
1N5139
1N5139A
1N5140
1N5140A
1N5141
1N5141A
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Untitled
Abstract: No abstract text available
Text: K n o x S e m ic o n d u c t o r , I n c . GENERAL PURPOSE ABRUPT VARACTOR DIODES 1N5139 - 1N5148 1N5139A - 1N5148A CAPACITANCE @ - 4 Vdc TYPE NUMBER ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ • INS 139 1N5139A 1N5140 1N5140A 1N5141 1N5141A 1N5142 1N5142A 1N5143
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1N5139
1N5148
1N5139A
1N5148A
1N5140
1N5140A
1N5141
1N5141A
1N5142
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Untitled
Abstract: No abstract text available
Text: K n o x S e m ic o n d u c t o r , I n c GENERAL PURPOSE ABRUPT VARACTOR DIODES 1N5139 - 1N5148 1N5139A - 1N5148A TYPE NUMBER CAPACITANCE @ - 4 Vdc CAPACITANCE RATIO C '4V / C-60V MIN QUALITY FACTOR Q @ - 4 Vdc f = 50 MHz MIN NOM 1N5139 1N5139A 6.12 6.46 6.8
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1N5139
1N5148
1N5139A
1N5148A
1N5140
1N5140A
1N5141
1N5141A
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Untitled
Abstract: No abstract text available
Text: K n o x S e m ic o n d u c t o r , I n c GENERAL PURPOSE ABRUPT VARACTOR DIODES 1N 5139- 1N5148 1N5139A - 1N5148A CA PA C ITA N C E @ - 4 Vdc TYPE NU M BER MIN NOM CA PACITANCE RATIO C-4V / C*60V MAX MIN QUALITY FACTOR Q @ - 4 Vdc f = 50 MHz » 1N5139 1N5139A
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1N5148
1N5139A
1N5148A
1N5139
1N5140
1N5141
1N5141A
1N5142
1N5142A
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1N4786
Abstract: 1N4787 1N4788 1N4789 1N4790 1N4791 1N4792 1N4793 1N4794 1N4815
Text: 5238534 K N O X S E M I C O N D U C T O R INC •JU Varactor Diodes TT 99D 00136 D Tj ' — 6 DE 1 5230534 DDDD13b fl | 1N4786 to 1N4815 Type Number 1N4786 1N4787 1N4788 1N4789 1N4790 1N4791 1N4792 1N4793 1N4794 1N4795 1N4796 1N4797 1N4798 1N4799 1N4800 1N4801
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s23fiS34
0QQ013b
1N4786
1N4815
1N4787
1N4788
1N4789
1N4790
1N4791
1N4792
1N4793
1N4794
1N4815
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transistor c2060
Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Text: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,
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AN-134
transistor c2060
Transistor Shortform Datasheet & Cross References
1N4465
C1906 transistor
Germanium itt
3N58
IN939
MC1230F
2N3866 MOTOROLA
C943 transistor
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JE1100
Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
Text: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices
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MC2259
Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the
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in5388
Abstract: 2N5161 germanium 4m28 Germanium drift transistor 2N5070 1NS248 2N5271 inverter welder 4 schematic
Text: THE SEMICONDUCTOR DATA LIBRARY r*^r* fe SER IES A V O LU M E II i«»* »^ 'i1? prepared by Technicallnformation Center The inform ation in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this inform ation does not convey to the purchaser of semiconductor
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plu300
in5388
2N5161
germanium
4m28
Germanium drift transistor
2N5070
1NS248
2N5271
inverter welder 4 schematic
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SEM 5027A
Abstract: transistor BD 540 LYS MC710G 131-80 wj 89 MC707G 2n328 LN4005 diode reverse current and voltage mc708g C844P TS36A
Text: SELECTION GUIDES How To Use The Data Book Numerical Index Alphabetical Index Device Outlines GENERAL INFORMATION SILICON ZENER DIODES Regulator Diodes, Reference Diodes, Precision Reference Diodes and Reference Amplifiers SILICON RECTIFIERS SILICON RECTIFIER ASSEMBLIES
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1N5160
Abstract: MAX 6438 GEO SEMICONDUCTORS 2N6058 transistor bf 175 2N3902 2N5696 1N5788 Germanium itt
Text: DEVICE INDEX Devices characterized in Volume II show the page reference only. Devices characterized in Volume I are referenced by volume and page number. DEVICE 1N5000 1N5001 1N5002 1N5003 1 N 5 1 3 9 .A 1 N 5 1 4 0 .A 1 N 5 1 4 1 .A 1 N 5 1 4 2 .A 1 N 5 1 4 3 .A
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1N5000
1N5001
1N5002
1N5003
1N5149
1N5150
1N5153
1N5155
1N5158
1N5159
1N5160
MAX 6438 GEO SEMICONDUCTORS
2N6058
transistor bf 175
2N3902
2N5696
1N5788
Germanium itt
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MHW721A2
Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA
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1PHX11136Q-14
MHW721A2
13001 S 6D TRANSISTOR
atv5030* motorola
2N5591 MOTOROLA
13001 6D TRANSISTOR
BGY41
MHW710-1
construction linear amplifier 2sc1945
7119 amperex
bf503
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RCA SK CROSS-REFERENCE
Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered
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