application of sequential circuit
Abstract: UTC 801 sequential IC sequential
Text: UTC 801/802 INTEGRATED CIRCUIT 3/4 STRINGS Xmas LIGHT CONTROL FEATURES *Adjustable flash rate. *Programmable 2/3/4 strings of bulbs. *UTC 801 sequential mode for about 57 sec. 4 light string flash for about 3 sec. according to normal fosc. then back to sequential again.
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QW-R120-001
application of sequential circuit
UTC 801
sequential
IC sequential
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Untitled
Abstract: No abstract text available
Text: UTC 801/802 INTEGRATED CIRCUIT 3/4 STRINGS Xmas LIGHT CONTROL FEATURES *Adjustable flash rate. *Programmable 2/3/4 strings of bulbs. *UTC 801 sequential mode for about 57 sec. 4 light string flash for about 3 sec. according to normal fosc. then back to sequential again.
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QW-R120-001
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Light Controller
Abstract: UTC801
Text: UTC 801 INTEGRATED CIRCUIT 3/4 STRINGS Xmas LIGHT CONTROL FEATURES *Adjustable flash rate. *Programmable 2/3/4 strings of bulbs. APPLICATION *Xmas light controller, any AC control toys. ELECTRICAL CHARACTERISTICS @VDD=3.6V unless otherwise specified PARAMETER
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QW-R120-001
Light Controller
UTC801
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2SC2235
Abstract: transistor 2sC2235 2sc223 2SC2235L 2SA965 UTC 2SC2235L
Text: UNISONIC TECHNOLOGIES CO., LTD 2SC2235 NPN SILICON TRANSISTOR AUDIO POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS FEATURES * Complimentary to UTC 2SA965 Lead-free: 2SC2235L Halogen-free: 2SC2235G ORDERING INFORMATION Ordering Number
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2SC2235
2SA965
2SC2235L
2SC2235G
2SC2235-x-T9N-B
2SC2235L-x-T9N-B
2SC2235G-x-T9N-B
2SC2235-x-T9N-K
2SC2235L-x-T9N-K
2SC2235G-x-T9N-K
2SC2235
transistor 2sC2235
2sc223
2SC2235L
2SA965
UTC 2SC2235L
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sot-23 2L
Abstract: No abstract text available
Text: UTC MMBT5401 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES *Collector-Emitter Voltage: VCEO=-150V *Collector Dissipation: Pc max =350mW *High current gain 2 1 APPLICATIONS 3 *Telephone Switching Circuit *Amplifier MARKING SOT-23
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MMBT5401
-150V
350mW
OT-23
QW-R206-011
sot-23 2L
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PDF
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Untitled
Abstract: No abstract text available
Text: UTC 2N5401 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES *Collector-Emitter Voltage: VCEO=-150V *Collector Dissipation: Pc max =625mW *High current gain 1 APPLICATIONS *Telephone Switching Circuit *Amplifier TO-92 1:EMITTER 2:BASE
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2N5401
-150V
625mW
QW-R201-001
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Untitled
Abstract: No abstract text available
Text: UTC 2SC2235 NPN EPITAXIAL SILICON TRANSISTOR AUDIO POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS FEATURES *Complimentary to 2SA965 1 TO-92NL 1:EMITTER 2:COLLECTOR 3. BASE ABSOLUTE MAXIMUM RATINGS Ta=25°C ,unless otherwise specified
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2SC2235
2SA965
O-92NL
QW-R211-012
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2SC2235
Abstract: 2sc2235 datasheet transistor 2sC2235 2SA965
Text: UTC 2SC2235 NPN EPITAXIAL SILICON TRANSISTOR AUDIO POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS FEATURES *Complimentary to 2SA965 1 TO-92NL 1:EMITTER 2:COLLECTOR 3. BASE ABSOLUTE MAXIMUM RATINGS Ta=25°C ,unless otherwise specified
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2SC2235
2SA965
O-92NL
QW-R211-012
2SC2235
2sc2235 datasheet
transistor 2sC2235
2SA965
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PDF
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Untitled
Abstract: No abstract text available
Text: UTC 2N5401 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES *Collector-Emitter Voltage: VCEO=-150V *Collector Dissipation: Pc max =625mW *High current gain 1 APPLICATIONS *Telephone Switching Circuit *Amplifier TO-92 1:EMITTER 2:BASE
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2N5401
-150V
625mW
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2N5401
Abstract: No abstract text available
Text: UTC 2N5401 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES *Collector-Emitter Voltage: VCEO=-150V *Collector Dissipation: Pc max =625mW *High current gain 1 APPLICATIONS *Telephone Switching Circuit *Amplifier TO-92 1:EMITTER 2:BASE
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2N5401
-150V
625mW
QW-R201-001
2N5401
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Untitled
Abstract: No abstract text available
Text: UTC 2SD718 NPN EPITAXIAL SILICON TRANSISTOR HIGH POWER AMPLIFIER APPLICATION FEATURES *Recommended for 45~50W Audio Frequency *Amplifier Output Stage. *Complementary to 2SB688. 1 TO-3P 1: BASE ABSOLUTE MAXIMUM RATINGS Ta=25 PARAMETER Collector-Base Voltage
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2SD718
2SB688.
QW-R214-003
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PDF
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2sC2235
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SC2235 AUDIO POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS NPN SILICON TRANSISTOR 1 TO-92 FEATURES * Complimentary to UTC 2SA965 1 TO-92NL ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free
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2SC2235
2SA965
O-92NL
2SC2235L-x-T92-B
2SC2235G-x-T92-B
2SC2235L-x-T92-K
2SC2235G-x-T92-K
2SC2235L-x-T92-R
2SC2235G-x-T92-R
2SC2235L-x-T9N-B
2sC2235
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marking G1 sot23 UTC
Abstract: No abstract text available
Text: UTC MMBT5551 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * High Collector-Emitter Voltage: VCEO=160V *High current gain 2 1 APPLICATIONS *Telephone switching circuit *Amplifier 3 MARKING SOT-23 G1 1:EMITTER 2:BASE 3:COLLECTOR
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MMBT5551
OT-23
QW-R206-010,
marking G1 sot23 UTC
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transistor 2sd718
Abstract: 2SD718 2sd718 transistor 2SD718 o 2sd718 amplifier transistor 2SB688 2SB688 80 V NPN epitaxial silicon transistor applications of single stage common emitter
Text: UTC 2SD718 NPN EPITAXIAL SILICON TRANSISTOR HIGH POWER AMPLIFIER APPLICATION FEATURES *Recommended for 45~50W Audio Frequency *Amplifier Output Stage. *Complementary to 2SB688. 1 TO-3P 1: BASE 2:COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS Ta=25℃ PARAMETER
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2SD718
2SB688.
QW-R214-003
transistor 2sd718
2SD718
2sd718 transistor
2SD718 o
2sd718 amplifier
transistor 2SB688
2SB688
80 V NPN epitaxial silicon transistor
applications of single stage common emitter
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Untitled
Abstract: No abstract text available
Text: UTC 2SD718 NPN EPITAXIAL SILICON TRANSISTOR HIGH POWER AMPLIFIER APPLICATION FEATURES *Recommended for 45~50W Audio Frequency *Amplifier Output Stage. *Complementary to 2SB688. 1 TO-3P 1: BASE 2:COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS Ta=25℃ PARAMETER
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2SD718
2SB688.
QW-R214-003
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MMBT5551 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR DESCRIPTION The UTC MMBT5551 is a high voltage fast-switching NPN power transistor. It is characterized with high breakdown voltage, high current gain and high switching speed.
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MMBT5551
MMBT5551
MMBT5551L-x-AE3-R
MMBT5551G-x-AE3-R
OT-23
QW-R206-010.
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MMBT5551 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR 3 DESCRIPTION The UTC MMBT5551 is a high voltage fast-switching NPN power transistor. It is characterized with high breakdown voltage, high current gain and high switching speed.
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MMBT5551
MMBT5551
OT-23
O-236)
MMBT5551G-x-AE3-R
QW-R206-010.
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Untitled
Abstract: No abstract text available
Text: UTC 2N5551 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * High Collector-Emitter Voltage: VCEO=160V *High current gain 1 APPLICATIONS *Telephone switching circuit *Amplifier TO-92 1:EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C ,unless otherwise specified
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2N5551
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utc 3845 D
Abstract: divide-by-32768 GP2021 IG GQ1R CH9E 854S utc 3845 GPS Receiver RF Front End 44-LEAD
Text: GP2021 GPS 12-Channel Correlator DS4077 Issue 3.1 January 2000 Features Ordering Information ● ● ● ● ● ● ● ● ● ● 12 Fully Independent Correlation Channels 1pps Timing Output UTC Alignment with Software On-Chip Dual UART and Real Time Clock
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GP2021
12-Channel
DS4077
32-bit
ARM60
150mW
GP2015
GP2010
MIL-STD-883B
GP2021/IG/GQ1R
utc 3845 D
divide-by-32768
GP2021 IG GQ1R
CH9E
854S
utc 3845
GPS Receiver RF Front End 44-LEAD
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Untitled
Abstract: No abstract text available
Text: UTC 2N5551 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * High Collector-Emitter Voltage: VCEO=160V *High current gain 1 APPLICATIONS *Telephone switching circuit *Amplifier TO-92 1:EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C , unless otherwise specified
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2N5551
QW-R201-002
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PDF
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2N5551
Abstract: No abstract text available
Text: UTC 2N5551 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * High Collector-Emitter Voltage: VCEO=160V *High current gain 1 APPLICATIONS *Telephone switching circuit *Amplifier TO-92 1:EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C ,unless otherwise specified
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2N5551
QW-R201-002
2N5551
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PA3112
Abstract: MSOP-10
Text: UNISONIC TECHNOLOGIES CO., LTD PA3112 CMOS IC DUAL 150mW AUDIO POWER AMPLIFIER DESCRIPTION The UTC PA3112 is a dual audio power amplifier with differential inputs capable of delivering typically 150mW per channel of continuous average power to an 16Ω load with less
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PA3112
150mW
PA3112
MSOP-10
-150mW
QW-R502-100
MSOP-10
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MSOP-10
Abstract: PA6112 PA6112L-SM2-R PA6112-SM2-R PA6112-SM2-T
Text: UNISONIC TECHNOLOGIES CO., LTD PA6112 CMOS IC DUAL 150MW AUDIO POWER AMPLIFIER DESCRIPTION The UTC PA6112 is a dual audio power amplifier with differential inputs capable of delivering typically 150mW per channel of continuous average power to an 16Ω load with less than 0.1%
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PA6112
150MW
PA6112
MSOP-10
PA6112L
-150mW
MSOP-10
PA6112L-SM2-R
PA6112-SM2-R
PA6112-SM2-T
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PDF
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MSOP-10
Abstract: PA6112 PA6112L-SM2-R PA6112-SM2-R PA6112-SM2-T
Text: UNISONIC TECHNOLOGIES CO., LTD PA6112 CMOS IC DUAL 150mW AUDIO POWER AMPLIFIER DESCRIPTION The UTC PA6112 is a dual audio power amplifier with differential inputs capable of delivering typically 150mW per channel of continuous average power to an 16Ω load with less than 0.1%
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PA6112
150mW
PA6112
MSOP-10
PA6112L
-150mW
MSOP-10
PA6112L-SM2-R
PA6112-SM2-R
PA6112-SM2-T
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