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    UES1001 Price and Stock

    Phihong USA UES-1001A160-RW

    USB 2.0 TYPE C CABLE
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    DigiKey UES-1001A160-RW Bulk 628 1
    • 1 $7.49
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    Mouser Electronics UES-1001A160-RW 10
    • 1 $8.56
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    Sager UES-1001A160-RW 1
    • 1 $7.27
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    Phihong USA UES-1001A160

    LOW DROP TYPE-C USB CABLE - 1.0M
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    DigiKey UES-1001A160 Box 461 1
    • 1 $14.94
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    Microchip Technology Inc UES1001

    DIODE GEN PURP 50V 1A A AXIAL
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    DigiKey UES1001 Bulk 100
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    Avnet Americas UES1001 Reel 24 Weeks 100
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    UES1001 Bulk 24 Weeks 100
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    Microchip Technology Inc UES1001
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    Onlinecomponents.com UES1001
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    NAC UES1001 20
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    Microchip Technology Inc UES1001SM

    DIODE GEN PURP 1A A SQ-MELF
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    DigiKey UES1001SM Bulk 100
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    Avnet Americas UES1001SM Bulk 24 Weeks 100
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    Microchip Technology Inc UES1001SM
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    NAC UES1001SM 15
    • 1 $23.01
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    Microchip Technology Inc UES1001/TR

    DIODE GEN PURP 50V 1A A AXIAL
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    DigiKey UES1001/TR Reel 100
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    UES1001 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Type PDF
    UES1001 BKC International 1.0 Amp Voidless Fast Switching Rectifiers Scan PDF
    UES1001 Central Semiconductor Scan PDF
    UES1001 Microsemi Rectifier Scan PDF
    UES1001 Microsemi Rectifiers, High Efficiency, 1A Scan PDF
    UES1001 Unitrode International Semiconductor Data Book 1981 Scan PDF

    UES1001 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SMD Transistors w04 sot-23

    Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
    Text: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.


    Original     		PDF represent9-14 SMD Transistors w04 sot-23 transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355

    BC548 TRANSISTOR REPLACEMENT

    Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
    Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction


    Original     		PDF BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03 BAP63-02 BAP64-03 BAP64-02 BB143 BC548 TRANSISTOR REPLACEMENT TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587

    MUR1560 equivalent

    Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
    Text: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in


    Original     		PDF MBRD835L VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MUR1560 equivalent 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent

    1n5822 trr

    Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
    Text: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		PDF MBRD1035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 1n5822 trr A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50

    OZ 9983

    Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
    Text: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —


    Original     		PDF MBRB3030CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 OZ 9983 mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45

    Diode 1N4007 DO-7 Rectifier Diode

    Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
    Text: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced


    Original     		PDF MBRM120ET3 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 Diode 1N4007 DO-7 Rectifier Diode FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode

    CAT7105CA

    Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
    Text: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A


    Original     		PDF 5CE120C 5KE120CA 5CE120CA 5CE12A 5KE12A 5CE12C 5KE12CA 5CE12CA CAT7105CA mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al

    CTX12SL

    Abstract: CTX12S CTX-12SL STPS1045CT RS8KT MBR020 BYT30P-600 RS8DT FMS-3FU BYT01-200
    Text: CROSS REFERENCE POWER RECTIFIERS INDUSTRY STANDARD 10BF10 10BF100 10BF20 10BF40 10BF60 10BF80 10BQ015 10BQ040 10BQ060 10BQ100 10CTF30 10CTF40 10CTQ150 10CTQ150S 10DL2C41A 10DL2CZ47A 10GWJ2CZ47C 10MF2 10MQ040 10MQ060 10MQ090 10TQ035 10TQ045 11DF1 11DF2 11DF4


    Original     		PDF 10BF10 10BF100 10BF20 10BF40 10BF60 10BF80 10BQ015 10BQ040 10BQ060 10BQ100 CTX12SL CTX12S CTX-12SL STPS1045CT RS8KT MBR020 BYT30P-600 RS8DT FMS-3FU BYT01-200

    CMR1U-01

    Abstract: CMR1U-01M CPD16 UES1001 UES1003 UF4007
    Text: PROCESS CPD16 Central Ultra Fast Rectifier TM Semiconductor Corp. 1.0 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 50 x 50 MILS Die Thickness 12.2 MILS Anode Bonding Pad Area 34 x 34 MILS Top Side Metalization


    Original     		PDF CPD16 UES1001 UES1003 UF4001 UF4007 CMR1U-01 CMR1U-01M 19-September CPD16 UES1003 UF4007

    CTX12S

    Abstract: CTX12SL CTX-12SL CTB34M FMPG3F BYV10-40 equivalent BAT42 equivalent STPS3045CW Equivalent BYV42-200 CTL22S
    Text: CROSS REFERENCE POWER RECTIFIERS INDUSTRY STANDARD SGS-THOMSON SGS-THOMSON EQUIVALENT NEAREST INDUSTRY STANDARD SGS-THOMSON SGS-THOMSON EQUIVALENT NEAREST SMBYW01-200 16CPF20 BYW99W-200 10BF100 STTA112U 16CTQ100 STPS20H100CT 10BF20 SMBYW01-200 16CTQ100S 10BF40


    Original     		PDF SMBYW01-200 16CPF20 BYW99W-200 10BF100 STTA112U 16CTQ100 STPS20H100CT 10BF20 16CTQ100S CTX12S CTX12SL CTX-12SL CTB34M FMPG3F BYV10-40 equivalent BAT42 equivalent STPS3045CW Equivalent BYV42-200 CTL22S

    CMR1U-01M

    Abstract: UF4007 CMR1U-01 CPD16 UES1001 UES1003
    Text: PROCESS CPD16 Ultra Fast Rectifier 1 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 51 x 51 MILS Die Thickness 14 MILS Anode Bonding Pad Area 34 x 34 MILS Top Side Metalization Ni/Au - 5,000Å/2,000Å Back Side Metalization


    Original     		PDF CPD16 UES1001 UES1003 UF4001 UF4007 CMR1U-01 CMR1U-01M 22-March UF4007 CPD16 UES1003

    1001-UES1003

    Abstract: No abstract text available
    Text: RECTIFIERS UES1001-UES1003 High Efficiency, 1A FEATURES • Very Fast Recovery Times • Very Low Forward Voltage • Small Size • Convenient Package DESCRIPTION An axial leaded power rectifier useful in many switching applications. Particularly suited where very fast


    OCR Scan     		PDF 1001-UES1003 UES1001 UES1002 UES1003 1001-UES1003

    Untitled

    Abstract: No abstract text available
    Text: UNITRO DE CORP 9347963 T2 U NITRODE DE | T 3 4 7 cît.3 00113713 L. 92D CORP 11376 D UES1001SM UES1002SM UES1003SM SURFACE MOUNT RECTIFIERS High Efficiency, 2 A r. ùj - FEATURES DESCRIPTION • Small Convenient Surface Mount Package For use in high frequency power switching circuits, the U ES10Q 1SM series Is


    OCR Scan     		PDF UES1001SM UES1002SM UES1003SM ES10Q 1347c 0D11377 ES1002SM ES1003SM 10/rs

    DL-41 package

    Abstract: No abstract text available
    Text: Micmsemi Ultra Fast Rectifiers 1N4532 UES1001 UF105 UF105SM UFS105G UFS105J DLSF11 ER1A ES1A SF11 UF4001 UF4001GP UES1002 UF110 UF110SM UFS110G UFS110J DLSF12 ER1B ES1B SF12 UF4002 UF4002GP UES1003 UF115 UF115SM UFS115G UFS115J DLSF13 DLSF14 ER1C ES1C SF13


    OCR Scan     		PDF DO-34 DO-41 DO-213AB DO-215AA DO-214BA DL-41 DO-214AA DO-214AC DL-41 package

    T02SA

    Abstract: BKC Semiconductors UES1001 UES1002 UES1003
    Text: 1.0 Amp Voidless Fast Applications Switching Rectifiers UES1001 thru UES1003 Hard Glass Tungsten For use in hostile environments such as military and aerospace. Used where performance, surge and small footprint are important. They are ideal for use in industrial, aircraft or satellite power supplies.


    OCR Scan     		PDF UES1001 UES1001 UES1003 T02SA BKC Semiconductors UES1002

    DO-213AB

    Abstract: UES1001 UES1002 UES1003 BKC Semiconductors
    Text: 1.0 Amp Voidless Fast Applications Switching Rectifiers UES1001 thru UES1003 Hard Glass Tungsten For use in hostile environments such as military and aerospace. Used where performance, surge and small footprint are important They are ideai for use in industriai, aircraft or satellite power supplier.


    OCR Scan     		PDF UES1001 UES1003 UES1001 UES1002 UES1003 LL-41 DO-213AB) DO-213AB BKC Semiconductors

    S1001

    Abstract: UES1001 UES1002 UES1003
    Text: RECTIFIERS UES1001-UES1003 High Efficiency, 1A FEATURES DESCRIPTION • Very Fast Recovery Times • Very Low Forward Voltage An axial leaded power rectifier useful in many switching applications. Particularly suited where very fast recovery and low forward voltage are


    OCR Scan     		PDF UES1001-UES1003 S1001 UES1002 UES1003 S1001 UES1001 UES1002 UES1003

    Untitled

    Abstract: No abstract text available
    Text: RECTIFIERS UES1001-UES1003 High Efficiency, 1A FEATURES • Very Fast Recovery Times • Very Low Forward Voltage • Small Size • Convenient Package DESCRIPTION An axial leaded power rectifier useful in many switching applications. Particularly suited where very fast


    OCR Scan     		PDF UES1001-UES1003 UES1001 UES1002 UES1003

    Genarator

    Abstract: UES1001 UES1002 UES1003
    Text: UES1001-UES1003 RECTIFIERS High Efficiency, 1A FEATURES • • • • DESCRIPTION Very Fast Recovery Times Very Low Forward Voltage Small Size Convenient Package An axial leaded power rectifier useful in many sw itching applications. Particularly suited where very fast


    OCR Scan     		PDF UES1001-UES1003 UES1001 UES1002 UES1003 100/js 25V4C Genarator UES1001 UES1002 UES1003

    MAX654

    Abstract: 6860-07 MAX655 IN5818 diode IR 4110 MOSFET FP MAX656CPD MAX654-659
    Text: y n y j x i y i / i L o w V o ltag e Step-U p DC-DC C onverters _ Features 4 +5V at 170mA from a Single-Cell Battery 4 Guaranteed Start-Up at 1.15V 4 Minimum Component Count The performance characteristics of each device are listed in the following table. The MAX654/656/657 are


    OCR Scan     		PDF MAX654-659 MAX654/656/657 MAX655/658/659 MAX654/655/657/659 MAX656/MAX658 MAX654 6860-07 MAX655 IN5818 diode IR 4110 MOSFET FP MAX656CPD

    Untitled

    Abstract: No abstract text available
    Text: QOh a r r i s u i sem iconductor IC L 7 6 4 4 , IC L 7 6 4 5 IC L 7 6 4 6 , IC L 7 6 4 7 May 1992 Low Voltage Step-Up Converters Features Description • +5V at 40mA From a 1.5V Source The ICL7644, ICL7645 and ICL7646 are low power fixed +5V output step-up DC-DC converters designed for


    OCR Scan     		PDF 150mA MAX65X ICL7644, ICL7645 ICL7646 ICL7647, ICL7646The

    Caddell-Burns 6860

    Abstract: MAX654CPD MAX656 MAX656CPD IN5818 diode IR 4110 MOSFET FP MAX655 MAX654 6860-07 high efficiency current mode flyback converter
    Text: _ The performance characteristics of each device are listed in the following table. The MAX654/656/657 are optimized for single-cell input, while the MAX655/658/659 work best with two series alkaline or NiCad cells, or one lithium celt. The MAX654/665/657/659 contain an inter­


    OCR Scan     		PDF MAX654-659 MAX654/656/657 MAX655/658/659 MAX654/665/657/659 MAX656/658. MAX659CSD MAX659C/D MAX659EPD MAX659ESD MAX659MJD Caddell-Burns 6860 MAX654CPD MAX656 MAX656CPD IN5818 diode IR 4110 MOSFET FP MAX655 MAX654 6860-07 high efficiency current mode flyback converter

    hp ms 7647

    Abstract: harris 7644 la 7646 764X ICL764X 187Ly 7646 7647
    Text: S i. It 2 >991 IC L 6 4 4 /6 4 5 /646/647 IC L 7 6 4 4 /7 645/7646/7647 2 HARRIS July 1991 Low V o lta g e S te p -U p C o n verters F e a tu re s D e s c rip tio n • +5V @ 40mA From a Single Cell Battery The ICL644, IC L645 and IC L646 are low pow er fixed +5V


    OCR Scan     		PDF ICL644/645/646/647 CL7644/7645/7646/7647 MAX65X 4-20mA ICL644, hp ms 7647 harris 7644 la 7646 764X ICL764X 187Ly 7646 7647

    USD1120

    Abstract: USD1130 L5a 12v 30a unitrode 1n5806 USD1120 UNITRODE 150A 100V gto UT347 USD1140 T0447 SES5702
    Text: SCHOTTKY RECTIFIERS PRODUCT SELECTION GUIDE - e Similar to DO-41 TO-247 TO-220AC TO-39 mwm i m m m •' f ö * i . ! Ì ■ _ / •0 41 äEEBIÄE j >*, mmm \ . i*SA :iw !: VrM • *ss«ki:; • f f i“ USD1120 .45 @ 1A 50A 1N5818 .55 @ 1A 25A USD1130 .475 @ 1A


    OCR Scan     		PDF DO-41 O-220AC O-247 USD820 1N5817 1N5818 USD1120 USD1130 USD620 USD720 USD1120 USD1130 L5a 12v 30a unitrode 1n5806 USD1120 UNITRODE 150A 100V gto UT347 USD1140 T0447 SES5702