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    UHF POWER TRANSISTOR 50W Search Results

    UHF POWER TRANSISTOR 50W Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    UHF POWER TRANSISTOR 50W Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RD70HVF

    Abstract: rd70 RD70HVF1 RD70HVF1-101 100OHM 071J 1695 GP 1
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD70HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W DESCRIPTION OUTLINE RD70HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers


    Original     		PDF RD70HVF1 175MHz70W 520MHz RD70HVF1 175MHz 520MHz RD70HVF rd70 RD70HVF1-101 100OHM 071J 1695 GP 1

    RD70HVF

    Abstract: No abstract text available
    Text: < Silicon RF Power MOS FET Discrete > RD70HVF1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W DESCRIPTION OUTLINE RD70HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers DRAWING 25.0+/-0.3 applications.


    Original     		PDF RD70HVF1 175MHz70W 520MHz RD70HVF1 175MHz 520MHz RD70HVF

    RD70HVF1-101

    Abstract: RD70HVF1 RD70HVF 70w power amplifier rd70hvf1 60W VHF circuit RF amplifier
    Text: < Silicon RF Power MOS FET Discrete > RD70HVF1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W DESCRIPTION OUTLINE RD70HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers DRAWING 25.0+/-0.3 applications.


    Original     		PDF RD70HVF1 175MHz70W 520MHz RD70HVF1 175MHz Oct2011 RD70HVF1-101 RD70HVF 70w power amplifier rd70hvf1 60W VHF circuit RF amplifier

    RD70HVF

    Abstract: RD70HV vhf power transistor 50W 175MHz70W MOSFET 2095 transistor 50w rf power transistor 520-MHz
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD70HVF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W OUTLINE DRAWING DESCRIPTION 25.0+/-0.3 RD70HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers


    Original     		PDF RD70HVF1 175MHz70W 520MHz RD70HVF1 175MHz 520MHz RD70HVF RD70HV vhf power transistor 50W MOSFET 2095 transistor 50w rf power transistor 520-MHz

    RD70HVF1

    Abstract: RD70HVF transistor d 1710 S 170 MOSFET TRANSISTOR vhf power transistor 50W 100OHM 50w rf power transistor d 2095 transistor MOSFET 2095 transistor
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD70HVF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W OUTLINE DESCRIPTION DRAWING 25.0+/-0.3 RD70HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers


    Original     		PDF RD70HVF1 175MHz70W 520MHz RD70HVF1 175MHz 520MHz RD70HVF transistor d 1710 S 170 MOSFET TRANSISTOR vhf power transistor 50W 100OHM 50w rf power transistor d 2095 transistor MOSFET 2095 transistor

    TSDF1205RW

    Abstract: a3 sot 343 TSDF1205W
    Text: TSDF1205W/TSDF1205RW Silicon NPN High Frequency Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low-noise and small-signal low-power amplifiers. This transistor has superior noise figure and assosiated gain performance at UHF, VHF and microwave frequencies.


    Original     		PDF TSDF1205W/TSDF1205RW TSDF1205W TSDF1205RW D-74025 28-Oct-97 a3 sot 343

    TSDF1205R

    Abstract: TSDF1205
    Text: TSDF1205/TSDF1205R Silicon NPN High Frequency Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low-noise and small-signal low-power amplifiers. This transistor has superior noise figure and assosiated gain performance at UHF, VHF and microwave frequencies.


    Original     		PDF TSDF1205/TSDF1205R TSDF1205 TSDF1205R D-74025 28-Oct-97

    NTE365

    Abstract: uhf 3W amplifier
    Text: NTE365 Silicon NPN Transistor RF Power Output PO = 15W @ 512MHz Description: The NTE365 is a silicon NPN transistor designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 512MHz. Features: D Specified 12.5 Volt, 470MHz Characteristic:


    Original     		PDF NTE365 512MHz NTE365 512MHz. 470MHz 470MHz 470MHz, uhf 3W amplifier

    c4100

    Abstract: ic 4148 55FT TRANSISTOR 4148 UTV010 MJE 172
    Text: UTV010 1 Watt, 20 Volts, Class A UHF Television - Band IV & V GENERAL DESCRIPTION CASE OUTLINE The UTV 010 is a COMMON EMITTER transistor capable of providing 1 Watt Peak, Class A, RF Output Power over the band 470 - 860 MHz. Gold Metalization and Diffused Ballasting are used to provide high reliability and


    Original     		PDF UTV010 24Awg 125ml c4100 ic 4148 55FT TRANSISTOR 4148 UTV010 MJE 172

    ms0405

    Abstract: uhf power transistor 50W transistor Common Base configuration 0405-500L ms040
    Text: 0405-500L Rev A . 0405-500L 500 Watts - 32Volts, 1100µs, 26% UHF Pulsed Radar 400 - 450 MHz GENERAL DESCRIPTION The 0405-500L is an internally matched, COMMON EMITTER transistor capable of providing 500 Watts of pulsed RF output power in a push-pull configuration at one thousand and one hundred microsecond pulse width


    Original     		PDF 0405-500L 0405-500L 32Volts, 25oC1 ms0405 uhf power transistor 50W transistor Common Base configuration ms040

    RD70HVF1

    Abstract: RD70HVF1-101 RD70HVF vhf power transistor 50W uhf power transistor 50W MITSUBISHI RF POWER MOS FET S 170 MOSFET TRANSISTOR RF Transistor s-parameter vhf 100OHM Rf power transistor mosfet
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD70HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W OUTLINE DESCRIPTION DRAWING 25.0+/-0.3 RD70HVF1 is a MOS FET type transistor specifically


    Original     		PDF RD70HVF1 175MHz70W 520MHz RD70HVF1 RD70HVF1-101 175MHz 520MHz RD70HVF1-101 RD70HVF vhf power transistor 50W uhf power transistor 50W MITSUBISHI RF POWER MOS FET S 170 MOSFET TRANSISTOR RF Transistor s-parameter vhf 100OHM Rf power transistor mosfet

    RD70HVF1

    Abstract: uhf power transistor 50W RD70HVF RD70HVF1-101 High frequency P MOS FET transistor 010PF 175MHz70W 071J RF Transistor Selection 100OHM
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD70HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W OUTLINE DESCRIPTION DRAWING 25.0+/-0.3 RD70HVF1 is a MOS FET type transistor specifically


    Original     		PDF RD70HVF1 175MHz70W 520MHz RD70HVF1 RD70HVF1-101 175MHz 520MHz uhf power transistor 50W RD70HVF RD70HVF1-101 High frequency P MOS FET transistor 010PF 071J RF Transistor Selection 100OHM

    sec 2sc5088

    Abstract: samsung UHF/VHF TV Tuner 2SC5066 datasheet RF Bipolar Transistor transistor 2SC5066 2SC5088 SEC MT6L04AE MT4S200T AU82 MT6L63FS
    Text: 2007-9 PRODUCT GUIDE Radio-Frequency Semiconductors Radio-Frequency Semiconductor Devices Thank you for using Toshiba’s semiconductor devices. As you know, semiconductor products are widely used in both home and industrial applications. This catalog covers transistors, diodes and


    Original     		PDF BCE0003D S-167 BCE0003E sec 2sc5088 samsung UHF/VHF TV Tuner 2SC5066 datasheet RF Bipolar Transistor transistor 2SC5066 2SC5088 SEC MT6L04AE MT4S200T AU82 MT6L63FS

    Pallet VHF Power Amplifier

    Abstract: BLF578 BLF578 fm band Pallet VHF Power Amplifier TELEVISION blf574 BLF571 BLA6H1214-500 1200w power amplifier LDMOS DVB-T transistors power combiner 4 watt VHF
    Text: RF Power Presentation Broadcast ISM , Microwave and Cellular Richard Marlow: European Regional Marketing February 2009 Microwave, Broadcast & ISM Markets Broadcast (TV and radio transmission) – – – – – NXP has a long history (as Philips) and excellent reputation in the market


    Original     		PDF BLF87x/88x) BLF57x) IS-95 BLF6G38S-25 OT608B BLF6G38-25 OT608A BLF6G38-10 Pallet VHF Power Amplifier BLF578 BLF578 fm band Pallet VHF Power Amplifier TELEVISION blf574 BLF571 BLA6H1214-500 1200w power amplifier LDMOS DVB-T transistors power combiner 4 watt VHF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC4989 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC4989 is a silicon NPN epitaxial planar type transistor Dimension in mm specifically designed for high power amplifiers in UHF band. FEATURES • High power output and high gain: P o^65W , GpeS5.1dB,


    OCR Scan     		PDF 2SC4989 2SC4989 520MHz, 520MHz

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC3102 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION 2SC3102 is a silicon NPN epitaxial planar type transistor specifi­ OUTLINE DRAWING cally designed fo r high power amplifiers applications in UHF band. Dim ensions in mm R1 FEATURES


    OCR Scan     		PDF 2SC3102 2SC3102 520MHz, 520MHz. 520MHz) 100pF to10pF to20pF

    POWER TRANSISTOR 2sC3102

    Abstract: 2SC3102 RF NPN POWER TRANSISTOR 60w
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC3102 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION 2SC3102 is a silicon NPN epitaxial planar type transistor specifi­ OUTLINE DRAWING cally designed fo r high power amplifiers applications in UHF band. Dim ensions in mm R1 FEATURES


    OCR Scan     		PDF 2SC3102 2SC3102 520MHz, 520MHz. 520MHz) POWER TRANSISTOR 2sC3102 RF NPN POWER TRANSISTOR 60w

    transistor 5d

    Abstract: transistor 1P t
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC4989 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC4989 is a silicon NPN epitaxial planar type transistor Dimension in mm specifically designed for high power amplifiers in UHF band. R1 FEATURES • High power output and high gain: P o^65W , GpeS5.1dB,


    OCR Scan     		PDF 2SC4989 2SC4989 520MHz, 520MHz transistor 5d transistor 1P t

    amplifier 50 50W

    Abstract: uhf power transistor 50W UHF TRANSISTOR UHF amplifier module BAL0105-50 50w transistor
    Text: GAE GREAT AMERICAN ELECTROINCS BAL0105-50 Silicon NPN high power UHF transistor BAL0105-50 transistor assembly is designed for wideband push-pull power, large signal output, and driver amplifier stages in the 100-500 Mhz frequency range. Suitable for use in A, AB, B, C


    OCR Scan     		PDF BAL0105-50 OT-161 amplifier 50 50W uhf power transistor 50W UHF TRANSISTOR UHF amplifier module BAL0105-50 50w transistor

    uhf power transistor 50W

    Abstract: TPV5051
    Text: GAE GREAT AMERICAN ELECTROINCS TPV5051 Silicon NPN high power UHF transistor TPV5051 is a push-pull device designed for wideband power transmitter equipment Af=390-840 Mhz . Suitable for high power TV amplifiers operating in bands IV or V. Output Power: Frequency Range:


    OCR Scan     		PDF TPV5051 TPV5051 FO-57C 00000S3 uhf power transistor 50W

    2 x 50W amplifier

    Abstract: UHF TRANSISTOR 2SC3218B 50w transistor
    Text: GAE GREAT AMERICAN ELECTROINCS 2SC3218B Silicon NPN power UHF transistor 2SC3218B permits the design of a Class AB Push-Pull broadband amplifier having a good degree of linearity. Output Power: Frequency Range: Voltage: Package Type: Common Emitter Configuration


    OCR Scan     		PDF 2SC3218B 2SC3218B 2 x 50W amplifier UHF TRANSISTOR 50w transistor

    2 x 50W amplifier

    Abstract: 2SC3218B uhf power transistor 50W 2SC3218
    Text: GAE GREAT AMERICAN ELECTROINCS 2SC3218B Silicon NPN power UHF transistor 2SC3218B permits the design of a Class AB Push-Pull broadband amplifier having a good degree of linearity. Output Power: Frequency Range: Voltage: Package Type: Common Emitter Configuration


    OCR Scan     		PDF 2SC3218B 2SC3218B 2 x 50W amplifier uhf power transistor 50W 2SC3218

    TRANSISTOR 1P

    Abstract: 1p TRANSISTOR NPN Silicon Epitaxial Planar Transistor 700 v MITSUBISHI FERRITE transistor 1P F mitsubishi rf transistor 1P t 2SC4989 1P RF uhf power transistor 50W
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC4989 NPN EPITAXIAL PLANAR TYPE D ESC R IPTIO N 2SC4989 is a silicon NPN epitaxial planar type transistor O UTLINE DRAW ING Dimension in mm specifically designed for high power amplifiers in UHF band. R1 FEA TU R ES • High power output and high gain : Po S 65W, Gpe S 5.1 dB,


    OCR Scan     		PDF 2SC4989 2SC4989 520MHz, T-40E Tc-25^ 520MHz TRANSISTOR 1P 1p TRANSISTOR NPN Silicon Epitaxial Planar Transistor 700 v MITSUBISHI FERRITE transistor 1P F mitsubishi rf transistor 1P t 1P RF uhf power transistor 50W

    acrian RF POWER TRANSISTOR

    Abstract: acrian RF POWER TRANSISTOR 300 w transistor c128 C1-28-2 CM25-28 transistor d 571 CM10-28 Acrian transistor c1-28 acrian inc
    Text: ACRIAN INC T7 D E § 0 1 f l 2 □□ □ U h ? 7 p C GENERAL DESCRIPTION The C1-28 is a UHF power transistor designed to produce 1 watt of RF power when operated from a 28V power supply and used below 500MHz. The C1 -28 is also available in a stud package as part No. C1-28Z.


    OCR Scan     		PDF 01fl2! C1-28 500MHz. C1-28Z. C1-28/C1-28Z -65to GDD117D C1-28/Z-4 acrian RF POWER TRANSISTOR acrian RF POWER TRANSISTOR 300 w transistor c128 C1-28-2 CM25-28 transistor d 571 CM10-28 Acrian transistor c1-28 acrian inc