SF10A600H
Abstract: symbol of diode sf10a600
Text: SF10A600H Ultrafast Recovery Rectifier 600V, 10A ULTRAFAST RECOVERY RECTIFIERS Features High voltage and high reliability Ultrafast reverse recovery time High speed switching Low power loss and High efficiency Pin Configuration Pin 1: Cathode
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SF10A600H
O-220F-2L
SF10A600H
KSD-D0Q005-002
symbol of diode
sf10a600
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Untitled
Abstract: No abstract text available
Text: SF10A600H Ultrafast Recovery Rectifier 600V, 10A ULTRAFAST RECOVERY RECTIFIERS Features High voltage and high reliability Ultrafast reverse recovery time High speed switching Low power loss and High efficiency Pin Configuration Pin 1: Cathode
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SF10A600H
O-220F-2L
SF10A600H
KSD-D0Q005-002
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SF10A600HPI
Abstract: sf10a600 sF10A60 sf10a600h
Text: SF10A600HPI Ultrafast Recovery Rectifier 600V, 10A ULTRAFAST DUAL RECTIFIERS Features Low forward voltage drop and leakage current Ultrafast reverse recovery time trr<35ns Low power loss and high efficiency Dual common cathode rectifier construction
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SF10A600HPI
O-220F-3L
SF10A600HPI
KSD-D0O012-001
sf10a600
sF10A60
sf10a600h
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sf10a600
Abstract: sf10a600h SF10A600HPI
Text: SF10A600HPI Ultrafast Recovery Rectifier 600V, 10A ULTRAFAST DUAL RECTIFIERS Features Low forward voltage drop and leakage current Ultrafast reverse recovery time trr<30ns Low power loss and high efficiency Dual common cathode rectifier construction
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SF10A600HPI
O-220F-3L
SF10A600HPI
KSD-D0O012-002
sf10a600
sf10a600h
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F10H60S
Abstract: FFPF10H60S FFPF10H60STU
Text: FFPF10H60S Hyperfast 2 Rectifier tm Features 10A, 600V Hyperfast 2 Rectifier • High Speed Switching trr=25ns(Typ. @ IF=10A ) The FFPF10H60S is hyperfast2 rectifier (trr=25ns(Typ.) @ IF=10A). it has half the recovery time of ultrafast rectifier and is
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FFPF10H60S
FFPF10H60S
F10H60S
FFPF10H60STU
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Untitled
Abstract: No abstract text available
Text: FFPF10H60S Hyperfast 2 Rectifier tm Features 10A, 600V Hyperfast 2 Rectifier • High Speed Switching trr=25ns(Typ. @ IF=10A ) The FFPF10H60S is hyperfast2 rectifier (trr=25ns(Typ.) @ IF=10A). it has half the recovery time of ultrafast rectifier and is
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FFPF10H60S
FFPF10H60STU
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F20UP60DN
Abstract: FFPF20UP60DNTU FFPF20UP60DN ultrarf 100C80 F20UP60
Text: FFPF20UP60DN tm Features 20A, 600V Ultrafast Rectifier • High Speed Switching, trr < 70ns @ IF = 10A The FFPF20UP60DN is a ultrafast rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.
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FFPF20UP60DN
FFPF20UP60DN
F20UP60DN
FFPF20UP60DNTU
ultrarf
100C80
F20UP60
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F20UP60DN
Abstract: No abstract text available
Text: FFPF20UP60DN tm Features 20A, 600V Ultrafast Rectifier • High Speed Switching, rrt < 70ns @ IF = 10A • High Reverse Voltage and High Reliability The FFPF20UP60DN is a ultrafast rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.
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FFPF20UP60DN
FFPF20UP60DN
F20UP60DN
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F10H60S
Abstract: FFPF10H60S FFPF10H60STU
Text: FFPF10H60S Hyperfast Recovery Power Rectifier tm Features General Description • High Speed Switching trr=25ns(Typ. @ IF=10A ) The FFPF10H60S is hyperfast rectifier (trr=25ns(Typ.) @ IF=10A). it has half the recovery time of ultrafast rectifier and is
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FFPF10H60S
FFPF10H60S
F10H60S
FFPF10H60STU
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UD1006
Abstract: No abstract text available
Text: Ordering number : ENA1745A UD1006FR Planar Ultrafast Rectifier http://onsemi.com Low VF type, 10A, 600V, 1.3V, TO-220F-2FS Features • • VRRM=600V trr=60ns typ (IF=0.5A, IR=1A) • • VF=1.3V max (IF=10A) Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C
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ENA1745A
UD1006FR
O-220F-2FS
A1745-5/5
UD1006
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Untitled
Abstract: No abstract text available
Text: IRGR4610DPbF IRGS4610DPbF IRGB4610DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C VCES = 600V C C C IC = 10A, TC = 100°C G tsc > 5µs, Tjmax = 175°C E VCE on typ. = 1.7V @ 6A n-channel Applications • Appliance Drives • Inverters
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IRGR4610DPbF
IRGS4610DPbF
IRGB4610DPbF
JESD47F)
O-220
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Untitled
Abstract: No abstract text available
Text: PD - 96424 IRGS4064DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • IC = 10A, TC = 100°C Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C
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IRGS4064DPbF
EIA-418.
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GF1005C-GF1020C
Abstract: GF10 GF1005C-GF1060C
Text: GF1005C-GF1060C Super Fast Rectifiers Reverse Voltage: 50 - 600V Forward Current: 10A TO-220AB Low switching losses,high efficiency 1.4± 0.2 Low forward voltage drop Ultrafast recovery times Solder Dip 260°C ,10 seconds The plastic material carries U/L recognition 94V-0
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GF1005C-GF1060C
O-220AB
2002/95/EC
2002/96/EC
O-220AB,
GF1005C-GF1020C
GF1030C-GF1040C
GF1050C-GF1060C
GF10
GF1005C-GF1060C
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igbt 50V 420A
Abstract: irg7ic irg7i 105MH
Text: IRG7IC18FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V C IC = 7.5A, TC = 100°C tSC ≥ 3 s, TJ max = 150°C G VCE(on) typ. = 1.60V @ Ic = 10A G E • • • • Air Conditioner Compressor Refrigerator Vacuum Cleaner
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IRG7IC18FDPbF
O-220AB
igbt 50V 420A
irg7ic
irg7i
105MH
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Untitled
Abstract: No abstract text available
Text: PD- 91793 IRG4BC20SD Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Extremely low voltage drop 1.4Vtyp. @ 10A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4
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IRG4BC20SD
O-220AB
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IRG4BC20SD
Abstract: No abstract text available
Text: PD- 91793 IRG4BC20SD Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Extremely low voltage drop 1.4Vtyp. @ 10A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4
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IRG4BC20SD
O-220AB
IRG4BC20SD
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IRG4BC20SD
Abstract: No abstract text available
Text: PD- 91793 IRG4BC20SD Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Extremely low voltage drop 1.4Vtyp. @ 10A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4
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IRG4BC20SD
O-220AB
IRG4BC20SD
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MOSFET 40A 600V
Abstract: inverter circuit 200v to 100v mosfet 600V 10A ic
Text: PD - 94939A IRG4BC20SDPbF Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • Extremely low voltage drop 1.4Vtyp. @ 10A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4
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4939A
IRG4BC20SDPbF
O-220AB
MOSFET 40A 600V
inverter circuit 200v to 100v
mosfet 600V 10A ic
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FFPF10UA60ST
Abstract: FFPF10UA60S
Text: Ultra Fast II Rectifier FFPF10UA60ST tm Features 10A, 600V Ultra Fast II Rectifier • High Speed Switching, trr < 120ns The FFPF10UA60ST is ultrafast rectifier with low forward voltage drop and rugged UIS capability. This device is intended for use as freewheeling and clamping rectifiers in a variety of switching
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FFPF10UA60ST
120ns
FFPF10UA60ST
O-220F-2L
FFPF10UA60S
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Untitled
Abstract: No abstract text available
Text: PD - 94939A IRG4BC20SDPbF Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Extremely low voltage drop 1.4Vtyp. @ 10A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4
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4939A
IRG4BC20SDPbF
O-220AB
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Untitled
Abstract: No abstract text available
Text: IRG7IC18FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V C IC = 7.5A, TC = 100°C tSC ≥ 3 s, TJ max = 150°C G VCE(on) typ. = 1.60V @ Ic = 10A C E G E Applications • • • • TO-220AB Full-Pak n-channel Air Conditioner Compressor
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IRG7IC18FDPbF
O-220AB
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Untitled
Abstract: No abstract text available
Text: PD -95691A IRG4BC20SD-SPbF Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Extremely low voltage drop 1.4Vtyp. @ 10A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4
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-95691A
IRG4BC20SD-SPbF
EIA-418.
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AN-994
Abstract: IRG4BC20SD-S
Text: PD -91794 IRG4BC20SD-S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Extremely low voltage drop 1.4Vtyp. @ 10A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4
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IRG4BC20SD-S
AN-994
IRG4BC20SD-S
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AN-994
Abstract: IRG4BC20SD-S irg4bc
Text: PD -91794 IRG4BC20SD-S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Extremely low voltage drop 1.4Vtyp. @ 10A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4
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IRG4BC20SD-S
AN-994
IRG4BC20SD-S
irg4bc
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