TV210T018S4PV
Abstract: No abstract text available
Text: New Product TV210T.S4PV Series Vishay General Semiconductor PAR Transient Voltage Suppressor Bare Die 210 mils x 210 mils FEATURES a c e • Junction passivation optimized anisotropic rectifier technology design passivated • 6600 W peak pulse power capability with a 10/1000 s
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TV210T.
11-Mar-11
TV210T018S4PV
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TV210T018S4PV
Abstract: TV210T TV210T043S4PV SM8S33A equivalent
Text: New Product TV210T.S4PV Series Vishay General Semiconductor PAR Transient Voltage Suppressor Bare Die 210 mils x 210 mils FEATURES a c e • Junction passivation optimized anisotropic rectifier technology design passivated • 6600 W peak pulse power capability with a 10/1000 s
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Original
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PDF
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TV210T.
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
TV210T018S4PV
TV210T
TV210T043S4PV
SM8S33A equivalent
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Selector Guide
Abstract: do-218ab DO218AB
Text: V i s h ay I n t e r t e c h n o l o g y, I n c . Bare Die Diodes - A Wide Range of Bare Die and Wafer Form Products Small-Signal and Power Diodes Bare Die Products in Several Versions to Accommodate a Wide Variety of Assembly Techniques and Applications TABLE OF CONTENTS
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VMN-SG2163-1312
Selector Guide
do-218ab
DO218AB
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Untitled
Abstract: No abstract text available
Text: New Product TV210T.S4PV Series Vishay General Semiconductor PAR Transient Voltage Suppressor Bare Die 210 mils x 210 mils FEATURES a c e • Junction passivation optimized anisotropic rectifier technology design passivated • 6600 W peak pulse power capability with a 10/1000 s
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Original
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PDF
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TV210T.
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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