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    TSOP 66 PACKAGE Search Results

    TSOP 66 PACKAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH9R00CQ5 Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 150 V, 64 A, 0.009 Ω@10 V, High-speed diode, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH1R306PL Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 100 A, 0.00134 Ω@10 V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPHR8504PL Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 150 A, 0.00085 Ω@10 V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation

    TSOP 66 PACKAGE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    VCCQ15

    Abstract: No abstract text available
    Text: White Electronic Designs W3E64M72S-XSBX PRELIMINARY* 64Mx72 DDR SDRAM BENEFITS FEATURES Data rate = 200, 250, 266 and 333Mbs 66% Space Savings vs. TSOP Package: Reduced part count • 219 Plastic Ball Grid Array PBGA , 25 x 32mm 55% I/O reduction vs TSOP


    Original     		64Mx72 333Mbs W3E64M72S-XSBX VCCQ15 PDF

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs W3E64M72S-XSBX 64Mx72 DDR SDRAM BENEFITS FEATURES „ Data rate = 200, 250, 266 and 333Mbs* „ 66% Space Savings vs. TSOP „ Package: „ Reduced part count • 219 Plastic Ball Grid Array PBGA , 25 x 32mm „ 55% I/O reduction vs TSOP


    Original     		64Mx72 333Mbs* 333Mbs PDF

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs W3E64M72S-XSBX 64Mx72 DDR SDRAM BENEFITS FEATURES „ Data rate = 200, 250, 266 and 333Mbs* „ 66% Space Savings vs. TSOP „ Package: „ Reduced part count • 219 Plastic Ball Grid Array PBGA , 25 x 32mm „ 55% I/O reduction vs TSOP


    Original     		W3E64M72S-XSBX 64Mx72 333Mbs* 512MByte 333Mbs PDF

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs W3E64M72S-XSBX 64Mx72 DDR SDRAM FEATURES BENEFITS „ Data rate = 200, 250, 266 and 333Mbs* „ 66% Space Savings vs. TSOP „ Package: „ Reduced part count • 219 Plastic Ball Grid Array PBGA , 25 x 32mm „ 55% I/O reduction vs TSOP


    Original     		64Mx72 333Mbs* W3E64M72S-XSBX 333Mbs PDF

    W3E64M72S-XBX

    Abstract: No abstract text available
    Text: White Electronic Designs W3E64M72S-XBX ADVANCED* 64Mx72 DDR SDRAM BENEFITS FEATURES Data rate = 200, 250, 266 and 333Mbs 66% Space Savings vs. TSOP Package: Reduced part count • 219 Plastic Ball Grid Array PBGA , 25 x 32mm 55% I/O reduction vs TSOP 2.5V ±0.2V core power supply


    Original     		W3E64M72S-XBX 64Mx72 333Mbs 512MByte W3E64M72S-ESB W3E64M72S-XBX PDF

    k4h510438b

    Abstract: No abstract text available
    Text: 512MB, 1GB, 2GB TSOP Registered DIMM Pb-Free DDR SDRAM DDR SDRAM Registered Module 184pin Registered Module based on 512Mb B-die with 1,700 / 1,200mil Height & 72-bit ECC 66 TSOP II with Pb-Free (RoHS compliant) Revision 1.2 Oct. 2004 Revison 1.2 Oct. 2004


    Original     		512MB, 184pin 512Mb 200mil 72-bit M383L6523BUS-CA2/B0/A0 k4h510438b PDF

    DD256M

    Abstract: T37Z TSOP 66 Package thermal resistance
    Text: 1 GigaBit Stacked DDR1 SDRAM DD54E, DD54ER 256M x 4 Features • Low Profile 66 Ball Two-High Stacked Die micropede BGA • 77% Space Savings Over Two 66 Pin TSOP Packages • 50% Space Savings Over Two 60 Ball BGA Packages • Significant Space Savings and Reduced Parasitics and


    Original     		DD54E, DD54ER DD54ER) DDR400) DD256M42U3BA DD54E 3887x132 DD54E) DD256M T37Z TSOP 66 Package thermal resistance PDF

    T37Z

    Abstract: DD128 TSOP 66 pin Package thermal resistance DD128M82U3BB6 267-Mbps
    Text: 1 GigaBit Stacked DDR1 SDRAM 128M x 8 DD55E, DD55ER Features • Low Profile 66 Ball Two-High Stacked Die micropede BGA • 77% Space Savings Over Two 66 Pin TSOP Packages • 50% Space Savings Over Two 60 Ball BGA Packages • Significant Space Savings and Reduced Parasitics and


    Original     		DD55E, DD55ER DD54ER) DDR400) DD128M82U3BA DD55E 3887x132 DD55E) T37Z DD128 TSOP 66 pin Package thermal resistance DD128M82U3BB6 267-Mbps PDF

    m 052

    Abstract: No abstract text available
    Text: TSOP 2 66-P-400-0.65-K Mirror finish Package material Lead frame material Pin treatment Package weight (g) Rev. No./Last Revised Epoxy resin 42 alloy Solder plating( 5 m) 0.52 TYP. 1/Sept.24,1998


    Original     		66-P-400-0 m 052 PDF

    Untitled

    Abstract: No abstract text available
    Text: TSOP 2 66-P-400-0.65-K Mirror finish 5 Package material Lead frame material Pin treatment Package weight (g) Rev. No./Last Revised Epoxy resin 42 alloy Solder plating(≥5µm) 0.52 TYP. 1/Sept.24,1998


    Original     		66-P-400-0 PDF

    TSOP 66 Package

    Abstract: tsop 66
    Text: EDD2516AKTA Package Drawing 66-pin Plastic TSOP II Unit: mm 22.22 ± 0.10 *1 A 11.76 ± 0.20 34 10.16 66 PIN#1 ID 1 0.65 0.17 to 0.32 33 B 0.13 M S A B 0.80 Nom 0.91 max. 0.25 0.10 +0.08 −0.05 0.10 S 0.09 to 0.20 S 1.20 max 1.0 ± 0.05 0 to 8° 0.60 +0.15


    Original     		EDD2516AKTA 66-pin ECA-TS2-0143-01 E0303E40 TSOP 66 Package tsop 66 PDF

    Untitled

    Abstract: No abstract text available
    Text: 168PIN PC66 Unbuffered DIMM 64MB With 8Mx8 CL3 TS8MLS64V1WN Description Placement The TS8MLS64V1WN is a 8M x 64bits Synchronous Dynamic RAM high density for PC-66. The TS8MLS64V1WN consists of 8pcs CMOS 8Mx8 bits Synchronous DRAMs in TSOP-II 400mil packages


    Original     		168PIN TS8MLS64V1WN TS8MLS64V1WN 64bits PC-66. 400mil 168-pin PDF

    IC43R16320B

    Abstract: DDR333 DDR400 IC43R16320B-6TL
    Text: IS43R16320B IC43R16320B 512 Mb Double Data Rate Synchronous DRAM PRELIMINARY INFORMATION JUNE 2008 Features Specifications • Density: 512M bits • Organization ⎯ 8M words x 16 bits × 4 banks • Package: 66-pin plastic TSOP II ⎯ Lead-free (RoHS compliant)


    Original     		IS43R16320B IC43R16320B 66-pin DDR400: DDR333, 400Mbps/333Mbps/266Mbps IC43R16320B DDR333 DDR400 IC43R16320B-6TL PDF

    Untitled

    Abstract: No abstract text available
    Text: 168PIN PC66 Unbuffered DIMM 128MB with 8Mx8 CL3 TS16MLS64V1WN Description Placement The TS16MLS64V1WN is a 16M bit x 64 Synchronous Dynamic RAM high-density for PC-66. The TS16MLS64V1WN consists of 16pcs CMOS 8Mx8 bits Synchronous DRAMs in TSOP-II 400mil packages and


    Original     		168PIN 128MB TS16MLS64V1WN TS16MLS64V1WN PC-66. 16pcs 400mil 168-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: IS43R16320B IC43R16320B 512 Mb Double Data Rate Synchronous DRAM PRELIMINARY INFORMATION AUGUST 2007 Features Specifications • Density: 512M bits • Organization ⎯ 8M words x 16 bits × 4 banks • Package: 66-pin plastic TSOP II ⎯ Lead-free (RoHS compliant)


    Original     		IS43R16320B IC43R16320B 66-pin DDR400: DDR333, 400Mbps/333Mbps/266Mbps cycles/64ms PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET 256M bits DDR SDRAM EDD2516AETA 16M words x 16 bits Specifications Pin Configurations • Density: 256M bits • Organization  4M words × 16 bits × 4 banks • Package: 66-pin plastic TSOP (II)  Lead-free (RoHS compliant)


    Original     		EDD2516AETA 66-pin 333Mbps/266Mbps cycles/64ms M01E0107 E0859E10 PDF

    EDD2508AETA

    Abstract: EDD2508AETA-5B-E EDD2508AETA-5C-E EDD2508AETA-6B-E EDD2508AETA-7A-E DDR333 DDR400
    Text: PRELIMINARY DATA SHEET 256M bits DDR SDRAM EDD2508AETA 32M words x 8 bits Specifications Features • Density: 256M bits • Organization  8M words × 8 bits × 4 banks • Package: 66-pin plastic TSOP (II)  Lead-free (RoHS compliant) • Power supply:


    Original     		EDD2508AETA 66-pin DDR400: DDR333, 400Mbps/333Mbps/266Mbps cycles/64ms M01E0107 E0861E20 EDD2508AETA EDD2508AETA-5B-E EDD2508AETA-5C-E EDD2508AETA-6B-E EDD2508AETA-7A-E DDR333 DDR400 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET 256M bits DDR SDRAM EDD2508AETA-5 32M words x 8 bits, DDR400 Specifications Pin Configurations • Density: 256M bits • Organization  8M words × 8 bits × 4 banks • Package: 66-pin plastic TSOP (II)  Lead-free (RoHS compliant)


    Original     		EDD2508AETA-5 DDR400) 66-pin 400Mbps cycles/64ms M01E0107 E0860E10 PDF

    Untitled

    Abstract: No abstract text available
    Text: 168PIN PC66 Unbuffered DIMM 32MB With 2M X8 CL3 TS4MLS64V1PN Description Placement The TS4MLS64V1PN is a 4M bit x 64 Synchronous Dynamic RAM high-density for PC-66. The TS4MLS64V1PN consists of 16pcs CMOS 2Mx8 bits Synchronous DRAMs in TSOP-II 400mil packages and a


    Original     		168PIN TS4MLS64V1PN TS4MLS64V1PN PC-66. 16pcs 400mil 168-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET 128M bits DDR SDRAM EDD1216AJTA 8M words x 16 bits Specifications Features • Density: 128M bits • Organization ⎯ 2M words × 16 bits × 4 banks • Package: 66-pin plastic TSOP (II) ⎯ Lead-free (RoHS compliant) • Power supply:


    Original     		EDD1216AJTA 66-pin DDR400: DDR333, 400Mbps/333Mbps/266Mbps cycles/64ms M01E0107 E0972E10 PDF

    EDD2516AETA-5B-E

    Abstract: DDR333 DDR400 EDD2516AETA EDD2516AETA-5C-E EDD2516AETA-6B-E EDD2516AETA-7A-E
    Text: PRELIMINARY DATA SHEET 256M bits DDR SDRAM EDD2516AETA 16M words x 16 bits Specifications Features • Density: 256M bits • Organization  4M words × 16 bits × 4 banks • Package: 66-pin plastic TSOP (II)  Lead-free (RoHS compliant) • Power supply:


    Original     		EDD2516AETA 66-pin DDR400: DDR333, 400Mbps/333Mbps/266Mbps cycles/64ms M01E0107 E0859E20 EDD2516AETA-5B-E DDR333 DDR400 EDD2516AETA EDD2516AETA-5C-E EDD2516AETA-6B-E EDD2516AETA-7A-E PDF

    Untitled

    Abstract: No abstract text available
    Text: 184PIN DDR333Unbuffered DIMM 512MB With 32Mx8 CL2.5 TS64MLD72V3F5 Description Placement The TS64MLD72V3F5 is a 64Mx72bits Double Data Rate SDRAM high density for DDR333. The TS64MLD72V3F5 consists of 18pcs CMOS 32Mx8 bits Double Data Rate SDRAMs in 66 pin TSOP-II 400mil packages and a 2048


    Original     		184PIN DDR333Unbuffered 512MB 32Mx8 TS64MLD72V3F5 TS64MLD72V3F5 64Mx72bits DDR333. 18pcs PDF

    DDR400

    Abstract: No abstract text available
    Text: DATA SHEET 256M bits DDR SDRAM EDD2516AKTA-5-E 16M words x 16 bits, DDR400 Specifications Pin Configurations • Density: 256M bits • Organization ⎯ 4M words × 16 bits × 4 banks • Package: 66-pin plastic TSOP (II) ⎯ Lead-free (RoHS compliant)


    Original     		EDD2516AKTA-5-E DDR400) 66-pin 400Mbps cycles/64ms M01E0107 E0638E30 DDR400 PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET 256M bits DDR SDRAM EDD2516AKTA-5-E 16M words x 16 bits, DDR400 Specifications Pin Configurations • Density: 256M bits • Organization ⎯ 4M words × 16 bits × 4 banks • Package: 66-pin plastic TSOP (II) ⎯ Lead-free (RoHS compliant)


    Original     		EDD2516AKTA-5-E DDR400) 66-pin 400Mbps cycles/64ms M01E0107 E0638E30 PDF