TSOP-6 MARKING 6A Search Results

TSOP-6 MARKING 6A Result Highlights (5)

Part	Manufacturer	Description
MG8097/B	Rochester Electronics LLC	8097 - Math Coprocessor - Dual marked (8506301ZA)
5490/BCA	Rochester Electronics LLC	5490 - Decade Counter - Dual marked (M38510/01307BCA)
5405/BCA	Rochester Electronics LLC	5405 - Gate - Dual marked (M38510/00108BCA)
54AC20/SDA-R	Rochester Electronics LLC	54AC20/SDA-R - Dual marked (M38510R75003SDA)
UHD503R/883	Rochester Electronics LLC	UHD503R/883 - Dual marked (5962-8855101CA)

TSOP-6 MARKING 6A Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
RISC-Processor s3c2410 Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B Text: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH	Original	BR-04-ALL-005 BR-04-ALL-004 RISC-Processor s3c2410 MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B	PDF
IGBT Battery 120 watt Charger circuit diagrams Abstract: tl494 spice model four relay stabilizer circuit diagram 650 va gsm door lock circuit diagram MRC 433 mosfet MC34066 SOLUTION FOR SMPS USING TL494 MOSFET ESD Rated TL594 phone charger car power inverter TL494 Text: BRD8016/D Rev. 0, Nov-2000 Wireless Component Solutions for Handsets and Accessories Wireless Component Solutions for Handsets and Accessories BRD8016/D Rev. 0, Nov–2000  SCILLC, 2000 “All Rights Reserved’’ WIRELESS EZFET is a trademark of Semiconductor Components Industries, LLC SCILLC .	Original	BRD8016/D Nov-2000 r14525 IGBT Battery 120 watt Charger circuit diagrams tl494 spice model four relay stabilizer circuit diagram 650 va gsm door lock circuit diagram MRC 433 mosfet MC34066 SOLUTION FOR SMPS USING TL494 MOSFET ESD Rated TL594 phone charger car power inverter TL494	PDF
SAMSUNG 4gb NAND Flash Qualification Report Abstract: ddr3 MTBF SAMSUNG 256Mb NAND Flash Qualification Reliability part number decoder toshiba NAND Flash MLC DDR3 pcb layout raw card f so-dimm nand flash socket lga 60 DDR3 sodimm pcb layout samsung microsd card 2gb micron DDR3 pcb layout Hynix 32Gb Nand flash Text: INDUSTRIAL MEMORY SOLUTIONS NAND FLASH PRODUCTS & DRAM MODULES Why choose Swissbit Swissbit is the largest independent DRAM module and Flash storage manufacturer in Europe. This enables Swissbit to be a global leader in technology supplying High Quality Memory solutions to the several key market areas	Original	CH-9552 D-12681 SAMSUNG 4gb NAND Flash Qualification Report ddr3 MTBF SAMSUNG 256Mb NAND Flash Qualification Reliability part number decoder toshiba NAND Flash MLC DDR3 pcb layout raw card f so-dimm nand flash socket lga 60 DDR3 sodimm pcb layout samsung microsd card 2gb micron DDR3 pcb layout Hynix 32Gb Nand flash	PDF
M27C256B datecode Abstract: PART MARKING M27C512 M27C256B PART MARKING m27c512 equivalent M27C256 M27C512 marking M27128A M2716 M2764A QRR038 Text: QUALITY & RELIABILITY REPORT July 1996 to June 1997 - EPROM, FLASH Memory, EEPROM and SRAM Products INTRODUCTION SGS-THOMSON manufactures a wide range of memory types which include: Non-volatile memories: Flash memory, UV EPROM, OTP EPROM and EEPROMs. EPROM products are manufactured in both 1.5µ NMOS and 0.8	Original		PDF
K8D3216UBC-pi07 Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM	Original	BR-05-ALL-002 K8D3216UBC-pi07 K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm	PDF
PC133 registered reference design Abstract: No abstract text available Text: 4, 8, 16 MEG x 72 SDRAM DIMMs SYNCHRONOUS DRAM MODULE MT5LSDT472A, MT5LSDT872A, MT5LSDT1672A For the latest data sheet, please refer to the Micron Web site: www.micronsemi.com/datasheets/datasheet.html FEATURES PIN ASSIGNMENT Front View 168-Pin DIMM • PC66-*, PC100- and PC133-compliant	Original	PC66-* PC100- PC133-compliant 168-pin, 128MB 096-cycle MT8VR12818AG 512MB MT16VR25616AG PC133 registered reference design	PDF
Untitled Abstract: No abstract text available Text: PD64MX6408 XXX D2X, PD128MX6416 (XXX) D2X SDRAM DDR MODULE 64M, 128M X 64 DIMM Features: • · · · · · · · · · · · · 184 pin dual in-line memory modules (DIMM) Fast data transfer rates PC2700, PC3200 Utilizes DDR333 and DDR400 DDR SDRAM components	Original	PD64MX6408 PD128MX6416 PC2700, PC3200 DDR333 DDR400 512MB 64MX64) 128MX64) 8125us	PDF
mosfet triggering circuit USING TL494 Abstract: controller for PWM fan tl494 TIP35C TIP36C sub amplifier circuit diagram 74ls TTL family UC3842 variable voltage smps design with TL431 Buck converter with sg3526 UC3842 smps design with TL431 MC44608P40 equivalent TRANSISTOR MPS2112 MC3364D Text: SG388/D Rev. 3, May-2001 Master Components Selector Guide PUBLICATION ORDERING INFORMATION NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada	Original	SG388/D May-2001 The422-3781 r14525 SG388/D mosfet triggering circuit USING TL494 controller for PWM fan tl494 TIP35C TIP36C sub amplifier circuit diagram 74ls TTL family UC3842 variable voltage smps design with TL431 Buck converter with sg3526 UC3842 smps design with TL431 MC44608P40 equivalent TRANSISTOR MPS2112 MC3364D	PDF
Untitled Abstract: No abstract text available Text: PD16M6408 XXX D2T, P32M6416 (XXX) D2T SDRAM DDR MODULE 16M, 32M x 64 DIMM Features: • • • • • • • • • • • 184 pin dual in-line memory modules (DIMM) Utilizes 133MHz DDR SDRAM components 66p TSOP components. 128MB (16MX64), 256MB (32MX64)	Original	PD16M6408 P32M6416 133MHz 128MB 16MX64) 256MB 32MX64) 16Mx8 PD16M6408T86AD2T PD16M6408T95AD2T	PDF
Untitled Abstract: No abstract text available Text: PD16M6404 XXX D3T, PD32M6408 (XXX) D3T SDRAM DDR MODULE 16M, 32M X 64 DIMM Features: • • • • • • • • • • • • 184 pin dual in-line memory modules (DIMM) Fast data transfer rates PC2100 Utilizes 16MX16 266DDR SDRAM components 66p TSOP components.	Original	PD16M6404 PD32M6408 PC2100 16MX16 266DDR 128MB 16MX64) 256MB 32MX64) 8125us	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors NPN Silicon COLLECTOR 3 BC817-16LT1 BC817-25LT1 BC817-40LT1 1 BASE 2 EMITTER 3 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 45 V Collector – Base Voltage	Original	BC817-16LT1 BC817-25LT1 BC817-40LT1 236AB)	PDF
PD64M6408T27ZD2F Abstract: No abstract text available Text: PD64M6408 XXX D2X, PD128M6416 (XXX) D2X SDRAM DDR MODULE 64M, 128M X 64 DIMM Features: • • • • • • • • • • • • • 184 pin dual in-line memory modules (DIMM) Fast data transfer rates PC2100, PC2700, PC3200 Utilizes DDR266, DDR333 and DDR400B DDR	Original	PD64M6408 PD128M6416 PC2100, PC2700, PC3200 DDR266, DDR333 DDR400B 512MB 64MX64) PD64M6408T27ZD2F	PDF
Untitled Abstract: No abstract text available Text: PD64M6408 XXX D2X, P128M6416 (XXX) D2X SDRAM DDR MODULE 64M, 128M X 64 DIMM Features: • • • • • • • • • • • • • 184 pin dual in-line memory modules (DIMM) Fast data transfer rates PC2100, PC2700, PC3200 Utilizes DDR266, DDR333 and DDR400B DDR	Original	PD64M6408 P128M6416 PC2100, PC2700, PC3200 DDR266, DDR333 DDR400B 512MB 64MX64)	PDF
MT48LC16M16A2TG-6A Abstract: MT48LC16M16A2 MICRON technical note TN-48-05 MT48LC16M16A2 rev C MT48LC16M16A2 rev D MT48LC32M8A2 Text: 256Mb x8, x16 SDRAM Addendum Features Synchronous DRAM MT48LC32M8A2 – 8 Meg x 8 x 4 Banks MT48LC16M16A2 – 4 Meg x 16 x 4 Banks For the latest data sheet, please refer to the Micron Web site: www.micron.com/dramds Features Addendum Changes • • • •	Original	256Mb MT48LC32M8A2 MT48LC16M16A2 PC100 PC133 192-cycle 09005aef81880748, 09005aef81880777 256Mbx16SDRAM MT48LC16M16A2TG-6A MT48LC16M16A2 MICRON technical note TN-48-05 MT48LC16M16A2 rev C MT48LC16M16A2 rev D MT48LC32M8A2	PDF

Untitled Abstract: No abstract text available Text: PD32M6408 XXX D2X, PD64M6416 (XXX) D2X SDRAM DDR MODULE 32M, 64M X 64 DIMM Features: • • • • • • • • • • • • 184 pin dual in-line memory modules (DIMM) Fast data transfer rates PC2100, PC2700, PC3200 Utilizes DDR266, DDR333 and DDR400B DDR	Original	PD32M6408 PD64M6416 PC2100, PC2700, PC3200 DDR266, DDR333 DDR400B 256MB 32MX64)	PDF
Untitled Abstract: No abstract text available Text: S29GLxxxM MirrorBitTM Flash Family S29GL256M, S29GL128M, S29GL064M, S29GL032M 256 Megabit, 128 Megabit, 64 Megabit, and 32Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 0.23 µm MirrorBit process technology Data Sheet DATA SHEET For new designs, S29GL128N supersedes S29GL128M, and S29GL256N supersedes S29GL256M. These are factory-recommended product migrations. Please refer to the S29GLxxxN	Original	S29GLxxxM S29GL256M, S29GL128M, S29GL064M, S29GL032M 32Megabit, S29GL128N S29GL256N S29GL256M.	PDF
SpecTek SDRAM 256Mb Abstract: SpecTek P32M648HHC 32MX64 DDR266 DDR333 DDR400B PC2100 PC2700 PC3200 Text: P32M648HHC - 256MB, P64M6416HHC -512MB SDRAM DDR MODULE 32M, 64M X 64 DIMM Features: • • • • • • • • • • • • 184 pin dual in-line memory modules DIMM Fast data transfer rates PC2100, PC2700, PC3200 Utilizes DDR266, DDR333 and DDR400B DDR	Original	P32M648HHC 256MB, P64M6416HHC -512MB PC2100, PC2700, PC3200 DDR266, DDR333 DDR400B SpecTek SDRAM 256Mb SpecTek P32M648HHC 32MX64 DDR266 PC2100 PC2700 PC3200	PDF
VISHAY TSOP-6 MARKING CODE 6A Abstract: No abstract text available Text: Si3446ADV Vishay Siliconix N-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) 20 FEATURES RDS(on) (Ω) ID (A)a 0.037 at VGS = 4.5 V 6 0.065 at VGS = 2.5V 6 Qg (Typ.) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC	Original	Si3446ADV 2002/95/EC Si3446ADV-T1-E3 Si3446ADV-T1-GE3 11-Mar-11 VISHAY TSOP-6 MARKING CODE 6A	PDF
Untitled Abstract: No abstract text available Text: Si3446ADV Vishay Siliconix N-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) 20 FEATURES RDS(on) (Ω) ID (A)a 0.037 at VGS = 4.5 V 6 0.065 at VGS = 2.5V 6 Qg (Typ.) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC	Original	Si3446ADV 2002/95/EC Si3446ADV-T1-E3 Si3446ADV-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Untitled Abstract: No abstract text available Text: P16M644HGD, P32M648HGD SDRAM DDR MODULE 16M, 32M X 64 DIMM PIN ASSIGNMENT 184-Pin DIMM Features: • • • • • • • • • • • • 184 pin dual in-line memory modules DIMM Fast data transfer rates PC2100 and PC2700 Utilizes 16MX16 DDR266 and DDR333 SDRAM	Original	P16M644HGD, P32M648HGD 184-Pin PC2100 PC2700 16MX16 DDR266 DDR333 128MB 16MX64)	PDF
VISHAY TSOP-6 MARKING CODE 6A Abstract: No abstract text available Text: Si3446ADV Vishay Siliconix N-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) 20 FEATURES RDS(on) (Ω) ID (A)a 0.037 at VGS = 4.5 V 6 0.065 at VGS = 2.5V 6 Qg (Typ.) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC	Original	Si3446ADV 2002/95/EC Si3446ADV-T1-E3 Si3446ADV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 VISHAY TSOP-6 MARKING CODE 6A	PDF
K5W1G Abstract: KMCME0000M-B998 k9hbg08u1m K9MCG08U5M K5E1257ACM MC4GE04G5APP-0XA b998 KMCME0000M hd161hj K5D1G Text: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage August 2007 MEMORY AND STORAGE DRAM DDR3 SDRAM DDR2 SDRAM DDR SDRAM SDRAM MOBILE SDRAM RDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND FLASH NAND FLASH ORDERING INFORMATION	Original	BR-07-ALL-001 K5W1G KMCME0000M-B998 k9hbg08u1m K9MCG08U5M K5E1257ACM MC4GE04G5APP-0XA b998 KMCME0000M hd161hj K5D1G	PDF
marking 52 Abstract: 16u6 Text: ADVANCE DRAM 4 MEG x 16 3.3V, BURST EDO FEATURES PIN ASSIGNMENT Top View • Burst order, interleave or linear, program med by executing W CBR cycle after initialization • Single +3.3V ± 5% power supply • Industry-standard x l6 pinout and package • 13 row-addresses, 9 colum n-addresses (U2) or	OCR Scan	MT4LC4M16U2/U6 096-cycle 50-Pin 60nIGH marking 52 16u6	PDF
PD42S Abstract: No abstract text available Text: b427525 GQ4HSbT TEI « N E C E MOS INTEGRATED CIRCUIT jtiP D 4 2 S 1 6 1 9 0 L , 4 2 S 1 7 1 9 0 L , 4 2 S 1 8 1 9 0 L 16 M B IT D Y N A M IC RA M 3 .3 V FA ST P A G E M O D E & B Y T E W R IT E M O D E P R E LIM IN A R Y -D E S C R IP T IO N The NEC n PD42S16190L. ^ PD42S17190L and // PD42S18190L a re 1 048 576 words by 18 b i t s	OCR Scan	b427525 uPD42S16190L uPD42S17190L uPD42S18190L b427525 0042bE 475mil) P32VF-100-475A P32VF-100-475A PD42S	PDF

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TSOP-6 MARKING 6A Search Results

TSOP-6 MARKING 6A Result Highlights (5)

TSOP-6 MARKING 6A Datasheets Context Search

RISC-Processor s3c2410

IGBT Battery 120 watt Charger circuit diagrams

SAMSUNG 4gb NAND Flash Qualification Report

M27C256B datecode

K8D3216UBC-pi07

PC133 registered reference design

Untitled

mosfet triggering circuit USING TL494

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PD64M6408T27ZD2F

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MT48LC16M16A2TG-6A

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SpecTek SDRAM 256Mb

VISHAY TSOP-6 MARKING CODE 6A

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VISHAY TSOP-6 MARKING CODE 6A

K5W1G

marking 52

PD42S