ieee802.11b
Abstract: No abstract text available
Text: CGB 240B Datasheet 2-Stage Bluetooth & WLAN InGaP HBT Power Amplifier Description: The CGB240B GaAs power amplifier MMIC has been especially developed for wireless LAN applications in the 2.4 - 2.5 GHz ISM band, compliant with IEEE 802.11b standards. The chip is also fully compliant with Bluetooth
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CGB240B
22dBm,
-33dB
IEEE802
ieee802.11b
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Untitled
Abstract: No abstract text available
Text: GaAs MMIC CGB240B Preliminary Data Sheet • 2-stage InGaP HBT power amplifier for WLAN and Bluetooth applications • ACPR / IP3 tested to be compliant with IEEE802.11b standard • Fully compliant with Bluetooth requirements dual-mode use • Single voltage supply
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CGB240B
IEEE802
CGB240B
BluetooCGB240B
P-TSSOP-10-2
TSSOP10
Version01
J-STD-033
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Untitled
Abstract: No abstract text available
Text: CGB 240 Datasheet 2-Stage Bluetooth InGaP HBT Power Amplifier Description: Applications: • Bluetooth Class 1 The CGB240 GaAs Power Amplifier MMIC has been especially developed for wireless applications in the 2.4 - 2.5 GHz ISM band e.g. Bluetooth class 1 . Its
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CGB240
IEEE802
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Untitled
Abstract: No abstract text available
Text: TR3006HS • Designed for Short-Range Wireless Data Communications • Supports RF Data Transmission Rates Up to 115.2 kbps • 3 V, Low Current Operation plus Sleep Mode • Stable, Easy to Use, Low External Parts Count • Complies with Directive 2002/95/EC RoHS
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TR3006HS
2002/95/EC
TR3006HS
stabl065
TR1006HS
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TR8001
Abstract: 2506033017YO TR1001 transceiver RFM
Text: TR8001 • Designed for Short-Range Wireless Data Communications • Supports RF Data Transmission Rates Up to 115.2 kbps • 3 V, Low Current Operation plus Sleep Mode • Up to 10 mW Transmitter Power 868.35 MHz Hybrid Transceiver The TR8001 hybrid transceiver is ideal for short-range wireless data applications where robust
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TR8001
TR8001
SM3-20H
TR8000-08172007
2506033017YO
TR1001
transceiver RFM
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Untitled
Abstract: No abstract text available
Text: YDA158 D-4HP2 MONAURAL 2.6W Non-Clip DIGITAL AUDIO POWER AMPLIFIER Outline The YDA158 D-4HP2 is a 2.6W (RL=4Ω）x1ch Class-D amplifier with a capless stereo headphone amplifier and receiver output. Its superior sound quality, the lowest level of distortion and noise are achieved
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YDA158
YDA158
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SST65P542R
Abstract: No abstract text available
Text: Remote Controller MCU SST65P542R SST65P542RMicrocontroller Advance Information FEATURES: • 8-bit MCU Core – Enhanced 6502 Microprocessor Megacell emulating the reduced 6805 instruction set • 4 MHz Typical Oscillator Clock Frequency • 8 MHz Maximum Oscillator Clock Frequency
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SST65P542R
SST65P542RMicrocontroller
MS-013
28-LEAD
S71170-03-000
SST65P542R
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YDA158
Abstract: YDA158-PZ MONAURAL 2.6W Non-Clip DIGITAL AUDIO POWER AMPLIFIER YDA158-QZ classd audio amplifier yamaha yamaha audio power amp circuits PD25 PD85 QFN32
Text: YDA158 D-4HP2 MONAURAL 2.6W Non-Clip DIGITAL AUDIO POWER AMPLIFIER Outline The YDA158 D-4HP2 is a 2.6W (RL=4Ω）x1ch Class-D amplifier with a capless stereo headphone amplifier and receiver output. Its superior sound quality, the lowest level of distortion and noise are achieved
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YDA158
YDA158
LSI-4DA158A20
YDA158-PZ
MONAURAL 2.6W Non-Clip DIGITAL AUDIO POWER AMPLIFIER
YDA158-QZ
classd audio amplifier
yamaha
yamaha audio power amp circuits
PD25
PD85
QFN32
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EPD3330
Abstract: 614k EM65168 SEG80
Text: EPD3330 RISC II Series Microcontroller Product Specification DOC. VERSION 2.5 ELAN MICROELECTRONICS CORP. January 2008 Trademark Acknowledgments: IBM is a registered trademark and PS/2 is a trademark of IBM Windows is a trademark of Microsoft Corporation ELAN and ELAN logo
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EPD3330
EPD3330
614k
EM65168
SEG80
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MSTAR
Abstract: 07K75 tr2c sge1 amd elan ePS6610 SEG22 SEG23 7815 AA
Text: ePS6610 RISC II Series Microcontroller Product Specification DOC. VERSION 1.0 ELAN MICROELECTRONICS CORP. March 2010 Trademark Acknowledgments: IBM is a registered trademark and PS/2 is a trademark of IBM. Windows is a trademark of Microsoft Corporation. ELAN and ELAN logo
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ePS6610
MSTAR
07K75
tr2c
sge1
amd elan
ePS6610
SEG22
SEG23
7815 AA
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elcon b 10k resistor
Abstract: elan touch stylus EPH3600 tr2c 614k 0X00 elan touch pad elcon b 100k resistor D2089
Text: EPH3600 RISC II Series Microcontroller Product Specification DOC. VERSION 0.1 ELAN MICROELECTRONICS CORP. October 2007 Trademark Acknowledgments: IBM is a registered trademark and PS/2 is a trademark of IBM. Windows is a trademark of Microsoft Corporation.
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EPH3600
elcon b 10k resistor
elan touch stylus
EPH3600
tr2c
614k
0X00
elan touch pad
elcon b 100k resistor
D2089
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bq 8050
Abstract: 614k R33h 1838 ir receiver SE 7889 ic 8050
Text: ePG3231 RISC II-2G Series Microcontroller Product Specification DOC. VERSION 2.5 ELAN MICROELECTRONICS CORP. November 2005 Trademark Acknowledgments: IBM is a registered trademark and PS/2 is a trademark of IBM Windows is a trademark of Microsoft Corporation
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ePG3231
ma100
QFP-128L
QFP128
POD-035
ePG3231
bq 8050
614k
R33h
1838 ir receiver
SE 7889
ic 8050
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UDA1380
Abstract: UDA1380TT HVQFN32 TSSOP32 UDA1380HN SDC31 uda1380 board
Text: INTEGRATED CIRCUITS DATA SHEET UDA1380 Stereo audio coder-decoder for MD, CD and MP3 Product specification Supersedes data of 2003 Apr 04 2004 Apr 22 NXP Semiconductors Product specification Stereo audio coder-decoder for MD, CD and MP3 UDA1380 CONTENTS 1
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UDA1380
R30/04/pp68
UDA1380
UDA1380TT
HVQFN32
TSSOP32
UDA1380HN
SDC31
uda1380 board
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NC-206 32.768kHz
Abstract: EPD8000 QFP208 lvdi q elcon 233082
Text: EPD8000 TM ELAN RISC II Series Product Specification DOC. VERSION 2.2 ELAN MICROELECTRONICS CORP. October 2008 Trademark Acknowledgments: IBM is a registered trademark and PS/2 is a trademark of IBM Windows is a trademark of Microsoft Corporation ELAN and ELAN logo
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EPD8000
NC-206 32.768kHz
EPD8000
QFP208
lvdi q
elcon
233082
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Untitled
Abstract: No abstract text available
Text: Thick Film Chip Resistors Low Resistance for 1206 TA-I No TRL-120S004B page 1/9 1. Scope : This specification applies for the RL12(1206) of thick film chip resistors made by TA-I. Conductor : 2. Construction: (Lead-free or with lead ) Over Coat Sn Plating
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TRL-120S004B
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Untitled
Abstract: No abstract text available
Text: M O SEL V IT E L IC V53C8258L UL TRA-HIGH SPEED, 3.3 VOLT256K X 8 BIT EDO PAGE MODE CMOS DYNAMIC RAM PR&BMBBOtt HIGH PERFORMANCE 60 Max. RAS Access Time, tRAC 60 ns Max. Column Address Access Time, (t^M ) 30 ns Min. Extended Data Out Page Mode Cycle Time, (tPC)
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V53C8258L
VOLT256K
Interval--512
28-pin
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Untitled
Abstract: No abstract text available
Text: in te i’ 51C256L LOW POWER 256K X 1 CHMOS DYNAMIC RAM 51C256L-15 51C256L-20 Maximum Access Time ns 150 200 Maximum CHMOS Standby Current (mA) 0.1 0.1 • Low Power Data Retention ■ TTL and HCT Compatible — Standby current, CHMOS — 100 ¡¡A (max.)
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51C256L
51C256L-15
51C256L-20
51C256L
S1C256L
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Untitled
Abstract: No abstract text available
Text: P U E L M M A m in t e i C 1P O C Q L LOW POWER 64Kx4 CHMOS DYNAMIC RAM 51C259L-12 120 0.1 Maximum Access Time ns Maximum CHMOS Standby Current (mA) 51C259L-15 150 51C259L-20 200 0.1 0.1 • TTL And HC Compatible Low Power Data Retention - Standby current, CHMOS — 100 /iA
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64Kx4
51C259L-12
51C259L-15
51C259L-20
51C259L
51C259L
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Untitled
Abstract: No abstract text available
Text: in t e l 5 1 C259HL HIGH PERFORMANCE LOW POWER STATIC COLUMN 64K x 4 CHMOS DYNAMIC RAM 5 1 C 2 5 9 H L -1 5 5 1 C 2 5 9 H L -2 0 150 Maximum Access Time ns 200 Maximum Column Address Access Time (ns) 70 90 Maximum CHM OS Standby Current (mA) 0.1 0.1 Static Column Mode Operation
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C259HL
51C259HL
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Abstract: No abstract text available
Text: in te i’ 51C256HL HIGH PERFORMANCE LOW POWER RIPPLEMODE 256K X 1 CHMOS DYNAMIC RAM 51C256HL-15 51C256HL-20 Maximum Access Time ns 150 200 Maximum Column Address Access Time (ns) 70 90 Maximum CHtyOS Standby Current (mA) 0.1 0.1 Ripplemode Operation
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51C256HL
51C256HL-15
51C256HL-20
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Abstract: No abstract text available
Text: irrte1* M51C256H HIGH PERFORMANCE RIPPLEMODETm 256K x 1 CHMOS DYNAMIC RAM M ilita ry M51C256H-15 M51C256H-20 Maximum Access Time ns 150 200 Maximum Column Address Access Time (ns) 70 90 High Reliability Ceramic— 16 Pin DIP Ripplem ode Operation — Continuous Data Rate over 12 MHz
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M51C256H
M51C256H-15
M51C256H-20
M51C256H
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Untitled
Abstract: No abstract text available
Text: in te T 51C256HL HIGH PERFORMANCE LOW POWER RIPPLEMODE 256K X 1 CHMOS DYNAMIC RAM 51C256HL-15 51C256HL-20 Maximum Access Time ns 150 200 Maximum Column Address Access Time (ns) 70 90 Maximum CHMOS Standby Current (mA) 0.1 0.1 Ripplemode Operation Low Power Data Retention
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51C256HL
51C256HL-15
51C256HL-20
51C256HL
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Untitled
Abstract: No abstract text available
Text: P ^ E U iÄ M 8 Y ir r t e T 51C258Lt LOW POWER 64K x 4 CHMOS DYNAMIC RAM Maximum Access Time ns Maximum CHMOS Standby Currant (mA) 51C258L-12 120 0.1 • Low Power Data Retention - Standby current, CHMOS — 100 pA (max.) - Refresh period, RAS-Only — 32 ms
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51C258Lt
51C258L-12
51C258L-15
51C258L
51C258L
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Untitled
Abstract: No abstract text available
Text: IF^iyßälDKlÄl^f i n t e i s i rO K Q I LOW POWER 64K x 4 CHMOS DYNAMIC RAM 5 1 C 2 59 L -1 S 5 1 C 2 5 9 L -2 0 Maximum Access Time ns 15 0 20 0 Maximum CHMOS Standby Current (mA) 0.1 0.1 Low Power Data Retention - Standby current, CHMOS 10O/xA (max.) _
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10O/xA
230/xA
51C259L
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