QS6U24
Abstract: TSMT6 QS6M4
Text: QS6M4 Transistors Small switching QS6M4 zExternal dimensions Unit : mm TSMT6 2.8 1.6 2.9 (6) (4) (3) (5) (2) 0.4 (1) 1pin mark 0.85 0.16 zFeatures 1) The QS6U24 combines Pch Trench MOSFET with a Nch Trench MOSFET in a single TSMT6 package. 2) Pch Trench MOSFET and Nch Trench MOSFET
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QS6U24
TSMT6
QS6M4
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diode TA 20-08
Abstract: P-channel Trench MOSFET MOSFET with Schottky Diode schottky diode 100A DIODE marking 8L MOSFET 20V 100A Bi-Directional P-Channel mosfet
Text: SPC4703 P-Channel Trench MOSFET with Schottky Diode DESCRIPTION The SPC4703combines the Trench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an DFN3X2-8L package. The Trench MOSFET is the P-Channel enhancement mode power
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SPC4703
SPC4703combines
-20V/-3
diode TA 20-08
P-channel Trench MOSFET
MOSFET with Schottky Diode
schottky diode 100A
DIODE marking 8L
MOSFET 20V 100A
Bi-Directional P-Channel mosfet
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so8 footprint
Abstract: sot669 package SO8 package PSMN026-80YS sot669 PSMN012-100YS PSMN1R2-25YL PSMN1R3-30YL PSMN1R5-25YL PSMN1R7-30YL
Text: New Trench 6 MOSFETs in a Power-SO8 package 25 V to 100 V MOSFETs in Power-SO8 We’ve extended our range of Trench 6 MOSFETs with new devices at 60 V and 100 V in the LFPAK SOT669 package. NXP leads the way with its range of Trench 6 MOSFETs in LFPAK (Loss Free PAcKage). By combining Trench 6 silicon
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OT669)
PSMN5R5-60YS)
so8 footprint
sot669 package
SO8 package
PSMN026-80YS
sot669
PSMN012-100YS
PSMN1R2-25YL
PSMN1R3-30YL
PSMN1R5-25YL
PSMN1R7-30YL
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ISL9N2357D3ST
Abstract: N2357 n2357d
Text: ISL9N2357D3ST Data Sheet June 2002 30V, 0.007 Ohm, 35A, N-Channel UltraFET Trench Power MOSFET UltraFET® Trench UltraFET® Trench from Fairchild is a new advanced MOSFET technology that achieves the lowest possible onresistance per silicon area while maintaining fast switching
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ISL9N2357D3ST
5600pF
ISL9N2357D3ST
N2357
n2357d
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P-Channel MOSFET code 1A
Abstract: P-channel Trench MOSFET Bi-Directional P-Channel mosfet SPC6801 SPC6801ST6RG 6P marking P-channel MOSFET VGS -25V
Text: SPC6801 P-Channel Trench MOSFET with Schottky Diode DESCRIPTION The SPC6801combines the Trench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an TSOP-6P package. The Trench MOSFET is the P-Channel enhancement mode power field effect
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SPC6801
SPC6801combines
-30V/-2
105ise
P-Channel MOSFET code 1A
P-channel Trench MOSFET
Bi-Directional P-Channel mosfet
SPC6801
SPC6801ST6RG
6P marking
P-channel MOSFET VGS -25V
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Schottky Diode 20V 5A
Abstract: Bi-Directional P-Channel mosfet IR P-Channel mosfet SPC6801 SPC6801ST6RG P-Channel MOSFET code 1A
Text: SPC6801 P-Channel Trench MOSFET with Schottky Diode DESCRIPTION The SPC6801combines the Trench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an TSOP-6P package. The Trench MOSFET is the P-Channel enhancement mode power field effect
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SPC6801
SPC6801combines
-30V/-2
105ise
Schottky Diode 20V 5A
Bi-Directional P-Channel mosfet
IR P-Channel mosfet
SPC6801
SPC6801ST6RG
P-Channel MOSFET code 1A
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tea1761
Abstract: heat sink to220 Silicon controller rectifier TEA1750 package to220 PSMN1R6-30PL PSMN5R0-80PS PSMN2R0-30PL PSMN7R6-60PS PSMN3R0-60PS
Text: New high-performance Trench 6 MOSFETs in a TO220 package for power management applications Giving you more choice with an extended portfolio of Trench 6 MOSFETs in TO220 We’ve extended our range of Trench 6 MOSFETs with new devices in the industry-standard TO220
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Untitled
Abstract: No abstract text available
Text: SNN0310Q Advanced N-Ch Trench MOSFET 100V, 3A N-Channel Power Trench MOSFET Features • Max. RDS ON = 150m at VGS = 10V, ID = 2A Low gate charge: Qg=18nC (Typ.) High performance trench technology for extremely low RDS(on) 100% avalanche tested
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SNN0310Q
OT-223
24-NOV-11
KSD-T5A012-000
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TO220 package
Abstract: PSMN4R3-30PL PSMN trench PSMN012-80PS PSMN050-80PS PSMN1R6-30PL PSMN2R0-30PL PSMN2R2-40PS PSMN4R4-80PS
Text: Ten new high-performance Trench 6 MOSFETs in a TO220 package for power supply and motion control Giving you more choice with an extended portfolio of Trench 6 MOSFETs in TO220 We’ve extended our range of Trench 6 MOSFETs with ten new devices in the industry-standard
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Untitled
Abstract: No abstract text available
Text: PRODUCT DETAIL Part Num: IXUV170N075S Description: POWER DEVICES > DISCRETE MOSFETs > N-Channel: Trench-Gate Power MOSFETs > 75V 1st Generation Trench Gate Power MOSFETs Configuration: Single Package Style: PLUS-220 SMD Status: Active Part Parameter IXUV170N075S
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IXUV170N075S
PLUS-220
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N310AS
Abstract: N310AP ISL9N310AP3 ISL9N310AS3 ISL9N310AS3ST
Text: ISL9N310AP3/ISL9N310AS3ST/ISL9N310AS3 N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.
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ISL9N310AP3/ISL9N310AS3ST/ISL9N310AS3
1800pF
N310AS
N310AP
ISL9N310AP3
ISL9N310AS3
ISL9N310AS3ST
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ISL9N303AP3
Abstract: ISL9N303AS3 ISL9N303AS3ST N303AP N303AS diode marking 41a on semiconductor KP20
Text: PWM Optimized ISL9N303AP3 / ISL9N303AS3ST / ISL9N303AS3 N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 3.2mΩ General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining
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ISL9N303AP3
ISL9N303AS3ST
ISL9N303AS3
7000pF
ISL9N303AS3
N303AP
N303AS
diode marking 41a on semiconductor
KP20
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KMD7D5P
Abstract: kmd7d5p40qa 40QA
Text: SEMICONDUCTOR KMD7D5P40QA TECHNICAL DATA P-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as low on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly suitable for battery protection circuit.
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KMD7D5P40QA
100ms
KMD7D5P
kmd7d5p40qa
40QA
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N303AP
Abstract: M043 Diode ISL9N303AP3 ISL9N303AS3 ISL9N303AS3ST N303AS
Text: PWM Optimized ISL9N303AP3 / ISL9N303AS3ST / ISL9N303AS3 N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 3.2mΩ General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining
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ISL9N303AP3
ISL9N303AS3ST
ISL9N303AS3
7000pF
N303AP
M043 Diode
ISL9N303AS3
N303AS
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n318ad
Abstract: ISL9N318AD3ST
Text: ISL9N318AD3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching
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ISL9N318AD3ST
900pF
O-252
n318ad
ISL9N318AD3ST
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N316AD
Abstract: No abstract text available
Text: ISL9N316AD3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching
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ISL9N316AD3ST
1450pF
O-252
N316AD
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n327ad
Abstract: ISL9N327AD3ST
Text: ISL9N327AD3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching
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ISL9N327AD3ST
910pF
O-252
n327ad
ISL9N327AD3ST
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n312ad
Abstract: 69E-10
Text: ISL9N312AD3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching
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ISL9N312AD3ST
1450pF
O-252
n312ad
69E-10
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N306AD
Abstract: N306A
Text: ISL9N306AD3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching
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ISL9N306AD3ST
3400pF
O-252
N306AD
N306A
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1E25
Abstract: No abstract text available
Text: ISL9N302AS3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching
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ISL9N302AS3ST
110nC,
11000pF
O-263AB
1E25
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KMD7D5P
Abstract: KMD7D5P40QA
Text: SEMICONDUCTOR KMD7D5P40QA TECHNICAL DATA P-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as low on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly suitable for H battery protection circuit.
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KMD7D5P40QA
KMD7D5P
KMD7D5P40QA
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n327ad
Abstract: N327 ISL9N327AD3ST TO-252 MOSFET
Text: ISL9N327AD3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching
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ISL9N327AD3ST
910pF
O-252
n327ad
N327
ISL9N327AD3ST
TO-252 MOSFET
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MDD1754
Abstract: MDD1754RH MagnaChip Semiconductor Ltd. MDD1754 4000P mosfet low vgs
Text: N-Channel Trench MOSFET, 40V, 20.5A, 27mΩ General Description Features The MDD1754 uses advanced MagnaChip’s Trench MOSFET Technology to provided high performance in onstate resistance, switching performance and reliability. VDS = 40V ID=20.5A VGS=10V
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MDD1754
MDD1754
MDD1754RH
MagnaChip Semiconductor Ltd. MDD1754
4000P
mosfet low vgs
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MDS3754
Abstract: MDS3754RH P-Channel mosfet 40V P-channel Trench MOSFET
Text: P-Channel Trench MOSFET, -40V, -6.0A, 45mΩ General Description Features The MDS3754 uses advanced Magnachip’s Trench MOSFET Technology to provided high performance in onstate resistance, switching performance and reliability. VDS = -40V ID = -6.0 @ VGS = -10V
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MDS3754
MDS3754
MDS3754RH
P-Channel mosfet 40V
P-channel Trench MOSFET
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