SG 2368

Abstract: UFND220
Contextual Info: UNITRODE CORP 9347963 TE U N IT R O D E CORP DE 1 ^ 3 4 7 ^ 3 DDlOfllS 1 | ~ 92D ’ iS'^15' 10815 P O W E R M O S F E T T R A N S IS T O R S 200 Volt, 0 .8 Ohm N-Channel UFND220 FEA TU R ES D ESC R IPTIO N • • • • • • • The Unitrode power M OSFET design utilizes the most advanced technology available. This

Contextual Info: UFND220 UFND223 POWER MOSFET TRANSISTORS 2 00 Volt 0 .8 Ohm N-Channel FEATURES DESCRIPTION • • • • • • • The Unitrode pow er MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Rqsioni an^ a high transconductance.

UFN540

Abstract: UFN833 UPT613 UFNF130 UFN451 U2T105 U2T305 TQ-66 ufn432 UFN450
Contextual Info: N-CHANNEL POWER MOSFETS Vm ft»* «» Dram On-State Source •Resist­ ance Voltage Volts (Shuns) PRODUCT SELECTION GUIDE Is Continuous Drain Current :. . 1°« . Pulsed: . ÉwMiv Current Part ■ ‘lifcrtr: Numbers j : Càsja; (Amps) : Vos Drain. On-State