Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TSHA550 Search Results

    SF Impression Pixel

    TSHA550 Price and Stock

    Vishay Semiconductors TSHA5500

    EMITTER IR 875NM 100MA RADIAL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TSHA5500 Bulk 3,614 1
    • 1 $0.56
    • 10 $0.368
    • 100 $0.2432
    • 1000 $0.18778
    • 10000 $0.16968
    		Buy Now

    Vishay Intertechnologies TSHA5501

    Infrared LED, 875nm
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA TSHA5501 37,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    Vishay Intertechnologies TSHA5502

    Infrared LED, 875nm
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA TSHA5502 830
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    Vishay Intertechnologies TSHA5500

    875 NM, GAALAS, INFRARED EMITTING DIODE Infrared LED, 5mm, 1-Element, 875nm
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA TSHA5500 20,960
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    TSHA550 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Type PDF
    TSHA550. Vishay Siliconix GaAlAs Infrared Emitting Diodes in 5 mm (T-1 3/4)Package Original PDF
    TSHA550 Vishay Telefunken GaAlAs Infrared Emitting Diodes in f 5 mm (T-13/4) Package Original PDF
    TSHA5500 Vishay Semiconductors Infrared, UV, Visible Emitters, Optoelectronics, IR EMITTER HIGH EFF. 870NM 5MM 2 Original PDF
    TSHA5500 Vishay Telefunken GaAlAs Infrared Emitting Diodes in Deg 5 mm (T-1 3-4) Package Original PDF
    TSHA5501 Vishay Telefunken GaAlAs Infrared Emitting Diodes in Deg 5 mm (T-1 3-4) Package Original PDF
    TSHA5502 Vishay Telefunken GaAlAs Infrared Emitting Diodes in Deg 5 mm (T-1 3-4) Package Original PDF
    TSHA5503 Vishay Intertechnology GaAlAs Infrared Emitting Diodes in Diameter 5 mm (T- 1 3/4) Package Original PDF
    TSHA5503 Vishay Telefunken GaAlAs Infrared Emitting Diodes in Deg 5 mm (T-1 3-4) Package Original PDF

    TSHA550 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TSHA550

    Abstract: TSHA5500 TSHA5501 TSHA5502 TSHA5503
    Text: TSHA550. GaAlAs Infrared Emitting Diode in ø 5 mm T–1¾ Package Description The TSHA550. series are high-efficiency infrared emitting diodes in GaAlAs on GaAlAs techno- logy, molded in a clear, untinted plastic package. In comparison with the standard GaAs


    Original     		PDF TSHA550. TSHA550 TSHA5500 TSHA5501 TSHA5502 TSHA5503

    Untitled

    Abstract: No abstract text available
    Text: TSHA550. Vishay Telefunken GaAlAs Infrared Emitting Diodes in ø 5 mm T–1¾ Package Description 94 8390 The TSHA550. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs


    Original     		PDF TSHA550. D-74025 20-May-99

    TSHA 5502

    Abstract: Transistor 5503 TSHA550 TSHA5500 TSHA5501 TSHA5502 TSHA5503
    Text: TSHA550. Vishay Telefunken GaAlAs Infrared Emitting Diodes in ø 5 mm T–1¾ Package Description 94 8390 The TSHA550. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs


    Original     		PDF TSHA550. D-74025 20-May-99 TSHA 5502 Transistor 5503 TSHA550 TSHA5500 TSHA5501 TSHA5502 TSHA5503

    Untitled

    Abstract: No abstract text available
    Text: TSHA550. VISHAY Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description The TSHA550. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package.


    Original     		PDF TSHA550. 2002/95/EC 2002/96/EC D-74025 07-Apr-04

    Untitled

    Abstract: No abstract text available
    Text: TSHA550. VISHAY Vishay Semiconductors GaAlAs Infrared Emitting Diodes in ∅ 5 mm T-1¾ Package Description The TSHA550. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs technology these high intensity emitters feature about


    Original     		PDF TSHA550. D-74025 07-Apr-04

    TSHA 5502

    Abstract: TSHA5502 Transistor 5503 TSHA550 TSHA5500 TSHA5501 TSHA5503
    Text: TSHA550. Vishay Telefunken GaAlAs Infrared Emitting Diodes in ø 5 mm T–1¾ Package Description 94 8390 The TSHA550. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs


    Original     		PDF TSHA550. D-74025 20-May-99 TSHA 5502 TSHA5502 Transistor 5503 TSHA550 TSHA5500 TSHA5501 TSHA5503

    Untitled

    Abstract: No abstract text available
    Text: TSHA550. Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description The TSHA550. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs technology these high intensity emitters feature about


    Original     		PDF TSHA550. 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: TSHA550. VISHAY Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description The TSHA550. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package.


    Original     		PDF TSHA550. 2002/95/EC 2002/96/EC 08-Apr-05

    TSHA5500

    Abstract: No abstract text available
    Text: TSHA5500, TSHA5501, TSHA5502, TSHA5503 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Leads with stand-off • Peak wavelength: λp = 875 nm


    Original     		PDF TSHA5500, TSHA5501, TSHA5502, TSHA5503 2002/95/EC 2002/96/EC TSHA550. 18-Jul-08 TSHA5500

    Untitled

    Abstract: No abstract text available
    Text: TSHA5500 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Leads with stand-off • Peak wavelength: λp = 875 nm • High reliability • Angle of half intensity: ϕ = ± 24°


    Original     		PDF TSHA5500 2002/95/EC 2002/96/EC TSHA5500 11-Mar-11

    8015 j

    Abstract: TSHA5500
    Text: TSHA5500 Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Leads with stand-off • Peak wavelength: λp = 875 nm • High reliability • Angle of half intensity: ϕ = ± 24°


    Original     		PDF TSHA5500 2002/95/EC 2002/96/EC TSHA5500 18-Jul-08 8015 j

    Untitled

    Abstract: No abstract text available
    Text: TSHA5500 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Leads with stand-off • Peak wavelength: λp = 875 nm • High reliability • Angle of half intensity: ϕ = ± 24°


    Original     		PDF TSHA5500 2002/95/EC 2002/96/EC TSHA5500 2002/95/EC. 2011/65/EU. JS709A 02-Oct-12

    TSHA550

    Abstract: TSHA5500 TSHA5501 TSHA5502 TSHA5503
    Text: TSHA550. Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description The TSHA550. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs technology these high intensity emitters feature about


    Original     		PDF TSHA550. 08-Apr-05 TSHA550 TSHA5500 TSHA5501 TSHA5502 TSHA5503

    TSHA550

    Abstract: TSHA5500 TSHA5501 TSHA5502 TSHA5503
    Text: TSHA550. Vishay Semiconductors ¾ GaAlAs Infrared Emitting Diodes in ø 5 mm T–1 Package Description 94 8390 The TSHA550. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package.


    Original     		PDF TSHA550. D-74025 20-May-99 TSHA550 TSHA5500 TSHA5501 TSHA5502 TSHA5503

    Untitled

    Abstract: No abstract text available
    Text: TSHA5500 Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Leads with stand-off • Peak wavelength: λp = 875 nm • High reliability • Angle of half intensity: ϕ = ± 24°


    Original     		PDF TSHA5500 2002/95/EC 2002/96/EC TSHA5500 11-Mar-11

    tsha5503

    Abstract: TSHA5502 diode SR 09 TSHA 5502 TSHA5203 TSHA550 TSHA5500 TSHA5501
    Text: TSHA5500, TSHA5501, TSHA5502, TSHA5503 Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES • • • • • • • • • • • Package type: leaded Package form: T-1¾ Dimensions in mm : Ø 5 Leads with stand-off Peak wavelength: λp = 875 nm


    Original     		PDF TSHA5500, TSHA5501, TSHA5502, TSHA5503 2002/95/EC 2002/96/EC TSHA550. 18-Jul-08 tsha5503 TSHA5502 diode SR 09 TSHA 5502 TSHA5203 TSHA550 TSHA5500 TSHA5501

    Untitled

    Abstract: No abstract text available
    Text: TSHA550. VISHAY Vishay Semiconductors GaAlAs Infrared Emitting Diodes in ∅ 5 mm T-1¾ Package Description The TSHA550. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs technology these high intensity emitters feature about


    Original     		PDF TSHA550. D-74025 07-Apr-04

    Untitled

    Abstract: No abstract text available
    Text: TSHA5500 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Leads with stand-off • Peak wavelength: λp = 875 nm • High reliability • Angle of half intensity: ϕ = ± 24°


    Original     		PDF TSHA5500 2002/95/EC 2002/96/EC TSHA5500 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: T emic TSHA550. S e mi f o n d u i t ors GaAlAs Infrared Emitting Diodes in 05mm T-F/O Package Description The TSH A 550. series are high efficiency infrared em it­ ting diodes in G aA lA s on G aA lA s technology, m olded in a clear, untinted plastic package.


    OCR Scan     		PDF TSHA550. syst10 15-Jul-96

    Untitled

    Abstract: No abstract text available
    Text: T em ic TSHA550 S e m i c o n d u c t o r s GaAIAs Infrared Emitting Diodes in 05mm T -l^ Package Description The TSHA550. series are high efficiency infrar ting diodes in GaAIAs on GaAIAs technology, m a clear, untinted plastic package. In comparison with the standard GaAs on GaAs


    OCR Scan     		PDF TSHA550 TSHA550. 15-Jut-96 I5-Jul-96 15-Jul-96

    Untitled

    Abstract: No abstract text available
    Text: Tem ic S e m i c o n d u c t o r s TSHA550. GaAlAs Infrared Emitting Diode in 0 5 mm T -l3/4 Package Description The TSHA550. series are high-efficiency in­ frared emitting diodes in GaAlAs on GaAlAs techno- logy, molded in a clear, untinted plastic package. In comparison with the standard GaAs


    OCR Scan     		PDF TSHA550. Ol-Sep-94 Ol-Sep-96

    U2740B-FP

    Abstract: NPN planar RF transistor 16 bit ic rf encoder programmable read write transponder transistor C892 e5550F-S8 M44C0W RF ENCODER RF 125khz receiver ir preamplifier
    Text: Tem ic S e m i c o n d u c t o r s Selector Guide Remote Control Part Number Function Key Features Package IR Transm itter / Receiver BPV23NF PIN diode IR photo detector, 875 to 950 nm, sensitivity typical 65 ^A TSHA520. IR emitter family High efficiency, ± 12°, 875 nm


    OCR Scan     		PDF BPV23NF TSHA520. TSHA550. U426B-FP U2535B-FP U2538B-FP BFQ62 QFP64 PLCC44 DIP40 U2740B-FP NPN planar RF transistor 16 bit ic rf encoder programmable read write transponder transistor C892 e5550F-S8 M44C0W RF ENCODER RF 125khz receiver ir preamplifier

    ir transmitter receiver

    Abstract: NPN planar RF transistor 4311B U2535B RF amplifier SOT23 5 IC for IR receiver fm transmitter dip 200 hn ir remote decoder IC rf transmitter receiver
    Text: Tem ic Semiconductors # * SOT23 SOT143 S08 DIP16 ► SOK SS028 Remote Control/ Keyless Entry ICs Part Number Function Key Features Package Source IR Transmitter / Receiver BPV23NF PIN diode see Opto section IR photo detector, 875 to 950 nm, sensitivity typical 65 |UA


    OCR Scan     		PDF OT143 DIP16 SS028 BPV23NF TSHA520x TSHA550x 2535B 4311B-FS 4311B 4313B ir transmitter receiver NPN planar RF transistor U2535B RF amplifier SOT23 5 IC for IR receiver fm transmitter dip 200 hn ir remote decoder IC rf transmitter receiver

    CQX48B

    Abstract: TLH04400 TLRG542
    Text: V I^ ^ Y Vishay Telefunken Table of Virtual Source Sizes Part Nunber Virtual Source Size mm Part Nunber Virtual Source Size (mm) Part Nunber Virtual Source Size (mm) TLBR5410 3.6 TLHP5800 3.7 TLLY5401 3.7 TLDR4400 2.1 TLHR4200 1.5 TLMA3100 1.8 TLDR4900 2


    OCR Scan     		PDF TLBR5410 TLDR4400 TLDR4900 TLDR5400 TLDR5800 TLHE4900 TLHE5100 TLHE5101 TLHE5102 TLHE5800 CQX48B TLH04400 TLRG542