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    UES1101 Price and Stock

    Microchip Technology Inc UES1101

    DIODE GEN PURP 50V 2A A AXIAL
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    DigiKey UES1101 Bulk 100
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    UES1101 Reel 24 Weeks 100
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    Mouser Electronics UES1101
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    Newark UES1101 Bulk 100
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    Microchip Technology Inc UES1101 24 Weeks
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    Onlinecomponents.com UES1101
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    NAC UES1101 20
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    Master Electronics UES1101
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    Microchip Technology Inc UES1101SM

    DIODE GEN PURP 50V 2A A SQ-MELF
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    DigiKey UES1101SM Bulk 100
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    UES1101SM Bulk 24 Weeks 100
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    Newark UES1101SM Bulk 100
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    Microchip Technology Inc UES1101SM 24 Weeks
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    NAC UES1101SM 15
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    Avnet Silica UES1101SM 26 Weeks 100
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    Microchip Technology Inc UES1101-TR

    DIODE GEN PURP 50V 2A A AXIAL
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    DigiKey UES1101-TR Reel 100
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    Microchip Technology Inc UES1101SME3

    DIODE GEN PURP 50V 2.5A A AXIAL
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    Microchip Technology Inc UES1101SME3 290 24 Weeks
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    NAC UES1101SME3 15
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    Master Electronics UES1101SME3
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    Microchip Technology Inc UES1101SM-TR

    DIODE GEN PURP 50V 2A A SQ-MELF
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    DigiKey UES1101SM-TR Reel 100
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    UES1101 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    UES1101 BKC International 2.5 Amp Voidless Fast Switching Rectifiers, Hard Glass Tungsten Scan PDF
    UES1101 Microsemi Rectifier Scan PDF
    UES1101 Microsemi Rectifiers, High Efficiency, 2.5A Scan PDF
    UES1101 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    UES1101 Unitrode International Semiconductor Data Book 1981 Scan PDF

    UES1101 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: UES1101 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current2.5 V(RRM)(V) Rep.Pk.Rev. Voltage50 t(rr) Max.(s) Rev.Rec. Time25n @I(F) (A) (Test Condition)500m @I(R) (A) (Test Condition)1.0 V(FM) Max.(V) Forward Voltage975m @I(FM) (A) (Test Condition)2.0


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    UES1101 Voltage50 Time25n Voltage975m Current50u PDF

    ZENER A25

    Abstract: No abstract text available
    Text: ISCFdÈÕ T Õ T( text/html About News Contact keyword search: UES1101SM (#16634 Package Division Scottsdale Datasheet (none) Mil-Spec Shipping (none) TR7\1500cntTR7 Qual Data Contact Microsemi Symbol Max IO 2.5 A Reverse Voltage Vrwm 50 V Max Forward Surge Current


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    UES1101SM 100ns) TR7\1500cntTR7 ZENER A25 PDF

    Untitled

    Abstract: No abstract text available
    Text: DIGITRON SEMICONDUCTORS UES1101UES1103 2.5A HIGH-EFFICIENCY RECTIFIERS MAXIMUM RATINGS Rating Symbol UES1101 UES1102 UES1103 Peak inverse voltage VR 50 100 150 Maximum average DC output at TL = 75°C, L = 3/8” IO 2.5 A Non-repetitive surge current at 8.3ms


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    UES1101 UES1103 UES1102 MIL-PRF-19500, PDF

    SMD Transistors w04 sot-23

    Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
    Text: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.


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    represent9-14 SMD Transistors w04 sot-23 transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355 PDF

    1N5806

    Abstract: 1N5802 CMR3U-01 CPD17 UES1101 UES1106
    Text: PROCESS CPD17 Ultra Fast Rectifier 3 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 88 x 88 MILS Die Thickness 14 MILS Anode Bonding Pad Area 69 x 69 MILS Top Side Metalization Ni/Au - 5,000Å/2,000Å Back Side Metalization


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    CPD17 1N5802 1N5806 UES1101 UES1106 CMR3U-01 22-March 1N5806 CPD17 UES1106 PDF

    BC548 TRANSISTOR REPLACEMENT

    Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
    Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction


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    BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03 BAP63-02 BAP64-03 BAP64-02 BB143 BC548 TRANSISTOR REPLACEMENT TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587 PDF

    1N5806

    Abstract: UES1101 mesa die 1N5802 CMR3U-01 CPD17 UES1106
    Text: PROCESS CPD17 Central Ultra Fast Rectifier TM Semiconductor Corp. 3 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 87 x 87 MILS Die Thickness 12.2 MILS Anode Bonding Pad Area 69.5 x 69.5 MILS Top Side Metalization


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    CPD17 1N5802 1N5806 UES1101 UES1106 CMR3U-01 19-September 1N5806 mesa die CPD17 UES1106 PDF

    MUR1560 equivalent

    Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
    Text: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in


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    MBRD835L VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MUR1560 equivalent 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent PDF

    1n5822 trr

    Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
    Text: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


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    MBRD1035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 1n5822 trr A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50 PDF

    OZ 9983

    Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
    Text: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —


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    MBRB3030CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 OZ 9983 mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45 PDF

    Diode 1N4007 DO-7 Rectifier Diode

    Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
    Text: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced


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    MBRM120ET3 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 Diode 1N4007 DO-7 Rectifier Diode FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode PDF

    CAT7105CA

    Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
    Text: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A


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    5CE120C 5KE120CA 5CE120CA 5CE12A 5KE12A 5CE12C 5KE12CA 5CE12CA CAT7105CA mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al PDF

    stpr16

    Abstract: MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode
    Text: MURB1620CT Preferred Device SWITCHMODE Power Rectifier D2PAK Power Surface Mount Package Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • • • •


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    MURB1620CT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 stpr16 MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode PDF

    BYV27-50

    Abstract: BYV27-100 BYV27-150 UES1103 UES1101 UES1100
    Text: RECTIFIERS High Efficiency, 2.5A UES1101 UES1102 UES1103 FEATURES • Very Fast Recovery Times • Very Low Forward Voltage • Small Size • Convenient Package BYV27-50 BYV27-100 BYV27-150 DESCRIPTION An axial leaded power rectifier useful in many switching applications.


    OCR Scan
    UES1101 UES1102 UES1103 BYV27-50 BYV27-100 BYV27-150 UES1X02 UES1103 BYV27-150 UES1100 PDF

    BKC Semiconductors

    Abstract: DSAIH0002563 UES1101
    Text: 2.5 Amp Voidless Fast Switching Rectifiers UES1101 thru UES1103 Applications Hard Glass Tungsten For use in hostile environments such as military and aerospace. Used where higher current, surge and small footprint are important. They are ideal for use in industrial, aircraft or satellite power supplies.


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    UES1101 UES1103 UES1101 UES1103 117H33 BKC Semiconductors DSAIH0002563 PDF

    UES1102

    Abstract: UES1101 DO-213AB UES1103 BKC Semiconductors
    Text: 2.5 Amp Voidless Fast Switching Rectifiers UES1101 thru Applications UES1103 Hard Glass Tungsten For use in hostile environments such as military and aerospace. Used where higher current, surge and small footprint are irnportant. They ar$ i# a i tor use in industrial, aircraft or satellite p d v^ ^ yj^ lies.


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    UES1101 UES1103 UES1101 UES1102 UES1103 LL-41 DO-213AB) DO-213AB BKC Semiconductors PDF

    BKC Semiconductors

    Abstract: No abstract text available
    Text: 2.5 Amp Voidless Fast UES1101 Switching Rectifiers thru UES1103 Applications Hard Glass Tungsten For use in hostile environments such as military and aerospace. Used where higher current, surge and small footprint are important. They are ideal for use in industrial, aircraft or satellite power supplies.


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    UES1101 UES1103 con33 UES1101 UES1102 LL-41 DO-213AB) BKC Semiconductors PDF

    UES1101SM

    Abstract: No abstract text available
    Text: SURFACE MOUNT RECTIFIERS UES1101SM UES1102SM UES1103SM High Efficiency, 4.0A FEATURES DESCRIPTION • Small Convenient Surface Mount Package For use in high frequency power switching circuits, the UES1101SM series is specifically designed for surface mount applications when board space and surface


    OCR Scan
    UES1101SM UES1102SM UES1103SM UES1101SM 25nSec) ES1101SM UES11Q2SM PDF

    Untitled

    Abstract: No abstract text available
    Text: UNITRODE CORP 9347963 T2 UNITRODE Ï F | i 3 4 7 c t,3 0011370 D 92D CORP 11378 UES1101SM UES1102SM UES1103SM 7 -6 ì - 17 SURFACE MOUNT RECTIFIERS High Efficiency, 4.0A FEATURES DESCRIPTION • Small Convenient Surface Mount Package For use in high frequency power switching circuits, the U ES1 101SM series is


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    i347c UES1101SM UES1102SM UES1103SM 101SM 25nSec) 101SM ES1102SM ES1103SM PDF

    Untitled

    Abstract: No abstract text available
    Text: UESI101 UES1102 UES1103 RECTIFIERS High Efficiency, 2.5A BYV27-50 BYV27-100 BYV27-150 FEATURES DESCRIPTION • • • • An axial leaded power rectifier useful in many switching applications. Particularly suited where very fast recovery and low forward voltage are


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    UESI101 UES1102 UES1103 BYV27-50 BYV27-100 BYV27-150 UES1101 100ms PDF

    Untitled

    Abstract: No abstract text available
    Text: RECTIFIERS U ESI 101 UESI102 UES1103 High Efficiency, 2.5A BYV27-50 BYV27-100 BYV27-150 FEATURES DESCRIPTION • • • • An axial leaded power rectifier useful in m any switching applications. Particularly suited where very fast recovery and low forward voltage are


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    UESI102 UES1103 BYV27-50 BYV27-100 BYV27-150 UES1101 UES1102 PDF

    UES1102

    Abstract: unitrode BYV27-100 BYV27-150 UES1101 UES1101-UES1103 UES1103 BYV27 BYV27-50 UES1100
    Text: RECTIFIERS BYV27-50 BYV27-100 BYV27-150 FEATURES • Very Fast Recovery Times • Very Low Forward Voltage • Small Size • Convenient Package DESCRIPTION An axial leaded power rectifier useful in many switching applications. Particularly suited where very fast


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    BYV27-50 BYV27-100 BYV27-150 UES1103 UES1101 UES1102 unitrode UES1101-UES1103 UES1103 BYV27 UES1100 PDF

    USD1120

    Abstract: USD1130 L5a 12v 30a unitrode 1n5806 USD1120 UNITRODE 150A 100V gto UT347 USD1140 T0447 SES5702
    Text: SCHOTTKY RECTIFIERS PRODUCT SELECTION GUIDE - e Similar to DO-41 TO-247 TO-220AC TO-39 mwm i m m m •' f ö * i . ! Ì ■ _ / •0 41 äEEBIÄE j >*, mmm \ . i*SA :iw !: VrM • *ss«ki:; • f f i“ USD1120 .45 @ 1A 50A 1N5818 .55 @ 1A 25A USD1130 .475 @ 1A


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    DO-41 O-220AC O-247 USD820 1N5817 1N5818 USD1120 USD1130 USD620 USD720 USD1120 USD1130 L5a 12v 30a unitrode 1n5806 USD1120 UNITRODE 150A 100V gto UT347 USD1140 T0447 SES5702 PDF

    2N2222A mps

    Abstract: 2N512AB 2n2222 mps 1N1096 1N589 1n4007 - 2n4001 2N698 SCR 1N233A 1N20461 2N3304
    Text: ¿S c iscre:e devices ^ ! jemitronicr hot line TOLL FREE NUMBER 800-777-3960 alpha-numeric index Type 1N34A 1N35 1N36 1N38.A.B 1N40 1N42 1N44/ 1N51 1N52,A 1N54,A 1N55AB 1N56,A 1N57,A 1N58.A 1N60.A 1N61 1N62 1N63,A 1N65 1N66.A 1N67.A 1N68.A 1N69,A 1N70,A 1N71


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    1N34A 1N55AB 1N100 1N102 1N103 1N104 1N107 1N108 1N111/ 1N117 2N2222A mps 2N512AB 2n2222 mps 1N1096 1N589 1n4007 - 2n4001 2N698 SCR 1N233A 1N20461 2N3304 PDF