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    Vishay Semiconductors TY056S150A6OT

    DIODE SCHOTTKY 150V 5A DIE
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    TY056S150A6OT Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    TY056S150A6OT Vishay Semiconductors DIODE 150V TMBS Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: TY.S150A6. Series Vishay General Semiconductor Trench MOS Barrier Schottky Bare Die FEATURES TMBS • Trench MOS Schottky technology a c e • VBRM = 150 V • Low forward voltage drop • High frequency operation C 2 d b CIRCUIT DIAGRAM A (1) C (2)


    Original     		PDF S150A6. TY056S150A6OT TY080S150A6OU TY093S150A6OU TY102S150A6OU 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: TY.S150A6. Series Vishay General Semiconductor Trench MOS Barrier Schottky Bare Die FEATURES TMBS • Trench MOS Schottky technology a c e • VBRM = 150 V • Low forward voltage drop • High frequency operation C 2 d b CIRCUIT DIAGRAM A (1) C (2)


    Original     		PDF S150A6. TY056S150A6OT 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: TY.S150A6. Series Vishay General Semiconductor Trench MOS Barrier Schottky Bare Die FEATURES TMBS • Trench MOS Schottky technology a c e • VBRM = 150 V • Low forward voltage drop • High frequency operation C 2 d b CIRCUIT DIAGRAM A (1) C (2)


    Original     		PDF S150A6. TY056S150A6OT TY080S150A6OU TY093S150A6OU TY102S150A6OU 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12