M312L5623MTS
Abstract: TSOP 173 g M312L5620MTS-CB3 m312l5623mts-cb3
Text: 2GB TSOP Registered DIMM Preliminary DDR SDRAM DDR SDRAM Registered Module TSOP-II 184pin Registered Module based on 1Gb M-die with 1,200mil Height & 72-bit ECC Revision 0.0 February 2004 Revison 0.0 February, 2004 2GB TSOP Registered DIMM Preliminary
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184pin
200mil
72-bit
M312L5620MTS-CB3/A2/B0
M312L5623MTS-CB3/A2/B0
256Mx4(
K4H1G0438M)
128Mx8(
K4H1G0838M)
M312L5623MTS
TSOP 173 g
M312L5620MTS-CB3
m312l5623mts-cb3
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Untitled
Abstract: No abstract text available
Text: 512MB, 1GB, 2GB TSOP Registered DIMM DDR SDRAM DDR SDRAM Registered Module TSOP-II 184pin Registered Module based on 512Mb B-die with 1,700 / 1,200mil Height & 72-bit ECC Revision 1.0 December. 2003 Revison 1.0 December, 2003 512MB, 1GB, 2GB TSOP Registered DIMM
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512MB,
184pin
512Mb
200mil
72-bit
M383L6523BTS-
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PC133 registered reference design
Abstract: No abstract text available
Text: Shrink-TSOP KMM390S6520BN Preliminary PC133 Registered DIMM Revision History Revision 0.0 July 29. 1999, Preliminary - First generation of datasheet. REV. 0.0 July. 1999 Shrink-TSOP KMM390S6520BN Preliminary PC133 Registered DIMM KMM390S6520BN SDRAM DIMM
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KMM390S6520BN
PC133
KMM390S6520BN
64Mx72
32Mx4,
32Mx4
PC133 registered reference design
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Untitled
Abstract: No abstract text available
Text: CIC-40TS-40D-F6-YAM-S 40-Lead TSOP to a 40-Pin DIP 7/97 EXAMPLES TSOP DEVICES: PIN CONFIGURATION: E28F004B3 E28F008B3 E28F016B3 SOCKET: BASE 40-Pin DIP PIN NAMES SOCKET 40-Lead TSOP 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27
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CIC-40TS-40D-F6-YAM-S
40-Lead
40-Pin
E28F004B3
E28F008B3
E28F016B3
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Untitled
Abstract: No abstract text available
Text: CIC-40TS-40D-F6-YAM-S 40-Lead TSOP to a 40-Pin DIP 9/97 EXAMPLES TSOP DEVICES: PIN CONFIGURATION: E28F004B3 E28F008B3 E28F016B3 SOCKET: BASE 40-Pin DIP PIN NAMES SOCKET 40-Lead TSOP 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27
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CIC-40TS-40D-F6-YAM-S
40-Lead
40-Pin
E28F004B3
E28F008B3
E28F016B3
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Untitled
Abstract: No abstract text available
Text: Shrink-TSOP KMM377S6520BN Preliminary 512MB Registered DIMM 512MB Registered DIMM based on 128Mb SDRAM sTSOP2 Revision 0.0 July 1999 Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 July 1999 Shrink-TSOP KMM377S6520BN
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KMM377S6520BN
512MB
128Mb
KMM377S6520BN
64Mx72
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Untitled
Abstract: No abstract text available
Text: Shrink-TSOP KMM464S3323BN Preliminary 144pin SDRAM SODIMM 256MB SDRAM SODIMM based on 128Mb SDRAM sTSOP Revision 0.0 July 1999 Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 July 1999 Shrink-TSOP KMM464S3323BN
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KMM464S3323BN
144pin
256MB
128Mb
KMM464S3323BN
32Mx64
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Untitled
Abstract: No abstract text available
Text: White Electronic Designs W3DG6435V-AD1 256MB – 32Mx64 SDRAM UNBUFFERED FEATURES DESCRIPTION PC100 and PC133 compatible The W3DG6435V is a 32Mx64 synchronous DRAM module which consists of eight 32Mx8 SDRAM components in TSOP II package, and one 2Kb EEPROM in an 8 pin TSOP
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256MB
32Mx64
PC100
PC133
W3DG6435V-AD1
W3DG6435V
32Mx8
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k4h510438b
Abstract: No abstract text available
Text: 512MB, 1GB, 2GB TSOP Registered DIMM Pb-Free DDR SDRAM DDR SDRAM Registered Module 184pin Registered Module based on 512Mb B-die with 1,700 / 1,200mil Height & 72-bit ECC 66 TSOP II with Pb-Free (RoHS compliant) Revision 1.2 Oct. 2004 Revison 1.2 Oct. 2004
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512MB,
184pin
512Mb
200mil
72-bit
M383L6523BUS-CA2/B0/A0
k4h510438b
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Untitled
Abstract: No abstract text available
Text: CIC-40TS-40D-B6-YAM-S REV 2 40-Lead TSOP to a 40-Pin DIP 7/97 (EXAMPLES) TSOP DEVICES: PIN CONFIGURATION: BASE 40-Pin DIP E28F002BC / BL / BV / BX E28F004BE / BL / BV / BX E28F008BE / BV (TE extended temp range) SOCKET: Yamaichi IC191-0402-002N PRICING:
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CIC-40TS-40D-B6-YAM-S
40-Lead
40-Pin
E28F002BC
E28F004BE
E28F008BE
IC191-0402-002N
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WED3DG6435V-D1
Abstract: No abstract text available
Text: WED3DG6435V-D1 -JD1 White Electronic Designs 256MB – 32Mx64 SDRAM UNBUFFERED FEATURES DESCRIPTION The WED3DG6435V is a 32Mx64 synchronous DRAM module which consists of eight 32Mx8 SDRAM components in TSOP II package, and one 2Kb EEPROM in an 8 pin TSOP package for Serial Presence Detect which
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WED3DG6435V-D1
256MB
32Mx64
WED3DG6435V
32Mx8
PC100
PC133
WED3DG6435V-D1
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Untitled
Abstract: No abstract text available
Text: 184pin Registered DDR SDRAM DIMMs based on 512Mb C ver. TSOP This Hynix Registered Dual In-Line Memory Module (DIMM) series consists of 512Mb C ver. DDR SDRAMs in 400mil. TSOP II packages on a 184pin glass-epoxy substrate. This Hynix 512Mb C ver. based Registered DIMM series provide
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184pin
512Mb
400mil.
184-pin
268max
256Mb
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HYMD564M646C
Abstract: d431 DDR266 DDR266B DDR333 DDR400 DDR400B HYMD532M646C hynix ddr hynix ddr sdram
Text: 200pin DDR SDRAM SO-DIMMs based on 512Mb C ver. TSOP This Hynix unbuffered Small Outline, Dual In-Line Memory Module (DIMM) series consists of 512Mb C ver. DDR SDRAMs in 400mil TSOP II packages on a 200pin glass-epoxy substrate. This Hynix 512Mb C ver. based unbuffered
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200pin
512Mb
400mil
200-pin
DDR400,
DDR333
HYMD564M646C
d431
DDR266
DDR266B
DDR400
DDR400B
HYMD532M646C
hynix ddr
hynix ddr sdram
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hynix ddr400 sdram 1Gb
Abstract: DDR200 DDR266 DDR266A DDR266B DDR333 hynix ddr hynix module suffix
Text: 184pin Registered DDR SDRAM DIMMs based on 512Mb C ver. TSOP This Hynix Registered Dual In-Line Memory Module (DIMM) series consists of 512Mb C ver. DDR SDRAMs in 400mil. TSOP II packages on a 184pin glass-epoxy substrate. This Hynix 512Mb C ver. based Registered DIMM series provide
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184pin
512Mb
400mil.
184-pin
256Mb
HYMD525G726CSP4M
hynix ddr400 sdram 1Gb
DDR200
DDR266
DDR266A
DDR266B
DDR333
hynix ddr
hynix module suffix
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Untitled
Abstract: No abstract text available
Text: 200pin DDR SDRAM SO-DIMMs based on 512Mb C ver. TSOP This Hynix unbuffered Small Outline, Dual In-Line Memory Module (DIMM) series consists of 512Mb C ver. DDR SDRAMs in 400mil TSOP II packages on a 200pin glass-epoxy substrate. This Hynix 512Mb C ver. based unbuffered
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200pin
512Mb
400mil
200-pin
DDR400,
512MB,
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Untitled
Abstract: No abstract text available
Text: 200pin DDR SDRAM SO-DIMMs based on 512Mb C ver. TSOP This Hynix unbuffered Small Outline, Dual In-Line Memory Module (DIMM) series consists of 512Mb C ver. DDR SDRAMs in 400mil TSOP II packages on a 200pin glass-epoxy substrate. This Hynix 512Mb C ver. based unbuffered
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200pin
512Mb
400mil
200-pin
DDR400,
512MB,
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Untitled
Abstract: No abstract text available
Text: 184pin Registered DDR SDRAM DIMMs based on 512Mb B ver. TSOP This Hynix Registered Dual In-Line Memory Module (DIMM) series consists of 512Mb B ver. DDR SDRAMs in 400mil. TSOP II packages on a 184pin glass-epoxy substrate. This Hynix 512Mb B ver. based Registered DIMM series provide
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184pin
512Mb
400mil.
184-pin
268max
256Mb
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Untitled
Abstract: No abstract text available
Text: 200pin DDR SDRAM SO-DIMMs based on 512Mb C ver. TSOP This Hynix unbuffered Small Outline, Dual In-Line Memory Module (DIMM) series consists of 512Mb C ver. DDR SDRAMs in 400mil TSOP II packages on a 200pin glass-epoxy substrate. This Hynix 512Mb C ver. based unbuffered
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200pin
512Mb
400mil
200-pin
DDR400,
DDR333
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CIC-40TS-40D-B6-YAM-S
Abstract: E28F008BE
Text: CIC-40TS-40D-B6-YAM-S REV 2 40-Lead TSOP to a 40-Pin DIP Mar-98 (EXAMPLES) TSOP DEVICES: PIN CONFIGURATION: BASE 40-Pin DIP E28F002BC / BL / BV / BX E28F004BE / BL / BV / BX / B5 E28F008BE / BV / B5 (TE extended temp range) SOCKET: Yamaichi IC191-0402-002N
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CIC-40TS-40D-B6-YAM-S
40-Lead
40-Pin
Mar-98
E28F002BC
E28F004BE
E28F008BE
IC191-0402-002N
CIC-40TS-40D-B6-YAM-S
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D431
Abstract: DDR266 DDR266B DDR333 DDR400 DDR400B hynix module suffix DDR333 production drawing
Text: 200pin Unbuffered DDR SDRAM SO-DIMMs based on 512Mb B ver. TSOP This Hynix unbuffered Small Outline, Dual In-Line Memory Module (DIMM) series consists of 512Mb B ver. DDR SDRAMs in 400mil TSOP II packages on a 200pin glass-epoxy substrate. This Hynix 512Mb B ver. based unbuffered
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200pin
512Mb
400mil
200-pin
DDR400,
512MB,
HYMD564M646B
D431
DDR266
DDR266B
DDR333
DDR400
DDR400B
hynix module suffix
DDR333 production drawing
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DDR200
Abstract: DDR266 DDR266A DDR266B DDR333 hynix module suffix
Text: 184pin Registered DDR SDRAM DIMMs based on 512Mb B ver. TSOP This Hynix Registered Dual In-Line Memory Module (DIMM) series consists of 512Mb B ver. DDR SDRAMs in 400mil. TSOP II packages on a 184pin glass-epoxy substrate. This Hynix 512Mb B ver. based Registered DIMM series provide
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184pin
512Mb
400mil.
184-pin
256Mb
HYMD525G726BS
DDR200
DDR266
DDR266A
DDR266B
DDR333
hynix module suffix
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HYMD264646D8J-D43
Abstract: HYMD232646D8J-D43 hynix HYMD264646D8J-D43 DDR266 DDR266A DDR266B DDR333 DDR400 DDR400B 256mb ddr333 200 pin
Text: 184pin Unbuffered DDR SDRAM DIMMs based on 256Mb D ver. TSOP This Hynix unbuffered Dual In-Line Memory Module (DIMM) series consists of 256Mb D ver. DDR SDRAMs in 400 mil TSOP II packages on a 184pin glass-epoxy substrate. This Hynix 256Mb D ver. based unbuffered DIMM series provide
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184pin
256Mb
184-pin
1184pin
512MB,
HYMD264726D
157MAX
HYMD264646D8J-D43
HYMD232646D8J-D43
hynix HYMD264646D8J-D43
DDR266
DDR266A
DDR266B
DDR333
DDR400
DDR400B
256mb ddr333 200 pin
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pc28f00ap33
Abstract: JS28F00AP33BF JS28F512P33BF PC28F00BP33EF PC28F00BP33 JS28F512P33EF PC28F512P33 JS28F512P33 PC28F00AP33EF JS28F512
Text: Numonyx Axcell P33-65nm Flash Memory 512-Mbit , 1-Gbit , 2-Gbit Datasheet Product Features High performance: TSOP: — 105ns initial access time 512-Mbit, 1-Gbit Easy BGA and TSOP: — Buffered Enhanced Factory Programming at 2.0MByte/s (typ) using 512-word buffer
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P33-65nm
512-Mbit
512-Mbit,
100ns
16-word
52MHz
105ns
512-word
46MByte/s
pc28f00ap33
JS28F00AP33BF
JS28F512P33BF
PC28F00BP33EF
PC28F00BP33
JS28F512P33EF
PC28F512P33
JS28F512P33
PC28F00AP33EF
JS28F512
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Untitled
Abstract: No abstract text available
Text: 1C 235 SERIES tsop •Applicable 1C Dimensions FEATURES • Open top type sockets for TSOP packages. • Unique, compact design ensures high-density mounting of burn-in inboards. • Unique contact design ensures outstanding contact reliability especially in monitored burn-in operations.
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OCR Scan
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000MQ
100VDC
700VAC
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