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    UNR1211 Search Results

    UNR1211 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    UNR1211 Panasonic Silicon NPN epitaxial planer transistor with biult-in resistor Original PDF
    UNR1211 Panasonic Silicon NPN Epitaxial Planar Type Transistor Original PDF

    UNR1211 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    UNR1218

    Abstract: UNR1219 UNR1215 UNR1216 UNR1217 UNR1211 UNR1212 UNR1213 UNR1214
    Text: Transistors with built-in Resistor / 121D/121E/121F/121K/121L / 121D/121E/121F/121K/121L Unit: mm 2.5±0.1 • Features (1.0) R 0.7 ● Costs can be reduced through downsizing of the equipment and


    Original     		121D/121E/121F/121K/121L 121D/121E/121F/121K/121L) UNR1218 UNR1219 UNR1215 UNR1216 UNR1217 UNR1211 UNR1212 UNR1213 UNR1214 PDF

    121f

    Abstract: UNR1211 UNR1212 UNR1213 UNR1214 UNR1215 UNR1216 UNR1217 UNR1218 UNR1219
    Text: Transistors with built-in Resistor / 121D/121E/121F/121K/121L / 121D/121E/121F/121K/121L Unit: mm 2.5±0.1 • Features (1.0) R 0.7 ● Costs can be reduced through downsizing of the equipment and


    Original     		121D/121E/121F/121K/121L 121D/121E/121F/121K/121L) 121f UNR1211 UNR1212 UNR1213 UNR1214 UNR1215 UNR1216 UNR1217 UNR1218 UNR1219 PDF

    UN1211

    Abstract: UNR1211 XP04211 XP4211
    Text: Composite Transistors XP04211 XP4211 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits 1 6 2 5 3 4 UNR1211(UN1211) x 2 elements • Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage


    Original     		XP04211 XP4211) UNR1211 UN1211) UN1211 XP04211 XP4211 PDF

    UN1111

    Abstract: UN1211 UNR1111 UNR1211 XP03311
    Text: Composite Transistors XP03311 Silicon NPN epitaxial planer transistor Tr1 Silicon PNP epitaxial planer transistor (Tr2) 2.1±0.1 0.65 2.0±0.1 1 2 0.425 5 3 4 +0.05 0.9± 0.1 0 to 0.1 ● UNR1211(UN1211)+UNR1111(UN1111) • Absolute Maximum Ratings Parameter


    Original     		XP03311 UNR1211 UN1211) UNR1111 UN1111) UN1111 UN1211 XP03311 PDF

    UN1211

    Abstract: UNR1211 XP06211 XP6211
    Text: Composite Transistors XP06211 XP6211 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits 1 6 2 5 3 4 UNR1211(UN1211) x 2 elements • Absolute Maximum Ratings 1 : Emitter (Tr1) 2 : Emitter (Tr2) 3 : Base (Tr2) (Ta=25˚C) Parameter


    Original     		XP06211 XP6211) UNR1211 UN1211) UN1211 XP06211 XP6211 PDF

    UN1111

    Abstract: UN1211 UNR1111 UNR1211 XP04311 XP4311
    Text: Composite Transistors XP04311 XP4311 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For switching/digital circuits 1 6 2 5 3 4 UNR1211(UN1211) + UNR1111(UN1111) • Absolute Maximum Ratings Parameter


    Original     		XP04311 XP4311) UNR1211 UN1211) UNR1111 UN1111) UN1111 UN1211 XP04311 XP4311 PDF

    UN1211

    Abstract: UNR1211 XN01211 XN1211
    Text: Composite Transistors XN01211 XN1211 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 UNR1211(UN1211) x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element


    Original     		XN01211 XN1211) UNR1211 UN1211) UN1211 XN01211 XN1211 PDF

    UN1211

    Abstract: UNR1211 XP01211 XP1211
    Text: Composite Transistors XP01211 XP1211 Silicon NPN epitaxial planer transistor Unit: mm 0.2±0.05 For switching/digital circuits 2.1±0.1 1 2 1.25±0.1 0.425 5 3 4 +0.05 0.9± 0.1 UNR1211(UN1211) x 2 elements 0 to 0.1 ● 0.7±0.1 • Basic Part Number of Element


    Original     		XP01211 XP1211) UNR1211 UN1211) UN1211 XP01211 XP1211 PDF

    UN1211

    Abstract: UNR1211 XP02211 XP2211
    Text: Composite Transistors XP02211 XP2211 Silicon NPN epitaxial planer transistor Unit: mm 0.2±0.05 For switching/digital circuits 2.1±0.1 1 2 1.25±0.1 0.425 5 3 4 +0.05 0.9± 0.1 UNR1211(UN1211) x 2 elements 0 to 0.1 ● 0.7±0.1 • Basic Part Number of Element


    Original     		XP02211 XP2211) UNR1211 UN1211) UN1211 XP02211 XP2211 PDF

    XN1211

    Abstract: UN1211 UNR1211 XN01211
    Text: Composite Transistors XN01211 XN1211 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits 2.90+0.20 –0.05 1.9±0.1 0.16+0.10 –0.06 (0.95) (0.95) 2 1 10˚ 1.1+0.2 –0.1 • Basic Part Number of Element 0 to 0.1 UNR1211(UN1211) x 2 elements


    Original     		XN01211 XN1211) UNR1211 UN1211) XN1211 UN1211 XN01211 PDF

    UN1211

    Abstract: UNR1211 XN02211 XN2211
    Text: Composite Transistors XN02211 XN2211 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 UNR1211(UN1211) x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element


    Original     		XN02211 XN2211) UNR1211 UN1211) UN1211 XN02211 XN2211 PDF

    121F

    Abstract: UNR1211 UNR1212 UNR1213 UNR1214 UNR1215 UNR1216 UNR1217 UNR1218 UNR1219
    Text: Transistors with built-in Resistor / 121D/121E/121F/121K/121L / 121D/121E/121F/121K/121L Unit: mm 6.9±0.1 2.5±0.1 Costs can be reduced through downsizing of the equipment and


    Original     		121D/121E/121F/121K/121L 121D/121E/121F/121K/121L) UNR1211 UNR1212 UNR1213 UNR1214 UNR1215 UNR1216 UNR1217 UNR1218 121F UNR1211 UNR1212 UNR1213 UNR1214 UNR1215 UNR1216 UNR1217 UNR1218 UNR1219 PDF

    UN1211

    Abstract: UNR1211 XN02211 XN2211
    Text: Composite Transistors XN02211 XN2211 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits 2.90+0.20 –0.05 1.9±0.1 0.16+0.10 –0.06 (0.95) (0.95) 2 1 10˚ 1.1+0.2 –0.1 • Basic Part Number of Element 0 to 0.1 UNR1211(UN1211) x 2 elements


    Original     		XN02211 XN2211) UNR1211 UN1211) UN1211 XN02211 XN2211 PDF

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE PDF

    UNR1210

    Abstract: UNR1211 UNR1212 UNR1213 UNR1214 UNR1215 UNR1216 UNR1217 UNR1218 UNR1219
    Text: Transistors with built-in Resistor UNR121x Series UN121x Series Silicon NPN epitaxial planar type Unit: mm For digital circuits 2.5±0.1 (1.0) R 0.9 R 0.7 0.55±0.1 (R1) 47 kΩ 10 kΩ 22 kΩ 47 kΩ 10 kΩ 10 kΩ 4.7 kΩ 22 kΩ 0.51 kΩ 1 kΩ 47 kΩ


    Original     		UNR121x UN121x UN1210) UN1211) UN1212) UN1213) UN1214) UN1215) UN1216) UN1217) UNR1210 UNR1211 UNR1212 UNR1213 UNR1214 UNR1215 UNR1216 UNR1217 UNR1218 UNR1219 PDF

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS PDF

    UN1211

    Abstract: UNR1211 XP01211 XP1211
    Text: Composite Transistors XP01211 XP1211 Silicon NPN epitaxial planer transistor 0.20±0.05 5 ● 0.12+0.05 –0.02 4 5° Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.


    Original     		XP01211 XP1211) UNR1211 UN1211) UN1211 XP01211 XP1211 PDF

    UN1211

    Abstract: UNR1211 XN02211 XN2211
    Text: Composite Transistors XN02211 XN2211 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits 2.90+0.20 –0.05 1.9±0.1 0.16+0.10 –0.06 (0.95) (0.95) 3 4 5 1.50+0.25 –0.05 Two elements incorporated into one package. (Base-coupled transistors with built-in resistor)


    Original     		XN02211 XN2211) UNR1211 UN1211) UN1211 XN02211 XN2211 PDF

    UNR1154

    Abstract: UNR1211 UP03397
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP03397 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm +0.05 (0.30) 4 1 2 3 (0.50) (0.50) 1.00±0.05 (0.20) • Two elements incorporated into one package


    Original     		2002/95/EC) UP03397 UNR1154 UNR1211 UNR1154 UNR1211 UP03397 PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP03396 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm +0.05 (0.30) 4 1 2 3 (0.50) (0.50) 1.00±0.05 (0.20) • Two elements incorporated into one package


    Original     		2002/95/EC) UP03396 UNR111T UNR1211 PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors with built-in Resistor UNR121x Series UN121x Series Silicon NPN epitaxial planar type Unit: mm 2.5±0.1 (1.0) R 0.9 M Di ain sc te on na tin nc ue e/ d • Costs can be reduced through downsizing of the equipment and reduction of the number of parts


    Original     		UNR121x UN121x UNR1210 UNR1211 UNR1212 UNR1213 PDF

    UN1211

    Abstract: UNR1211 XN04211 XN4211
    Text: Composite Transistors XN04211 XN4211 Silicon NPN epitaxial planer transistor ● 3 2 0.4±0.2 Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 2.8+0.2 –0.3 6


    Original     		XN04211 XN4211) UNR1211 UN1211) UN1211 XN04211 XN4211 PDF

    STF12A80

    Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
    Text: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer


    Original     		02CZ10 02CZ11 02CZ12 02CZ13 02CZ15 02CZ16 02CZ18 02CZ2 02CZ20 STF12A80 BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP03396 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm +0.05 (0.30) 1 2 3 (0.50) (0.50) 1.00±0.05 (0.20) 5˚ di p Pl lan nclu ea


    Original     		2002/95/EC) UP03396 PDF