Untitled
Abstract: No abstract text available
Text: RSQ030P03 Transistor 4V Drive Pch MOS FET RSQ030P03 zStructure Silicon P-channel MOS FET zExternal dimensions Unit : mm TSMT6 1.0MAX 2.9 1.9 0.95 0.95 zFeatures 1) Low On-resistance.(90mΩ at 4.5V) 2) High Power Package. (PD=1.25w) 3) High speed switching.
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RSQ030P03
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Untitled
Abstract: No abstract text available
Text: RTQ025P02 Transistor 2.5V Drive Pch MOS FET RTQ025P02 zExternal dimensions Unit : mm zStructure Silicon P-channel MOSFET TSMT6 zFeatures 1) Low On-resistance.(140mΩ at 2.5V) 2) High Power Package. 3) High speed switching. 4) Low voltage drive.(2.5V) 1.0MAX
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RTQ025P02
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RTQ025P02
Abstract: No abstract text available
Text: RTQ025P02 Transistor 2.5V Drive Pch MOS FET RTQ025P02 zExternal dimensions Unit : mm zStructure Silicon P-channel MOSFET TSMT6 zFeatures 1) Low On-resistance.(140mΩ at 2.5V) 2) High Power Package. 3) High speed switching. 4) Low voltage drive.(2.5V) 1.0MAX
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RTQ025P02
RTQ025P02
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RTQ040P02
Abstract: No abstract text available
Text: RTQ040P02 Transistors 2.5V Drive Pch MOS FET RTQ040P02 zStructure Silicon P-channel MOS FET TSMT6 1.0MAX 2.9 1.9 0.95 0.95 zFeatures 1 Low on-resistance. 60mΩ at 2.5V) 2) High power package. 3) High speed switching. 4) Low voltage drive. (2.5V) (5) 0.85
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RTQ040P02
RTQ040P02
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Untitled
Abstract: No abstract text available
Text: RSQ030P03FRA RSQ030P03 Transistor AEC-Q101 Qualified 4V Drive Pch MOS FET RSQ030P03FRA RSQ030P03 zExternal dimensions Unit : mm zStructure Silicon P-channel MOS FET TSMT6 1.0MAX 2.9 1.9 0.95 0.95 (5) 0.7 (4) 1.6 2.8 (6) 0.85 (2) (1) 0~0.1 (3) 1pin mark 0.16
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RSQ030P03FRA
RSQ030P03
AEC-Q101
RSQ030P03FRuipment
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RTQ020N03
Abstract: No abstract text available
Text: RTQ020N03 Transistors 2.5V Drive Nch MOS FET RTQ020N03 zStructure Silicon N-channel MOS FET zExternal dimensions Unit : mm TSMT6 1.0MAX 2.9 1.9 0.95 0.95 zFeatures 1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 3) Low voltage drive (2.5V drive).
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RTQ020N03
RTQ020N03
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RSQ020N03
Abstract: No abstract text available
Text: RSQ020N03 Transistors 4V Drive Nch MOSFET RSQ020N03 zStructure Silicon N-channel MOSFET zDimensions Unit : mm TSMT6 1.0MAX 2.9 1.9 0.95 0.95 zFeatures 1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). (5) 0.85 0.7 (4) 1.6 2.8 (6)
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RSQ020N03
RSQ020N03
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Untitled
Abstract: No abstract text available
Text: 1.5V Drive Nch MOSFET RUQ050N02 Structure Silicon N-channel MOSFET Dimensions Unit : mm TSMT6 Features 1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 3) 1.5V drive Applications Switching Each lead has same dimensions
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RUQ050N02
R1010A
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Untitled
Abstract: No abstract text available
Text: QS6U24 Transistor 4V Drive Pch+SBD MOS FET QS6U24 Structure Silicon P-channel MOS FET Schottky Barrier DIODE External dimensions Unit : mm TSMT6 1.0MAX 2.9 1.9 0.95 0.95 Features 1) The QS6U24 combines Pch MOS FET with a Schottky barrier diode in a TSMT6 package.
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QS6U24
QS6U24
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Untitled
Abstract: No abstract text available
Text: RVQ040N05 Nch 45V 4A Power MOSFET Datasheet lOutline VDSS 45V RDS on (Max.) 53mW ID 4A PD 1.25W lFeatures (6) TSMT6 (5) (4) (1) (2) (3) lInner circuit 1) Low on - resistance. (1) (2) (3) (4) (5) (6) 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT6).
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RVQ040N05
R1120A
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Untitled
Abstract: No abstract text available
Text: RRQ045P03 Datasheet Pch -30V -4.5A Power MOSFET lOutline VDSS -30V RDS on (Max.) 35mW ID -4.5A PD 1.25W lFeatures (6) TSMT6 (5) (4) (1) (2) (3) lInner circuit 1) Low on - resistance. (1) (2) (3) (4) (5) (6) 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT6).
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RRQ045P03
R1120A
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Untitled
Abstract: No abstract text available
Text: RTQ020N05 Datasheet Nch 45V 2A Power MOSFET lOutline VDSS 45V RDS on (Max.) 190mW ID 2A PD 1.25W (6) (5) TSMT6 (4) (1) (2) lFeatures (3) lInner circuit 1) Low on - resistance. (1) (2) (3) (4) (5) (6) 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT6).
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RTQ020N05
190mW
R1120A
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Untitled
Abstract: No abstract text available
Text: RSQ015N06 Datasheet Nch 60V 1.5A Power MOSFET lOutline VDSS 60V RDS on (Max.) 290mW ID 1.5A PD 1.25W lFeatures (6) TSMT6 (5) (4) (1) (2) (3) lInner circuit 1) Low on - resistance. (1) (2) (3) (4) (5) (6) 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT6).
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RSQ015N06
290mW
R1120A
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RSQ025P03
Abstract: No abstract text available
Text: RSQ025P03 Transistor DC-DC Converter -30V, -2.5A RSQ025P03 zExternal dimensions (Units : mm) zFeatures 1) Low On-resistance.(120mΩ at 4.5V) 2) High Power Package.(PD=1.25W) 3) High speed switching. 4) Low voltage drive.(4V) TSMT6 2.8 0.85 2.9 (4) (5) (6)
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RSQ025P03
RSQ025P03
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QS6M4
Abstract: No abstract text available
Text: QS6M4 Transistors Small switching QS6M4 zExternal dimensions Unit : mm TSMT6 2.8 1.6 0.85 Each lead has same dimensions zApplications Load switch, inverter Abbreviated symbol : M04 zEquivalent circuit zStructure Silicon P-channel MOS FET Silicon N-channel MOS FET
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Text: RSQ015N06 Nch 60V 1.5A Power MOSFET Datasheet lOutline VDSS 60V RDS on (Max.) 290mW ID 1.5A PD 1.25W lFeatures (6) TSMT6 (5) (4) (1) (2) (3) lInner circuit 1) Low on - resistance. (1) (2) (3) (4) (5) (6) 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT6).
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RSQ015N06
290mW
R1120A
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K01 equivalent
Abstract: No abstract text available
Text: QS6K1 Transistors Switching 30V, 1.0A QS6K1 zExternal dimensions (Unit : mm) TSMT6 Continuous Drain current Pulsed Source current Continuous (Body diode) Pulsed Total power dissipation (TC=25°C) Channel temperature Storage temperature (2) (3) 0.4 +0.1 −0.05
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RSQ030P03
Abstract: No abstract text available
Text: RSQ030P03 Transistor DC-DC Converter −30V, −3A RSQ030P03 zExternal dimensions (Units : mm) zFeatures 1) Low On-resistance.(90mΩ at 4.5V) 2) High Power Package. 3) High speed switching. 4) Low voltage drive.(4.5V) TSMT6 2.8 0.85 2.9 (4) (5) (6) 0.16
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RSQ030P03
RSQ030P03
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Untitled
Abstract: No abstract text available
Text: RSQ020N03FRA Nch 30V 2A Power MOSFET Datasheet AEC-Q101 Qualified lOutline VDSS 30V RDS on (Max.) 134mW ID 2.0A PD 1.25W (6) TSMT6 (5) (4) (1) (2) (3) lInner circuit lFeatures 1) Low on - resistance. (1) (2) (3) (4) (5) (6) 2) Built-in G-S Protection Diode.
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RSQ020N03FRA
AEC-Q101
134mW
R1102A
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Untitled
Abstract: No abstract text available
Text: 1.5V Drive Pch+Pch MOSFET QS6J11 zDimensions Unit : mm zStructure Silicon P-channel MOSFET TSMT6 1.0MAX 2.9 1.9 0.95 0.95 zFeatures 1) Two Pch MOSFET transistors in a single TSMT6 package. 2) Low on-state resistance with a fast switching. 3) Low voltage drive (1.5V).
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QS6J11
R0039A
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RSQ025P03
Abstract: No abstract text available
Text: RSQ025P03 Transistor 4V Drive Pch MOS FET RSQ025P03 zStructure Silicon P-channel MOS FET zExternal dimensions Unit : mm TSMT6 1.0MAX 2.9 1.9 0.95 0.95 zFeatures 1) Low On-resistance.(120m: at 4.5V) 2) High Power Package.(PD=1.25W) 3) High speed switching.
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RSQ025P03
RSQ025P03
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RZQ045P01
Abstract: No abstract text available
Text: RZQ045P01 Transistors 1.5V Drive Pch MOSFET RZQ045P01 zDimensions Unit : mm zStructure Silicon P-channel MOSFET TSMT6 1.0MAX 2.9 1.9 0.95 0.95 zFeatures 1) Low on-resistance. 2) High power package. 3) Low voltage drive. (1.5V) (5) 0.85 0.7 (4) 1.6 2.8 (6)
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RZQ045P01
RZQ045P01
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RRQ045P03
Abstract: No abstract text available
Text: 4V Drive Pch MOSFET RRQ045P03 zDimensions Unit : mm zStructure Silicon P-channel MOSFET TSMT6 1.0MAX 2.9 1.9 0.95 0.95 zFeatures 1) Low On-resistance. 2) High Power Package. 3) High speed switching. (5) 0.7 (4) 1.6 2.8 (6) 0.85 (2) 0~0.1 0.3~0.6 (1) (3)
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RRQ045P03
R0039A
RRQ045P03
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Untitled
Abstract: No abstract text available
Text: SURFBOARDS THE BREADBOARDING MEDIUM FOR R SURFACE MOUNT TM 33000 SERIES APPLICATION SPECIFIC ADAPTERS MODEL ACCEPTS THESE DEVICES 33206 SOT-26, SOT-457 SC-59-6, SC-74-R TSOT-23-6, TSOP-6 B Mini-6-G2 Mini-6-DA RENESAS WSOF 6 PIN ROHM SMD6, SMT6, TSMT6 T.I.
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OT-26,
OT-457
SC-59-6,
SC-74-R
TSOT-23-6,
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