320 nm
Abstract: No abstract text available
Text: rev.1.0 10.06.15 UVMAX315-15 • • • • • • • Deep Ultraviolet Light Emission Source 320 nm, 10-15 mW Multi chip LED array Thermistor TEC optionally TO3 metal can with SiO2 glass lens UV Curing, Phototherapy Description UVMAX315 is a series of AlGaN based deep UV multi chip LED arrays, utilizing up to 4 parallel strings (common cathode) carrying
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UVMAX315-15
UVMAX315
360mA,
320 nm
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UV LED Seoul Semiconductor
Abstract: UV led 405 nm peak wavelength ULTRA VIOLET LED
Text: Copyrightⓒ 2003 Seoul Semiconductor Co.,Ltd. All right reserved. Ultra Violet LED UM2S0408C45 PRELIMINARY Seoul Semiconductor Features • 405 nm Ultra Violet LED • 8 mm Metal PKG • UV transparent resin • Chip material based GaN Absolute Maximum Ratings Ta=25℃
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UM2S0408C45
UV LED Seoul Semiconductor
UV led 405 nm peak wavelength
ULTRA VIOLET LED
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UV LED Seoul Semiconductor
Abstract: UV led 320 nm UV led 405 nm peak wavelength UM3P0808C45 UV led 405 nm seoul Seoul Semiconductor UV ULTRA VIOLET LED UV LED
Text: Copyrightⓒ 2003 Seoul Semiconductor Co.,Ltd. All right reserved. Ultra Violet LED UM3P0808C45 PRELIMINARY Seoul Semiconductor 8 Features • 405 nm Ultra Violet LED • 8 mm Metal PKG • UV transparent resin • Chip material based GaN 7.14 2.5 6.4 Absolute Maximum Ratings Ta=25℃
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UM3P0808C45
UV LED Seoul Semiconductor
UV led 320 nm
UV led 405 nm peak wavelength
UM3P0808C45
UV led 405 nm seoul
Seoul Semiconductor UV
ULTRA VIOLET LED
UV LED
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MTC325LS-UV
Abstract: No abstract text available
Text: Ultraviolet LED Chip Product No: M T C 325LS -UV Peak Emission Wavelength: 325 nm The MTC325LS-UV UV chip on large silicon submount is specifically designed for applications requiring high radiant power output and custom packaging solutions. FEATURES APPLICATIONS
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325LS
MTC325LS-UV
1270um
1470um
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MTC325SS-UV
Abstract: No abstract text available
Text: Ultraviolet LED Chip Product No: M T C 325SS-UV Peak Emission Wavelength: 325 nm The MTC325SS-UV UV chip on large silicon submount is specifically designed for applications requiring high radiant power output and custom packaging solutions. FEATURES APPLICATIONS
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325SS-UV
MTC325SS-UV
870um
770um
325SS
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UV laser diode 280 nm
Abstract: UVTOP320-HL-TO39 UVTOP265-FW-TO39
Text: ROITHNER LASERTECHNIK GmbH PRESENTS. UV-LEDS, 250 nm . 365 nm UV-LED, series UVTOP, TO-39, unique extreme short UV wavelengths UVTOP255-FW-TO39, 255 nm +/- 5 nm, 20 mA, TO-39, flat window, datasheet UVTOP255-HL-TO39, 255 nm +/- 5 nm, 20 mA, TO-39, hemispherical lens window, datasheet
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UVTOP255-FW-TO39,
UVTOP255-HL-TO39,
UVTOP255-BL-TO39,
UVTOP255-NW-TO39,
UVTOP265-FW-TO39,
UVTOP265-HL-TO39,
UVTOP265-BL-TO39,
UVTOP265-NW-TO39,
2006-March-01
76/DG
UV laser diode 280 nm
UVTOP320-HL-TO39
UVTOP265-FW-TO39
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mitsubishi fx 20
Abstract: No abstract text available
Text: Programmable Display GT SERIES Conforming to EMC Directive Excellent Visibility and Environmental Resistance High visibility display even in bright environments, it’s also compact. Introducing a new product line in the Tough Series with excellent environmental resistance
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GT03-E
GT32T-E
GT03T-E
mitsubishi fx 20
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Untitled
Abstract: No abstract text available
Text: Programmable Display GT SERIES Conforming to EMC Directive Enhanced Environmental Resistance A new IP67 environmental rating gives the GT-32E Series excellent visibility, operability, and functionality. The LCD picture is simulated images. 2011.09 panasonic-electric-works.net/sunx
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GT-32E
GT32-E
GT32M-E
GT32T-E
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L375R-42
Abstract: 375nm
Text: epitex Φ4 MOLD LED LAMP L375R-42 Opto-Device & Custom LED Lead Pb Free Product – RoHS Compliant L375R-42 UV LED Lamp with UV resistant resin L375R-42 is an InGaN LED mounted on a lead frame with UV resistant resin. On forward bias, it emits a band of UV light that peaks 375nm.
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L375R-42
L375R-42
375nm.
375nm
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Untitled
Abstract: No abstract text available
Text: QBLP670_series PLCC2 LED - QT-Brightek PLCC Series PLCC2 LED Part No.: QBLP670 Series Product: QBLP670_series Date: September 30, 2013
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QBLP670
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S1337-1010BQ
Abstract: S1337-16BQ S1337-16BR S1337 S1337-1010BR S1337-33BQ S1337-33BR S1337-66BQ S1337-66BR br mark
Text: PHOTODIODE Si photodiode S1337 series For UV to IR, precision photometry Features Applications l High UV sensitivity: QE 75 % λ=200 nm l Low capacitance l Analytical equipment l Optical measurement equipment • General ratings / Absolute maximum ratings
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S1337
S1337-16BQ
S1337-16BR
S1337-33BQ
S1337-33BR
S1337-66BQ
S1337-66BR
S1337-1010BQ
S1337-1010BR
SE-171
S1337-1010BQ
S1337-16BQ
S1337-16BR
S1337-1010BR
S1337-33BQ
S1337-33BR
S1337-66BQ
S1337-66BR
br mark
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Untitled
Abstract: No abstract text available
Text: N E W LINEAR IRRADIATION TYPE UV-LED UNIT Why Hamamatsu? As a pioneer and leader in photonics technology, Hamamatsu has stacked up many successes along the way. Hamamatsu now offers a new twist with linear irradiation type UV-LED units in a “New Profile” UV light
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SE-164
TLSZ1007E03
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Untitled
Abstract: No abstract text available
Text: epitex Opto-Device & Custom LED UV LED SMBB365H-1100-05 Lead Pb Free Product – RoHS Compliant SMBB365H-1100-05 UV SMD LED SMBB365H-1100-05 is an AlGaN LED mounted on UV resistant package with copper heat sink and is covered with silicone resin. On forward bias, it emits a band of 365nm.
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SMBB365H-1100-05
SMBB365H-1100-05
365nm.
1000um
1000um
365nm
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Untitled
Abstract: No abstract text available
Text: rev.2.0 08.05.15 DUV325-CHIP • • • • • Deep Ultraviolet Light Emission Source 325 nm, 1.5 mW Naked Bare Die Flip chip type Beam angle 144 deg. Description DUV325-CHIP is an AlGaN based DEEP-UV LED emission source, that is available as bare chip die, and in two different
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DUV325-CHIP
DUV325-CHIP
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Untitled
Abstract: No abstract text available
Text: NICHIA STS-DA1-2394D <Cat.No.130219> N I CH I A CORPORATI ON SPECI FI CATI ON S FOR UV LED N CSU0 3 3 B T Pb-free Reflow Soldering Application Built-in ESD Protection Device RoHS Compliant NICHIA STS-DA1-2394D <Cat.No.130219> SPECIFICATIONS (1) Absolute Maximum Ratings
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STS-DA1-2394D
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A9762-01
Abstract: cmos image sensor UV LED 320 nm IR SENSOR nir source A9762 A10670 C10082MD ccd image sensor ccd Linear Image Sensor
Text: MODULE Mini-spectrometer TM series C10082MD, C10083MD For UV to near IR, integrating optical system, image sensor and circuit TM series mini-spectrometers are polychromators integrated with optical elements, an image sensor and a driver circuit. Two models are
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C10082MD,
C10083MD
C10082MD
SE-171
KACC1119E08
A9762-01
cmos image sensor
UV LED 320 nm
IR SENSOR
nir source
A9762
A10670
C10082MD
ccd image sensor
ccd Linear Image Sensor
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Untitled
Abstract: No abstract text available
Text: リニア照射型UV-LEDユニット Why Hamamatsu? 光技術のパイオニアとして多くの実績を積み上げてきた浜松ホトニクスから これまで培ってきた技術を盛り込んだUV光源の「新しいカタチ」、 リニア型UV-LEDユニットのご提案です。
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L11403-1104
L11403-2104
L11403-1112
L11403-2112
TLSZ1007J05
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254 nm uv LED
Abstract: UV source led 254 nm peak ACL01-SC-UUUU-E05-C01-L-0000 ACL01-SC-UUUU-E05-C01-L-O000 UV led 320 nm ED-4701 IEC825 LHS-AL25 LHS-AL25-L22 IEC 320 c3
Text: D A T A S H E E T ACULED VHL UV ACL01-SC-UUUU-E05-C01-L-0000 The new ACULED® VHL Very High Lumen delivers outstanding brightness, improved wall-plug efficiency and excellent thermal management, all in a compact, easy-to-assemble package. Features and Benefits
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ACL01-SC-UUUU-E05-C01-L-0000
DTS0507
254 nm uv LED
UV source led 254 nm peak
ACL01-SC-UUUU-E05-C01-L-0000
ACL01-SC-UUUU-E05-C01-L-O000
UV led 320 nm
ED-4701
IEC825
LHS-AL25
LHS-AL25-L22
IEC 320 c3
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ir remote power meter
Abstract: spectrophotometer G1746
Text: Selection Guide Spectral Response Range nm 400 600 800 1000 200 _l I I I Feature Major Application Type No. 1200 I I 1 Listed : Pa9e Si Photodiodes 190 1100 190 1000 320 1100 320 UV to IR range, for precision photometry
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S1336/S
S1226/S
1227ngth
S2381,
S2382
S5139,
S6045
S5343,
S5344
S5345
ir remote power meter
spectrophotometer
G1746
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S1336-5BQ
Abstract: S1337-33BR
Text: Si Photodiodes UV to IR Range, for Precision Photometry Type No. Dimensional Effective Active Outline Package Active (P.46 to 49)/ Area Size Area Window Material ' 1 (mm) (mm) (mm2) Spectral Response Range X Peak Sensitivity Wavelength Ap (nm) (nm) Short Circuit
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S1336
S1336-18BQ
S1336-18BK
S1336-5BQ
S1336-5BK
S1336-44BQ
S1336-44BK
S1336-8BQ
S1336-8BK
S1337-1010BR
S1337-33BR
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3365bq
Abstract: SI336
Text: Si Photodiodes Type No. iDimensional I Outline Package P.40-44 / Window Material* (mm) (UV to IR Range, for Precision Photometry) Active Effective Spectral Area Size Active Response Area Range Peak Sensitivity Wavelength Ap (mm2) (nm) (nm) (mm) Photo Sensitivity S (A/W)
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200nm
633nm
930nm
S1336
S133f,
44BK1OBR
S2551
1336-5BÛ
S1337-
3365bq
SI336
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115 320 01
Abstract: S1337-101OBR S1336-5BK 26EA
Text: Silicon Photodiodes UV to IR Range, for Precision Photometry Type No. Dimensional Outline Package (P.38-42)/ Window Material* (mm) Active Area Size (mm) Effective Spectral Active Response Area Range (mm2) (nm) Peak Sensitivity Wavelength Xp Short Circuit
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200nm
633nm
930nm
S1336
S1336-18BQ
S1336-18BK
S1336-5BÛ
S1336-5BK
S1336-44BQ
S1336-44BK
115 320 01
S1337-101OBR
26EA
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Untitled
Abstract: No abstract text available
Text: Si Photodiodes UV to IR Range, for Precision Photometry Type No. Dimensional Outline Package (P.40-47)/ Window Material (mm) Active Effective Spectral Area Size Active Response Area Range (mm) (mm2) (nm) Peak Sensitivity Wavelength /Ip (nm) Short Circuit
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S1336
S1336-18BQ
336-18BK
S1336-5BQ
S1336-44BK
S1336-8BQ
S1336-8BK
11tage
KSPDB0061EA
KSPDBQ052EB
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Diode KD 514
Abstract: B30C250 GD507A DIODE OA-172 kyx 28 SY360 ky 202 h thyristor B280C1500 C5000-3300 BZY79C
Text: Deutsche Post Studiotechnik Fernsehen BauelementeMitteilunq Nr.7 Diodenvergleichsliste Verfasser: Dipl.-Ing. Klaus-Peter Hartmann Abteilung PMM Herausgeber: \>y Studiotechnik Fernsehen Informationsstelle RIS 1429 1 19 9 Berlin Rudower Chaussee 3 Fernruf: 6 7 3 3381
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