igbt 50V 420A
Abstract: irg7ic irg7i 105MH
Text: IRG7IC18FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V C IC = 7.5A, TC = 100°C tSC ≥ 3 s, TJ max = 150°C G VCE(on) typ. = 1.60V @ Ic = 10A G E • • • • Air Conditioner Compressor Refrigerator Vacuum Cleaner
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IRG7IC18FDPbF
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igbt 50V 420A
irg7ic
irg7i
105MH
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irg7ic28u
Abstract: IRG7IC28 irg7ic 038341 IRG7IC28UPBF irg7i
Text: PD - 97562 IRG7IC28UPbF PDP TRENCH IGBT Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM l Low VCE on) and Energy per Pulse (E PULSE for improved panel efficiency l High repetitive peak current capability
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IRG7IC28UPbF
O-220AB
irg7ic28u
IRG7IC28
irg7ic
038341
IRG7IC28UPBF
irg7i
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irg7ic
Abstract: IRG7IC30FDPBF
Text: IRG7IC30FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • C Low VCE on Zero VCE(on) temperature coefficient 3µs Short Circuit Capability Square RBSOA VCES = 600V INOM = 24A Benefits VCE(on) typ. = 1.60V G
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IRG7IC30FDPbF
O-220AB
O-220AB
irg7ic
IRG7IC30FDPBF
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irg7i
Abstract: No abstract text available
Text: IRG7IC30FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • C Low VCE on Zero VCE(on) temperature coefficient 3µs Short Circuit Capability Square RBSOA VCES = 600V INOM = 24A Benefits VCE(on) typ. = 1.60V G
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IRG7IC30FDPbF
O-220AB
irg7i
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Untitled
Abstract: No abstract text available
Text: IRG7IC20FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V C IC = 8.0A, TC = 100°C tsc > 3 s, Tjmax = 150°C G VCE on typ. = 1.60V @ IC = 12A C E G E TO-220AB Full-Pak n-channel Applications • • • • Air Conditioner Compressor
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IRG7IC20FDPbF
O-220AB
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Untitled
Abstract: No abstract text available
Text: IRG7IC23FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V C IC = 9.0A, TC = 100°C tsc > 3 s, Tjmax = 150°C G VCE on typ. = 1.60V @ IC = 18A C G E TO-220AB Full-Pak n-channel Applications • • • • E Air Conditioner Compressor
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IRG7IC23FDPbF
O-220AB
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IRG7IC28U
Abstract: No abstract text available
Text: PD - 97562 IRG7IC28UPbF PDP TRENCH IGBT Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM l Low VCE on) and Energy per Pulse (E PULSE for improved panel efficiency l High repetitive peak current capability
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IRG7IC28UPbF
O-220AB
IRG7IC28U
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Untitled
Abstract: No abstract text available
Text: PD - 97758 IRG7IC30FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • C Low VCE on Zero VCE(on) temperature coefficient 3µs Short Circuit Capability Square RBSOA VCES = 600V INOM = 24A Benefits VCE(on) typ. = 1.60V
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IRG7IC30FDPbF
O-220AB
O-220AB
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irg7ic
Abstract: No abstract text available
Text: IRG7IC23FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V C IC = 9.0A, TC = 100°C tsc > 3 s, Tjmax = 150°C G VCE on typ. = 1.60V @ IC = 18A G E • • • • Air Conditioner Compressor Refrigerator Vacuum Cleaner
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IRG7IC23FDPbF
O-220AB
irg7ic
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Untitled
Abstract: No abstract text available
Text: IRG7IC18FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V C IC = 7.5A, TC = 100°C tSC ≥ 3 s, TJ max = 150°C G VCE(on) typ. = 1.60V @ Ic = 10A C E G E Applications • • • • TO-220AB Full-Pak n-channel Air Conditioner Compressor
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IRG7IC18FDPbF
O-220AB
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irg7ic
Abstract: transistor IC 12A 400v IRG7
Text: IRG7IC20FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V C IC = 8.0A, TC = 100°C tsc > 3 s, Tjmax = 150°C G VCE on typ. = 1.60V @ IC = 12A G E • • • • Air Conditioner Compressor Refrigerator Vacuum Cleaner
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IRG7IC20FDPbF
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irg7ic
transistor IC 12A 400v
IRG7
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