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    UA 3456 Search Results

    UA 3456 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    345-6007-064 Amphenol Communications Solutions GbX ,Backplane connectors,4 pair, 7 position, right, 4.55mm, Header Visit Amphenol Communications Solutions
    345-6007-C65 Amphenol Communications Solutions GbX ,Backplane connectors,4 pair, 7 position, right, C-Key, 5.55mm, Header Visit Amphenol Communications Solutions
    345-6007-G63 Amphenol Communications Solutions GbX ,Backplane connectors,4 pair, 7 position, right, G-Key, 3.55mm, Header Visit Amphenol Communications Solutions
    345-6010-A64 Amphenol Communications Solutions GbX ,Backplane connectors,4 pair, 10 position, right, A-Key, 4.55mm, Header Visit Amphenol Communications Solutions
    345-6010-D65 Amphenol Communications Solutions GbX ,Backplane connectors,4 pair, 10 position, right, D-Key, 5.55mm, Header Visit Amphenol Communications Solutions

    UA 3456 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    lm317 so-8

    Abstract: lm337 so-8 LM337 TO-92 lm350 so-8 lm317 SO-8 Datasheet DFN 3.3X3.3 SC82AB-4 sot-23-5 321 Silica Semiconductors LM337 LM317
    Text: Single Output Low-Dropout Linear Regulators LDOs Device MC33761 Iout Dropout* (typ) Iq* (typ) PSRR* Absolute Max Input Voltage 80 mA 160 mV 180 A 85 dB 12 V Package(s)-pins Vout Features SOT-23-5 2.5, 2.8, 2.9, 3, 5 V Ulta Low Iq Enable, Ultra Low Noise


    Original     		PDF MC33761 OT-23-5 MC78LCxx OT-23-5, OT-89-3 NCP502 SC-70-5 NCP512 NCP553 lm317 so-8 lm337 so-8 LM337 TO-92 lm350 so-8 lm317 SO-8 Datasheet DFN 3.3X3.3 SC82AB-4 sot-23-5 321 Silica Semiconductors LM337 LM317

    NCP1522

    Abstract: NCP1521 NUF2030 transistor 669A SOT-23-5 PWM NUF2030XV6 ncp1400asn50 NCP5005 NCP1500 NCP1501
    Text: Low Profile, Small Footprint Packaging ON Semiconductor offers the latest in low-profile, small-outline packaging. We enable the design and production of ultra-thin end-user products for the consumer market, by manufacturing some of the lowest profile packaging


    Original     		PDF OT-553, BRD8026-2 BRD8026/D NCP1522 NCP1521 NUF2030 transistor 669A SOT-23-5 PWM NUF2030XV6 ncp1400asn50 NCP5005 NCP1500 NCP1501

    cpn 2222

    Abstract: C42CD d68a
    Text: 1 2345678959ABCDE81 Surface - Mount Ambient Light Sensor 123456278 2 ‧34567285289729ABCD27E7F62765D672 ‧Low sensitivity variation across various light sources8 ‧7C8D287B7C8A7275BCD72 32852 32 ‧726A4E2548C72CD72 !"2852!"2


    Original     		PDF 2345678959ABCDE81 34567285289729ABCD27E7F62 5D672 CD82CD 927A6BC4BDE8 1356-422B/ 654A8 92C628972B5/ 95D762CD 3A7285289729 cpn 2222 C42CD d68a

    h7cs

    Abstract: No abstract text available
    Text: eorex EM42AM3284LBC Revision History Revision 0.1 Mar. 2008 - First release. Revision 0.2 (Jun. 2009). - Add Extend Temperature Grade (-25°C ~85°C) product. - Add IDD6 “PASR” Spec.(page 8) Jun. 2009 www.eorex.com 1/24 eorex EM42AM3284LBC 512Mb (4Mx4Bank×32)


    Original     		PDF EM42AM3284LBC 512Mb h7cs

    EM42AM3284LBA

    Abstract: EM42AM3284LBA-75F
    Text: eorex EM42AM3284LBA Revision History Revision 0.1 Oct. 2006 - First release. Revision 0.2 (Oct. 2007). - Modify ball size spec from 0.5mm to 0.45mm. Revision 0.3 (Jan. 2008). - add 166/333Mhz @CL3 speed. Revision 0.4 (Mar. 2008). - Add IDD6 “PASR” Spec.(page 7)


    Original     		PDF EM42AM3284LBA 166/333Mhz 512Mb EM42AM3284LBA EM42AM3284LBA-75F

    Untitled

    Abstract: No abstract text available
    Text: TO PIDSA HQ DELIVERY SPECIFICATIONS Orderer Customer Part Number Panasonic Global Part Number Vendor Issue Number AN41908A-VB 1203027 ORDERER (CUSTOMER) Confirmation of Security Control We confirm and certify that the products of these specifications shall not be supplied so as to be used for Military Purpose (defined herein


    Original     		PDF AN41908A-VB QFN044-P-0606D

    Untitled

    Abstract: No abstract text available
    Text: Surface - Mount Ambient Light Sensor 12345678497ABC27DDC6EF 123456278 2 ‧34567287695A6BC74D2E52EF72FA27D72697E82 ‧BFE2E523887AE2A4525E9E2 ‧ ‧


    Original     		PDF 12345678497ABC27DDC6EF 34567287695A6BC74D2E52EF72F A27D72697 FE2E523 887AE E24BA7 72B44 EB5A28 267A6BEBCBED2C 85662C

    Untitled

    Abstract: No abstract text available
    Text: ACE8212B Common Dual N-Channel Enhancement Mode Field Effect Transistor with ESD Description The ACE8212B uses advanced trench technology to provide excellent RDS ON and low gate charge. They offer operation over a wide gate drive range from 1.8V to 12V. It is ESD protected. This device is


    Original     		PDF ACE8212B ACE8212B

    Untitled

    Abstract: No abstract text available
    Text: ACE8212B Common Drain N-Channel Enhancement Mode Field Effect Transistor with ESD Description The ACE8212B uses advanced trench technology to provide excellent RDS ON and low gate charge. They offer operation over a wide gate drive range from 1.8V to 12V. It is ESD protected. This device is


    Original     		PDF ACE8212B ACE8212B

    SM16200C

    Abstract: No abstract text available
    Text: IS42SM16200C IS42RM16200C IS42VM16200C 1M x 16Bits x 2Banks Low Power Synchronous DRAM Description These IS42SM/RM/VM16200C are low power 33,554,432 bits CMOS Synchronous DRAM organized as 2 banks of 1,048,576 words x 16 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs


    Original     		PDF IS42SM16200C IS42RM16200C IS42VM16200C 16Bits IS42SM/RM/VM16200C -40oC 2Mx16 IS42VM16200C-6BLI IS42VM16200C-75BLI 54-ball SM16200C

    PD65625

    Abstract: PD65654 V30MZC PD65808 V30MX PD65875 PD65842 PD65841 CMOS-N5 PD65802
    Text: CD-ROM版セミカスタム IC CD-ROM X13769XJ2V0CD00 05−1 セミカスタム IC NECのASIC • ASICとは？（1/2） LSIは大きく，汎用LSIと特定用途向けLSI （ASIC：Application Specific IC） とに分けられます。 汎用LSIは， メーカ側で独自に設計し標準のLSIとして市販されているLSIです。各ユーザの使用量は少なくても大


    Original     		PDF X13769XJ2V0CD00 PD681× 114ps 169ps 864ps 35mASIC 10GHz, PD65625 PD65654 V30MZC PD65808 V30MX PD65875 PD65842 PD65841 CMOS-N5 PD65802

    SM32100C

    Abstract: VM321 IS42SM32100C
    Text: IS42SM32100C IS42RM32100C IS42VM32100C 512K x 32Bits x 2Banks Low Power Synchronous DRAM Description These IS42SM/RM/VM32100C are low power 33,554,432 bits CMOS Synchronous DRAM organized as 2 banks of 524,288 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs


    Original     		PDF IS42SM32100C IS42RM32100C IS42VM32100C 32Bits IS42SM/RM/VM32100C -40oC 1Mx32 IS42VM32100C-6BLI IS42VM32100C-75BLI 90-ball SM32100C VM321

    Untitled

    Abstract: No abstract text available
    Text: I S42SM32100C I S42RM32100C I S42VM32100C 512K x 32Bits x 2Banks Low Power Synchronous DRAM Description These IS42SM/RM/VM32100C are low power 33,554,432 bits CMOS Synchronous DRAM organized as 2 banks of 524,288 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs


    Original     		PDF S42SM32100C S42RM32100C S42VM32100C 32Bits IS42SM/RM/VM32100C M32100C-6BLI 90-ball IS42VM32100C-75BLI 1Mx32

    IS42SM16200C

    Abstract: IS42SM
    Text: IS42SM16200C IS42RM16200C IS42VM16200C Advanced Information 1M x 16Bits x 2Banks Low Power Synchronous DRAM Description These IS42SM/RM/VM16200C are low power 33,554,432 bits CMOS Synchronous DRAM organized as 2 banks of 1,048,576 words x 16 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs


    Original     		PDF IS42SM16200C IS42RM16200C IS42VM16200C 16Bits IS42SM/RM/VM16200C IS42VM16200C-6BLI 54-ball IS42VM16200C-75BLI -40oC IS42SM16200C IS42SM

    Untitled

    Abstract: No abstract text available
    Text: I S42SM16200C I S42RM16200C I S42VM16200C 1M x 16Bits x 2Banks Low Power Synchronous DRAM Description These IS42SM/RM/ VM16200C are low power 33,554,432 bits CMOS Synchronous DRAM organized as 2 banks of 1,048,576 words x 16 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs


    Original     		PDF S42SM16200C S42RM16200C S42VM16200C 16Bits IS42SM/RM/ VM16200C M16200C-6BLI 54-ball IS42VM16200C-75BLI

    transistor 13001 s 6b

    Abstract: No abstract text available
    Text: June 12th, 2012 Automotive Grade AUIRS212 7,71,8,81 S Over Current Protected Single Channel Driver Features • • • • • • • • • • • • Floating channel designed for bootstrap operation Fully operational to +600 V Tolerant to negative transient voltage – dV/dt immune


    Original     		PDF AUIRS212 AUIRS2127/AUIRS2128) AUIRS21271/AUIRS21281) AUIRS2127/AUIRS21271) AUIRS2128/AUIRS21281) transistor 13001 s 6b

    IS42RM32400G

    Abstract: No abstract text available
    Text: IS42SM/RM/VM32400G Advanced Information 1M x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42SM/RM/VM32400G are mobile 134,217,728 bits CMOS Synchronous DRAM organized as 4 banks of 1,048,576 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs


    Original     		PDF IS42SM/RM/VM32400G 32Bits IS42SM/RM/VM32400G -40oC 4Mx32 IS42SM32400G-6BLI IS42SM32400G-75BLI 90-ball IS42RM32400G

    SM32400G

    Abstract: IS42SM32400G-75BI is42sm32400g 4Mx32 BGA VM32400G IS42VM32400G-75BLI IS42RM32400G-75BI IS42RM32400G
    Text: IS42/45SM/RM/VM32400G 1M x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45SM/RM/VM32400G are mobile 134,217,728 bits CMOS Synchronous DRAM organized as 4 banks of 1,048,576 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs


    Original     		PDF IS42/45SM/RM/VM32400G 32Bits IS42/45SM/RM/VM32400G IS42SM32400G-6BLI IS42SM32400G-75BLI IS42SM32400G-75BI 90-ball -40oC SM32400G is42sm32400g 4Mx32 BGA VM32400G IS42VM32400G-75BLI IS42RM32400G-75BI IS42RM32400G

    SM16800G

    Abstract: IS42SM16800G-75BI IS42VM16800G-75BI IS42SM16800G IS42VM16800G-75BL IS42SM16800G-75BLI IS42RM16800G
    Text: IS42/45SM/RM/VM16800G 2M x 16Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45SM/RM/VM16800G are mobile 134,217,728 bits CMOS Synchronous DRAM organized as 4 banks of 2,097,152 words x 16 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs


    Original     		PDF IS42/45SM/RM/VM16800G 16Bits IS42/45SM/RM/VM16800G IS42SM16800G-6BLI IS42SM16800G-75BLI IS42SM16800G-75BI 54-ball -40oC SM16800G IS42VM16800G-75BI IS42SM16800G IS42VM16800G-75BL IS42RM16800G

    is42sm

    Abstract: IS42SM16800G-75BLI IS42SM16800G IS42RM16800G
    Text: IS42SM/RM/VM16800G Advanced Information 2M x 16Bits x 4Banks Mobile Synchronous DRAM Description These IS42SM/RM/VM16800G are mobile 134,217,728 bits CMOS Synchronous DRAM organized as 4 banks of 2,097,152 words x 16 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs


    Original     		PDF IS42SM/RM/VM16800G 16Bits IS42SM/RM/VM16800G -40oC 8Mx16 IS42SM16800G-6BLI IS42SM16800G-75BLI 54-ball is42sm IS42SM16800G IS42RM16800G

    IS42RM16800G

    Abstract: No abstract text available
    Text: I S42/ 45SM/ RM/ VM16800G 2M x 16Bits x 4Banks Mobile Synchronous DRAM Description These I S42/ 45SM/ RM/VM16800G are mobile 134,217,728 bits CMOS Synchronous DRAM organized as 4 banks of 2,097,152 words x 16 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs


    Original     		PDF VM16800G 16Bits RM/VM16800G 8Mx16 IS42RM16800G-6BLI 54-ball IS42RM16800G-75BLI IS42RM16800G-75BI IS42RM16800G

    IS42RM32400G

    Abstract: No abstract text available
    Text: I S42/ 45SM/ RM/ VM32400G 1M x 32Bits x 4Banks Mobile Synchronous DRAM Description These I S42/ 45SM/ RM/VM32400G are mobile 134,217,728 bits CMOS Synchronous DRAM organized as 4 banks of 1,048,576 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs


    Original     		PDF VM32400G 32Bits RM/VM32400G 4Mx32 IS42RM32400G-6BLI 90-ball IS42RM32400G-75BLI IS42RM32400G-75BI IS42RM32400G

    ifr 4000

    Abstract: marker beacon receiver 6041-5680-800 1002-5600-4C0 Types of Radar Antenna ion lithium battery ev Beacon ELT 406 ES 5106 V ED62 diode 1002-5600-8P0
    Text: NAV/COMM Test Set IFR 4000 Operation Manual Issue-2 EXPORT CONTROL WARNING: This document contains controlled technology or technical data under the jurisdiction of the Export Administration Regulations EAR , 15 CFR 730-774. It cannot be transferred to any foreign third party without the specific prior approval of the U.S. Department


    Original     		PDF

    DO-213AA

    Abstract: No abstract text available
    Text: Zener Regulator Diodes Part Number Microsemi Division Package Outline Micmsemi Data Vz Power Type Mil i i i i i l Spec Sheet IC W I (V) (zt • |mA) n-;f Zzt (fl) Zzk (f i) IR (uA) VR (V) 1.5 2 220 280 280 280 330 330 330 330 330 330 350 800 800 370 370


    OCR Scan     		PDF DO-35 DO-213AA