RURU100120
Abstract: URU100120
Text: URU100120 Data Sheet January 2000 File Number 3545.3 100A, 1200V Ultrafast Diode Features The URU100120 is an ultrafast diode with soft recovery characteristics trr < 125ns . It has low forward voltage drop and is silicon nitride passivated ion-implanted epitaxial
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RURU100120
RURU100120
125ns)
125ns
URU100120
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URU100120
Abstract: RURU100120
Text: URU100120 Data Sheet January 2000 File Number 3545.3 100A, 1200V Ultrafast Diode Features The URU100120 is an ultrafast diode with soft recovery characteristics trr < 125ns . It has low forward voltage drop and is silicon nitride passivated ion-implanted epitaxial
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Original
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PDF
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RURU100120
RURU100120
125ns)
125ns
URU100120
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URU100120
Abstract: tic 122 RURU100120
Text: URU100120 S E M I C O N D U C T O R 100A, 1200V Ultrafast Diode April 1945 Features Package • Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . <125ns JEDEC STYLE SINGLE LEAD TO-218 o • Operating Temperature . . . . . . . . . . . . . . . . . . . . +175 C
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RURU100120
125ns
O-218
TA49020)
125ns)
100oC
URU100120
tic 122
RURU100120
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65e9 transistor
Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12
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1-888-INTERSIL
MS-012AA
MO-153AA
RF1K49090
RF1K49093
RF1K49092
ITF87056DQT
ITF87072DK8T
ITF87008DQT
RF1K49223
65e9 transistor
transistor 75307D
Transistor 65e8
SD MOSFET DRIVE DATASHEET 4468 8 PIN
G40N60
RHR15120 equivalent
10n120bnd
76107d
transistor 76121D
emerson three phase dc motor driver service note
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URU100120
Abstract: RURU100120 URU100
Text: URU100120 Data Sheet January 2002 100A, 1200V Ultrafast Diode Features The URU100120 is an ultrafast diode with soft recovery characteristics trr < 125ns . It has low forward voltage drop and is silicon nitride passivated ion-implanted epitaxial planar construction.
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Original
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RURU100120
RURU100120
125ns)
125ns
175oC
URU100120
URU100
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URU100120
Abstract: No abstract text available
Text: URU100120 Semiconductor 100A, 1200V U ltrafast Diode April 1995 Package Features • U Itrafast with Soft Recovery. <125ns JEDEC STYLE SINGLE LEAD TO-218 • Operating Temperature. +175°C
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OCR Scan
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RURU100120
125ns
O-218
TA49020)
125ns)
URU100120
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