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    RZ2833B60W Search Results

    RZ2833B60W Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    RZ2833B60W Philips Semiconductors Pulsed Microwave Power Transistor Original PDF

    RZ2833B60W Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    trw rf

    Abstract: ACRIAN trw rf transistors acrian inc trw transistors TRW MICROWAVE acrian rf power FUJITSU MICROWAVE MRF648 TPM4130
    Text: UHF AND MICROWAVE TRANSISTORS Item Number Part Number Manufacturer Max V BR CBO foac Max Gp Po N.F. at fT••t Ie Max (W) (Vl (Hz) (dB) (W) jdB) (Hz) JA) PD Mati. Toper Max jOe) Package Style UHFIMicrowave Transistors, Bipolar NPN (Cont'd) 5 10 UMOB55 RZ2731B60W


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    PDF UMOB55 RZ2731B60W RZ2833B60W RZ3135B50W OME25 OME30L MKB12100W5 BAL0204 UMIL60 UMIL70 trw rf ACRIAN trw rf transistors acrian inc trw transistors TRW MICROWAVE acrian rf power FUJITSU MICROWAVE MRF648 TPM4130

    RZ2833B60W

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE ObE J> bfc.53131 0015257 5 RZ2833B60W T " 3 ^ - » ^ PU LSED M ICRO W AVE POW ER T R A N SIST O R NPN silicon planar epitaxial microwave power transistor, intended for use in a common-base class-C broadband pulse power amplifier with a frequency range o f 2,8 to 3,3 GHz.


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    PDF RZ2833B60W RZ2833B60W

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE ObE D bbSB'm 0015257 2 RZ2833B60W T -3 -3 - \ ^ PULSED MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended fo r use in a common-base class-C broadband pulse power amplifier w ith a frequency range o f 2,8 to 3,3 GHz.


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    PDF RZ2833B60W

    MX0912B250Y

    Abstract: RV2833B5X RV3135B5X RX1214B150W RX1214B300Y RZ1214B125Y RZ1214B35Y RZ1214B65Y RZ2731B16W MRB11175Y
    Text: N AMER P H I L I P S / D I S C R E T E 5SE 3> • bbSH^! OOltiSBl 0 ■ T'-J3 3 “' ^ / Power Devices 53 MICROWAVE TRANSISTORS TYPE NO. PACKAGE OUTLINE f GHz Vcc (Vi ' U m @ DUTY CYCLE I (%> . Pi. (W> A - ; VC (%) RADAR PULSED L-BAND RZ1214B35Y FO-57C 1.2 - 1.4


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    PDF RZ1214B35Y FO-57C RZ1214B65Y RZ1214B125Y RX1214B150W FO-91 RX1214B300Y MX0912B250Y RV2833B5X RV3135B5X RZ2731B16W MRB11175Y

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE 5SE D • bbSHiai 0011.231 ■ ^ 3 3 ~ \ Power Devices MICROWAVE TRANSISTORS TYPE NO. PACKAGE OUTLINE < G H z Vcc (V) U 1.2 - 1.4 1.2 -1 .4 1 .2 -1 .4 1.2 - 1.4 1 .2 -1 .4 1.2 - 1.4 1 .2 -1 .4 1.2 - 1.4 1 .2 -1 .4 1.2 - 1.4 42 50


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    PDF RZ1214B35Y FO-57C RZ1214B65Y RZ1214B125Y RX1214B150W MRB11175Y MRB11350Y MSB11900Y

    FET BFW10

    Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11
    Text: INDEX _ INDEX OF TYPE NUM BERS The inclusion of a type number in this publication does not necessarily imply its availability. Type no. book section Type no. book section Type no. book section BA220 BA221 BA223 BA281 BA314 SCOI SCOI SCOI SCOI


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    PDF BA220 BA221 BA223 BA281 BA314 BA315 BA316 BA317 BA318 BA423 FET BFW10 KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11