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    Toshiba America Electronic Components 1SS344

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    Bristol Electronics 1SS344 275
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    Toshiba America Electronic Components 1SS344(TE85L)

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    Toshiba America Electronic Components 1SS344(TE85L,F)

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    Toshiba America Electronic Components 1SS344(TE85R,F)

    1SS344 - Small-signal Schottky barrier diode
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    Rochester Electronics 1SS344(TE85R,F) 3,000 1
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    1SS344 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Type PDF
    1SS344 Kexin Ultra High Speed Switching Application Original PDF
    1SS344 Toshiba Diode - Silicon Epitaxial Schottky Planar Type Original PDF
    1SS344 TY Semiconductor Ultra High Speed Switching Application - SOT-23 Original PDF
    1SS344 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1SS344 Toshiba DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION) Scan PDF
    1SS344 Toshiba DIODE Scan PDF

    1SS344 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Product specification 1SS344 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 Fast reverse recovery time: trr = 20ns Typ . 0.55 Low forward voltage: VF(3) = 0.50V(Typ). 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 0-0.1 +0.1


    Original     		PDF 1SS344 OT-23

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes SOT-23 1SS344 SCHOTTKY BARRIER DIODE FEATURES  Low Forward Voltage  Fast Reverse Recovery Time  High Forward Current APPLICATIONS  High Speed Switching MARKING: H9


    Original     		PDF OT-23 OT-23 1SS344

    1SS344

    Abstract: No abstract text available
    Text: 1SS344 TOSHIBA Diode Silicon Epitaxial Schottky Planar Type 1SS344 Ultra High Speed Switching Application Unit in mm Low forward voltage : VF 3 = 0.50V (typ.) Fast reverse recovery time : trr = 20ns (typ.) High average forward current : IO = 0.5A (max) Maximum Ratings (Ta = 25°C)


    Original     		PDF 1SS344 961001EAA2' 1SS344

    H9 MARKING CODE SOT23

    Abstract: H9 sot 23 MARKING H9 h9 marking h9 sot23
    Text: 1SS344 Surface Mount Schottky Planar Diode SOT-23 Features — Fast reverse recovery time:trr=20ns typ . — Low forward voltage:VF=0.50V (typ). — High average forward current:IO=0.5A(max.) Applications — Ultra high speed switching application. Dimensions in inches and (millimeters)


    Original     		PDF 1SS344 OT-23 1SS344 100mA 500mA 10mAIrr H9 MARKING CODE SOT23 H9 sot 23 MARKING H9 h9 marking h9 sot23

    smd transistor h9

    Abstract: smd diode h9 H9 sot 23 MARKING H9 transistor h9 Rm25 1SS344 h9 MARKING
    Text: Diodes SMD Type ULTRA HIGH SPEED SWITCHING APPLICATION 1SS344 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 Fast reverse recovery time: trr = 20ns Typ . 0.55 Low forward voltage: VF(3) = 0.50V(Typ). 2 +0.1 0.95-0.1 +0.1


    Original     		PDF 1SS344 OT-23 smd transistor h9 smd diode h9 H9 sot 23 MARKING H9 transistor h9 Rm25 1SS344 h9 MARKING

    Untitled

    Abstract: No abstract text available
    Text: 1SS344 TOSHIBA Diode Silicon Epitaxial Schottky Planar Type 1SS344 Ultra High Speed Switching Application l Low forward voltage Unit: mm : VF 3 = 0.50V (typ.) l Fast reverse recovery time : trr = 20ns (typ.) l High average forward current : IO = 0.5A (max)


    Original     		PDF 1SS344 TD-236MOD SC-59 100mA 500mA

    1SS344

    Abstract: TD236
    Text: 1SS344 TOSHIBA Diode Silicon Epitaxial Schottky Planar Type 1SS344 Ultra High Speed Switching Application z Low forward voltage Unit: mm : VF 3 = 0.50V (typ.) z Fast reverse recovery time : trr = 20ns (typ.) z High average forward current : IO = 0.5A (max)


    Original     		PDF 1SS344 1SS344 TD236

    1SS344

    Abstract: No abstract text available
    Text: 1SS344 TOSHIBA Diode Silicon Epitaxial Schottky Planar Type 1SS344 Ultra High Speed Switching Application z Low forward voltage Unit: mm : VF 3 = 0.50V (typ.) z Fast reverse recovery time : trr = 20ns (typ.) z High average forward current : IO = 0.5A (max)


    Original     		PDF 1SS344 1SS344

    1SS344

    Abstract: TOSHIBA "ULTRA HIGH SPEED" DIODE
    Text: 1SS344 TOSHIBA Diode Silicon Epitaxial Schottky Planar Type 1SS344 Ultra High Speed Switching Application l Low forward voltage Unit: mm : VF 3 = 0.50V (typ.) l Fast reverse recovery time : trr = 20ns (typ.) l High average forward current : IO = 0.5A (max)


    Original     		PDF 1SS344 1SS344 TOSHIBA "ULTRA HIGH SPEED" DIODE

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes SOT-23 1SS344 SCHOTTKY BARRIER DIODE FEATURES  Low Forward Voltage  Fast Reverse Recovery Time  High Forward Current APPLICATIONS  High Speed Switching MARKING: H9


    Original     		PDF OT-23 OT-23 1SS344 100mA 500mA

    Untitled

    Abstract: No abstract text available
    Text: 1SS344 SURFACE MOUNT SCHOTTKY BARRIER DIODE WON-TOP ELECTRONICS Pb Features  Low Forward Voltage   Fast Switching Speed PN Junction Guard Ring for Transient and ESD Protection For General Purpose Switching Applications Plastic Material – UL Recognition Flammability


    Original     		PDF 1SS344 OT-23, MIL-STD-202,

    TOSHIBA "ULTRA HIGH SPEED" DIODE

    Abstract: 1SS344 TD236
    Text: 1SS344 TOSHIBA Diode Silicon Epitaxial Schottky Planar Type 1SS344 Ultra High Speed Switching Application Low forward voltage Unit: mm : VF 3 = 0.50V (typ.) Fast reverse recovery time : trr = 20ns (typ.) High average forward current : IO = 0.5A (max) Maximum Ratings (Ta = 25°C)


    Original     		PDF 1SS344 TOSHIBA "ULTRA HIGH SPEED" DIODE 1SS344 TD236

    SCJ0004N

    Abstract: JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT
    Text: 東芝半導体製品総覧表 2009 年 7 月版 ダイオード 整流ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツエナーダイオード スイッチングダイオード ショットキーバリアダイオード


    Original     		PDF SCJ0004N TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG07 CMG02 CRG01 SCJ0004N JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT

    lm2804

    Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
    Text: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.


    Original     		PDF BCE0030C S-167 BCE0030D lm2804 marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983

    DIODE marking S4 59A

    Abstract: DIODE 1N4148 LL-34 Zener Diode SOD-323 marking code a2 marking v6 zener diode fairchild marking codes sot-23 RKZ18B2KG TWPEC 1w402 MTZJ SERIES ZENER DIODES 702 SOT-23 marking KJ marking 513 SOD-323
    Text: 2008.07 Renesas Diodes Status List Topic_Ultra-Small Zener Diodes " RKZ-KP Series " - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3


    Original     		PDF REJ16G0002-2200 DIODE marking S4 59A DIODE 1N4148 LL-34 Zener Diode SOD-323 marking code a2 marking v6 zener diode fairchild marking codes sot-23 RKZ18B2KG TWPEC 1w402 MTZJ SERIES ZENER DIODES 702 SOT-23 marking KJ marking 513 SOD-323

    marking code 62z

    Abstract: philips surface mount zener diode v6 marking 68m sot 23-5 1S2473 equivalent DIODE ROHM 3pin Marking A7 IPS302 marking 62z SOT23 diode S4 68a 1ss81 diode equivalent 1S2473 DIODE equivalent
    Text: 2001.05 Summary Application Example ANT The HVD141/142 features very small capacitance and on- resistance. These superior characteristics can provide isolation for the transmitting and receiving antenna switch sections and improve the insertion loss. TX RX


    Original     		PDF HVD141/142 HZU16 HZU10 HZU18 HZU11 HZU20 HZU12 HZU22 HZU13 HZU24 marking code 62z philips surface mount zener diode v6 marking 68m sot 23-5 1S2473 equivalent DIODE ROHM 3pin Marking A7 IPS302 marking 62z SOT23 diode S4 68a 1ss81 diode equivalent 1S2473 DIODE equivalent

    smd code book

    Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
    Text: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ


    Original     		PDF OD-80 OD123/323 OT-23, OT346 OT-323, OT-416 OT-223, OT-89 OT-143, OT-363 smd code book transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 1SS344 TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1SS344 ULTRA HIGH SPEED SWITCHING APPLICATION. U nit in mm + 0.5 2.5-0.3 • Low Forward Voltage : V p 3 = 0.50V (Typ.) • Fast Reverse Recovery Time : trr = 20ns (Typ.) • High Average Forward Current : I o = 0.5A (Max.)


    OCR Scan     		PDF 1SS344 961001EAA2'

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 1SS344 TO SHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1SS344 ULTRA HIGH SPEED SW ITCHING APPLICATIO N. U nit in mm + 0.5 2 . 5 - 0 .3 • Low Forward Voltage : V p 3 = 0.50V (Typ.) • Fast Reverse Recovery Time : trr = 20ns (Typ.) •


    OCR Scan     		PDF 1SS344

    1SS344

    Abstract: No abstract text available
    Text: TOSHIBA 1SS344 TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1 SS344 ULTRA HIGH SPEED SWITCHING APPLICATION. U nit in mm + 0.5 2.5 -0.3 • Low Forward Voltage : Vp 3 = 0.50V (Typ.) • Fast Reverse Recovery Time : trr = 20ns (Typ.) • High Average Forward Current : I q = 0.5A (Max.)


    OCR Scan     		PDF 1SS344 961001EAA2' 1SS344

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 1SS344 TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1 Ç Ç 3 A 4 WÊÊF WÊÊF W ÊT • ■ ■ Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION. • • • + 0.5 2 . 5 - 0 .3 Low Forward Voltage : Vp 3 = 0.50V (Typ.) Fast Reverse Recovery Time : trr = 20ns (Typ.)


    OCR Scan     		PDF 1SS344 1500S344 61001EA

    1SS344

    Abstract: No abstract text available
    Text: 1SS344 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE ULTRA HIGH SPEED SWITCHING APPLICATION. Unit in mm . Low Forward Voltage Vp= 0 .50V Typ. . Fast Reverse Recovery Time trr=20ns(Typ.) . High Average Forward Current IO=0.5A(Max.) +0.5 2.5 -0 .3 + 0.25 1.5-0.1 5,


    OCR Scan     		PDF 1SS344 100mA 500mA 1SS344

    1S1585

    Abstract: 1SS239 1S1585 equivalent 1SV147 1ss193 equivalent 1SS SOT mark 1SS337 J9 1SV99 1SV103 1SS241
    Text: Super-Mini Diodes SOT-23MOD, SOT-143MOD. F6 Mark Equivalent other package Type No. A3 1S1585 Anode common Cathode comon Electrical Characteristics (Ta=25°C) Type No. Application V r(V) IO(mA) trr (ns) Connection JX. Remarks 1SS181 High-speed switching 80


    OCR Scan     		PDF OT-23MOD, OT-143MOD. 1S1585 107YP 1SS239 1S1585 equivalent 1SV147 1ss193 equivalent 1SS SOT mark 1SS337 J9 1SV99 1SV103 1SS241

    2N3904 331 transistor

    Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
    Text: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272


    OCR Scan     		PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4401 2N4402 2N3904 331 transistor C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737