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    Vishay Semiconductors TSAL7200

    EMITTER IR 940NM 100MA RADIAL
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    TSAL7200 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TSAL7200 Vishay Intertechnology GaAs/GaAlAs IR Emitting Diode in diam 5 mm (T-1 3/4) Package Original PDF

    TSAL7200 Datasheets Context Search

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    TSAL7200

    Abstract: No abstract text available
    Text: TSAL7200 Vishay Telefunken GaAs/GaAlAs IR Emitting Diode in ø 5 mm T–1¾ Package Description 94 8389 TSAL7200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in a clear plastic package. In comparison with the standard GaAs on GaAs


    Original
    PDF TSAL7200 TSAL7200 D-74025 20-May-99

    TSAL7200

    Abstract: No abstract text available
    Text: TSAL7200 Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : ∅ 5 • Peak wavelength: λp = 940 nm • High reliability • High radiant power • High radiant intensity


    Original
    PDF TSAL7200 2002/95/EC 2002/96/EC TSAL7200 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: TSAL7200 VISHAY Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSAL7200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in a clear plastic package. In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength.


    Original
    PDF TSAL7200 TSAL7200 08-Apr-05

    high power infrared led

    Abstract: TSAL7200
    Text: TSAL7200 Vishay Semiconductors High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : ∅ 5 • Peak wavelength: λp = 940 nm • High reliability • High radiant power


    Original
    PDF TSAL7200 2002/95/EC 2002/96/EC TSAL7200 18-Jul-08 high power infrared led

    Untitled

    Abstract: No abstract text available
    Text: TSAL7200 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • • • • • • • • • • • • 94 8389 DESCRIPTION Package type: leaded Package form: T-1¾ Dimensions in mm : Ø 5 Peak wavelength: λp = 940 nm


    Original
    PDF TSAL7200 2002/95/EC 2002/96/EC TSAL7200 2002/95/EC. 2011/65/EU. JS709A 02-Oct-12

    TSAL7200

    Abstract: No abstract text available
    Text: TSAL7200 Vishay Semiconductors ¾ GaAs/GaAlAs IR Emitting Diode in ø 5 mm T–1 Package Description 94 8389 TSAL7200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in a clear plastic package. In comparison with the standard GaAs on GaAs


    Original
    PDF TSAL7200 TSAL7200 D-74025 20-May-99

    Untitled

    Abstract: No abstract text available
    Text: TSAL7200 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • • • • • • • • • • • • 94 8389 DESCRIPTION Package type: leaded Package form: T-1¾ Dimensions in mm : Ø 5 Peak wavelength: λp = 940 nm


    Original
    PDF TSAL7200 2002/95/EC 2002/96/EC TSAL7200 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: TSAL7200 Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : ∅ 5 • Peak wavelength: λp = 940 nm • High reliability • High radiant power • High radiant intensity


    Original
    PDF TSAL7200 TSAL7200 2002/95/EC 2002/96/EC 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: TSAL7200 Vishay Telefunken GaAs/GaAlAs IR Emitting Diode in ø 5 mm T–1¾ Package Description 94 8389 TSAL7200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in a clear plastic package. In comparison with the standard GaAs on GaAs


    Original
    PDF TSAL7200 TSAL7200 D-74025 20-May-99

    Untitled

    Abstract: No abstract text available
    Text: TSAL7200 VISHAY Vishay Semiconductors GaAs/GaAlAs IR Emitting Diode in ∅ 5 mm T-1¾ Package Description TSAL7200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in a clear plastic package. In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength.


    Original
    PDF TSAL7200 TSAL7200 D-74025 11-May-04

    TSAL7200

    Abstract: No abstract text available
    Text: TSAL7200 VISHAY Vishay Semiconductors GaAs/GaAlAs IR Emitting Diode in ∅ 5 mm T-1¾ Package Description TSAL7200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in a clear plastic package. In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength.


    Original
    PDF TSAL7200 TSAL7200 D-74025 07-Apr-04

    Untitled

    Abstract: No abstract text available
    Text: TSAL7200 Vishay Telefunken ¾ GaAs/GaAlAs IR Emitting Diode in ø 5 mm T–1 Package Description 94 8389 TSAL7200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in a clear plastic package. In comparison with the standard GaAs on GaAs


    Original
    PDF TSAL7200 TSAL7200 D-74025 20-May-99

    TSAL7200

    Abstract: No abstract text available
    Text: TSAL7200 Vishay Telefunken GaAs/GaAlAs IR Emitting Diode in ø 5 mm T–1¾ Package Description 94 8389 TSAL7200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in a clear plastic package. In comparison with the standard GaAs on GaAs


    Original
    PDF TSAL7200 TSAL7200 D-74025 20-May-99

    Untitled

    Abstract: No abstract text available
    Text: TSAL7200 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSAL7200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in a clear plastic package. In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength.


    Original
    PDF TSAL7200 TSAL7200 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: TSAL7200 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • • • • • • • • • • • • 94 8389 DESCRIPTION Package type: leaded Package form: T-1¾ Dimensions in mm : Ø 5 Peak wavelength: λp = 940 nm


    Original
    PDF TSAL7200 2002/95/EC 2002/96/EC TSAL7200 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: TSAL7200 VISHAY Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSAL7200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in a clear plastic package. In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength.


    Original
    PDF TSAL7200 TSAL7200 D-74025 01-Oct-04

    Untitled

    Abstract: No abstract text available
    Text: TSAL7200 VISHAY Vishay Semiconductors GaAs/GaAlAs IR Emitting Diode in ∅ 5 mm T-1¾ Package Description TSAL7200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in a clear plastic package. In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength.


    Original
    PDF TSAL7200 TSAL7200 D-74025 11-May-04

    TSAL7200

    Abstract: No abstract text available
    Text: TSAL7200 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSAL7200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in a clear plastic package. In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength.


    Original
    PDF TSAL7200 TSAL7200 08-Apr-05

    sharp laser diodes

    Abstract: TSOP855
    Text: VISHAY INTERTECHNO L O G Y , INC . INTERACTIVE data book ir receiver modules vishay semiconductors vse-db0090-1010 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents


    Original
    PDF vse-db0090-1010 sharp laser diodes TSOP855

    A 69157 scr

    Abstract: 65k5 HEDS 5300 HCPL-900J-000E HCPL 0636 DT 8210 IC hcpl788 hcpl 1360 HEDS 8210 83K3
    Text: NON-VISIBLE OPTOELECTRONICS Find Datasheets Online DETECTORS • ENCODERS DETECTORS SCHMITT TRIGGER DETECTORS CONT. PLASTIC PACKAGING Price Each Max. Radiant Operating Output Threshold Range Vcc Mfg. Part No. Fig. Circuit (mW/cm2) (V) Stock No. 2 Buffer


    Original
    PDF 90F8548 SDP8600-001 95F5325 SDP8371-001 28H5849 28H5850 OPB933W55Z 08F2750 OPB963T55 08F2755 A 69157 scr 65k5 HEDS 5300 HCPL-900J-000E HCPL 0636 DT 8210 IC hcpl788 hcpl 1360 HEDS 8210 83K3

    tept5600 response time

    Abstract: Application NOTES TSAL4400 BPV11F Photo interrupter application notes SMD Transistor 1020 "Photo Interrupter" dual transistor CNY70 cny70 datasheet TEMT6000 TCND5000
    Text: w w w. v i s h a y. c o m Selector Guide Infrared Emitters, Photo Detectors and optical sensors Op t o e l e c t r o n i cs V I S HAY INTERTE C HNOLO G Y , IN C . infrared emitters, Photo Detectors, and Optical Sensors introduction as one of the world’s leading suppliers of infrared emitters, photo detectors, and optical sensors, Vishay offers an extraordinarily


    Original
    PDF emit4-9337-2920 VSA-SG0041-0512 tept5600 response time Application NOTES TSAL4400 BPV11F Photo interrupter application notes SMD Transistor 1020 "Photo Interrupter" dual transistor CNY70 cny70 datasheet TEMT6000 TCND5000

    Leader 8020 schematics Oscilloscope

    Abstract: smd diode schottky code marking GW sn 16848 APPLICATION NOTE BpW77 IEC-60050 BPw104 PHOTO TRANSISTOR BPW77 BPW34 PHOTODIODE THEORY Marking Code SMD databook 2010 bpw104s
    Text: VISHAY INTERTECHNO L O G Y , INC . INTERACTIVE data book infrared emitters and detectors vishay semiconductors vse-db0103-0810 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents


    Original
    PDF vse-db0103-0810 Leader 8020 schematics Oscilloscope smd diode schottky code marking GW sn 16848 APPLICATION NOTE BpW77 IEC-60050 BPw104 PHOTO TRANSISTOR BPW77 BPW34 PHOTODIODE THEORY Marking Code SMD databook 2010 bpw104s

    3 mm ir receiver

    Abstract: TSAL6200* transmitter TSAL6200 transmitter Telefunken ir receiver very long range ir remote control TSAL4400 ir transmitter receiver sensors TSAL5100 TSAL7200 TSAL6200
    Text: Vishay Telefunken General Overview of IR Transmission in Free Space The free air IR data transmission, IR remote control as well as the most optoelectronic sensors and light barrier systems work with a wavelength between 870nm and 950nm. The emitter and detector


    Original
    PDF 870nm 950nm. 3 mm ir receiver TSAL6200* transmitter TSAL6200 transmitter Telefunken ir receiver very long range ir remote control TSAL4400 ir transmitter receiver sensors TSAL5100 TSAL7200 TSAL6200

    TSAL7200

    Abstract: No abstract text available
    Text: TSAL7200 Vishay Telefunken GaAs/GaAIAs IR Emitting Diode in Package 0 5 mm T-VA Description TSAL7200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in a clear plastic package. In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant


    OCR Scan
    PDF TSAL7200 TSAL7200 D-74025 21-Sep-98