lm317 so-8
Abstract: lm337 so-8 LM337 TO-92 lm350 so-8 lm317 SO-8 Datasheet DFN 3.3X3.3 SC82AB-4 sot-23-5 321 Silica Semiconductors LM337 LM317
Text: Single Output Low-Dropout Linear Regulators LDOs Device MC33761 Iout Dropout* (typ) Iq* (typ) PSRR* Absolute Max Input Voltage 80 mA 160 mV 180 A 85 dB 12 V Package(s)-pins Vout Features SOT-23-5 2.5, 2.8, 2.9, 3, 5 V Ulta Low Iq Enable, Ultra Low Noise
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MC33761
OT-23-5
MC78LCxx
OT-23-5,
OT-89-3
NCP502
SC-70-5
NCP512
NCP553
lm317 so-8
lm337 so-8
LM337 TO-92
lm350 so-8
lm317 SO-8 Datasheet
DFN 3.3X3.3
SC82AB-4
sot-23-5 321
Silica Semiconductors
LM337 LM317
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NCP1522
Abstract: NCP1521 NUF2030 transistor 669A SOT-23-5 PWM NUF2030XV6 ncp1400asn50 NCP5005 NCP1500 NCP1501
Text: Low Profile, Small Footprint Packaging ON Semiconductor offers the latest in low-profile, small-outline packaging. We enable the design and production of ultra-thin end-user products for the consumer market, by manufacturing some of the lowest profile packaging
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OT-553,
BRD8026-2
BRD8026/D
NCP1522
NCP1521
NUF2030
transistor 669A
SOT-23-5 PWM
NUF2030XV6
ncp1400asn50
NCP5005
NCP1500
NCP1501
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cpn 2222
Abstract: C42CD d68a
Text: 1 2345678959ABCDE81 Surface - Mount Ambient Light Sensor 123456278 2 ‧34567285289729ABCD27E7F62765D672 ‧Low sensitivity variation across various light sources8 ‧7C8D287B7C8A7275BCD72 32852 32 ‧ 726A4E2 548C72CD72 ! "2852 ! "2
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2345678959ABCDE81
34567285289729ABCD27E7F62
5D672
CD82CD
927A6BC4BDE8
1356-422B/
654A8
92C628972B5/
95D762CD
3A7285289729
cpn 2222
C42CD
d68a
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PDF
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h7cs
Abstract: No abstract text available
Text: eorex EM42AM3284LBC Revision History Revision 0.1 Mar. 2008 - First release. Revision 0.2 (Jun. 2009). - Add Extend Temperature Grade (-25°C ~85°C) product. - Add IDD6 “PASR” Spec.(page 8) Jun. 2009 www.eorex.com 1/24 eorex EM42AM3284LBC 512Mb (4Mx4Bank×32)
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EM42AM3284LBC
512Mb
h7cs
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PDF
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EM42AM3284LBA
Abstract: EM42AM3284LBA-75F
Text: eorex EM42AM3284LBA Revision History Revision 0.1 Oct. 2006 - First release. Revision 0.2 (Oct. 2007). - Modify ball size spec from 0.5mm to 0.45mm. Revision 0.3 (Jan. 2008). - add 166/333Mhz @CL3 speed. Revision 0.4 (Mar. 2008). - Add IDD6 “PASR” Spec.(page 7)
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EM42AM3284LBA
166/333Mhz
512Mb
EM42AM3284LBA
EM42AM3284LBA-75F
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PDF
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Untitled
Abstract: No abstract text available
Text: TO PIDSA HQ DELIVERY SPECIFICATIONS Orderer Customer Part Number Panasonic Global Part Number Vendor Issue Number AN41908A-VB 1203027 ORDERER (CUSTOMER) Confirmation of Security Control We confirm and certify that the products of these specifications shall not be supplied so as to be used for Military Purpose (defined herein
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AN41908A-VB
QFN044-P-0606D
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Untitled
Abstract: No abstract text available
Text: Surface - Mount Ambient Light Sensor 12345678497ABC27DDC6EF 123456278 2 ‧34567287695A6BC74D2E52EF72FA27D72697E82 ‧BFE2E523887AE2A4525E9E2 ‧ ‧
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12345678497ABC27DDC6EF
34567287695A6BC74D2E52EF72F
A27D72697
FE2E523
887AE
E24BA7
72B44
EB5A28
267A6BEBCBED2C
85662C
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PDF
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Untitled
Abstract: No abstract text available
Text: ACE8212B Common Dual N-Channel Enhancement Mode Field Effect Transistor with ESD Description The ACE8212B uses advanced trench technology to provide excellent RDS ON and low gate charge. They offer operation over a wide gate drive range from 1.8V to 12V. It is ESD protected. This device is
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ACE8212B
ACE8212B
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Untitled
Abstract: No abstract text available
Text: ACE8212B Common Drain N-Channel Enhancement Mode Field Effect Transistor with ESD Description The ACE8212B uses advanced trench technology to provide excellent RDS ON and low gate charge. They offer operation over a wide gate drive range from 1.8V to 12V. It is ESD protected. This device is
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ACE8212B
ACE8212B
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SM16200C
Abstract: No abstract text available
Text: IS42SM16200C IS42RM16200C IS42VM16200C 1M x 16Bits x 2Banks Low Power Synchronous DRAM Description These IS42SM/RM/VM16200C are low power 33,554,432 bits CMOS Synchronous DRAM organized as 2 banks of 1,048,576 words x 16 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs
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IS42SM16200C
IS42RM16200C
IS42VM16200C
16Bits
IS42SM/RM/VM16200C
-40oC
2Mx16
IS42VM16200C-6BLI
IS42VM16200C-75BLI
54-ball
SM16200C
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PDF
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PD65625
Abstract: PD65654 V30MZC PD65808 V30MX PD65875 PD65842 PD65841 CMOS-N5 PD65802
Text: CD-ROM版セミカスタム IC CD-ROM X13769XJ2V0CD00 05−1 セミカスタム IC NECのASIC • ASICとは？（1/2） LSIは大きく，汎用LSIと特定用途向けLSI （ASIC：Application Specific IC） とに分けられます。 汎用LSIは， メーカ側で独自に設計し標準のLSIとして市販されているLSIです。各ユーザの使用量は少なくても大
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X13769XJ2V0CD00
PD681×
114ps
169ps
864ps
35mASIC
10GHz,
PD65625
PD65654
V30MZC
PD65808
V30MX
PD65875
PD65842
PD65841
CMOS-N5
PD65802
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PDF
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SM32100C
Abstract: VM321 IS42SM32100C
Text: IS42SM32100C IS42RM32100C IS42VM32100C 512K x 32Bits x 2Banks Low Power Synchronous DRAM Description These IS42SM/RM/VM32100C are low power 33,554,432 bits CMOS Synchronous DRAM organized as 2 banks of 524,288 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs
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IS42SM32100C
IS42RM32100C
IS42VM32100C
32Bits
IS42SM/RM/VM32100C
-40oC
1Mx32
IS42VM32100C-6BLI
IS42VM32100C-75BLI
90-ball
SM32100C
VM321
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Untitled
Abstract: No abstract text available
Text: I S42SM32100C I S42RM32100C I S42VM32100C 512K x 32Bits x 2Banks Low Power Synchronous DRAM Description These IS42SM/RM/VM32100C are low power 33,554,432 bits CMOS Synchronous DRAM organized as 2 banks of 524,288 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs
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S42SM32100C
S42RM32100C
S42VM32100C
32Bits
IS42SM/RM/VM32100C
M32100C-6BLI
90-ball
IS42VM32100C-75BLI
1Mx32
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IS42SM16200C
Abstract: IS42SM
Text: IS42SM16200C IS42RM16200C IS42VM16200C Advanced Information 1M x 16Bits x 2Banks Low Power Synchronous DRAM Description These IS42SM/RM/VM16200C are low power 33,554,432 bits CMOS Synchronous DRAM organized as 2 banks of 1,048,576 words x 16 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs
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IS42SM16200C
IS42RM16200C
IS42VM16200C
16Bits
IS42SM/RM/VM16200C
IS42VM16200C-6BLI
54-ball
IS42VM16200C-75BLI
-40oC
IS42SM16200C
IS42SM
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PDF
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|
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Untitled
Abstract: No abstract text available
Text: I S42SM16200C I S42RM16200C I S42VM16200C 1M x 16Bits x 2Banks Low Power Synchronous DRAM Description These IS42SM/RM/ VM16200C are low power 33,554,432 bits CMOS Synchronous DRAM organized as 2 banks of 1,048,576 words x 16 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs
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S42SM16200C
S42RM16200C
S42VM16200C
16Bits
IS42SM/RM/
VM16200C
M16200C-6BLI
54-ball
IS42VM16200C-75BLI
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transistor 13001 s 6b
Abstract: No abstract text available
Text: June 12th, 2012 Automotive Grade AUIRS212 7,71,8,81 S Over Current Protected Single Channel Driver Features • • • • • • • • • • • • Floating channel designed for bootstrap operation Fully operational to +600 V Tolerant to negative transient voltage – dV/dt immune
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AUIRS212
AUIRS2127/AUIRS2128)
AUIRS21271/AUIRS21281)
AUIRS2127/AUIRS21271)
AUIRS2128/AUIRS21281)
transistor 13001 s 6b
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IS42RM32400G
Abstract: No abstract text available
Text: IS42SM/RM/VM32400G Advanced Information 1M x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42SM/RM/VM32400G are mobile 134,217,728 bits CMOS Synchronous DRAM organized as 4 banks of 1,048,576 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs
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IS42SM/RM/VM32400G
32Bits
IS42SM/RM/VM32400G
-40oC
4Mx32
IS42SM32400G-6BLI
IS42SM32400G-75BLI
90-ball
IS42RM32400G
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PDF
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SM32400G
Abstract: IS42SM32400G-75BI is42sm32400g 4Mx32 BGA VM32400G IS42VM32400G-75BLI IS42RM32400G-75BI IS42RM32400G
Text: IS42/45SM/RM/VM32400G 1M x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45SM/RM/VM32400G are mobile 134,217,728 bits CMOS Synchronous DRAM organized as 4 banks of 1,048,576 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs
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IS42/45SM/RM/VM32400G
32Bits
IS42/45SM/RM/VM32400G
IS42SM32400G-6BLI
IS42SM32400G-75BLI
IS42SM32400G-75BI
90-ball
-40oC
SM32400G
is42sm32400g
4Mx32 BGA
VM32400G
IS42VM32400G-75BLI
IS42RM32400G-75BI
IS42RM32400G
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SM16800G
Abstract: IS42SM16800G-75BI IS42VM16800G-75BI IS42SM16800G IS42VM16800G-75BL IS42SM16800G-75BLI IS42RM16800G
Text: IS42/45SM/RM/VM16800G 2M x 16Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45SM/RM/VM16800G are mobile 134,217,728 bits CMOS Synchronous DRAM organized as 4 banks of 2,097,152 words x 16 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs
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IS42/45SM/RM/VM16800G
16Bits
IS42/45SM/RM/VM16800G
IS42SM16800G-6BLI
IS42SM16800G-75BLI
IS42SM16800G-75BI
54-ball
-40oC
SM16800G
IS42VM16800G-75BI
IS42SM16800G
IS42VM16800G-75BL
IS42RM16800G
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PDF
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is42sm
Abstract: IS42SM16800G-75BLI IS42SM16800G IS42RM16800G
Text: IS42SM/RM/VM16800G Advanced Information 2M x 16Bits x 4Banks Mobile Synchronous DRAM Description These IS42SM/RM/VM16800G are mobile 134,217,728 bits CMOS Synchronous DRAM organized as 4 banks of 2,097,152 words x 16 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs
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IS42SM/RM/VM16800G
16Bits
IS42SM/RM/VM16800G
-40oC
8Mx16
IS42SM16800G-6BLI
IS42SM16800G-75BLI
54-ball
is42sm
IS42SM16800G
IS42RM16800G
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PDF
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IS42RM16800G
Abstract: No abstract text available
Text: I S42/ 45SM/ RM/ VM16800G 2M x 16Bits x 4Banks Mobile Synchronous DRAM Description These I S42/ 45SM/ RM/VM16800G are mobile 134,217,728 bits CMOS Synchronous DRAM organized as 4 banks of 2,097,152 words x 16 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs
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VM16800G
16Bits
RM/VM16800G
8Mx16
IS42RM16800G-6BLI
54-ball
IS42RM16800G-75BLI
IS42RM16800G-75BI
IS42RM16800G
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PDF
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IS42RM32400G
Abstract: No abstract text available
Text: I S42/ 45SM/ RM/ VM32400G 1M x 32Bits x 4Banks Mobile Synchronous DRAM Description These I S42/ 45SM/ RM/VM32400G are mobile 134,217,728 bits CMOS Synchronous DRAM organized as 4 banks of 1,048,576 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs
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VM32400G
32Bits
RM/VM32400G
4Mx32
IS42RM32400G-6BLI
90-ball
IS42RM32400G-75BLI
IS42RM32400G-75BI
IS42RM32400G
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PDF
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ifr 4000
Abstract: marker beacon receiver 6041-5680-800 1002-5600-4C0 Types of Radar Antenna ion lithium battery ev Beacon ELT 406 ES 5106 V ED62 diode 1002-5600-8P0
Text: NAV/COMM Test Set IFR 4000 Operation Manual Issue-2 EXPORT CONTROL WARNING: This document contains controlled technology or technical data under the jurisdiction of the Export Administration Regulations EAR , 15 CFR 730-774. It cannot be transferred to any foreign third party without the specific prior approval of the U.S. Department
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DO-213AA
Abstract: No abstract text available
Text: Zener Regulator Diodes Part Number Microsemi Division Package Outline Micmsemi Data Vz Power Type Mil i i i i i l Spec Sheet IC W I (V) (zt • |mA) n-;f Zzt (fl) Zzk (f i) IR (uA) VR (V) 1.5 2 220 280 280 280 330 330 330 330 330 330 350 800 800 370 370
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OCR Scan
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DO-35
DO-213AA
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PDF
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