Untitled
Abstract: No abstract text available
Text: SDG8204 SamHop Microelectronics Corp. May, 2004 ver1.1 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY VDSS 20V ID RDS ON Super high dense cell design for low RDS(ON). ( m Ω ) Max Rugged and reliable. 30 @ VGS = 4.0V 5A Surface Mount Package.
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SDG8204
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55N02
Abstract: No abstract text available
Text: S DP /B 55N02 S amHop Microelectronics C orp. May,2004 ver1.1 N-Channel E nhancement Mode Field E ffect Transistor 4 P R ODUC T S UMMAR Y V DS S F E AT UR E S R DS on ( m W ) ID Max S uper high dense cell design for extremely low R DS (ON). High power and current handling capability.
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55N02
O-220
O-263
55N02
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8207
Abstract: No abstract text available
Text: S T G 8207 S amHop Microelectronics C orp. Dec 27, 2004 ver1.2 Dual N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S 20V ID R DS ON S uper high dense cell design for low R DS (ON ). ( m Ω ) Max R ugged and reliable.
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85N03
Abstract: 85N03L
Text: S DP /B 85N03L S amHop Microelectronics C orp. May,2004 ver1.1 N-Channel Logic Level E nhancement Mode Field E ffect Transistor 4 P R ODUC T S UMMAR Y V DS S ID R DS on F E AT UR E S ( m W ) Max High power and current handling capability. 5 @ V G S = 10V
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85N03L
O-220
O-263
85N03
85N03L
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Untitled
Abstract: No abstract text available
Text: S T U/D20N03L S amHop Microelectronics C orp. J uly 23 ,2004 V er1.1 N-C hannel Logic Level E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON ( mW) S uper high dense cell design for low R DS (ON ). Max R ugged and reliable.
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U/D20N03L
O-252
O-251
O-252AA
O-252
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SDM9926
Abstract: No abstract text available
Text: SDM9926 SamHop Microelectronics Corp. May. 2004 ver 1.1 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY VDSS ID RDS ON Super high dense cell design for low RDS(ON). ( m W ) Max Rugged and reliable. 30 @ VGS = 4.0V 20V 5A Surface Mount Package.
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SDM9926
DM9926
SDM9926
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Untitled
Abstract: No abstract text available
Text: STU/D3055L2-60 SamHop Microelectronics Corp. July 23, 2004 v1.1 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY VDSS ID RDS ON Super high dense cell design for low RDS(ON). ( m Ω) Max Rugged and reliable. 65 @ VGS = 4.5V 20V TO-252 and TO-251 Package.
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STU/D3055L2-60
O-252
O-251
O-252AA
300ms
U/D3055L2-60
O-252
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PDF
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DD 127 D TRANSISTOR
Abstract: No abstract text available
Text: STU/D9916L SamHop Microelectronics Corp. Preliminary Mar.25 2004 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY VDSS ID RDS ON Super high dense cell design for low RDS(ON). ( m Ω) Max Rugged and reliable. 30@ VGS = 10V 30V TO-252 and TO-251 Package.
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STU/D9916L
O-252
O-251
O-252AA
U/D9916L
Tube/TO-252
O-252
DD 127 D TRANSISTOR
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60n03l
Abstract: 60N03
Text: S DP /B 60N03L S amHop Microelectronics C orp. May,2004 ver1.1 N-Channel Logic Level E nhancement Mode Field E ffect Transistor 4 P R ODUC T S UMMAR Y V DS S F E AT UR E S R DS on ( m W ) Max ID High power and current handling capability. 11 @ V G S = 10V
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60N03L
O-220
O-263
60n03l
60N03
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Untitled
Abstract: No abstract text available
Text: STU/D3055L2 SamHop Microelectronics Corp. Jul.16 2004 ver1.1 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY VDSS ID RDS ON (mW) Super high dense cell design for low RDS(ON). Max Rugged and reliable. 40 @ VGS = 4.5V
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STU/D3055L2
O-252
O-251
O-252AA
U/D3055L2
O-252
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PDF
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Untitled
Abstract: No abstract text available
Text: STU/D3055L2-60 SamHop Microelectronics Corp. July 23, 2004 v1.1 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY VDSS ID RDS ON Super high dense cell design for low RDS(ON). ( m Ω) Max Rugged and reliable. 65 @ VGS = 4.5V 20V TO-252 and TO-251 Package.
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Original
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STU/D3055L2-60
O-252
O-251
O-252AA
300ms
U/D3055L2-60
Tube/TO-252
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PDF
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Untitled
Abstract: No abstract text available
Text: SDU/D20N03L SamHop Microelectronics Corp. July 2004 ver1.2 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY VDSS ID RDS ON (mW) Super high dense cell design for low RDS(ON). Max Rugged and reliable. 15 @ VGS = 10V 30V
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SDU/D20N03L
O-252
O-251
O-252AA
DU/D20N03L
Tube/TO-252
O-252
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PDF
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d3055
Abstract: No abstract text available
Text: STU/D3055L2-60 SamHop Microelectronics Corp. Nov 26 , 2004 Ver1.2 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY VDSS ID RDS ON Super high dense cell design for low RDS(ON). ( m Ω) Max Rugged and reliable. 65 @ VGS = 4.5V 20V
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Original
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STU/D3055L2-60
O-252
O-251
O-252AA
300ms
U/D3055L2-60
Tube/TO-252
d3055
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D20N03L
Abstract: D20N03
Text: S T U/D20N03L S amHop Microelectronics C orp. J uly 23 ,2004 V er1.1 N-C hannel Logic Level E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON ( mW) S uper high dense cell design for low R DS (ON ). Max R ugged and reliable.
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U/D20N03L
O-252
O-251
O-252AA
Tube/TO-252
O-252
D20N03L
D20N03
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Untitled
Abstract: No abstract text available
Text: S T G 8207 S amHop Microelectronics C orp. Dec 27, 2004 ver1.2 Dual N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S 20V ID R DS ON S uper high dense cell design for low R DS (ON ). ( m Ω ) Max R ugged and reliable.
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Untitled
Abstract: No abstract text available
Text: S T U/D9916L Green Product S amHop Microelectronics C orp. Mar.25 2004 N-C hannel E nhancement Mode Field E ffect Trans is tor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m Ө) Max R ugged and reliable.
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Original
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U/D9916L
O-252
O-251
O-252AA
Tube/TO-252
O-252
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PDF
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Untitled
Abstract: No abstract text available
Text: SDU/D20N03L SamHop Microelectronics Corp. July 2004 ver1.2 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY VDSS ID RDS ON (mW) Super high dense cell design for low RDS(ON). Max Rugged and reliable. 15 @ VGS = 10V 30V
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Original
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SDU/D20N03L
O-252
O-251
O-252AA
DU/D20N03L
O-252
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PDF
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A17S
Abstract: No abstract text available
Text: S DM40N02 S amHop Microelectronics C orp. May ,2004 ver 1.1 N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m W ) Max R ugged and reliable. 44 @ V G S = 4.5V
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DM40N02
300us
A17S
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D50N03
Abstract: D50N03L
Text: S DU/D50N03L S amHop Microelectronics C orp. May,2004 ver1.1 N-C hannel Logic Level E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m W ) Max R ugged and reliable.
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DU/D50N03L
O-252
O-251
O-252AA
Tube/TO-252
O-252
D50N03
D50N03L
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d30n02
Abstract: No abstract text available
Text: S DU/D30N02 S amHop Microelectronics C orp. May,2004 ver1.1 N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S S uper high dense cell design for low R DS ON . R DS (ON) ( m W ) Max ID R ugged and reliable. 20V
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DU/D30N02
O-252
O-251
O-252AA
Tube/TO-252
O-252
d30n02
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PDF
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M8206
Abstract: No abstract text available
Text: S T M8206 S amHop Microelectronics C orp. Nov 22, 2004 ver1.1 Dual N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S 20V ID R DS ON S uper high dense cell design for low R DS (ON ). ( m W ) Max R ugged and reliable.
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M8206
300us
M8206
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Diode Ds 135. 12A
Abstract: M4884A
Text: S T M4884A S amHop Microelectronics C orp. Dec 28 2004 ver1.1 N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON (m W) S uper high dense cell design for low R DS (ON ). typ R ugged and reliable. 6 @ V G S = 10V
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M4884A
Diode Ds 135. 12A
M4884A
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Untitled
Abstract: No abstract text available
Text: S T U/D1530P L S amHop Microelectronics C orp. P reliminary Mar.28 2004 P -C hannel E nhancement Mode MOS FE T F E AT UR E S P R ODUC T S UMMAR Y V DS S ID -30V -20A R DS ON ( m W ) Max S uper high dense cell design for low R DS (ON ). R ugged and reliable.
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Original
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U/D1530P
O-252
O-251
O-252AA
O-252
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Untitled
Abstract: No abstract text available
Text: S DU/D9916 S amHop Microelectronics C orp. May,2004 ver1.1 N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m W ) Max R ugged and reliable. 30 @ V G S = 4.5V
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Original
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DU/D9916
O-252
O-251
O-252AA
O-252
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