P-CHANNEL -30V -4A
Abstract: IRFTS9342TRPBF mosfet 23 Tsop-6 IRLML9301TR IRFTS9342 IRF5800TRPBF
Text: PD - 96029A IRF5800PbF HEXFET Power MOSFET l l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free Halogen-Free A D D 1 6 D 2 5 D G 3 4 S Description VDSS = -30V RDS on = 0.085Ω Top View
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Original
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6029A
IRF5800PbF
OT-23.
IRF5800TRPBF
IRF5800TR
12-Jul-2012
P-CHANNEL -30V -4A
IRFTS9342TRPBF
mosfet 23 Tsop-6
IRLML9301TR
IRFTS9342
IRF5800TRPBF
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PDF
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IRF5820
Abstract: IRF5800 IRF5810 SI3443DV IRF5851
Text: PD -94198A IRF5810 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS RDS on max (mW) ID -20V 90@VGS = -4.5V -2.9A 135@VGS = -2.5V -2.3A Description These P-channel HEXFET® Power MOSFETs from
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Original
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-94198A
IRF5810
IRF5820
IRF5800
IRF5810
SI3443DV
IRF5851
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PDF
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IRF5852
Abstract: IRF5800 IRF5805 IRF5806 IRF5850 IRF5851 SI3443DV IRF5820
Text: PD - 93999A IRF5852 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS RDS on max (W) ID 20 V 0.090@VGS = 4.5V 0.120@VGS = 2.5V 2.7A 2.2A Description These N-channel MOSFETs from International Rectifier
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Original
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3999A
IRF5852
IRF5852
IRF5800
IRF5805
IRF5806
IRF5850
IRF5851
SI3443DV
IRF5820
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PDF
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IRF5820
Abstract: IRF5800 IRF5804 SI3443DV IRF5851 IRF5806 irf5852 sot-23 MARKING CODE 3d
Text: PD - 94333A IRF5804 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS RDS on max (mW) ID -40V 198@VGS = -10V 334@VGS = -4.5V -2.5A -2.0A Description These P-channel HEXFET® Power MOSFETs from
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Original
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4333A
IRF5804
OT-23.
IRF5820
IRF5800
IRF5804
SI3443DV
IRF5851
IRF5806
irf5852
sot-23 MARKING CODE 3d
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PDF
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IRF5820
Abstract: IRF5800
Text: PD - 93850A IRF5800 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge D A D 1 6 2 5 3 4 VDSS = -30V D G D S RDS on = 0.085Ω Top View Description These P-channel MOSFETs from International Rectifier
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Original
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3850A
IRF5800
OT-23.
IRF5820
IRF5800
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PDF
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IRF5820
Abstract: 94333 IRF5800 IRF5804 SI3443DV k 9632 sot-23 MARKING CODE 3d
Text: PD - 94333B IRF5804 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS RDS on max (mW) ID -40V 198@VGS = -10V 334@VGS = -4.5V -2.5A -2.0A Description These P-channel HEXFET® Power MOSFETs from
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Original
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94333B
IRF5804
OT-23.
IRF5820
94333
IRF5800
IRF5804
SI3443DV
k 9632
sot-23 MARKING CODE 3d
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PDF
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IRF5851
Abstract: n-p channel mosfet tsop6 IRF5800 SI3443DV TSOP 66 Package thermal resistance sot-23 MARKING CODE G1 variac
Text: PD-93998B IRF5851 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge G1 1 6 D1 S2 2 5 S1 G2 3 4 D2 VDSS N-Ch P-Ch 20V -20V RDS on 0.090Ω 0.135Ω Description These N and P channel MOSFETs from International Rectifier utilize advanced
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Original
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PD-93998B
IRF5851
IRF5851
n-p channel mosfet tsop6
IRF5800
SI3443DV
TSOP 66 Package thermal resistance
sot-23 MARKING CODE G1
variac
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PDF
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IRF5805
Abstract: SI3443DV TSOP6 Marking Code 17 IRF5820
Text: PD -94029A IRF5805 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS RDS on max ID -30V 0.098@VGS = -10V 0.165@VGS = -4.5V -3.8A Description These P-channel MOSFETs from International Rectifier
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Original
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-94029A
IRF5805
OT-23.
spac252-7105
IRF5805
SI3443DV
TSOP6 Marking Code 17
IRF5820
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PDF
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IRF5820
Abstract: SI3443DV IRF5800 IRF5850
Text: PD - 93947A IRF5850 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS = -20V RDS on = 0.135Ω Top View Description These P-channel MOSFETs from International Rectifier
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Original
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3947A
IRF5850
IRF5850
OT-23
IRF5820
SI3443DV
IRF5800
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PDF
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Untitled
Abstract: No abstract text available
Text: Si3457BDV Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.054 at VGS = - 10 V - 5.0 0.100 at VGS = - 4.5 V - 3.7 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs TSOP-6
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Original
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Si3457BDV
Si3457BDV-T1-E3
Si3457BDV-T1-GE3
11-Mar-11
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PDF
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si3457-b
Abstract: No abstract text available
Text: Si3457BDV Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.054 at VGS = - 10 V - 5.0 0.100 at VGS = - 4.5 V - 3.7 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs TSOP-6
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Original
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Si3457BDV
Si3457BDV-T1-E3
Si3457BDV-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
si3457-b
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PDF
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IRF5820
Abstract: IRF5806 IRF5800 SI3443DV 3D marking sot23 sot-23 Marking 3D
Text: PD - 93997A IRF5806 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS RDS on max ID -20V 86mΩ@VGS = -4.5V 147mΩ@VGS = -2.5V -4.0A Description These P-channel MOSFETs from International Rectifier
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Original
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3997A
IRF5806
OT-23.
space252-7105
IRF5820
IRF5806
IRF5800
SI3443DV
3D marking sot23
sot-23 Marking 3D
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PDF
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Untitled
Abstract: No abstract text available
Text: PD -94029A IRF5805 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS RDS on max ID -30V 0.098@VGS = -10V 0.165@VGS = -4.5V -3.0A Description These P-channel MOSFETs from International Rectifier
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Original
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-94029A
IRF5805
OT-23.
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 93997A IRF5806 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS RDS on max ID -20V 86mΩ@VGS = -4.5V 147mΩ@VGS = -2.5V -3.0A Description These P-channel MOSFETs from International Rectifier
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Original
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3997A
IRF5806
OT-23.
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PDF
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Si3443DV
Abstract: P-Channel 200V MOSFET TSOP6
Text: PD- 93795A Si3443DV HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel -2.5V Rated D A D 1 6 2 5 3 4 VDSS = -20V D G D S RDS on = 0.065Ω T o p V ie w Description These P-channel MOSFETs from International Rectifier
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Original
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3795A
Si3443DV
OT-23.
P-Channel 200V MOSFET TSOP6
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PDF
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Vishay DaTE CODE tsop-6
Abstract: SI3457CDV-T1-GE
Text: New Product Si3457CDV Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A)a 0.074 at VGS = - 10 V - 5.1 0.113 at VGS = - 4.5 V - 4.1 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET
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Original
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Si3457CDV
Si3457CDV-T1-E3
Si3457CDV-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
Vishay DaTE CODE tsop-6
SI3457CDV-T1-GE
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PDF
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Untitled
Abstract: No abstract text available
Text: Si3457BDV Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.054 at VGS = - 10 V - 5.0 0.100 at VGS = - 4.5 V - 3.7 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs TSOP-6
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Original
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Si3457BDV
Si3457BDV-T1-E3
Si3457BDV-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product Si3457CDV Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A)a 0.074 at VGS = - 10 V - 5.1 0.113 at VGS = - 4.5 V - 4.1 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET
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Original
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Si3457CDV
Si3457CDV-T1-E3
Si3457CDV-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
PDF
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Untitled
Abstract: No abstract text available
Text: New Product Si3433CDV Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A)a 0.038 at VGS = - 4.5 V -6 0.046 at VGS = - 2.5 V -6 0.060 at VGS = - 1.8 V -6 • Halogen-free According to IEC 61249-2-21 Available
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Original
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Si3433CDV
Si3433CDV-T1-E3
Si3433CDV-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
PDF
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Untitled
Abstract: No abstract text available
Text: New Product Si3433CDV Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A)a 0.038 at VGS = - 4.5 V -6 0.046 at VGS = - 2.5 V -6 0.060 at VGS = - 1.8 V -6 • Halogen-free According to IEC 61249-2-21 Available
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Original
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Si3433CDV
Si3433CDV-T1-E3
Si3433CDV-T1-GE3
11-Mar-11
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PDF
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SI3457CDV-T1-GE3
Abstract: No abstract text available
Text: New Product Si3457CDV Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A)a 0.074 at VGS = - 10 V - 5.1 0.113 at VGS = - 4.5 V - 4.1 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET
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Original
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Si3457CDV
Si3457CDV-T1-E3
Si3457CDV-T1-GE3
11-Mar-11
|
PDF
|
Untitled
Abstract: No abstract text available
Text: New Product Si3433CDV Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A)a 0.038 at VGS = - 4.5 V -6 0.046 at VGS = - 2.5 V -6 0.060 at VGS = - 1.8 V -6 • Halogen-free According to IEC 61249-2-21 Available
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Original
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Si3433CDV
Si3433CDV-T1-E3
Si3433CDV-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
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IRF580
Abstract: No abstract text available
Text: PD-95262A IRF5803PbF l l l l l l HEXFET Power MOSFET Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free VDSS RDS on max (mW) ID -40V 112@VGS = -10V 190@VGS = -4.5V -3.4A -2.7A Description These P-channel HEXFET® Power MOSFETs from
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Original
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PD-95262A
IRF5803PbF
OT-23.
IRF580
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PDF
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Si3443DV
Abstract: P-Channel 200V MOSFET TSOP6 93795B
Text: PD- 93795B Si3443DV HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel -2.5V Rated D A D 1 6 2 5 3 4 VDSS = -20V D G D S RDS on = 0.065Ω Top View Description These P-channel MOSFETs from International Rectifier
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Original
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93795B
Si3443DV
OT-23.
P-Channel 200V MOSFET TSOP6
93795B
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PDF
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