TRW RF TRANSISTOR Search Results

TRW RF TRANSISTOR Result Highlights (6)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL
TK7R0E08QM	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB

TRW RF TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
AN5337 ca3028 Abstract: ca3028a AN5337 CA3028B trw rf transistor ca3028 trw RF POWER TRANSISTOR AN5337 equivalent RF amplifiers in the HF and VHF JB22 Text: Application of the CA3028 and Integrated-Circuit RF Amplifiers in the HF and VHF Ranges Application Note Introduction The CA3028A and CA3028B integrated circuits are singlestage differential amplifiers. Each circuit also contains a constant-current transistor and suitable biasing resistors. The	Original	PDF	CA3028 CA3028A CA3028B 100MHz CA3028A CA3028B AN5337 ca3028 AN5337 trw rf transistor trw RF POWER TRANSISTOR AN5337 equivalent RF amplifiers in the HF and VHF JB22
HBT transistor Abstract: trw rf transistor trw 131* RF POWER TRANSISTOR trw RF POWER TRANSISTOR HBT transistor GaAs TA0025 Text: TA0025 TA0025 Heterojunction Bipolar Transistor - Reliable, High Quality Solutions at a Very Low Cost Yet even with such high acceptance, there are still some lingering perceived disadvantages associated	Original	PDF	TA0025 1980s HBT transistor trw rf transistor trw 131* RF POWER TRANSISTOR trw RF POWER TRANSISTOR HBT transistor GaAs TA0025
trw rf Abstract: ACRIAN trw rf transistors acrian inc trw transistors TRW MICROWAVE acrian rf power FUJITSU MICROWAVE MRF648 TPM4130 Text: UHF AND MICROWAVE TRANSISTORS Item Number Part Number Manufacturer Max V BR CBO foac Max Gp Po N.F. at fT••t Ie Max (W) (Vl (Hz) (dB) (W) jdB) (Hz) JA) PD Mati. Toper Max jOe) Package Style UHFIMicrowave Transistors, Bipolar NPN (Cont'd) 5 10 UMOB55 RZ2731B60W	Original	PDF	UMOB55 RZ2731B60W RZ2833B60W RZ3135B50W OME25 OME30L MKB12100W5 BAL0204 UMIL60 UMIL70 trw rf ACRIAN trw rf transistors acrian inc trw transistors TRW MICROWAVE acrian rf power FUJITSU MICROWAVE MRF648 TPM4130
transistor 835 Abstract: HBT transistor TRW mmic RF2152 TA0032 trw rf transistor Text: TA0032 TA0032 RF2152: A 3V HBT Power Amplifier for CDMA/AMPS Handsets Figure 1: PSSOP-16 Package Outline A high power, high efficiency, low cost power amplifier has been developed utilizing commercial gallium arsenide GaAs heterojunction bipolar transistor (HBT)	Original	PDF	TA0032 RF2152: PSSOP-16 RF2152 28dBm 27dBm 10dBm transistor 835 HBT transistor TRW mmic TA0032 trw rf transistor
RF2131 Abstract: TA0013 trw rf transistor HBT transistor Text: TA0013 TA0013 RF2131: New High Efficiency HBT Analog Cellular Power Amplifier RF Micro Devices introduces a new power amplifier for Analog Cellular applications based on revolutionary HBT Heterojunction Bipolar Transistor technology.	Original	PDF	TA0013 RF2131: 824MHz 849MHz 420mA 16-lead RF2131 Bm/30kHz, TA0013 trw rf transistor HBT transistor
TPV 3100 Abstract: TPM-4100 application note transistor TPV 3100 trw rf disadvantages of Magic tee trw rf semiconductors TPV-3100 TPV3100 108AN zf transmission Text: Order this document by AN1034/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN1034 THREE BALUN DESIGNS FOR PUSH-PULL AMPLIFIERS Single RF power transistors seldom satisfy today’s design criteria; several devices in separate packages1, or in the same package balanced, push-pull or dual transistors , must	Original	PDF	AN1034/D AN1034 TPV 3100 TPM-4100 application note transistor TPV 3100 trw rf disadvantages of Magic tee trw rf semiconductors TPV-3100 TPV3100 108AN zf transmission
RF2108 Abstract: cellular phone amplifier power control transistor trw rf transistor 48v battery charger schematic diagram schematic diagram 48v battery charger TA0-011 Helical antenna mtbf schematic diagram 48V automatic battery charger TA0011 Text: TA0011 TA0011 RF2108: A Linear, High Efficiency, HBT, CDMA Power Amplifier RF Micro Devices introduces a new linear power amplifier for CDMA applications based on their HBT Heterojunction Bipolar Transistor technology. This power	Original	PDF	TA0011 RF2108: 29dBm 16-lead RF2108 27dBm cellular phone amplifier power control transistor trw rf transistor 48v battery charger schematic diagram schematic diagram 48v battery charger TA0-011 Helical antenna mtbf schematic diagram 48V automatic battery charger TA0011
TPV 3100 Abstract: TPV-3100 trw rf semiconductors tpv3100 transistor TPV 3100 motorola balun trw rf motorola balun an TPM-4100 application note motorola semiconductor RF CATALOG Text: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR APPLICATION NOTE Order this document by AN1034/D AN1034 Freescale Semiconductor, Inc. Three Balun Designs for PushĆPull Amplifiers Single RF power transistors seldom satisfy today’s design criteria; several devices in separate packages1, or in the	Original	PDF	AN1034/D AN1034 TPV 3100 TPV-3100 trw rf semiconductors tpv3100 transistor TPV 3100 motorola balun trw rf motorola balun an TPM-4100 application note motorola semiconductor RF CATALOG
RF Micro Devices Abstract: No abstract text available Text: TA0001 TA0001 Advantages of HBT 1. High linearity 2. Very wide frequency response F max higher than 50GHz 3. High voltage breakdown greater than 20 volts 4. High gain per stage resulting in high efficiency designs 5. Very low parasitics resulting in high Q capacitors	Original	PDF	TA0001 50GHz RF Micro Devices
trw RF POWER TRANSISTOR Abstract: trw rf transistor RF2123 TA0012 HBT transistor gsm cellular power amplifier trw rf transistors Text: TA0012 TA0012 RF2123: New High Power, High Efficiency HBT GSM Power Amplifier efficiency is extremely important. Sixty percent total efficiency for a two-stage, 30dB gain GSM power amplifier IC is ideal for maximizing talk time – a key	Original	PDF	TA0012 RF2123: RF2123 16-lead trw RF POWER TRANSISTOR trw rf transistor TA0012 HBT transistor gsm cellular power amplifier trw rf transistors
trw rf transistor Abstract: HBT transistor RF2123 cellular phone amplifier power control transistor TA0012 Class AB AMPLIFIER 4W trw RF POWER TRANSISTOR Text: TA0012 TA0012 RF2123: New High Power, High Efficiency HBT GSM Power Amplifier efficiency is extremely important. Sixty percent total efficiency for a two-stage, 30dB gain GSM power amplifier IC is ideal for maximizing talk time – a key	Original	PDF	TA0012 RF2123: RF2123 16-lead trw rf transistor HBT transistor cellular phone amplifier power control transistor TA0012 Class AB AMPLIFIER 4W trw RF POWER TRANSISTOR
BD291 Abstract: 2SC3883 SD1534-8 2S-C3883 bd292 trw rf transistors 2SC2198 Sanken NPN SD1428 2N5034 2N5035 Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO PD Max r hFE fT 'CBO Max Max Mln (Hz) (A) (8) on ON) 100 100 100 100 100 100 50 50 50 50 50 100 50 218 218 30 30 75 75 75 75 75 75 75 75 80 60 60 70 80 22 22 22 22 22	Original	PDF	DTS802 DTS804 STI802 STI804 2SC3658 2SC3883 2SD1455 2SD1911 BD291 SD1534-8 2S-C3883 bd292 trw rf transistors 2SC2198 Sanken NPN SD1428 2N5034 2N5035
trw RF POWER TRANSISTOR Abstract: C33825 trw rf transistor trw 131* RF POWER TRANSISTOR TRW mmic HBT transistor RF2152 TA0032 POUT315 3.5V HBT MMIC Amplifier Text: TA0032 TA0032 RF2152: A 3V HBT Power Amplifier for CDMA/AMPS Handsets The RF2152 is the latest addition to a family of power amplifiers introduced by RF Micro Devices RFMD utilizing GaAs HBT technology. This commercially proven	Original	PDF	TA0032 RF2152: RF2152 trw RF POWER TRANSISTOR C33825 trw rf transistor trw 131* RF POWER TRANSISTOR TRW mmic HBT transistor TA0032 POUT315 3.5V HBT MMIC Amplifier
CA2850R Abstract: trw RF POWER TRANSISTOR ELECTRONIC BALLAST 236 trw rf transistor trw rf hybrid amp trw hybrid 100MHZ Text: JL T R ü ELEK CMPNT/ R F DË\| 0025054 GOOBTIO 4 \| RF Devices Division TRW Electronic Components Group T CA2850R - " 7 * - 0 9 - 0 1 CA2850RThin Film RF Linear Hybrid Amplifier All Gold Monometallic) Metallization System Featuring Gold Transistor Die with Diffused Emitter	OCR Scan	PDF	GOOHI10 CA2850R CA2850R 40dBm CA28S0R -32dB trw RF POWER TRANSISTOR ELECTRONIC BALLAST 236 trw rf transistor trw rf hybrid amp trw hybrid 100MHZ

trw RF POWER TRANSISTOR Abstract: trw rf transistor Text: T BFP181T/BFP181TW/BFP181 TRW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ M Applications For low noise and high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA.	OCR Scan	PDF	BFP181T/BFP181TW/BFP181 BFP181TW BFP181TRW BFP181T 20-Jan-99 1-408-97echnical D-74025 trw RF POWER TRANSISTOR trw rf transistor
TPV3100 Abstract: TPV364 TP9380 244c-01 TP9383 TPV-3100 TPV-595A TPV3250B TPV5055B TPV385 Text: RI CHARDS ON ELECTRONICS " T -i. ijw .m ,r\| n n - 2>\|^Ol u. •.v 14E DI 7734ÖC\|ä Q0G0Sfl2 ^ - - 7— dH T h r* t iMrr i RF Transistors tor Broadcast Applications Motorola/TRW 88-108 MHz, FM Broadcast Band Device Pout Output PowerWatts Pm Input Power	OCR Scan	PDF	TP9380 TP9383 TP9390 TPV394A TPV364 TPV385 TPV375 TPV387 TPV376 TPV3100 TPV3100 244c-01 TPV-3100 TPV-595A TPV3250B TPV5055B
trw RF POWER TRANSISTOR Abstract: trw rf transistor TRW J03037 J03037 trw rf trw transistor trw J03037 RF POWER TRANSISTOR transistor TRW TRW POWER J0303 Text: 8825024 T R W ELEK CMPNT, DE \| ö f l 5 S 0 E 4 R F OODiaTti S RF Devices Division TRW Electronic Components Group T-33-13 J03037 U H F R F Power Transistor • 20:1 V S W R • Common Emitter • Isolated Package • Internally Matched • 37 Watts • 12.5 VCC	OCR Scan	PDF	T-33-13 J03037 470MHz 470MHz trw RF POWER TRANSISTOR trw rf transistor TRW J03037 J03037 trw rf trw transistor trw J03037 RF POWER TRANSISTOR transistor TRW TRW POWER J0303
trw RF POWER TRANSISTOR Abstract: trw rf transistor trw resistors trw rf semiconductors TRW MICROWAVE TRW2307 TRW CAP TRW2304 TRW 2003 transistor TRW Text: DE I RF Devices Division ôfl55GE4 0D035fl7 1 TRW Electronic Components Group 8825024 T R W ELEK CMPNT, R F 89D 03587 D TRW2307 Microwave Power Transistor • * • • • C o m m o n B a se G o ld M etalized H erm etic 1 to 3 G H z “T X ” Screenabie	OCR Scan	PDF	fl55G24 TRW2307 50j/F, TRW2304 50fjF, trw RF POWER TRANSISTOR trw rf transistor trw resistors trw rf semiconductors TRW MICROWAVE TRW2307 TRW CAP TRW2304 TRW 2003 transistor TRW
TRW2001 Abstract: TRW2003 trw 2015 TRW2020 trw 2001 TRW201 TRW2010 TRW MICROWAVE trw rf transistors TRW2005 Text: M OTORCLA SC XSTRS/R F 12E D \| t>Bt75Sll Ü0ÖÖ372 0 \| T MOTOROLA SEMICONDUCTOR TECHNICAL DATA TRW2000 Series The RF Line M icrowave Pow er Transistors , . . designed primarily for wideband, large-signal output and driver amplifier stages in the 1 to 2.3 GHz frequency range.	OCR Scan	PDF	Bt75Sl TRW2000 171eC TRW2003 TRW2005 TRW2010 TRW2001 trw 2015 TRW2020 trw 2001 TRW201 TRW MICROWAVE trw rf transistors
trw RF POWER TRANSISTOR Abstract: trw rf transistor trw transistors LT 9228 trw 131* RF POWER TRANSISTOR trw rf semiconductors 2023-12 TRW 52604 TP 9382 trw hybrid Text: TR W RF SEMICONDUCTORS CATALOG 1981 EUROPEAN EDITION TABLE OF CONTENTS Pages • • • • INTRODUCTION. Q U A LITY .	OCR Scan	PDF
MRA0610 Abstract: MRA0610-40A MRA0610-18A MRA0610-3 MRA0610-9 trw rf semiconductors Text: MRA0610-3, MRA0610-9, MRA0610-18A, MRA0610-40A MIC roAMP P-Band Class C Power Transistors • • • • • • • 3 to 40 Watts Broadband 600-1000 MHz Internally Compensated* Gold Metalized Diffused Ballast Resistors MTTF Data Common Base M R A .25 Electrical C h a ra cte ristics fT,	OCR Scan	PDF	mra0610-9, mra0610-18a, MRA0610-3 MRA0610-9 10-18A MRA0610-40A mra0610-3, mra061018a, mra061040a MRA0610 MRA0610-40A MRA0610-18A trw rf semiconductors
LT 5224 diode Abstract: lt 5224 Diode LT 5224 0PI3152 0PI3252 OPI3152 OPI3252 Text: OPTEK TECHNOLOGY INC ObE D \| h7^flSÛ0 0000250 3 \| 1987 Cost Saver Product! TRW for morB information! Optoelectronics Division T R W Electronic Com ponents Group # ÊXW W Ca\|, Product Bulletin 5224 January 1985 ‘ Optically Coupled Isolators Types OPI3152, 0PI3252	OCR Scan	PDF	OPI3152, 0PI3252 n\-25Â 0PI3152. 75UUH a/1603; LT 5224 diode lt 5224 Diode LT 5224 0PI3152 0PI3252 OPI3152 OPI3252
c4231 Abstract: c4231 transistor trw RF POWER TRANSISTOR THC4231 trw rf transistor THC4231X1B THC4231X1V Text: JH AT THC4231 ttxw w Wide Bandwidth Fast Settling Operational Amplifier 165MHz Closed Loop Bandwidth The THC4231 is a wide bandwidth fast settling opera tional amplifier designed specifically for high-speed, lowgain applications. The op amp design is based on current	OCR Scan	PDF	THC4231 165MHz THC4231 anD-883 T0-8/M0-12) THC4231X1V c4231 c4231 transistor trw RF POWER TRANSISTOR trw rf transistor THC4231X1B THC4231X1V
TRW63601 Abstract: No abstract text available Text: MOTOROLA SC XSTRS/R F 12E D \| b3b725M 0000451 T -'b 'b -V l T \| MOTOROLA SEMICONDUCTOR TECHNICAL DATA TRW63601 The RF Line M ic ro w a v e P o w e r O s c illa to r T ra n s is to r MICROWAVE POWER OSCILLATOR TRANSISTOR . designed for use as power oscillators at frequencies to 3.5 GHz with guaranteed	OCR Scan	PDF	b3b725M TRW63601 TRW63601

TRW RF TRANSISTOR Search Results

TRW RF TRANSISTOR Result Highlights (6)

TRW RF TRANSISTOR Datasheets Context Search

AN5337 ca3028

HBT transistor

trw rf

transistor 835

RF2131

TPV 3100

RF2108

TPV 3100

RF Micro Devices

trw RF POWER TRANSISTOR

trw rf transistor

BD291

trw RF POWER TRANSISTOR

CA2850R

trw RF POWER TRANSISTOR

TPV3100

trw RF POWER TRANSISTOR

trw RF POWER TRANSISTOR

TRW2001

trw RF POWER TRANSISTOR

MRA0610

LT 5224 diode

c4231

TRW63601