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    TTC3710 Price and Stock

    Toshiba America Electronic Components TTC3710B,S4X

    Bipolar Transistors - BJT Bipolar Transistors Silicn NPN Epitaxial
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    Mouser Electronics TTC3710B,S4X 129
    • 1 $2.12
    • 10 $1.36
    • 100 $0.928
    • 1000 $0.681
    • 10000 $0.6
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    Toshiba America Electronic Components TTC3710B,S4X(S

    Trans GP BJT NPN 80V 12A 3-Pin(3+Tab) TO-220SIS Magazine
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    Verical TTC3710B,S4X(S 133 31
    • 1 -
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    • 100 $0.8863
    • 1000 $0.8863
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    Chip1Stop TTC3710B,S4X(S Bulk 83
    • 1 $1.73
    • 10 $0.847
    • 100 $0.771
    • 1000 $0.771
    • 10000 $0.771
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    TTC3710 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TTC3710B Toshiba Japanese - Transistors Original PDF
    TTC3710B Toshiba Transistors Original PDF
    TTC3710B Toshiba TTC3710 - TRANSISTOR POWER TRANSISTOR, BIP General Purpose Power Original PDF

    TTC3710 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: TTC3710B バイポーラトランジスタ シリコンNPNエピタキシャル形 TTC3710B 1. 用途 • 大電流スイッチング用 2. 特長 1 コレクタエミッタ間飽和電圧が低い: VCE(sat) = 0.4 V (最大) (IC = 6 A , IB = 0.3 A) (2)


    Original     		PDF TTC3710B TTA1452Bã O-220SIS

    Untitled

    Abstract: No abstract text available
    Text: TTC3710B Bipolar Transistors Silicon NPN Epitaxial Type TTC3710B 1. Applications • High-Current Switching 2. Features 1 Low collector-emitter saturation voltage: VCE(sat) = 0.4 V (max) (IC = 6 A , IB = 0.3 A) (2) High speed switching: tstg = 1 µs (typ.)


    Original     		PDF TTC3710B TTA1452B O-220SIS

    ttc3710

    Abstract: TTC3710B
    Text: TTC3710B Bipolar Transistors Silicon NPN Epitaxial Type TTC3710B 1. Applications • High-Current Switching 2. Features 1 Low collector-emitter saturation voltage: VCE(sat) = 0.4 V (max) (IC = 6 A , IB = 0.3 A) (2) High speed switching: tstg = 1 µs (typ.)


    Original     		PDF TTC3710B TTA1452B O-220SIS ttc3710 TTC3710B

    TTA1452B

    Abstract: No abstract text available
    Text: TTA1452B Bipolar Transistors Silicon PNP Epitaxial Type TTA1452B 1. Applications • High-Current Switching 2. Features 1 Low collector-emitter saturation voltage: VCE(sat) = -0.4 V (max) (IC = -6 A , IB = -0.3 A) (2) High speed switching: tstg = 1 µs (typ.)


    Original     		PDF TTA1452B TTC3710B O-220SIS TTA1452B

    2SA1941 amp circuit

    Abstract: 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943
    Text: Semiconductor Catalog Mar. 2013 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including


    Original     		PDF BCE0016F 2SA1941 amp circuit 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943

    Untitled

    Abstract: No abstract text available
    Text: TTA1452B バイポーラトランジスタ シリコンPNPエピタキシャル形 TTA1452B 1. 用途 • 大電流スイッチング用 2. 特長 1 コレクタエミッタ間飽和電圧が低い: VCE(sat) = -0.4 V (最大) (IC = -6 A , IB = -0.3 A)


    Original     		PDF TTA1452B TTC3710Bã O-220SIS

    SMD TRANSISTOR H2A NPN

    Abstract: amplifier circuit using 2sa1943 and 2sc5200 MARKING SMD PNP TRANSISTOR Wf A06 smd transistor TTA1943 MARKING SMD PNP TRANSISTOR h2a 2sC5200, 2SA1943, 2sc5198 2SA1941 amp circuit 2SC3303 TTA006B
    Text: Semiconductor Catalog Mar. 2014 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS h t t p : // w w w. s e m i c o n . t o s h i b a . c o. j p / e n g Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including


    Original     		PDF