S5 100 B112 MT RELAY
Abstract: CK 66 UL 94V-0 LCD sh 0357 94v-0 c225t F8212 panduit standoff RF based remote control robot circuit diagram of incubator D1148 burndy Y35 crimping tool manual
Text: ELECTRICAL SOLUTIONS A. System Overview Click on the logo above to go to www.panduit.com up to date product information find a local distributor technical information Section Index B1. Cable Ties A. System Overview B2. Cable Accessories B. Bundle B3. Stainless
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SA-NCCB51
S5 100 B112 MT RELAY
CK 66 UL 94V-0 LCD
sh 0357 94v-0
c225t
F8212
panduit standoff
RF based remote control robot
circuit diagram of incubator
D1148
burndy Y35 crimping tool manual
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TD236
Abstract: 1SS336
Text: 1SS336 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS336 Ultra High Speed Switching Application Unit: mm Small package : SC-59 Low forward voltage : VF 3 = 0.84V (typ.) Fast reverse recovery time : trr = 7ns (typ.) Small total capacitance : CT = 7pF (typ.)
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1SS336
SC-59
TD-236MOD
TD236
1SS336
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1SS336
Abstract: No abstract text available
Text: 1SS336 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS336 Ultra High Speed Switching Application Unit: mm l Small package : SC-59 l Low forward voltage : VF 3 = 0.84V (typ.) l Fast reverse recovery time : trr = 7ns (typ.) l Small total capacitance : CT = 7pF (typ.)
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1SS336
SC-59
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1SS336
Abstract: td236
Text: 1SS336 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS336 Ultra High Speed Switching Application Unit: mm z Small package : SC-59 z Low forward voltage : VF 3 = 0.84V (typ.) z Fast reverse recovery time : trr = 7ns (typ.) z Small total capacitance : CT = 7pF (typ.)
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1SS336
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td236
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1SS337
Abstract: No abstract text available
Text: 1SS337 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS337 Ultra High Speed Switching Application Unit: mm z Small package : SC-59 z Low forward voltage : VF 3 = 0.88V (typ.) z Fast reverse recovery time : trr = 6ns (typ.) z Small total capacitance : CT = 1.6pF (typ.)
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1SS337
SC-59
1SS337
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nec k 813
Abstract: s11 diode shottky IEI1207 NE33284A NE33284A-SL NE33284A-T1 NE33284A-T1A NE33284AS
Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE33284A L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm The NE33284A is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent
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NE33284A
NE33284A
NE33284A-SL
NE33284A-T1
NE33284A-T1A
nec k 813
s11 diode shottky
IEI1207
NE33284A-SL
NE33284A-T1
NE33284A-T1A
NE33284AS
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1SS348
Abstract: No abstract text available
Text: 1SS348 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS348 Low Voltage High Speed Switching Unit: mm l Low forward voltage : VF 3 = 0.56V (typ.) l Low reverse current : IR = 5µA (max) l Small package : SC-59 Maximum Ratings (Ta = 25°C) Characteristic
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Untitled
Abstract: No abstract text available
Text: 1SS348 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS348 Low Voltage High Speed Switching Unit: mm l Low forward voltage : VF 3 = 0.56V (typ.) l Low reverse current : IR = 5µA (max) l Small package : SC-59 Maximum Ratings (Ta = 25°C) Characteristic
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1SS348
SC-59
TD-236MOD
100mA
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1SS344
Abstract: No abstract text available
Text: 1SS344 TOSHIBA Diode Silicon Epitaxial Schottky Planar Type 1SS344 Ultra High Speed Switching Application Unit in mm Low forward voltage : VF 3 = 0.50V (typ.) Fast reverse recovery time : trr = 20ns (typ.) High average forward current : IO = 0.5A (max) Maximum Ratings (Ta = 25°C)
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1SS344
961001EAA2'
1SS344
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1SS337
Abstract: 88 diode toshiba
Text: 1SS337 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS337 Ultra High Speed Switching Application Unit: mm Small package : SC-59 Low forward voltage : VF 3 = 0.88V (typ.) Fast reverse recovery time : trr = 6ns (typ.) Small total capacitance : CT = 1.6pF (typ.)
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1SS337
SC-59
TD-236MODtransportation
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88 diode toshiba
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E112 jfet
Abstract: siliconix E412 NPD5564 jfet e300 NPD5566 DATA SHEET OF FET BFW10 E402 dual jfet E430 jfet E310 JFET N NPD5565
Text: Selection Guide and Cross Reference Linear Integrated Systems SMALL SIGNAL DISCRETE SEMICONDUCTORS JFETs DMOS Switches BJTs MOSFETs Linear Integrated Systems 4042 Clipper Court • Fremont, CA 94538 • www.linearsystems.com Tel: 510 490-9160 • Toll Free: 800 359-4023 • Fax: 510 353-0261
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LS422
LS423
LS424
LS425
LS426
LS832
LS833
LS4391
LS5911
E112 jfet
siliconix E412
NPD5564
jfet e300
NPD5566
DATA SHEET OF FET BFW10
E402 dual jfet
E430 jfet
E310 JFET N
NPD5565
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TD236
Abstract: 1SS348
Text: 1SS348 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS348 Low Voltage High Speed Switching Unit: mm Low forward voltage : VF 3 = 0.56V (typ.) Low reverse current : IR = 5µA (max) Small package : SC-59 Maximum Ratings (Ta = 25°C) Characteristic
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1SS348
SC-59
TD-236MOD
TD236
1SS348
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Untitled
Abstract: No abstract text available
Text: 1SS337 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS337 Ultra High Speed Switching Application Unit in mm Small package : SC-59 Low forward voltage : VF 3 = 0.88V (typ.) Fast reverse recovery time : trr = 6ns (typ.) Small total capacitance : CT = 1.6pF (typ.)
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1SS337
SC-59
961001EAA2'
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Untitled
Abstract: No abstract text available
Text: 1SS344 TOSHIBA Diode Silicon Epitaxial Schottky Planar Type 1SS344 Ultra High Speed Switching Application l Low forward voltage Unit: mm : VF 3 = 0.50V (typ.) l Fast reverse recovery time : trr = 20ns (typ.) l High average forward current : IO = 0.5A (max)
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1SS344
TD-236MOD
SC-59
100mA
500mA
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1SS344
Abstract: TD236
Text: 1SS344 TOSHIBA Diode Silicon Epitaxial Schottky Planar Type 1SS344 Ultra High Speed Switching Application z Low forward voltage Unit: mm : VF 3 = 0.50V (typ.) z Fast reverse recovery time : trr = 20ns (typ.) z High average forward current : IO = 0.5A (max)
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1SS344
1SS344
TD236
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1SS348
Abstract: TD236
Text: 1SS348 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS348 Low Voltage High Speed Switching Unit: mm z Low forward voltage : VF 3 = 0.56V (typ.) z Low reverse current : IR = 5 A (max) z Small package : SC-59 Absolute Maximum Ratings (Ta = 25°C)
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1SS348
SC-59
TD-236MOD
1SS348
TD236
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1SS348
Abstract: No abstract text available
Text: 1SS348 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS348 Low Voltage High Speed Switching Unit: mm z Low forward voltage : VF 3 = 0.56V (typ.) z Low reverse current : IR = 5 A (max) z Small package : SC-59 Absolute Maximum Ratings (Ta = 25°C)
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1SS348
SC-59
TD-236MOD
1SS348
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1SS344
Abstract: No abstract text available
Text: 1SS344 TOSHIBA Diode Silicon Epitaxial Schottky Planar Type 1SS344 Ultra High Speed Switching Application z Low forward voltage Unit: mm : VF 3 = 0.50V (typ.) z Fast reverse recovery time : trr = 20ns (typ.) z High average forward current : IO = 0.5A (max)
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1SS344
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1SS344
Abstract: TOSHIBA "ULTRA HIGH SPEED" DIODE
Text: 1SS344 TOSHIBA Diode Silicon Epitaxial Schottky Planar Type 1SS344 Ultra High Speed Switching Application l Low forward voltage Unit: mm : VF 3 = 0.50V (typ.) l Fast reverse recovery time : trr = 20ns (typ.) l High average forward current : IO = 0.5A (max)
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1SS344
1SS344
TOSHIBA "ULTRA HIGH SPEED" DIODE
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1SS337
Abstract: No abstract text available
Text: 1SS337 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS337 Ultra High Speed Switching Application Unit: mm l Small package : SC-59 l Low forward voltage : VF 3 = 0.88V (typ.) l Fast reverse recovery time : trr = 6ns (typ.) l Small total capacitance : CT = 1.6pF (typ.)
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1SS337
SC-59
1SS337
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TD236
Abstract: No abstract text available
Text: NOTES: 1, D&E DD NOT INCLUDE MOLD FLASH, 2, MOLD FLASH DR PROTRUSIONS NEIT TD EXCEED ,15mm .006" , 3, CONTROLLING DIMENSION: MILLIMETERS, 4, MEETS JED EC TD236, INCHES MIN 0,031 0,001 0,014 MAX 0,047 0,005 0,022 MIN 0,787 0,025 0,356 MAX 1,194 0,127 0,559
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TD236,
TD236
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s-mini
Abstract: SMini
Text: S -M IN I-2 -3 F 1 A U n iti nn I ft JEDECII'K E I A J □~ K mm$ ftâ Ic S—MINI TD-236MDD SC-59 2-3F1A - A u g .2000
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TD-236MDD
SC-59
2000S-MINI-2-3F1A
s-mini
SMini
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aeg diode Si 61 L
Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books
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11tA0A12
A025A
A0290
U0U55
A0291
A0292
A0305
A0306
A0A56
A0A59
aeg diode Si 61 L
aeg diodes D6
SGS Transistors
BC23B
SILICONIX U315
MZ306
BY126
bcv59
ac128
2N3680
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Zener sot marking 162
Abstract: marking 8D SOT 89 marking 81t marking 81J
Text: ZENER DIODES 300mW MMBZ5225 THRU MMBZS267 CASE TYPE: TD-236AB (SOT-23) % Nominal Zener voltage)3) at Maximum Zener Zenar impedance*1* Test curant Iz t Type Marking VzV Izr mA MMBZ5225 MMBZ5226 MMBZ5227 18E 8A 8B 3.0 MMBZ5228 MMBZ5229 MMBZ5230 MMBZ5231 MMBZ5232
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300mW)
MMBZ5225
MMBZS267
TD-236AB
OT-23)
Zener sot marking 162
marking 8D SOT 89
marking 81t
marking 81J
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