unr211

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR211x Series (UN211x Series) Silicon PNP epitaxial planar type Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 0.4±0.2 5˚ 2 1 (0.95) (0.95)

UNR211W

Contextual Info: Transistors with built-in Resistor UNR211W Silicon PNP epitaxial planer type Unit: mm For digital circuit 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 0.65 • REB = 100 kΩ, without RB , built-in high-resistor between emitter and base. • Mini-type package, allowing downsizing of the equipment.

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP01110 Silicon PNP epitaxial planar type For digital circuits • Package M Di ain sc te on na tin nc ue e/ d ■ Features ■ Basic Part Number • UNR2110 x 2 Parameter

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP0111H Silicon PNP epitaxial planar type For digital circuits • Package M Di ain sc te on na tin nc ue e/ d ■ Features ■ Basic Part Number • UNR211H x 2 Parameter

UNR211W

Contextual Info: Transistors with built-in Resistor UNR211W Silicon PNP epitaxial planer type Unit: mm For digital circuit 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 0.65 • REB = 100 kΩ, without RB , built-in high-resistor between emitter and base. • Mini-type package, allowing downsizing of the equipment.

UN2114

Abstract: UN2214 UNR2114 UNR2214 XP04314 XP4314
Contextual Info: Composite Transistors XP04314 XP4314 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For switching/digital circuits 1 6 2 5 3 4 +0.05 UNR2214(UN2214) + UNR2114(UN2114) • Absolute Maximum Ratings Parameter

UNR211W

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR211W Silicon PNP epitaxial planar type Unit: mm For digital circuits 0.40+0.10 –0.05 0.16+0.10 –0.06 • Absolute Maximum Ratings Ta = 25°C Total power dissipation

UNR2112

Abstract: XP06112
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP06112 Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For digital circuits • Package ■ Features ■ Basic Part Number • UNR2112 x 2 Parameter

UNR211H

Abstract: XP0111H
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP0111H Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For digital circuits • Package ■ Features ■ Basic Part Number • UNR211H x 2 Parameter

UNR211H

Abstract: XN0111HG
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN0111HG Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For switching/digital circuits • Package ■ Features ■ Basic Part Number • UNR211H x 2

UNR2110

Abstract: UNR2111 UNR2112 UNR2113 UNR2114 UNR2115 UNR2116 UNR2117 UNR2118 UNR2119
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR211x Series (UN211x Series) Silicon PNP epitaxial planar type Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 5˚ ue pl d in an c se ed lud

UNR211H

Abstract: XP0111H
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP0111H Silicon PNP epitaxial planar type For digital circuits • Package ■ Features • UNR211H x 2 • Code SMini5-G1 • Pin Name 1: Base (Tr1) 2: Emitter 3: Base (Tr2)

UNR2119

Abstract: UNR2110 UNR2111 UNR2112 UNR2113 UNR2114 UNR2115 UNR2116 UNR2117 UNR2118
Contextual Info: Transistors with built-in Resistor UNR211x Series UN211x Series Silicon PNP epitaxial planar type Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Costs can be reduced through downsizing of the equipment and reduction of the number of parts

2SD0601A

Abstract: UNR211S XN04A88
Contextual Info: Composite Transistors XN04A88 Silicon NPN epitaxial planar type Tr1 Silicon PNP epitaxial planar type (Tr2) Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 3 2 1 0.30+0.10 –0.05 • Basic Part Number 0.50+0.10 –0.05 • 2SD0601A + UNR211S Overall 1.1+0.2

UNR211W

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR211W Silicon PNP epitaxial planar type Unit: mm For digital circuits 0.40+0.10 –0.05 0.16+0.10 –0.06 1.9±0.1 5˚ (0.65) 2 1 (0.95) (0.95) • Absolute Maximum Ratings Ta = 25°C

ft 103

Abstract: LD-5461BS 1414C BTA136 D1555 TLP434A UN2112 UN2212 UNR2112 UNR2212
Contextual Info: Composite Transistors XN04312 XN4312 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 3 2 1 0.30+0.10 –0.05 • Basic Part Number 0.50+0.10 –0.05 • UNR2212 (UN2212) + UNR2112 (UN2112)

K 460

Abstract: UN2116 UN2216 UNR2116 UNR2216 XN04316 XN4316
Contextual Info: Composite Transistors XN04316 XN4316 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 3 2 1 0.30+0.10 –0.05 • Basic Part Number 0.50+0.10 –0.05 • UNR2216 (UN2216) + UNR2116 (UN2116)

Contextual Info: Composite Transistors XP03389 Silicon NPN epitaxial planar transistor Tr1 Silicon PNP epitaxial planar transistor (Tr2) 0.20±0.05 5 5˚ 1 3 2 (0.65) (0.65) 1.3±0.1 2.0±0.1 • Basic Part Number of Element • UNR2211 (UN2211) + UNR2118 (UN2118) 0.9±0.1

UNR211H

Abstract: XN0111HG
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN0111HG Silicon PNP epitaxial planar type For switching/digital circuits • Package ■ Features • UNR211H x 2 • Code Mini5-G2 • Pin Name 1: Collector (Tr1) 2: Collector (Tr2)

ic 2114

Abstract: ic 2113 211d ic 2115 UNR2110 UNR2111 UNR2112 UNR2113 UNR2114 UNR2115
Contextual Info: Transistors with built-in Resistor / 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z / 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z Silicon PNP epitaxial planer transistor

UNR2116

Abstract: XP04116
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP04116 Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For digital circuits • Features ■ Basic Part Number • UNR2116 x 2 Parameter Collector-emitter voltage (Base open)

UNR2114

Abstract: XP01114
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP01114 Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For digital circuits • Features ■ Basic Part Number • UNR2114 x 2 Parameter Collector-emitter voltage (Base open)

UNR2110

Abstract: XP01110
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP01110 Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For digital circuits • Package ■ Features ■ Basic Part Number • UNR2110 x 2 Parameter

UNR2112

Abstract: XP06112
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP06112 Silicon PNP epitaxial planar type For digital circuits • Package ■ Features • UNR2112 x 2 • Code SMini6-G1 • Pin Name 1: Emitter (Tr1) 2:Emitter (Tr2) 3:Base (Tr2)