628-L168200J
Abstract: L163400J000 628-L1692B1J2 L1672B1J000 L4044-B1J 628-L169200J2 L1671B1J000 L167200J 628-L1671B1J L2034B1J000
Text: BACK NEXT Seiko Instruments LCD Displays SEIKO INSTRUMENTS LCD Display Modules A NE Prod W uct B NE Prod W uct E NE Prod W uct F I J C D G H K L LCD DISPLAY MODULES Features: • • These character modules contain many features designed to simplify their use and enhance a variety of applications. Different sizes, fluids and backlight
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HA1-5134-5
Abstract: HA-4741 HA-5134 LM148 LT1014 OP11 OP-400 RM4156 HP5082-2810 QN23
Text: HA-5134 UCT PROD UCT E T E L PR O D E T O B SO U IT B ST LE SU -5104 Data Sheet HA POSSIB itle A34 bt Hz recin, ad eranal plir) utho ) eyrds ter- July 2001 2926.4 4MHz, Precision, Quad Operational Amplifier Features The HA-5134 is a precision quad operational amplifier that is
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HA-5134
HA-5134
OP-400,
LT1014,
RM4156,
LM148
HA-4741.
500kV/V
HA1-5134-5
HA-4741
LT1014
OP11
OP-400
RM4156
HP5082-2810
QN23
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621K
Abstract: 10nK 63 68nK 400
Text: IN D n UCT H A ±1 NC IN 0% E D FR UCT EQ AN UE CE Q MI NCY TES NI MU (MH T Q z) M T FR EST EQ UE SR NCY F (M MI Hz NI ) MU DC M R (M MA ES Hz XI IST ) MU A N CU M C RR (O E MA E H XI NT MS MU R ) M ATI (m NG A) Wirewound Surface Mount Inductors NU MB ER
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WW1008R
WW1008
WW1008
HP4291A
HP16193A
-10NK
-12NK
-15NK
-18NK
-22NK
621K
10nK 63
68nK 400
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Untitled
Abstract: No abstract text available
Text: IN D n UCT H A ±1 NC IN 0% E D FR UCT EQ AN UE CE Q MI NCY TES NI MU (MH T Q z) M T FR EST EQ UE SR NCY F (M MI Hz NI ) MU DC M R (M MA ES Hz XI IST ) MU A N CU M C RR (O E MA E H XI NT MS MU R ) M ATI (m NG A) Wirewound Surface Mount Inductors NU MB ER
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WW1008
-10NK
-12NK
-15NK
-18NK
-22NK
-24NK
-27NK
-33NK
-39NK
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Untitled
Abstract: No abstract text available
Text: IN D n UCT H A ±1 NC IN 0% E D FR UCT EQ AN UE CE Q MI NCY TES NI MU (MH T Q z) M T FR EST EQ UE SR NCY F (M MI Hz NI ) MU DC M R (M MA ES Hz XI IST ) MU A N CU M C RR (O E MA E H XI NT MS MU R ) M ATI (m NG A) Wirewound Surface Mount Inductors NU MB ER
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1008WW
-10NK
-12NK
-15NK
-18NK
-22NK
-24NK
-27NK
-33NK
-39NK
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marking code 27A
Abstract: marking 27A sot23 marking code 27a sot sot-23 Marking 27A E DMP3160L DMP3160L-7 J-STD-020D transistor SOT-23 marking ps3 sot-23 Marking 27A marking 27A sot-23
Text: DMP3160L P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features NEW PRO D UCT • • • • • • • • • Mechanical Data • • Low On-Resistance: RDS ON < 122mΩ @ VGS = -10V, ID = -2.7A
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DMP3160L
AEC-Q101
OT-23
DS31268
marking code 27A
marking 27A sot23
marking code 27a sot
sot-23 Marking 27A E
DMP3160L
DMP3160L-7
J-STD-020D
transistor SOT-23 marking ps3
sot-23 Marking 27A
marking 27A sot-23
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E112
Abstract: EX2001 10baset low pass filter
Text: EXTENDED TEMPERATURE SURFACE MOUNT 10BASE-T INTERFACE MODULES Fully Integrated for Adapter, Hub, and Motherboard Applications NEW Extended temperature operates from -40°C to +85°C ! UCT D O PR Meets IEEE 802.3 specification EX2001 part is designed for AMD
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10BASE-T
EX2001
EX2001
10MHz
E112
10baset low pass filter
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1GM sot-23 transistor
Abstract: UCT 122
Text: MMBTA06 Small Signal Transistors NPN uct New Features d o r P • NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. • As complementary type, the PNP tranistor MMBTA56 is recommended. • This transistor is also available in the TO-92 case
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MMBTA06
OT-23
MMBTA56
MPSA06.
OT-23
1GM sot-23 transistor
UCT 122
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transistor b528
Abstract: M68HC11 M68HC12 M68HC12A4EVB MC68HC12 MC68HC812A4 F26FB mdw 45 mc68hc908 32 dip pin assignment
Text: Freescale Semiconductor, Inc. M68HC12A4EVBUM/D October 1999 Freescale Semiconductor, Inc. M68HC12A4EVB EVALUATION BOARD OR, USER’S MANUAL UCT CH R A ED V I BY EE R F LE A SC S N O IC M E D For More Information On This Product, Go to: www.freescale.com
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M68HC12A4EVBUM/D
M68HC12A4EVB
transistor b528
M68HC11
M68HC12
M68HC12A4EVB
MC68HC12
MC68HC812A4
F26FB
mdw 45
mc68hc908 32 dip pin assignment
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1200 volt mosfet
Abstract: 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P
Text: IXYS POWER Efficiency through Technology NE W P R O D UCT B R I E F 1000V to 1200V Polar Standard and HiPerFET Power MOSFETs NEXT GENERATION N-CHANNEL POWER MOSFETS OCTOBER 2007 OVERVIEW These new 1000-1200V Standard and HiPerFETTM additions to the IXYS PolarTM Power MOSFET
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000-1200V
IXFB30N120P
IXFL30N120P
IXFN30N120P
IXFL32N120P
IXFN32N120P
PluS220
IXFV110N10PS
1200 volt mosfet
1000 volt mosfet
mosfet 300 volt
HiperFET
IXFN38N100
sot 227b diode fast
transistor polar
2R4N120P
IXFN44N100P
IXFB44N100P
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Untitled
Abstract: No abstract text available
Text: Finisar Productt Specificaation Multiprotoccol 80Km m, 10Gb/ss DWDM M XFP Op ptical Trransceiver FTLX X3815M33xx PRODU UCT FEATU URES • Gb/s to 11.35 5Gb/s Supports 8.5G • Hot-pluggabl H le XFP footp print • RoHS-6 R Com mpliant lead-free • 100GHz ITU Grid, C-Ban
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10Gb/s
X3815M3
100GHz
DW100S-2Dx
DW100C-2Ax
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DG526CJ
Abstract: DG527 equivalent DG526 DG526AK DG526BK DG526BY DG526CK DG527 DG528 DG529
Text: Semiconductor April 1999 T UCT DUC ROD TE PRO 747 P E T 7 TITU OLE 442OBS LE SUBS s 1-800- m s.co SIB tion POS Applica p@harri A R FO Central centap call r email: o DG526, DG527, DG528, DG529 Analog CMOS Latchable Multiplexers Features Description • Direct RESET
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DG526,
DG527,
DG528,
DG529
DG529
16-Channel/Dual
DG526
DG526CJ
DG527 equivalent
DG526
DG526AK
DG526BK
DG526BY
DG526CK
DG527
DG528
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Untitled
Abstract: No abstract text available
Text: Surface Mount Voltage Variable Equalizer Ω to i • Adjustable attenuation slope • IP3 +45 dBm typical • Minimal deviation from linear loss, ± 0.4dB ro uct CASE STYLE: HE1354 r i w The VAEQ-1000+ is a 50Ω Voltage Variable Equalizer built into a shielded case. size of .394”x.394”x.150”
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HE1354
VAEQ-1000+
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Untitled
Abstract: No abstract text available
Text: Surface Mount Voltage Variable Equalizer Ω to i • Adjustable attenuation slope • IP3 +45 dBm typical • Minimal deviation from linear loss, ± 0.4dB ro uct CASE STYLE: HE1354 r i w The VAEQ-1000+ is a 50Ω Voltage Variable Equalizer built into a shielded case. size of .394”x.394”x.150”
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HE1354
VAEQ-1000+
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Untitled
Abstract: No abstract text available
Text: K Hz DC MA RES XI IST MU A M NC (O E hm CU s) RR MA E N XI T MU R M ATI (A NG m ps ) TE S FR T EQ UE NC Y IN D (µ UCT H) A ± NC 20 E % Shielded Surface Mount Inductors NU MB ER * SPD62R SPD62 DA SH Series SERIES SPD62 Millimeters 6.2 ± 0.3 6.6 ± 0.3
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SPD62R
SPD62
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472K
Abstract: 824k P1330
Text: DC MA RES XI IST MU A M NC O E HM S CU R MA RE X. NT (m RA A TI DC NG ) IN CR CU EM RR EN EN TA T L (m A DC ) IN D ±1 UCT 0% A @ NCE 1 K (µ Hz H) Surface Mount Power Inductors NU MB ER * P1330R P1330 DA SH Series POWER INDUCTORS SERIES P1330 FERRITE CORE
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P1330R
P1330
P1330
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-122K
-152K
-182K
-222K
-272K
-332K
472K
824k
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824k
Abstract: P1330
Text: DC MA RES XI IST MU A M NC O E HM S CU R MA RE X. NT (m RA A TI DC NG ) IN CR CU EM RR EN EN TA T L (m A DC ) IN D ±1 UCT 0% A @ NCE 1 K (µ Hz H) Surface Mount Power Inductors NU MB ER * P1330R P1330 DA SH Series POWER INDUCTORS SERIES P1330 FERRITE CORE
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P1330R
P1330
P1330
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-122K
-152K
-182K
-222K
-272K
-332K
824k
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472K
Abstract: 223K 268.3 P1812
Text: DC MA RES XI IST MU A M NC O E HM S CU R MA RE X. NT (m RA A TI DC NG ) IN CR CU EM RR EN EN TA T L (m A DC ) Surface Mount Power Inductors IN D ±1 UCT 0% A @ NCE 1 K (µ Hz H) NU MB ER * P1812R P1812 DA SH Series POWER INDUCTORS SERIES P1812 Physical Parameters
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P1812R
P1812
-102K
-122K
-152K
-182K
472K
223K
268.3
P1812
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242M
Abstract: No abstract text available
Text: K Hz DC MA RES XI IST MU A M NC (O E hm CU s) RR MA E N XI T MU R M ATI (A NG m ps ) TE S FR T EQ UE NC Y IN D (µ UCT H) A ± NC 20 E % Shielded Surface Mount Inductors NU MB ER * SPD62R SPD62 DA SH Series SERIES SPD62 Millimeters 6.2 ± 0.3 6.6 ± 0.3
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SPD62R
SPD62
242M
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Untitled
Abstract: No abstract text available
Text: K Hz DC MA RES XI IST MU A M NC (O E hm CU s) RR MA E N XI T MU R M ATI (A NG m ps ) TE S FR T EQ UE NC Y IN D (µ UCT H) A ± NC 20 E % Shielded Surface Mount Inductors NU MB ER * SPD73R&SPD74R SPD73&SPD74 DA SH Series POWER INDUCTORS SERIES SPD73 Physical Parameters
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SPD73R
SPD74R
SPD73
SPD74
SPD73
SPD74)
SPD73)
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BFR96S
Abstract: 6852 d TRANSISTOR lc 945 p transistor BFr96s philips bfr96s scattering lc 945 p transistor NPN transistor a 1707 lc 945 transistor B 557 PNP TRANSISTOR transistor B 764
Text: Prod uct specification Philips S em iconductors -T < S /'2 - 3 c NPN 5 GHz wideband transistor HILIPS INTERNATIONAL DESCRIPTION 5LE 711002b BFR96S 0043704 253 H P H I N PINNING NPN transistor in a plastic SOT37 envelope primarily intended for MATV applications. The device
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BFR96S
711002b
004S7Ã
11PHIN
BFQ32S.
BFR96S
6852 d TRANSISTOR
lc 945 p transistor
BFr96s philips
bfr96s scattering
lc 945 p transistor NPN
transistor a 1707
lc 945 transistor
B 557 PNP TRANSISTOR
transistor B 764
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Untitled
Abstract: No abstract text available
Text: _ CELERÍTEK 9 CMM2320 P ro d uct Inform ation M arch 1996 iof5 2.4 to 2.5 GHz 1 Watt Power Amplifier Features □ 30% Power Added Efficiency □ >30 dBm Output Power □ Low Distortion □ SOIC-8 Surface Mount Package □ Low Cost Functional Block Diagram
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CMM2320
CMM2320
1T74S03
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CY37128
Abstract: CY37128V
Text: CY37128V PRELIMINARY i k v / kv, UltraLogicT M 3.3V 128-Macrocell ISR CLPD Features — tpD = ns — ts = 5.5 ns • 128 m a cro c ells in eig h t logic blocks — tc o = 6.5 ns • 3.3V In-S ystem R eprog ram m ab le™ IS R ™ • P ro d uct-term clocking
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CY37128V
128-Macrocell
CY37128
CY37128V
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Untitled
Abstract: No abstract text available
Text: HFA3101 Semiconductor September 1998 File Number 3663.4 Gilbert Cell UHF Transistor Array Features T he HFA3101 is an all NPN tra n sisto r array con fig u re d as a • High G ain B andw idth P rod uct f j .10G Hz M u ltiplier Cell. Based on H arris bo nded w a fe r UHF-1 SO I
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HFA3101
HFA3101
1340nm
1320nm
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