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    UV100 Search Results

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    UV100 Price and Stock

    Opto Diode Corp AXUV100G

    SENSOR PHOTODIODE 254NM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey AXUV100G Box 56 1
    • 1 $729.48
    • 10 $725.162
    • 100 $725.162
    • 1000 $725.162
    • 10000 $725.162
    Buy Now

    OSI Optoelectronics UV-100EQC

    SENSOR PHOTODIODE 720NM 2DIP MOD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey UV-100EQC Bulk 40 1
    • 1 $203.99
    • 10 $203.99
    • 100 $138.1715
    • 1000 $138.1715
    • 10000 $138.1715
    Buy Now

    OSI Optoelectronics UV-100DQC

    SENSOR PHOTODIODE 980NM 2DIP MOD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey UV-100DQC Bulk 38 1
    • 1 $196.19
    • 10 $196.19
    • 100 $132.8865
    • 1000 $132.8865
    • 10000 $132.8865
    Buy Now

    OSI Optoelectronics UV-100EQ

    SENSOR PHOTODIODE 720NM MOD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey UV-100EQ Bulk 20 1
    • 1 $241.72
    • 10 $203.92
    • 100 $165.775
    • 1000 $165.775
    • 10000 $165.775
    Buy Now

    OSI Optoelectronics UV-100DQ

    SENSOR PHOTODIODE 980NM MOD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey UV-100DQ Bulk 19 1
    • 1 $222.6
    • 10 $187.784
    • 100 $151.0625
    • 1000 $151.0625
    • 10000 $151.0625
    Buy Now

    UV100 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    UV-100 UDT Sensors INVERSION LAYER AND PLANAR DIFFUSED SILICON PHOTODIODE Original PDF
    UV-100BG EG&G Ultraviolet-Optimized Photodiode Scan PDF
    UV-100BG EG&G Ultraviolet-Optimized Photodiode Scan PDF
    UV-100BQ PerkinElmer Optoelectronics si Pins uv Enhanced Low Noise 220 NM to 1100 NM Original PDF
    UV-100BQ EG&G Ultraviolet-Optimized Photodiode Scan PDF
    UV-100BQ EG&G Ultraviolet-Optimized Photodiode Scan PDF
    UV-100DC UDT Sensors Photodiode: Diffused Module: 0.5A/W Sensitivity: 1nSec Original PDF
    UV-100EC UDT Sensors Photodiode: Diffused Module: 0.33A/W Sensitivity: 1nSec Original PDF
    UV-100L UDT Sensors INVERSION LAYER AND PLANAR DIFFUSED SILICON PHOTODIODE Original PDF

    UV100 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    24v ballast

    Abstract: balastro transformador de 24v MS27053 transformador ballast schema transformador electrico 24v interno experiment M27080
    Text: UV100RM TrueUV Coil Treatment System PRODUCT DATA FEATURES • Remote mount bulb and ballast allow for flexible installation in any application. • 24V ballast does not require electrician to install additional outlets. • SnapLamp™ replacement bulb allows for easy


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    PDF UV100RM 68-0297EFS--01 UV100RM 68-0297EFS--01 24v ballast balastro transformador de 24v MS27053 transformador ballast schema transformador electrico 24v interno experiment M27080

    JDSU Modulator

    Abstract: JDS uniphase intensity modulator AM MODULATOR corning modulator Fujikura direct pm modulation circuit intensity modulator optical modulator uv 709 jdsu modulator bias
    Text: COMMUNICATIONS COMPONENTS APE Microwave Analog Intensity Modulator Key Features • Low drive voltage • Direct current DC to 20 GHz operation • Low optical insertion loss • High optical power operation • 1300 nm and 1550 nm models Applications


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    PDF 498-JDSU 5378-JDSU JDSU Modulator JDS uniphase intensity modulator AM MODULATOR corning modulator Fujikura direct pm modulation circuit intensity modulator optical modulator uv 709 jdsu modulator bias

    C1383 NPN transistor collector base and emitter

    Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
    Text: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,


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    PDF 10-foot C1383 NPN transistor collector base and emitter NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383

    udt UV100

    Abstract: PIN-10D PIN-10AP PIN-6DPI UDT Sensors PSD FIL-3C PIN-040A PIN-HS040 XUV-100C PIN-5DI
    Text: INTRODUCTION PACKAGE MECHANICAL SPECIFICATIONS AND PARAMETERS 1. Parameter Definitions: A = Distance from top of chip to top of glass. a = Photodiode Anode. B = Distance from top of glass to bottom of case. c = Photodiode Cathode Note: cathode is common to case in metal package products unless otherwise noted .


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    PDF UV-35P XUV-50C XUV-100C RD-100 RD-100A UV-035DC UV-100DC UV-035EC UV-100EC UV-005DC udt UV100 PIN-10D PIN-10AP PIN-6DPI UDT Sensors PSD FIL-3C PIN-040A PIN-HS040 XUV-100C PIN-5DI

    FND-100Q

    Abstract: FND-100 C30724E YAG-444-4A InGaAs APD quadrant PerkinElmer fnd-100q Si apd photodiode nir emitter leds with 700 to 900 nm SPCM-AQR C30950E
    Text: High-performance emitters & detectors for the most demanding applications PerkinElmer Optoelectronics PerkinElmer Optoelectronics provides Sensor, Lighting and Digital Imaging technologies to speed the development of breakthrough applications for customers in industrial, safety & security, consumer and biomedical markets.


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    PDF CAT0506P FND-100Q FND-100 C30724E YAG-444-4A InGaAs APD quadrant PerkinElmer fnd-100q Si apd photodiode nir emitter leds with 700 to 900 nm SPCM-AQR C30950E

    udt UV100

    Abstract: UV-20 UDT UV-35P UV-100L FIL-UV50 udt PIN UV 100 near IR photodiodes UV-005DC UV-035DC uv sensors
    Text: UV ENHANCED SERIES INVERSION LAYERS AND PLANAR DIFFUSED SILICON PHOTODIODES APPLICATIONS FEATURES • Pollution Monitoring • Medical Instrumentation • UV Exposure Meters • Spectroscopy • Water Purification • Fluorescence UDT Sensors offers two distinct families of UV enhanced silicon photodiodes.


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    PDF 24/Ceramic udt UV100 UV-20 UDT UV-35P UV-100L FIL-UV50 udt PIN UV 100 near IR photodiodes UV-005DC UV-035DC uv sensors

    C 4977

    Abstract: T400 clock C520 A/D ON 4977 T405 TP521 937 ke c528 transistor digital led clock circuit diagram diode C531
    Text: APPLICATION NOTE Improved Picture Quality Module MK9 AN97071 Philips Semiconductors Improved Picture Quality Module MK9 Application Note AN97071 Abstract The Improved Picture Quality IPQ module MK9 is an application PC-board designed to evaluate the SAA 4977


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    PDF AN97071 80C51 TP502 TP501 TP500 TP513 TP514 C 4977 T400 clock C520 A/D ON 4977 T405 TP521 937 ke c528 transistor digital led clock circuit diagram diode C531

    UV-005EQ

    Abstract: UV-035EQ spectrophotometer E152801 E14800 UV-001D UV-013EQ 320nm 100-EC UV-100EC
    Text: UV-EQ / EQC / EK SERIES new UV Enhanced, Suppressed NIR Photodiode OSI optoelectronics introduces new family of Planar Diffused UV Enhanced Photodiode: the UV–EQ and UV–EQC Series. The new Silicon is processed for enhanced responsivity over 200-400nm and sensitivity down to 190 nm.


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    PDF 200-400nm 320nm. UV-035DC UV-100DC UV-035DQC UV-100DQC XUV-50C XUV-100C XUV-005 XUV-020 UV-005EQ UV-035EQ spectrophotometer E152801 E14800 UV-001D UV-013EQ 320nm 100-EC UV-100EC

    PIN-10D

    Abstract: PIN-5DI PIN-13DI PIN-10DF PIN-10DI PIN10DI OSD100-0A InGaAs APD quadrant OSD5-5T PIN-44DI
    Text: Photoconductive Series Planar Diffused Silicon Photodiodes The Photoconductive Detector Series are suitable for high speed and high sensitivity applications. The spectral range extends from 350 to 1100 nm, making these photodiodes ideal for visible and near IR applications,


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    PDF OS-P200 OSD100-0A OSD100-5TA PIN-10D PIN-5DI PIN-13DI PIN-10DF PIN-10DI PIN10DI OSD100-0A InGaAs APD quadrant OSD5-5T PIN-44DI

    PIN-125DPL

    Abstract: PIN-10DP InGaAs APD quadrant OSD1-5T pin-6dp PIN-10AP PIN-10DPI PIN-13DPI PIN-220DP PIN-25D
    Text: Photovoltaic Series Planar Diffused Silicon Photodiodes The Photovoltaic Detector series is utilized for applications requiring high sensitivity and moderate response speeds, with an additional sensitivity in the visible-blue region for the blue enhanced series. The spectral


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    PDF OS-P200 OSD100-0A OSD100-5TA PIN-125DPL PIN-10DP InGaAs APD quadrant OSD1-5T pin-6dp PIN-10AP PIN-10DPI PIN-13DPI PIN-220DP PIN-25D

    FIL-UV50

    Abstract: FIL-UV100 PIN-10D XUV-005 UV-100 UV-100L PIN-5D PIN-5DPI UV-035DQC PIN-10AP
    Text: UV Enhanced Series Inversion Layers and Planar Diffused Silicon Photodiodes OSI Optoelectronics offers two distinct families of UV enhanced silicon photodiodes. Inversion channel series and planar diffused series. Both families of devices are especially designed for low noise detection in the


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    PDF diffuFIL-UV100 FIL-UV005 FIL-UV20 FIL-UV50 FIL-UV100 FIL-UV50 FIL-UV100 PIN-10D XUV-005 UV-100 UV-100L PIN-5D PIN-5DPI UV-035DQC PIN-10AP

    fCL16

    Abstract: PLCC44 SAA4955TJ SAA4995WP UV764 UI02
    Text: INTEGRATED CIRCUITS DATA SHEET SAA4995WP PANorama-IC PAN-IC Preliminary specification File under Integrated Circuits, IC02 1997 Jun 10 Philips Semiconductors Preliminary specification PANorama-IC (PAN-IC) SAA4995WP FEATURES GENERAL DESCRIPTION • Horizontal sample rate conversion in both zoom and


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    PDF SAA4995WP SCA54 547047/20/01/pp16 fCL16 PLCC44 SAA4955TJ SAA4995WP UV764 UI02

    udt UV100

    Abstract: UV-35 UV-20 UDT UDT BNC UV UDT UV-005 UV-005 UV-015 UV-100 UV-100L UV-50
    Text: UV Enhanced Series Inversion Layers and Planar Diffused Silicon Photodiodes UDT Sensors offers two distinct families of UV enhanced silicon photodiodes. Inversion channel series and planar diffused series. Both families of devices are especially designed for low noise detection in the


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    photodiode pin alpha particles

    Abstract: UV-35P XUV-100C UV35P OSD35-LR UV photodiodes 254 OSD35-LR-A PIN-RD100A OSD35-LR-D scintillator amplifier
    Text: High Breakdown Voltage, Fully Depleted Series Large Active Area Photodiodes The Large Active Area High Speed Detectors can be fully depleted to achieve the lowest possible junction capacitance for fast response times. They may be operated at a higher reverse voltage, up to the


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    PDF OSD35-LR-A OSD35-LR-D PIN-RD07 PIN-RD15 UV-35P UV-005DC UV-035DC UV-100DC UV-005EC UV-035EC photodiode pin alpha particles UV-35P XUV-100C UV35P OSD35-LR UV photodiodes 254 OSD35-LR-A PIN-RD100A OSD35-LR-D scintillator amplifier

    stocko mkf

    Abstract: SAA4991 47 micro farad 16v electrolytic radial capacitor 78L05ACP philips Electrolytic Capacitor 100 micro farad 25v electrolytic capacitor 74HCT4066T DIODE p13 picture 74f08d philips tda9151
    Text: APPLICATION NOTE Improved Picture Quality Module MK7-V1 V0.9 AN97058 Philips Semiconductors Improved Picture Quality Module MK7-V1 V0.9 Application Note AN97058 Abstract This documents describes the hardware content, the signal processing and the software control of the 100 Hz


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    PDF AN97058 stocko mkf SAA4991 47 micro farad 16v electrolytic radial capacitor 78L05ACP philips Electrolytic Capacitor 100 micro farad 25v electrolytic capacitor 74HCT4066T DIODE p13 picture 74f08d philips tda9151

    c531 diode

    Abstract: SAA4991 C 4977 ON 4977 TP521 80C51 SAA4955 SAA4974 UM9701 UV100
    Text: APPLICATION NOTE Improved Picture Quality Module MK9 AN98041 Philips Semiconductors Improved Picture Quality Module MK9 Application Note AN98041 Abstract The Improved Picture Quality IPQ module MK9 is an application PC-board designed to evaluate the SAA 4977


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    PDF AN98041 80C51 TP502 TP501 TP500 TP513 TP514 c531 diode SAA4991 C 4977 ON 4977 TP521 80C51 SAA4955 SAA4974 UM9701 UV100

    C30817

    Abstract: No abstract text available
    Text: Modules and optical Receivers PIN AND APD Si PIN and APD Modules, InGaAs APD Modules Receiver Modules For Analytical AND Industrial Applications Si PIN and APD Modules – InGaAs APD Modules Applications • Laser range finder Product Description These modules comprise of a photodetector PIN or APD and a transimpedance amplifier in the


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    PDF C30659 C30659-1550-R2AH C30645 C30919E C30817 C30950EH LLAM-1550-R2AH C30662 LLAM-1060-R8BH C30817

    laser range finder schematics

    Abstract: BPW34 application note "laser range finder" 254 nm uv LED SPOT-9DMI APPLICATION NOTE BpW34 far uv photodiode UDT sensors BPX65 PIN-10AP
    Text: TABLE OF CONTENTS Revision 98.3 Index and Selection Guide Photodiode Characteristics and Applications Application Notes and Further Reading Sources Standard Photodiodes, Electro-Optical Specifications and Design Notes Planar Diffused Photodiodes Photoconductive Series


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    PIN-10AP

    Abstract: PIN-10D osd15-5t OSD5-5T PIN-040A BPX65R PIN-10DI UV-100 PIN-10DP UV-020
    Text: UV Enhanced Series Inversion Layers and Planar Diffused Silicon Photodiodes OSI Optoelectronics offers two distinct families of UV enhanced silicon photodiodes. Inversion channel series and planar diffused series. Both families of devices are especially designed for low noise detection in the


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    PDF OSD35-LR-A OSD35-LR-D PIN-RD07 PIN-RD15 UV-35P UV-005DC UV-035DC UV-100DC UV-005EC UV-035EC PIN-10AP PIN-10D osd15-5t OSD5-5T PIN-040A BPX65R PIN-10DI UV-100 PIN-10DP UV-020

    fCL16

    Abstract: fCL-16 UV324
    Text: INTEGRATED CIRCUITS DATA SHEET SAA4995WP PANorama-IC PAN-IC Preliminary specification File under Integrated Circuits, IC02 1997 Jun 10 Philips Semiconductors Preliminary specification PANorama-IC (PAN-IC) SAA4995WP FEATURES GENERAL DESCRIPTION • Horizontal sample rate conversion in both zoom and


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    PDF SAA4995WP SAA4995WP SAA4995WP/V1 SAA4995WPA SAA4995WPA-T OT187 fCL16 fCL-16 UV324

    uv-444bq

    Abstract: uv photodiode UV-444BQ UV-040BG uv photodiode 3030 UV-100BQ UV-215BG UV-040BQ UV-100BG UV-215BQ
    Text: E G & G/CANADA/OPTOELEK 47E 3030L.1Ü I> 0D[ 030fl 4 • CANA UV Series -V/-5I Features • • • • • Linearity Over W ide Dynamic Range Peak Responsivity: 0.62 A /W at 900 Nanometers Planar Diffused Structure O xide Passivated W ide Spectral Range Flat Noise Spectrum to DC


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    PDF 3030blà 0D0030à UV-040BG UV-040BQ UV-100BG UV-100BQ UV-215BG UV-215BQ UV-250BG UV-250BQ uv-444bq uv photodiode UV-444BQ uv photodiode 3030

    IC 7405

    Abstract: UV diode 200 nm UV-100BG uv photodiode, GaP SALEM UV diode 250 nm UV-100 V1402 140BQ dual photodiode
    Text: UV Series: 3030hG5 QGODlbS E7E D E G & G JU DSON Multi-Element Features • • • • ô Cross Talk < 1% Between Elements Linearity Over Wide Dynamic Range Flat Noise Spectrum to DC Oxide Passivated Structure Peak Responsivity: 0.62 A /W at 900 Nanometers


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    PDF 3030hG5 UV-100BG UV-100BQ UV-140BQ-2 UV-140BQ-4 UV-140-2 UV-140-4 UV-140-2 UV-140-4 IC 7405 UV diode 200 nm uv photodiode, GaP SALEM UV diode 250 nm UV-100 V1402 140BQ dual photodiode

    LT3973-3.3

    Abstract: L1117T-3.3 LI-CAM-IMX136-1.8 SFH7781-1/2/3 LM3670MFX-0.8 LT3971-3.3 LT1432-3.3
    Text: m o le x £ros$ p eference Numbers Old P a r t i Hew Part i O U P a rti New Part i Old Part # New Part i Old P a r t i 07262M 07 84581-0001 0 93 5 6 K 0 7 8 45 6 6 -5 03 5 0 94 6 2 K 0 7 84566-5041 09566M 07 8 4 5 6 6 -0 0 6 5 07264M 07 8 4 5 8 1 -0 00 0 0 93 5 7 K 0 7


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    PDF 07262M 09356K07 09462K07 09566M 07264M 09357K07 09462M 09567K07 07362M 09358K07 LT3973-3.3 L1117T-3.3 LI-CAM-IMX136-1.8 SFH7781-1/2/3 LM3670MFX-0.8 LT3971-3.3 LT1432-3.3

    UV140BQ4

    Abstract: 140BQ-2 UV-140BQ-4 UV100BG
    Text: E G 8. G/CANADA/OPTOELEK UV Series: 47E » 3Q3DblO GÜDDB1D E • CANA Multi-Element Features • • • • Cross Talk < 1 % Between Elements Linearity Over Wide Dynamic Range Flat Noise Spectrum to DC Oxide Passivated Structure • • • Peak Responsivity:


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    PDF UV-100BG UV-140BQ-2 UV-140BQ-4 UV-100BQ UV-140-4 UV-140-2/UV-140-4 UV-140-2 UV140BQ4 140BQ-2 UV-140BQ-4 UV100BG