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    UNR1215 Search Results

    UNR1215 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    UNR1215 Panasonic Silicon NPN epitaxial planer transistor with biult-in resistor Original PDF
    UNR1215 Panasonic Silicon NPN epitaxial planer transistor Original PDF
    UNR1215Q Panasonic Silicon NPN Epitaxial Planar Type Transistor Original PDF
    UNR1215R Panasonic Silicon NPN Epitaxial Planar Type Transistor Original PDF
    UNR1215S Panasonic Silicon NPN Epitaxial Planar Type Transistor Original PDF

    UNR1215 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    UN1115

    Abstract: UN1215 UNR1115 UNR1215 XP04315 XP4315
    Text: Composite Transistors XP04315 XP4315 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For switching/digital circuits 1 6 2 5 3 4 +0.05 UNR1215(UN1215) + UNR1115(UN1115) • Absolute Maximum Ratings Parameter


    Original     		PDF XP04315 XP4315) UNR1215 UN1215) UNR1115 UN1115) UN1115 UN1215 XP04315 XP4315

    UN1215

    Abstract: UNR1215 XN01215 XN1215
    Text: Composite Transistors XN01215 XN1215 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 UNR1215(UN1215) x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element


    Original     		PDF XN01215 XN1215) UNR1215 UN1215) UN1215 XN01215 XN1215

    SC74A

    Abstract: UN1215 UNR1215 XN02215 XN2215
    Text: Composite Transistors XN02215 XN2215 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 UNR1215(UN1215) x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element


    Original     		PDF XN02215 XN2215) UNR1215 UN1215) SC74A UN1215 XN02215 XN2215

    UN1215

    Abstract: UNR1215 XP04215 XP4215
    Text: Composite Transistors XP04215 XP4215 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits 1 6 2 5 3 4 UNR1215(UN1215) x 2 elements • Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage


    Original     		PDF XP04215 XP4215) UNR1215 UN1215) UN1215 XP04215 XP4215

    UN1215

    Abstract: UNR1215 XP02215 XP2215
    Text: Composite Transistors XP02215 XP2215 Silicon NPN epitaxial planer transistor Unit: mm 0.2±0.05 For switching/digital circuits 2.1±0.1 1 2 1.25±0.1 0.425 5 3 4 +0.05 0.9± 0.1 UNR1215(UN1215) x 2 elements 0 to 0.1 ● 0.7±0.1 • Basic Part Number of Element


    Original     		PDF XP02215 XP2215) UNR1215 UN1215) UN1215 XP02215 XP2215

    UN1215

    Abstract: UNR1215 XP01215 XP1215
    Text: Composite Transistors XP01215 XP1215 Silicon NPN epitaxial planer transistor Unit: mm 0.2±0.05 For switching/digital circuits 2.1±0.1 1 2 1.25±0.1 0.425 5 3 4 +0.05 0.9± 0.1 UNR1215(UN1215) x 2 elements 0 to 0.1 ● 0.7±0.1 • Basic Part Number of Element


    Original     		PDF XP01215 XP1215) UNR1215 UN1215) UN1215 XP01215 XP1215

    UNR1215

    Abstract: XP06215 XP6215 UN1215
    Text: Composite Transistors XP06215 XP6215 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits 1 6 2 5 3 4 UNR1215(UN1215) x 2 elements • Absolute Maximum Ratings 1 : Emitter (Tr1) 2 : Emitter (Tr2) 3 : Base (Tr2) (Ta=25˚C) Parameter


    Original     		PDF XP06215 XP6215) UNR1215 UN1215) XP06215 XP6215 UN1215

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE

    UNR1218

    Abstract: UNR1219 UNR1215 UNR1216 UNR1217 UNR1211 UNR1212 UNR1213 UNR1214
    Text: Transistors with built-in Resistor / 121D/121E/121F/121K/121L / 121D/121E/121F/121K/121L Unit: mm 2.5±0.1 • Features (1.0) R 0.7 ● Costs can be reduced through downsizing of the equipment and


    Original     		PDF 121D/121E/121F/121K/121L 121D/121E/121F/121K/121L) UNR1218 UNR1219 UNR1215 UNR1216 UNR1217 UNR1211 UNR1212 UNR1213 UNR1214

    SC74A

    Abstract: UN1215 UNR1215 XN02215 XN2215 EIAJ-SC74A
    Text: Composite Transistors XN02215 XN2215 Silicon NPN epitaxial planer transistor Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) ● Two elements incorporated into one package. (Base-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.


    Original     		PDF XN02215 XN2215) UNR1215 UN1215) SC74A UN1215 XN02215 XN2215 EIAJ-SC74A

    Untitled

    Abstract: No abstract text available
    Text: Composite Transistors XN02215 XN2215 Silicon NPN epitaxial planer transistor Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 4 5 1.50+0.25 –0.05 3 Two elements incorporated into one package. (Base-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.


    Original     		PDF XN02215 XN2215) UNR1215 UN1215)

    UN1215

    Abstract: UNR1215 XN06215 XN6215
    Text: Composite Transistors XN06215 XN6215 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 –0.3 +0.25 • Absolute Maximum Ratings Parameter Collector to base voltage Rating Collector to emitter voltage of element Collector current


    Original     		PDF XN06215 XN6215) UN1215 UNR1215 XN06215 XN6215

    UN1215

    Abstract: UNR1215 XN04215 XN4215
    Text: Composite Transistors XN04215 XN4215 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 –0.3 +0.25 • Absolute Maximum Ratings Parameter Collector to base voltage Rating Collector to emitter voltage of element Collector current


    Original     		PDF XN04215 XN4215) UN1215 UNR1215 XN04215 XN4215

    UNR1210

    Abstract: UNR1211 UNR1212 UNR1213 UNR1214 UNR1215 UNR1216 UNR1217 UNR1218 UNR1219
    Text: Transistors with built-in Resistor UNR121x Series UN121x Series Silicon NPN epitaxial planar type Unit: mm For digital circuits 2.5±0.1 (1.0) R 0.9 R 0.7 0.55±0.1 (R1) 47 kΩ 10 kΩ 22 kΩ 47 kΩ 10 kΩ 10 kΩ 4.7 kΩ 22 kΩ 0.51 kΩ 1 kΩ 47 kΩ


    Original     		PDF UNR121x UN121x UN1210) UN1211) UN1212) UN1213) UN1214) UN1215) UN1216) UN1217) UNR1210 UNR1211 UNR1212 UNR1213 UNR1214 UNR1215 UNR1216 UNR1217 UNR1218 UNR1219

    121f

    Abstract: UNR1211 UNR1212 UNR1213 UNR1214 UNR1215 UNR1216 UNR1217 UNR1218 UNR1219
    Text: Transistors with built-in Resistor / 121D/121E/121F/121K/121L / 121D/121E/121F/121K/121L Unit: mm 2.5±0.1 • Features (1.0) R 0.7 ● Costs can be reduced through downsizing of the equipment and


    Original     		PDF 121D/121E/121F/121K/121L 121D/121E/121F/121K/121L) 121f UNR1211 UNR1212 UNR1213 UNR1214 UNR1215 UNR1216 UNR1217 UNR1218 UNR1219

    Untitled

    Abstract: No abstract text available
    Text: Transistors with built-in Resistor UNR121x Series UN121x Series Silicon NPN epitaxial planar type Unit: mm 2.5±0.1 (1.0) R 0.9 M Di ain sc te on na tin nc ue e/ d • Costs can be reduced through downsizing of the equipment and reduction of the number of parts


    Original     		PDF UNR121x UN121x UNR1210 UNR1211 UNR1212 UNR1213

    UN1115

    Abstract: UN1215 UNR1115 UNR1215 XN04315 XN4315
    Text: Composite Transistors XN04315 XN4315 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) ● 3 2 0.4±0.2 Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.


    Original     		PDF XN04315 XN4315) UNR1215 UN1215) UNR1115 UN1115) UN1115 UN1215 XN04315 XN4315

    UN1115

    Abstract: UN1215 UNR1115 UNR1215 XN04315 XN4315
    Text: Composite Transistors XN04315 XN4315 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For switching/digital circuits +0.2 2.8 –0.3 +0.25 3 Parameter (Ta=25˚C) Symbol Ratings Unit Collector to base voltage


    Original     		PDF XN04315 XN4315) UN1115 UN1215 UNR1115 UNR1215 XN04315 XN4315

    2SC5936

    Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
    Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF XP06501T XP06531 XP06545 XP0A554 XP0D873 XP0D874 XP0D875 2SC5936 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928

    SC74A

    Abstract: UN1215 UNR1215 XN02215 XN2215
    Text: Composite Transistors XN02215 XN2215 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) M Di ain sc te on na tin nc ue e/ d 0.16+0.10 –0.06 ● 4 5 2.8+0.2 –0.3 3 Two elements incorporated into one package.


    Original     		PDF XN02215 XN2215) SC74A UN1215 UNR1215 XN02215 XN2215

    UN1215

    Abstract: UNR1215 XN06215 XN6215
    Text: Composite Transistors XN06215 XN6215 Silicon NPN epitaxial planer transistor 3 2 0.4±0.2 Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 2.8+0.2 –0.3 1.50+0.25


    Original     		PDF XN06215 XN6215) UNR1215 UN1215) UN1215 XN06215 XN6215

    121F

    Abstract: UNR1211 UNR1212 UNR1213 UNR1214 UNR1215 UNR1216 UNR1217 UNR1218 UNR1219
    Text: Transistors with built-in Resistor / 121D/121E/121F/121K/121L / 121D/121E/121F/121K/121L Unit: mm 6.9±0.1 2.5±0.1 Costs can be reduced through downsizing of the equipment and


    Original     		PDF 121D/121E/121F/121K/121L 121D/121E/121F/121K/121L) UNR1211 UNR1212 UNR1213 UNR1214 UNR1215 UNR1216 UNR1217 UNR1218 121F UNR1211 UNR1212 UNR1213 UNR1214 UNR1215 UNR1216 UNR1217 UNR1218 UNR1219

    UN1215

    Abstract: UNR1215 XP02215 XP2215
    Text: Composite Transistors XP02215 XP2215 Silicon NPN epitaxial planer transistor (0.425) Unit: mm For switching/digital circuits 0.20±0.05 5 ● 0.2±0.1 Two elements incorporated into one package. (Base-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.


    Original     		PDF XP02215 XP2215) UNR1215 UN1215) UN1215 XP02215 XP2215

    XP06215

    Abstract: XP6215 UN1215 UNR1215
    Text: Composite Transistors XP06215 XP6215 Silicon NPN epitaxial planer transistor 0.2±0.05 5 6 ● 4 Features 0.2±0.1 Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.


    Original     		PDF XP06215 XP6215) UNR1215 UN1215) XP06215 XP6215 UN1215