Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    UA 554 BR Search Results

    UA 554 BR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: D4KB05 thru D4KB10 GLASS PASSIVATED REVERSE VOLTAGE FORWARD CURRENT BRIDGE RECTIFIERS - 50 to 1000Volts - 4.0 Amperes D3K FEATURES ● Glass passivated chip junction .057 1.45 R2 ● High case dielectric strength .130(3.3) .114(2.9) .110(2.8) .094(2.4) .555(14.1)


    Original
    D4KB05 D4KB10 1000Volts UL-94 22-Aug-2013 PDF

    Untitled

    Abstract: No abstract text available
    Text: D4KB05 thru D4KB10 GLASS PASSIVATED REVERSE VOLTAGE FORWARD CURRENT BRIDGE RECTIFIERS - 50 to 1000Volts - 4.0 Amperes D3K FEATURES ● Glass passivated chip junction .057 1.45 R2 ● High case dielectric strength .130(3.3) .114(2.9) .110(2.8) .094(2.4) .555(14.1)


    Original
    D4KB05 D4KB10 1000Volts UL-94 30-Dec-2011 PDF

    TLMG1100-GS08

    Abstract: TLMP1100-GS08 TLMO1100-GS08 TLMG1100GS08
    Text: TLMS1100, TLMO1100, TLMY1100, TLMG1100, TLMP1100, TLMB1100 www.vishay.com Vishay Semiconductors Standard 0603 SMD LED FEATURES • Smallest SMD package 0603 with exceptional brightness 1.6 mm x 0.8 mm x 0.6 mm L x W x H • High reliability lead frame based


    Original
    TLMS1100, TLMO1100, TLMY1100, TLMG1100, TLMP1100, TLMB1100 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. TLMG1100-GS08 TLMP1100-GS08 TLMO1100-GS08 TLMG1100GS08 PDF

    Untitled

    Abstract: No abstract text available
    Text: TLMS1100, TLMO1100, TLMY1100, TLMG1100, www.vishay.com Vishay Semiconductors Standard 0603 SMD LED FEATURES • Smallest SMD package 0603 with exceptional brightness 1.6 mm x 0.8 mm x 0.6 mm L x W x H • High reliability lead frame based • Temperature range -40 °C to +100 °C


    Original
    TLMS1100, TLMO1100, TLMY1100, TLMG1100, 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: TLMS1100, TLMO1100, TLMY1100, TLMG1100, TLMP1100, TLMB1100 www.vishay.com Vishay Semiconductors Standard 0603 SMD LED FEATURES • Smallest SMD package 0603 with exceptional brightness 1.6 mm x 0.8 mm x 0.6 mm L x W x H • High reliability lead frame based


    Original
    TLMS1100, TLMO1100, TLMY1100, TLMG1100, TLMP1100, TLMB1100 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A PDF

    Untitled

    Abstract: No abstract text available
    Text: TLMS1100, TLMO1100, TLMY1100, TLMG1100, TLMP1100, TLMB1100 www.vishay.com Vishay Semiconductors Standard 0603 SMD LED FEATURES • Smallest SMD package 0603 with exceptional brightness 1.6 mm x 0.8 mm x 0.6 mm L x W x H • High reliability lead frame based


    Original
    TLMS1100, TLMO1100, TLMY1100, TLMG1100, TLMP1100, TLMB1100 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A PDF

    Untitled

    Abstract: No abstract text available
    Text: Z-Power LED X10490 Technical Data Sheet Specification UPGT801-S SSC Drawn Approval CUSTOMER Approval Rev. 00 September 2010 www.seoulsemicon.com Document No. : SSC-QP-7-07-24 Rev.00 Z-Power LED X10490 Technical Data Sheet UPGT801-S 1. Features 2. Absolute Maximum Ratings


    Original
    X10490 UPGT801-S SSC-QP-7-07-24 PDF

    Transient voltage suppressors

    Abstract: DIODE 1n6294a diode 1n6285A 1N6275 1,5ke15 diode 1n6278A
    Text: 1.5KE6.8 thru 1.5KE440CA and 1N6267 thru 1N6303A Transient Voltage Suppressors Peak Pulse Power 1500W Breakdown Voltage 6.8 to 440V Features ‹ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ‹ Glass passivated junction ‹ 1500W peak pulse power capabililty on 10/1000us waveform,


    Original
    5KE440CA 1N6267 1N6303A 10/1000us 265oC/10 MIL-STD-750, Transient voltage suppressors DIODE 1n6294a diode 1n6285A 1N6275 1,5ke15 diode 1n6278A PDF

    Untitled

    Abstract: No abstract text available
    Text: Z-Power LE DX10490 Technical Data Sheet Spe cifica t ion UPGT8 0 1 - S SSC Drawn Approval CUSTOMER Approval Re v. 0 0 Se pt e m be r 2 0 1 0 w w w .se oulse m icon .com Document No. : SSC-QP-7-07-24 Rev.00 Z-Power LE DX10490 Technical Data Sheet UPGT8 0 1 - S


    Original
    X10490 SSC-QP-7-07-24 PDF

    MB88F332

    Abstract: apix IC201-001 CU80F Cu80 FPT-208P-M06 MB88F33
    Text: FUJITSU SEMICONDUCTOR MB88F332 FLASH Memory Product Parallel Writer Specification Ver.1.0 FUJITSU MICROELECTRONICS LIMITED 【Revision History】 Ver. 1.0 Data 2008/12/16 Description First Editinon 【Overview】 Items Detail Product name MB88F332 FLASH memory size


    Original
    MB88F332 160KB 58000H FPT-208P-M06 IC201-001 CU80F MB88F332 apix IC201-001 CU80F Cu80 FPT-208P-M06 MB88F33 PDF

    HALL 550

    Abstract: 550 WG9 signal hall sensor 550 wg9
    Text: EW-450, EW-550 UNIPOLAR HALL EFFECT SWITCHES Note : It is requested to read and accept "IMPORTANT NOTICE" written on the back of the front cover of this catalogue. ASAHI HALL EFFECT ICs ASAHI KASEI ELECTRONICS Hall Effect ICs are composed of a Ultla-high sensitive InSb Hall element and a signal processing IC


    Original
    EW-450, EW-550 EW-450 EW-550 500pcs EW-450 5000pcs HALL 550 550 WG9 signal hall sensor 550 wg9 PDF

    Untitled

    Abstract: No abstract text available
    Text: SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR BSR30 ISSUE* -JUNE 1996_ O_ C O M PLEM EN TA R Y T Y P E - BSR40 PARTM ARKIN G D E T A IL - BR1 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -70 V Collector-Emitter Voltage


    OCR Scan
    BSR30 BSR40 -150mA, -15mA -500mA, -50mA -100nA, -100mA, -500mA -50mA, PDF

    KBU401

    Abstract: KBU402 KBU403 KBU404 KBU405 KBU406 KBU407
    Text: FCI Semiconductor Preliminary Data Sheet KBU401.407 series 4.0 AMP Single Phase Silicon Bridge Mechanical Dimensions Description KBU401.407 series KBU401.407 series .280 •260 .205 .106 —II-.0S2 Features O O O O O Compact Size Low Leakage Low Cost Construction


    OCR Scan
    KBU401. KBU401 KBU402 KBU403 KBU404 KBU405 KBU406 KBU407 PDF

    Untitled

    Abstract: No abstract text available
    Text: B 41 554 Capacitors with Screw Terminals SIKOREL 125, LL Grade Maximum reliability For highly professional switch-mode power supplies and capacitor banks Operating temperatures up to 125 °C Construction • Charge-discharge proof, polar • Aluminum case with insulating sleeve


    OCR Scan
    KAL0272-T fl23SL 007421D fl235b05 D074211 PDF

    BS208

    Abstract: MB8075
    Text: Philips Components Data sheet status Product specification date of issue February 1991 BS208 P-channel enhancement mode vertical D-MOS transistor PIN CONFIGURATION FEATURES • Direct interface to C-MOS • High-speed switching • No secondary breakdown.


    OCR Scan
    BS208 aTO-92 MB8075 iz7os34 003L011 BS208 MB8075 PDF

    55461HM

    Abstract: 55461RM 75461RC 75461TC 55461 75461 fairchild 55461 c
    Text: 55/75460 • 55/75461 • 55/75462 55/75463 • 55/75464 DUAL HIGH VOLTAGE HIGH CURRENT'PERIPHERAL DRIVERS FAIRCHILD LINEAR I N T E G R A T E D CI RC UIT S G E N E R A L D E S C R IP T IO N — The 5 5 /7 5 4 6 0 Peripheral Driver Series converts T T L and D T L logic levels to H IG H voltage, H IG H current levels. The


    OCR Scan
    VS-10 55461HM 55461RM 75461RC 75461TC 55461 75461 fairchild 55461 c PDF

    Untitled

    Abstract: No abstract text available
    Text: • International Rectifier Data Sheet No. PD-6.078 IR 04 H420 HIGH VOLTAGE HALF-BRIDGE Features • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Output Power MOSFETs in half-bridge configuration 500V Rated Breakdown Voltage High side gate drive designed for bootstrap operation


    OCR Scan
    IR0430 5M-1982. PDF

    75462TC

    Abstract: 75462 55462HM 75462HC 75462RC 55462
    Text: 55/75460 • 55/75461 • 55/75462 55/75463 • 55/75464 DUAL HIGH VOLTAGE HIGH CURRENT'PERIPHERAL DRIVERS FAIRCHILD LINEAR INTEGRATED CIRCUITS G E N E R A L D E S C R IP T IO N — The 5 5 /7 5 4 6 0 Peripheral Driver Series converts T T L and D T L logic levels to H IG H voltage, H IG H current levels. The


    OCR Scan
    PDF

    Lpp 97

    Abstract: transil 428 54-135
    Text: transient voltage suppressors «TRANSIL» íí diodes de protection «TRANSIL» THOMSON-CSF 'R M @ V r m t»A 2,5 KW G LT G LT G LT G LT / 12 24 47 120 V) m in 12 24 47 120 m ax nom 350 W 1 ms expo. 5 5 5 5 @ V(BR>* (V) U nidirectional typ es / 15 30 60


    OCR Scan
    CB-33) Lpp 97 transil 428 54-135 PDF

    s51 Optocoupler

    Abstract: LA12 NSL-32 500AH NSL32
    Text: NSL-32 i|LON€X Optocoupler Features * * * 5.7 nin. Compact, moisture resistant package Low LED current Passive resistance output 25A min. Anode lead 0.25x0.51 Photocell 2.54 Description This optocoupler consists o f a r LED input optically coupled to a photocell. The photocell resistance is


    OCR Scan
    NSL-32 26CTC 100Kii 514-75B-ADD0 5K-76S-SSB9 s51 Optocoupler LA12 NSL-32 500AH NSL32 PDF

    N5L-32B-100

    Abstract: Photocell LA12 NSL-32B-102 NSL-32B-103 NSL-32B-104
    Text: N5L-32B-100 Series SÏLONEX Opto couplers Features * * * Compact, moisture resistant package Low LED current Passive resistance output Description This optoccupler consists o f a r LED input optically coupled to a photocell. The photocell resistance is high when the LED current is "off: and low 'Mien the


    OCR Scan
    N5L-32B-100 26CTC NSL-32B-1Q1 NSL-32B-102 NSL-32B-103 NSL-32B-104 514-75B-ADD0 5K-76S-SSB9 Photocell LA12 PDF

    SC08-11HWA

    Abstract: SA08-11 SC08-13 "pin compatible" FX08-11EWA 12EWA SA08-11HWA LT/SG3527A SA08-12 SA08-13 SC08-11
    Text: 20mm 0.8INCH SINGLE DIGIT NUMERIC DISPLAYS SA08-11 SC08-11 SA08-12 SC08-12 SA08-13 . SC08-13 SA08-21 SC08-21 FX08-11 Features Description •0.8 INCH DIGIT HEIGHT. The Bright Red source color devices are made with Gallium •LOW CURRENT OPERATION. Phosphide Red Light Emitting Diode.


    OCR Scan
    SA08-11 SC08-11 FX08-11 SA08-12 SC08-12 SA08-13 SC08-13 SA08-21 SC08-21 SA08-1 SC08-11HWA SC08-13 "pin compatible" FX08-11EWA 12EWA SA08-11HWA LT/SG3527A SA08-13 PDF

    transistor c925

    Abstract: DIODE C921
    Text: P D - 9.1142 International [ËjüRectffier IRGBC30KD2-S Short Circuit Rated UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • Short circuit rated -10ns @125°C, VGe = 15V Switching-loss rating includes all "tail" losses


    OCR Scan
    IRGBC30KD2-S -10ns D020717 SMD-220 C-928 transistor c925 DIODE C921 PDF

    2SD1378

    Abstract: No abstract text available
    Text: 2SD1378 h i 7 > v 7 .$ / T ransistors 2SD1378 y 'J 3 > h 7 > y 7 ^ U k M y & W t ^ Ifffl/L o w Freq. Power Amp. Epitaxial Planar NPN Silicon Transistor • • fl.JfjT|-;±|l/Dimensions Unit: mm) 1) V c e o =80V, T —x 2) V c eo = Pc = 1 0 W 2 T 7 " T T K 7 "f A t* 5 g „


    OCR Scan
    2SD1378 2SB1007. 2SD1378 PDF