transistor BA sot-23
Abstract: A1015LT1 pnp transistor A1 sot-23 SOT-23 marking BA A1015 ba marking sot-23
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors A1015LT1 SOT—23 ) TRANSISTOR( PNP 1. BASE 2. EMITTER 3. COLLECTOR FEATURES ELECTRICAL CHARACTERISTICS(Tamb=25℃ Parameter Symbol 1.0 Power dissipation PCM :
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OT-23
A1015LT1
OT--23
-100A
30MHz
037TPY
950TPY
550REF
022REF
transistor BA sot-23
A1015LT1
pnp transistor A1 sot-23
SOT-23 marking BA
A1015
ba marking sot-23
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors A1015 TRANSISTOR PNP TO—92 1.EMITTER FEATURES Power dissipation 2.COLLECTOR 3.BASE MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol VCBO Parameter Value Units
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A1015
-100mA,
-10mA
30MHz
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A1015 sot-23
Abstract: No abstract text available
Text: WILLAS FM120-M A1015 THRU FM1200-M SOT-23 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produ SOD-123+ PACKAGE Package outline Features process design, excellent power dissipation offers TRANSISTOR• Batch
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OT-23
OD-123+
FM120-M
A1015
FM1200-M
OT-23
OD-123H
FM120-MH
FM130-MH
FM140-MH
A1015 sot-23
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a1015 transistor
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors A1015 TRANSISTOR PNP TO-92 1.EMITTER FEATURES z Power dissipation 2.COLLECTOR 3.BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO
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A1015
-100mA,
-10mA
30MHz
a1015 transistor
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A1015 gr
Abstract: transistor A1015 GR A1015 transistor A1015 a1015 transistor Transistor TO-92 A1015 A1015 y A1015 PNP TRANSISTOR A1015 TO92 equivalent transistor A1015
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors A1015 TRANSISTOR PNP TO-92 1.EMITTER FEATURES z Power dissipation 2.COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter VCBO 3.BASE Value Units
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A1015
-100mA,
-10mA
30MHz
A1015 gr
transistor A1015 GR
A1015
transistor A1015
a1015 transistor
Transistor TO-92 A1015
A1015 y
A1015 PNP TRANSISTOR
A1015 TO92
equivalent transistor A1015
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 A1015 TRANSISTOR Plastic-Encapsulate Transistors SOT-23 PNP FEATURES High voltage and high current VCEO:=-50V(min.),IC=-150mA(max.) z Excellent hFE Linearity hFE (2)=80(Typ.) at VCE=-6V,IC=-150mA
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OT-23
A1015
-150mA
-150mA
C1815
-10mA
30MHz
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A1015 sot-23
Abstract: A1015 A1015 BA transistor A1015 a1015 transistor C1815 br a1015 c1815 SOT-23 A1015 DATASHEET equivalent transistor A1015
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 A1015 TRANSISTOR Plastic-Encapsulate Transistors PNP SOT-23 FEATURES High voltage and high current Excellent hFE Linearity Low niose Complementary to C1815 z z z z 1. BASE 2. EMITTER 3. COLLECTOR
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OT-23
A1015
C1815
-10mA
30MHz
A1015 sot-23
A1015
A1015 BA
transistor A1015
a1015 transistor
C1815
br a1015
c1815 SOT-23
A1015 DATASHEET
equivalent transistor A1015
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 A1015 TRANSISTOR Plastic-Encapsulate Transistors PNP SOT-23 FEATURES High voltage and high current Excellent hFE Linearity Low niose Complementary to C1815 z z z z 1. BASE 2. EMITTER 3. COLLECTOR
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OT-23
A1015
C1815
-10mA
30MHz
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors A1015 TRANSISTOR( PNP ) TO—92 1.EMITTER FEATURES 2.COLLECTOR Power dissipation PCM : 0.4 W(Tamb=25℃) Collector current ICM : -0.15 A Collector-base voltage
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A1015
30MHz
270TYP
050TYP
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Untitled
Abstract: No abstract text available
Text: TO-92 Plastic-Encapsulate Transistors A1015 TRANSISTOR PNP TO—92 1.EMITTER FEATURES Power dissipation 2.COLLECTOR 3.BASE MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol VCBO Parameter Value Units Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage
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A1015
-100mA,
-10mA
30MHz
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors A1015LT1 TRANSISTOR PNP SOT-23 1. BASE FEATURES 2. EMITTER 3. COLLECTOR W (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current -0.15 A ICM: Collector-base voltage
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OT-23
A1015LT1
OT-23
-10mA
30MHz
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A1015 transistor
Abstract: transistor A1015 br a1015 Transistor TO-92 A1015 transistor A1015 GR A1015 A1015 PNP TRANSISTOR A1015 gr A1015 y pnp a1015
Text: TO-92 Plastic-Encapsulate Transistors PNP A1015 A1015 TRANSISTOR (PNP) TO-92 1. EMITTER FEATURES 2. COLLECTOR Power dissipation 3. BASE PCM: 0.4 W (Tamb=25℃) Collector current ICM: -0.15 A Collector-base voltage -50 V V(BR)CBO: Operating and storage junction temperature range
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A1015
-100mA,
-10mA
30MHz
A1015 transistor
transistor A1015
br a1015
Transistor TO-92 A1015
transistor A1015 GR
A1015
A1015 PNP TRANSISTOR
A1015 gr
A1015 y
pnp a1015
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A1015 gr
Abstract: A1015 y transistor A1015 A1015 A1015 TO92 A1015 equivalent br a1015 A1015 DATASHEET A1015 gr W A1015-pnp
Text: A1015 PNP General Purpose Transistors TO-92 P b Lead Pb -Free 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 MAXIMUM RATINGS* (TA=25°C unless otherwise noted) Rating Symbol Value Unit Collector-Emitter Voltage VCEO -50 V Collector-Base Voltage VCBO -50 V Emitter-Base Voltage
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A1015
30MHz
14-Feb-06
270TYP
A1015 gr
A1015 y
transistor A1015
A1015
A1015 TO92
A1015 equivalent
br a1015
A1015 DATASHEET
A1015 gr W
A1015-pnp
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Untitled
Abstract: No abstract text available
Text: SOT-23 Plastic-Encapsulate Transistors A1015LT1 TRANSISTOR PNP SOT-23 1. BASE FEATURES 2. EMITTER 3. COLLECTOR W (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current -0.15 A ICM: Collector-base voltage -50 V V(BR)CBO: Operating and storage junction temperature range
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OT-23
A1015LT1
OT-23
-10mA
30MHz
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DIODE S4 08
Abstract: vn3205p-g VN3205N8-G diode sot-89 marking code S1
Text: VN3205 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► These enhancement-mode normally-off transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with
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VN3205
MS-001,
DSFP-VN3205
A101507
DIODE S4 08
vn3205p-g
VN3205N8-G
diode sot-89 marking code S1
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Y2 transistor
Abstract: Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882
Text: >>JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD. >>Tel: 86-510-6852812*12 >>Fax: 86-510-6858792 >>http://www.cj-elec.com >>http://www.globalsources.com/cjet.co >>Email:huaxing20@hotmail.com huaxing20@sohu.com >> Huaxing Lee DIODES IN SOD-123
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huaxing20
OD-123
1N4148W
1N4448W
1N5711W*
1N6263W*
B0520LW
B0530W
B0540W
Y2 transistor
Transistor S8550 2TY
bq d882
transistor bc547 bk 045
transistor D882 datasheet
Z1 Transistor
TRANSISTOR MARK AQY
S8050 equivalent
K596-B
sot 89 D882
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Transistor S8550 2TY
Abstract: Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6
Text: DIODES IN SOD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W B5819W BAT42W BAT43W BAT46W* BAV16W BAV19W BAV20W BAV21W SD101AW* SD101BW* SD101CW* SD103AW SD103BW SD103CW PD VR V IFM(mA) IR( A) (mW) 350 75 350 75 250
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OD-123
1N4148W
1N4448W
1N5711W*
1N6263W*
B0520LW
B0530W
B0540W
B5817W
B5818W
Transistor S8550 2TY
Schottky barrier sot-23 Marking s4
sk 8050s
KL4 SOT-23
d882 to-92
BR S8050
bq d882
transistor D882 datasheet
S8050 equivalent
PCR100-6
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A10150
Abstract: TO243AA TP2522 TP2522N8-G TP2522ND A101507
Text: TP2522 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This
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TP2522
125pF
O-243AA
OT-89)
O-243,
A101507
A10150
TO243AA
TP2522
TP2522N8-G
TP2522ND
A101507
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TO-243AA
Abstract: TN2520N8-G TP2520 tp5cw jedec package TO-243AA
Text: TP2520 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This
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TP2520
125pF
O-243AA
OT-89)
O-243,
A101507
TO-243AA
TN2520N8-G
TP2520
tp5cw
jedec package TO-243AA
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TL4810a
Abstract: HV6810 HV6810PJ-G HV6810WG HV6810WG-G TL4810B UCN5810A
Text: HV6810 10-Channel Serial-Input Latched Display Driver Features General Description ► ► ► ► ► ► ► ► ► ► The HV6810 is a monolithic integrated circuit designed to drive a dot matrix or segmented vacuum fluorescent display VFD . These devices feature a serial data output to
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HV6810
10-Channel
HV6810
100mA
UCN5810A
TL4810A,
TL4810B
10-bit
MS-013,
DSFP-HV6810
TL4810a
HV6810PJ-G
HV6810WG
HV6810WG-G
TL4810B
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Untitled
Abstract: No abstract text available
Text: R R series Thermal Emission Microscope IAHEAI New High-sensitivity detector thermal detector InSb Motorized turret with objective lenses • Two objective lenses for analyzing thermal emissions • Three objective lenses for probing and laser scanning Thermal Emission Microscope
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B1201
SSMS0012E15
JUN/2015
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A1015
Abstract: A1015 gr A1015 Y transistor A1015 GR transistor a1015 br a1015 a1015 transistor A1015 PNP TRANSISTOR A1015 TO92
Text: Hcmam TO-92 Piasti A1015 Encapsulate Transistors TO-92 TRANSISTOR P N P FEATURES Power dissipation 1,EMITTER P CM • 0,4 Collecto cu ent W (Tamb=25’’C> 2.COLLECTOR lCM : -0.15 A Collecto -base voltage 3.BASE 1 2 3 • -50 V Ope ating and storage junction temperature range
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A1015
A1015 gr
A1015 Y
transistor A1015 GR
transistor a1015
br a1015
a1015 transistor
A1015 PNP TRANSISTOR
A1015 TO92
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A1015
Abstract: A1015 y A1015 PNP TRANSISTOR br a1015 pnp a1015
Text: M C C TO-92 Plastic-Encapsulate Transistors A1015 TRANSISTOR PNP FEATU R E S P cm; 0.4W (T a m b = 2 5 t) Icm: -0.15A /voltage V(BR)CBO: -5 0 V M S M M i a tofeltetoraga Junction temperature range Tj.Tstg: -55X2- to + 150°C ELECTRICAL CHARACTERISTICS (Tam b=25°C u n l e s s o t h e r w i s e
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A1015
-55X2-
A1015
A1015 y
A1015 PNP TRANSISTOR
br a1015
pnp a1015
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UMA1015AM
Abstract: rf power detector voltage doubler
Text: Philips Semiconductors Objective specification Low-power dual frequency synthesizer for radio communications U M A1015AM FEATURES GENERAL DESCRIPTION • Two fully programmable RF dividers up to 1.1 GHz The UMA1015AM is a low-power dual frequency synthesizer for radio communications which operates in
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UMA1015AM
711DB2fc.
UMA1015AM
rf power detector voltage doubler
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