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    California Eastern Laboratories (CEL) UPC1663GV-A

    IC AMP DIFFERENTIAL 8SO
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    California Eastern Laboratories (CEL) UPC1663GV-E1-A

    IC AMP DIFFERENTIAL 8SO
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    California Eastern Laboratories (CEL) UPC1663GV-EVAL

    EVAL BOARD FOR UPC1663
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    UPC1663GV Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Type PDF
    UPC1663GV California Eastern Laboratories Ultra-wideband Differential Video Amplifier Original PDF
    UPC1663GV NEC DC-VDF wide band I/O amplifier IC Original PDF
    UPC1663GV-A California Eastern Laboratories Linear - Amplifiers - Video Amps and Modules, Integrated Circuits (ICs), IC VIDEO AMP DIFF 8-SSOP Original PDF
    UPC1663GV-E1 NEC DC to VHF WIDEBAND DIFFERENTIAL INPUT AND OUTPUT AMPLIFIER IC Original PDF
    uPC1663GV-E1 NEC DC To VHF Wideband Differential Input and Output Amplifier IC Original PDF
    UPC1663GV-E1-A California Eastern Laboratories Linear - Amplifiers - Video Amps and Modules, Integrated Circuits (ICs), IC VIDEO AMP DIFF 8-SSOP Original PDF
    UPC1663GV-E1-A California Eastern Laboratories ULTRA-WIDEBAND DIFFERENTIAL VIDEO AMPLIFIER Original PDF
    UPC1663GV-E1-A NEC IC DIFF AMP SINGLE 13V 8SSOP T/R Original PDF
    UPC1663GV-E3 NEC Ultra-wideband differential video amplifier. Original PDF
    UPC1663GV-EVAL California Eastern Laboratories Evaluation and Demonstration Boards and Kits, Programmers, Development Systems, EVAL BOARD FOR UPC1663 Original PDF

    UPC1663GV Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    UPC1663GV-E1

    Abstract: UPC1663G UPC1663G-E1 UPC1663GV upc16 upc1663
    Text: ULTRA-WIDEBAND UPC1663G DIFFERENTIAL VIDEO AMPLIFIER UPC1663GV FEATURES SINGLE ENDED VOLTAGE GAIN vs. FREQUENCY Single Ended Voltage Gain, AVS dB • BANDWIDTH AND TYPICAL GAIN 120 MHz at AVOL = 300 170 MHz at AVOL = 100 700 MHz at AVOL = 10 • VERY SMALL PHASE DELAY


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    PDF UPC1663G UPC1663GV UPC1663G 50cal UPC1663G, UPC1663G-E1 2500/Reel UPC1663GV-E1 1000/Reel 24-Hour UPC1663GV-E1 UPC1663G-E1 UPC1663GV upc16 upc1663

    UPC1663GV

    Abstract: UPC1663GV-E1
    Text: ULTRA-WIDEBAND UPC1663GV DIFFERENTIAL VIDEO AMPLIFIER FEATURES SINGLE ENDED VOLTAGE GAIN vs. FREQUENCY Single Ended Voltage Gain, AVS dB • BANDWIDTH AND TYPICAL GAIN: 120 MHz at AVOL = 300 170 MHz at AVOL = 100 700 MHz at AVOL = 10 • VERY SMALL PHASE DELAY


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    PDF UPC1663GV UPC1663GV 24-Hour UPC1663GV-E1

    UPC1663GV-E1-A

    Abstract: UPC1663GV
    Text: DC to VHF UPC1663GV DIFFERENTIAL VIDEO AMPLIFIER FEATURES BANDWIDTH AND TYPICAL GAIN: 120 MHz at AVOL = 300 170 MHz at AVOL = 100 700 MHz at AVOL = 10 • VERY SMALL PHASE DELAY • GAIN ADJUSTABLE FROM 10 TO 300 • NO FREQUENCY COMPENSATION REQUIRED DESCRIPTION


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    PDF UPC1663GV UPC1663GV 40nded 24-Hour UPC1663GV-E1-A

    UPC1663GV

    Abstract: UPC1663GV-E1-A 10 gb laser diode microwave detector diode RA-1000
    Text: ULTRA-WIDEBAND UPC1663GV DIFFERENTIAL VIDEO AMPLIFIER FEATURES SINGLE ENDED VOLTAGE GAIN vs. FREQUENCY Single Ended Voltage Gain, AVS dB • BANDWIDTH AND TYPICAL GAIN: 120 MHz at AVOL = 300 170 MHz at AVOL = 100 700 MHz at AVOL = 10 • VERY SMALL PHASE DELAY


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    PDF UPC1663GV UPC1663GV UPC1663GV-E1-A 10 gb laser diode microwave detector diode RA-1000

    FET marking code g5d

    Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
    Text: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .


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    PDF R09CL0001EJ0100 PX10727EJ02V0PF) FET marking code g5d PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic

    nec mosfet marked v75

    Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


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    PDF G0706 PX10727EJ02V0PF nec mosfet marked v75 NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77

    2SK2500

    Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
    Text: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose


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    PDF

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


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    PDF GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2

    ne3511s02 s2p

    Abstract: ne3512s02 s2p SMD M05 sot SMD transistor M05 S06 SMD UPG2162T5N ne3210s01 NE321000 QFN2020 UPG2250T5N
    Text: 2007 California Eastern Laboratories HEADQUARTERS U.S. REPS INTERNATIONAL REPS CEL 4590 Patrick Henry Drive Santa Clara CA 95054 Tel: 408 919-2500 Fax: (408) 988-0279 www.cel.com Northwest Disman Bakner (800) 347-3010 Canada BC, Alberta, Saskatchewan


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    PDF 07/2M 847Indiana/Kentucky ne3511s02 s2p ne3512s02 s2p SMD M05 sot SMD transistor M05 S06 SMD UPG2162T5N ne3210s01 NE321000 QFN2020 UPG2250T5N

    nec b1007

    Abstract: T79 code marking C3206 marking s16 marking code C1H qfn marking t88 C3H marking NE02107 T79 marking C3206G
    Text: California Eastern Laboratories Package Dimensions PART NUMBER DESCRIPTION NE68018 NEC part numbers are specified by die and package number. NE680 Die "18" Package PACKAGE MARKINGS NEC devices are marked with various indications which indicate part type, lot code year and month . Due to size constraints,


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    PDF NE68018 NE680 UPA801TC UPA808TC UPA821TC UPA826TC UPA861TD UPA831TC UPA862TD UPA835TC nec b1007 T79 code marking C3206 marking s16 marking code C1H qfn marking t88 C3H marking NE02107 T79 marking C3206G

    UPB1509

    Abstract: uPB1507 UPC1678GV 2721 G138 UPB1506GV 1506 1686 S087 UPB1507GV
    Text: Packaging Schematic All dimensions are in millimeters, and typical unless otherwise specified. Drawings are not to scale. S08 7 8 6 5 Detail of Lead End N 1 2 3 3.0 MAX +7˚ 4 3 -3˚ 4.94 ± 0.2 +0.10 0.15 -0.05 1.5±0.1 0.87±0.2 3.2±0.1 1.8 MAX 0.1 ± 0.1


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    PDF UPB1506GV UPC1686GV UPB1507GV UPC2721GV UPB1508GV UPC2722GV UPB1509GV UPG132G UPC1663GV UPG133G UPB1509 uPB1507 UPC1678GV 2721 G138 UPB1506GV 1506 1686 S087 UPB1507GV

    26 sot-363 rf power amplifier

    Abstract: UPC3232TB upc8211 UPC3223TB QFN2020 uPC2710 s06 A UPC1678GV UPC2745TB UPC2747TB
    Text: NEC Silicon RFIC Amplifiers – Low Power, Wideband & SiGe/SiGeC Low Power Amplifiers Part Number Typical ELECTRICAL CHARACTERISTICS1 TA = 25°C Frequency Range VCC ICC NF Gain RLIN RLOUT P1dB ISOL @ 3dB (V) (mA) (dB) (dB) (dB) (dB) (dBm) (dB) down Package


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    PDF UPC2745TB OT-363 UPC2746TB UPC2747TB UPC2748TB IIP32 UPC8190K DC-10 UPC8194K 26 sot-363 rf power amplifier UPC3232TB upc8211 UPC3223TB QFN2020 uPC2710 s06 A UPC1678GV

    SMD transistor M05

    Abstract: smd TRANSISTOR code m05 wy smd transistor UPD5740 NE66200 TRANSISTOR m05 smd UPD5740T6N UPG2159T6R SMD transistor M05 driver 50 VOLTS 5 amp smd sot-89 TRANSISTOR
    Text: NEC XXXXXXXXXX RF & Wireless Semiconductors 2010 2 P R O D U C T S b y A P P L I C AT I O N California Eastern Laboratories serves designers, OEMs and contract manufacturers in the RF & Wireless, Mobilecomm, Multimedia, Broadband Communications, Industrial Control, and Automated Test Equipment ATE


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    PDF 10/2M SMD transistor M05 smd TRANSISTOR code m05 wy smd transistor UPD5740 NE66200 TRANSISTOR m05 smd UPD5740T6N UPG2159T6R SMD transistor M05 driver 50 VOLTS 5 amp smd sot-89 TRANSISTOR

    mc10087f1

    Abstract: mc-10041 mc-10043 MC-10087F1-XXX MC-10044 MC-10051BF1 2SC5664 2SC5292 UPC1701C mc-10059
    Text: 1/89 Lead-free Semiconductor Product Conditions Renesas Electronics Lead-free Semiconductor Product Conditions August 17, 2010 1.Please inquire of Renesas Electronics sales person about lead-free product status while is not listed in the following table.


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    PDF IR260/WS260/HS350 IR260/HS350 mc10087f1 mc-10041 mc-10043 MC-10087F1-XXX MC-10044 MC-10051BF1 2SC5664 2SC5292 UPC1701C mc-10059

    2SK238

    Abstract: pc1663c 10CMR NDL2102 NDL2104 NDL2208 PC1663G PC1663GV UPC1664 G12290J
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


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    PDF PC1663 G12290JJ3V0AN003 G12290JJ3V0AN00 FAX044548-7900 2SK238 pc1663c 10CMR NDL2102 NDL2104 NDL2208 PC1663G PC1663GV UPC1664 G12290J

    Untitled

    Abstract: No abstract text available
    Text: ULTRA-WIDEBAND DIFFERENTIAL VIDEO AMPLIFIER FEATURES_ UPC1663G UPC1663GV SINGLE ENDED VOLTAGE GAIN vs. FREQUENCY • BANDWIDTH AND TYPICAL GAIN 120 MHz at A v o l = 300 170 MHz at A v o l = 100 700 MHz at A v o l = 10 • VERY SMALL PHASE DELAY


    OCR Scan
    PDF UPC1663G UPC1663GV UPC1663G, UPC1663GV PC1663G-E1 UPC1663GV-E1 2500/Reel 1000/Reel

    Untitled

    Abstract: No abstract text available
    Text: Video Amplifiers ELECTRICAL CHARACTERISTICS Ta s. 2 5 t! Vcc (V) VMM AVd17 tí*.? tpd4? Vchcmï5 V o p p (MHz) (ns) (ns) (V) (Vp-p) Gain 1 Gain 2 Gain 1 Gain 2 Gain 1 Gain 2 Sain 1 Gain 2 Icc (mA) ISINK6 <mA) Demand Pari Number TYP TYP TYP TYP TYP TYP TYP


    OCR Scan
    PDF UPC1663GV AVd17 UPG137GV UPG138GV UPG152TA OT-26

    t06 sot 23

    Abstract: UPC2710 upc2713
    Text: RF 1C Selection Guide WIDEBAND AMPLIFIERS ELECTRICAL CHARACTERISTICS’ f t * • 25“C Typical Fraquancy Hangs Vcc 93H B V) Pan Numbar MIN 9m NF (dB) Icc <mA) TYP MAX Gain RLin RLout PldB ISOL (dB) (dB) (dB) (dBm) (dB) TYP TYP TYP TYP TYP MIN TYP MAX Pfeg.


    OCR Scan
    PDF UPC1678GV6 UPC2708T2 UPC2709TB2 UPC2710T6 UPC2711TB2 UPC2712TB2 UPC2713T6 UPC2745TB6 UPC2746TB6 UPC2747T3 t06 sot 23 UPC2710 upc2713

    transistor A 564

    Abstract: transistor am s20 T06 transistor transistor t06 19 transistor t06
    Text: Transistor Arrays gtECTRICAL CHARACTERISTICS <7> * 2SX! • fr Mm SLt * ; UPA101G1 UPA1Q2G2 UPA103G3 hFE Ces CCS: mA) CcB tpF) (pF) (pF) MAX MAX TYP TYP TYP TYP 1.0 1.0 1.0 1.0 100 - 1.0 1.0 100 100 0.9 1.4 1.4 1.4 •:1.4 iCBO (GHz) TYP MAX 9 40 40 40


    OCR Scan
    PDF UPA101G1 UPA102G2 UPA103G3 DC-150 UPB1004GS1 UPC8116GR2 UPC2798GR3 transistor A 564 transistor am s20 T06 transistor transistor t06 19 transistor t06