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    Untitled

    Abstract: No abstract text available
    Text: TSF10U45C thru TSF10U60C creat by ART Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability


    Original     		PDF TSF10U45C TSF10U60C 2011/65/EU 2002/96/EC ITO-220AB JESD22-B102 D1401030

    Untitled

    Abstract: No abstract text available
    Text: Preliminary TSF10U45C Dual High-Voltage Trench MOS Barrier Schottky Rectifier ITO-220AB Features ² Trench MOS Schottky technology ² Low forward voltage drop, low power losses ² High efficiency operation ² Solder bath temperature 245±5℃, per JESD22-B102D for ITO-220AB package


    Original     		PDF ITO-220AB TSF10U45C JESD22-B102D ITO-220AB 2002/95/EC 2002/96/EC TSF10100C