UV140BQ4 Search Results

UV140BQ4 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Type	PDF
UV-140BQ-4		PerkinElmer Optoelectronics	si Pins uv Enhanced Low Noise 220 NM to 1100 NM		Original	PDF
UV-140BQ-4		EG&G	Ultraviolet-Optimized Photodiode		Scan	PDF

UV140BQ4 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
C1383 NPN transistor collector base and emitter Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383 Text: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,	Original	PDF	10-foot C1383 NPN transistor collector base and emitter NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
FND-100Q Abstract: FND-100 C30724E YAG-444-4A InGaAs APD quadrant PerkinElmer fnd-100q Si apd photodiode nir emitter leds with 700 to 900 nm SPCM-AQR C30950E Text: High-performance emitters & detectors for the most demanding applications PerkinElmer Optoelectronics PerkinElmer Optoelectronics provides Sensor, Lighting and Digital Imaging technologies to speed the development of breakthrough applications for customers in industrial, safety & security, consumer and biomedical markets.	Original	PDF	CAT0506P FND-100Q FND-100 C30724E YAG-444-4A InGaAs APD quadrant PerkinElmer fnd-100q Si apd photodiode nir emitter leds with 700 to 900 nm SPCM-AQR C30950E
IC 7405 Abstract: UV diode 200 nm UV-100BG uv photodiode, GaP SALEM UV diode 250 nm UV-100 V1402 140BQ dual photodiode Text: UV Series: 3030hG5 QGODlbS E7E D E G & G JU DSON Multi-Element Features • • • • ô Cross Talk < 1% Between Elements Linearity Over Wide Dynamic Range Flat Noise Spectrum to DC Oxide Passivated Structure Peak Responsivity: 0.62 A /W at 900 Nanometers	OCR Scan	PDF	3030hG5 UV-100BG UV-100BQ UV-140BQ-2 UV-140BQ-4 UV-140-2 UV-140-4 UV-140-2 UV-140-4 IC 7405 UV diode 200 nm uv photodiode, GaP SALEM UV diode 250 nm UV-100 V1402 140BQ dual photodiode
UV140BQ4 Abstract: 140BQ-2 UV-140BQ-4 UV100BG Text: E G 8. G/CANADA/OPTOELEK UV Series: 47E » 3Q3DblO GÜDDB1D E • CANA Multi-Element Features • • • • Cross Talk < 1 % Between Elements Linearity Over Wide Dynamic Range Flat Noise Spectrum to DC Oxide Passivated Structure • • • Peak Responsivity:	OCR Scan	PDF	UV-100BG UV-140BQ-2 UV-140BQ-4 UV-100BQ UV-140-4 UV-140-2/UV-140-4 UV-140-2 UV140BQ4 140BQ-2 UV-140BQ-4 UV100BG
UV100BG-DUAL Abstract: uv photodiode, GaP 140BQ 3030L UV100BG UV1404 UV-100BQ Text: E G & G 57E JUDSON UV Series: D 3030L. G5 O DDDl bS ô 'T'41-S’i Multi-Element Features • • • • Cross Talk < 1% Between Elements Linearity Over Wide Dynamic Range Flat Noise Spectrum to DC Oxide Passivated Structure • • • Peak Responsivity:	OCR Scan	PDF	3030L. UV-100BG UV-100BQ UV-100 UV-140-2 UV-140-4 UV-140-2/UV-140-4 UV-140-4 UV100BG-DUAL uv photodiode, GaP 140BQ 3030L UV100BG UV1404
uv photodiode, GaP Abstract: UV100BG-DUAL UV-140BQ-4 UV-140-2 UV-140BQ-2 uv photodiode UV-100BG 140BQ uv 100bg UV-100BQ Text: E fi & fi/CANAKA/OPTOELEK UV Series: 47E D • 3030bl0 00 003 10 2 * C A N A -V/-55 Multi-Element_ Features • • • • Cross Talk < 1% Between Elements Linearity Over W ide Dynamic Range Flat Noise Spectrum to DC Oxide Passivated Structure •	OCR Scan	PDF	303Gb UV-100BG UV-100BQ UV-140BQ-2 UV-140BQ-4 UV-140-4 UV-140-2 UV-140-4 UV-140-2/UV-140-4 uv photodiode, GaP UV100BG-DUAL UV-140BQ-4 UV-140-2 uv photodiode 140BQ uv 100bg