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    ULTRA FAST RECOVERY TIME DIODE 20NS Search Results

    ULTRA FAST RECOVERY TIME DIODE 20NS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    ULTRA FAST RECOVERY TIME DIODE 20NS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 1SS344 TOSHIBA Diode Silicon Epitaxial Schottky Planar Type 1SS344 Ultra High Speed Switching Application l Low forward voltage Unit: mm : VF 3 = 0.50V (typ.) l Fast reverse recovery time : trr = 20ns (typ.) l High average forward current : IO = 0.5A (max)


    Original     		PDF 1SS344 TD-236MOD SC-59 100mA 500mA

    1SS344

    Abstract: TD236
    Text: 1SS344 TOSHIBA Diode Silicon Epitaxial Schottky Planar Type 1SS344 Ultra High Speed Switching Application z Low forward voltage Unit: mm : VF 3 = 0.50V (typ.) z Fast reverse recovery time : trr = 20ns (typ.) z High average forward current : IO = 0.5A (max)


    Original     		PDF 1SS344 1SS344 TD236

    1SS344

    Abstract: No abstract text available
    Text: 1SS344 TOSHIBA Diode Silicon Epitaxial Schottky Planar Type 1SS344 Ultra High Speed Switching Application z Low forward voltage Unit: mm : VF 3 = 0.50V (typ.) z Fast reverse recovery time : trr = 20ns (typ.) z High average forward current : IO = 0.5A (max)


    Original     		PDF 1SS344 1SS344

    1SS344

    Abstract: TOSHIBA "ULTRA HIGH SPEED" DIODE
    Text: 1SS344 TOSHIBA Diode Silicon Epitaxial Schottky Planar Type 1SS344 Ultra High Speed Switching Application l Low forward voltage Unit: mm : VF 3 = 0.50V (typ.) l Fast reverse recovery time : trr = 20ns (typ.) l High average forward current : IO = 0.5A (max)


    Original     		PDF 1SS344 1SS344 TOSHIBA "ULTRA HIGH SPEED" DIODE

    1SS344

    Abstract: No abstract text available
    Text: 1SS344 TOSHIBA Diode Silicon Epitaxial Schottky Planar Type 1SS344 Ultra High Speed Switching Application Unit in mm Low forward voltage : VF 3 = 0.50V (typ.) Fast reverse recovery time : trr = 20ns (typ.) High average forward current : IO = 0.5A (max) Maximum Ratings (Ta = 25°C)


    Original     		PDF 1SS344 961001EAA2' 1SS344

    TOSHIBA "ULTRA HIGH SPEED" DIODE

    Abstract: 1SS344 TD236
    Text: 1SS344 TOSHIBA Diode Silicon Epitaxial Schottky Planar Type 1SS344 Ultra High Speed Switching Application Low forward voltage Unit: mm : VF 3 = 0.50V (typ.) Fast reverse recovery time : trr = 20ns (typ.) High average forward current : IO = 0.5A (max) Maximum Ratings (Ta = 25°C)


    Original     		PDF 1SS344 TOSHIBA "ULTRA HIGH SPEED" DIODE 1SS344 TD236

    Untitled

    Abstract: No abstract text available
    Text: ఎਈऔ૵਌! Switching Diode FHD16 Switching Diode ఎਈऔ૵਌ DESCRIPTION & FEATURES 概述及特點 Low forward voltage 低正向壓降 Fast reverse recovery time 快恢復時間 Ultra High Speed Switching Application 超高速開關應用 SOT-23


    Original     		PDF OT-23 FHD16 OT-23 062in, 024in, FHD16 75Vdc

    FHD4148

    Abstract: No abstract text available
    Text: ఎਈऔ૵਌! Switching Diode FHD4148 Switching Diode ఎਈऔ૵਌ DESCRIPTION & FEATURES 概述及特點 Low forward voltage 低正向壓降 Fast reverse recovery time 快恢復時間 Ultra High Speed Switching Application超高速開關應用 SOT-23


    Original     		PDF OT-23 FHD4148 OT-23 062in, 024in, FHD4148 75Vdc 25Vdc

    ultra fast recovery time diode 20ns

    Abstract: No abstract text available
    Text: ఎਈऔ૵਌! Switching Diode FHD99 Switching Diode ఎਈऔ૵਌ DESCRIPTION & FEATURES 概述及特點 Low forward voltage 低正向壓降 Fast reverse recovery time 快恢復時間 Ultra High Speed Switching Application超高速開關應用 SOT-23


    Original     		PDF OT-23 FHD99 OT-23 062in, 024in, FHD99 70Vdc ultra fast recovery time diode 20ns

    H9 MARKING CODE SOT23

    Abstract: H9 sot 23 MARKING H9 h9 marking h9 sot23
    Text: 1SS344 Surface Mount Schottky Planar Diode SOT-23 Features — Fast reverse recovery time:trr=20ns typ . — Low forward voltage:VF=0.50V (typ). — High average forward current:IO=0.5A(max.) Applications — Ultra high speed switching application. Dimensions in inches and (millimeters)


    Original     		PDF 1SS344 OT-23 1SS344 100mA 500mA 10mAIrr H9 MARKING CODE SOT23 H9 sot 23 MARKING H9 h9 marking h9 sot23

    fast recovery diode 20ns

    Abstract: 400v 3a ultra fast recovery diode ultra fast recovery time diode 20ns ultra fast diode 20ns Ultrafast Recovery diode 20ns
    Text: SF3A400H Ultrafast Recovery Rectifier ULTRA FAST RECOVERY POWER RECTIFIER Features  Low forward voltage drop 1  Ultrafast reverse recovery time : trr Typ. =20ns  High speed switching 1 2  Low power loss and High efficiency 2 Pin Configuration Pin 1: Cathode


    Original     		PDF SF3A400H O-252 OD-106 SF3A400H KSD-D6A013-001 fast recovery diode 20ns 400v 3a ultra fast recovery diode ultra fast recovery time diode 20ns ultra fast diode 20ns Ultrafast Recovery diode 20ns

    400v 3a ultra fast recovery diode

    Abstract: SF3A400H Ultrafast Recovery diode 20ns
    Text: SF3A400H Semiconductor Ultrafast Recovery Rectifier ULTRA FAST RECOVERY POWER RECTIFIER Features y Low forward voltage drop 1 y Ultrafast reverse recovery time : trr Typ. =20ns y High speed switching 1 2 y Low power loss and High efficiency 2 1 : Cathode 2 : Anode


    Original     		PDF SF3A400H O-252 OD-106 SF3A400H KSD-D6A013-000 400v 3a ultra fast recovery diode Ultrafast Recovery diode 20ns

    Untitled

    Abstract: No abstract text available
    Text: ULTRA FAST RECOVERY POWER RECTIFIER 1N5811DLCC3 • Ultra Fast Reverse Recovery • Hermetic Ceramic Surface Mount Package Designed as a Drop In Replacement for “D-5B” / “E-MELF” Package† • Switching power supplies applications • Space Level and High-Reliability Screening Options Available


    Original     		PDF 1N5811DLCC3 1N5811D3B-JQRS

    LE17

    Abstract: MIL-PRF19500 QR217
    Text: ULTRA FAST RECOVERY POWER RECTIFIER 1N5809D3A / 1N5809D3B • DLCC3 - Light Weight Hermetic Ceramic Surface Mount Package is designed as a drop In replacement for “D-5B” / “EMELF” package† • Ultra Fast Reverse Recovery • Switching Power Supply Applications


    Original     		PDF 1N5809D3A 1N5809D3B 1N5809D3B-JQRS LE17 MIL-PRF19500 QR217

    LE17

    Abstract: MIL-PRF19500 QR217 e-MELF
    Text: ULTRA FAST RECOVERY POWER RECTIFIER 1N5811D3A / 1N5811D3B • DLCC3 - Light Weight Hermetic Ceramic Surface Mount Package is designed as a drop In replacement for “D-5B” / “EMELF” package† • Ultra Fast Reverse Recovery • Switching Power Supply Applications


    Original     		PDF 1N5811D3A 1N5811D3B 1N5811D3B-JQRS LE17 MIL-PRF19500 QR217 e-MELF

    D-5B layout

    Abstract: LE17 MIL-PRF19500 QR217 marking D3B e-MELF
    Text: ULTRA FAST RECOVERY POWER RECTIFIER 1N5811D3A / 1N5811D3B • DLCC3 - Light Weight Hermetic Ceramic Surface Mount Package is designed as a drop In replacement for “D-5B” / “EMELF” package† • Ultra Fast Reverse Recovery • Switching Power Supply Applications


    Original     		PDF 1N5811D3A 1N5811D3B 1N5811D3B-JQRS D-5B layout LE17 MIL-PRF19500 QR217 marking D3B e-MELF

    sony flyback transformer

    Abstract: smps repair circuit ultrasonic transducers 48V sony flyback transformer datasheet fast recovery diode 600v 5A Ultrasonic Cleaning Transducer FCH10A15 sony flyback FAST RECOVERY DIODE 200ns 8A 40V FAST RECOVERY DIODE 200ns
    Text: TABLE of CONTENTS Diode — EMI and Efficiency————–—————————– Rectification Noise—————————————————— 3 series of SBD———————————————————— SBD and Thermal Runaway——————————————


    Original     		PDF

    1a6h

    Abstract: COLOR MARKING CODE ON DIODE SF1A600H
    Text: SF1A600H Ultrafast Recovery Rectifier ULTRA FAST RECOVERY POWER RECTIFIER Features  Low forward voltage drop 1  Ultrafast reverse recovery time : trr=30ns Max.  High speed switching 2  Low power loss and High efficiency 1 2 Pin Configuration


    Original     		PDF SF1A600H O-252 OD-106 SF1A600H KSD-D6A006-003 1a6h COLOR MARKING CODE ON DIODE

    3A6H

    Abstract: No abstract text available
    Text: SF3A600H Ultrafast Recovery Rectifier ULTRA FAST RECOVERY POWER RECTIFIER Features  Low forward voltage drop 1  Ultrafast reverse recovery time: trr=30ns Max.  High speed switching 2  Low power loss and High efficiency 1 2 Pin Configuration Pin 1: Cathode


    Original     		PDF SF3A600H O-252 OD-106 SF3A600H KSD-D6A010-001 3A6H

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 1SS344 TO SHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1SS344 ULTRA HIGH SPEED SW ITCHING APPLICATIO N. U nit in mm + 0.5 2 . 5 - 0 .3 • Low Forward Voltage : V p 3 = 0.50V (Typ.) • Fast Reverse Recovery Time : trr = 20ns (Typ.) •


    OCR Scan     		PDF 1SS344

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 1SS344 TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1SS344 ULTRA HIGH SPEED SWITCHING APPLICATION. U nit in mm + 0.5 2.5-0.3 • Low Forward Voltage : V p 3 = 0.50V (Typ.) • Fast Reverse Recovery Time : trr = 20ns (Typ.) • High Average Forward Current : I o = 0.5A (Max.)


    OCR Scan     		PDF 1SS344 961001EAA2'

    1SS344

    Abstract: No abstract text available
    Text: TOSHIBA 1SS344 TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1 SS344 ULTRA HIGH SPEED SWITCHING APPLICATION. U nit in mm + 0.5 2.5 -0.3 • Low Forward Voltage : Vp 3 = 0.50V (Typ.) • Fast Reverse Recovery Time : trr = 20ns (Typ.) • High Average Forward Current : I q = 0.5A (Max.)


    OCR Scan     		PDF 1SS344 961001EAA2' 1SS344

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 1SS344 TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1 Ç Ç 3 A 4 WÊÊF WÊÊF W ÊT • ■ ■ Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION. • • • + 0.5 2 . 5 - 0 .3 Low Forward Voltage : Vp 3 = 0.50V (Typ.) Fast Reverse Recovery Time : trr = 20ns (Typ.)


    OCR Scan     		PDF 1SS344 1500S344 61001EA

    jointal Z

    Abstract: 5n fast recovery diodes 30DL4 diode 30dl4 F10P20F circuit SCHEMATIC DIAGRAM SMPS 12v 5A diode RP 6040 31DF2 diode f5kq100 smps 8085
    Text: APPLICATION NOTE FRED U ltr a F a st R ec o v er y AND SCHOTTKY BARRIER D i ODE SBD APPLICATION NOTE TABLE OF CONTENTS Introduction. 27 1.Fast Recovery Diode . 27 2 .FRD and SBD .'. 28


    OCR Scan     		PDF JIS-C7021 40VDC jointal Z 5n fast recovery diodes 30DL4 diode 30dl4 F10P20F circuit SCHEMATIC DIAGRAM SMPS 12v 5A diode RP 6040 31DF2 diode f5kq100 smps 8085