Untitled
Abstract: No abstract text available
Text: TP2522 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This
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Original
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TP2522
125pF
DSFP-TP2522
B091408
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PDF
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Untitled
Abstract: No abstract text available
Text: TP2522 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This
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Original
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TP2522
125pF
200pF
TP2522
O-243AA
OT-89)
O-243,
DSFP-TP2522
B122707
|
PDF
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TP2522ND
Abstract: TP2522 TP2522N8-G
Text: TP2522 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This
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Original
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TP2522
125pF
DSFP-TP2522
B022309
TP2522ND
TP2522
TP2522N8-G
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PDF
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Untitled
Abstract: No abstract text available
Text: Supertex inc. TP2522 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ►► Low threshold -2.4V max. ►► High input impedance ►► Low input capacitance (125pF max.) ►► Fast switching speeds ►► Low on-resistance ►► Free from secondary breakdown
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Original
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TP2522
125pF
DSFP-TP2522
C081413
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PDF
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A10150
Abstract: TO243AA TP2522 TP2522N8-G TP2522ND A101507
Text: TP2522 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This
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Original
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TP2522
125pF
O-243AA
OT-89)
O-243,
A101507
A10150
TO243AA
TP2522
TP2522N8-G
TP2522ND
A101507
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PDF
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TP2520N8-G
Abstract: No abstract text available
Text: TP2520 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This
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Original
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TP2520
125pF
200pF
TP2520
O-243AA
OT-89)
O-243,
B122707
TP2520N8-G
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TP2522 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling
|
Original
|
TP2522
125pF
DSFP-TP2522
B022309
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Supertex inc. TP2520 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ►► Low threshold -2.4V max. ►► High input impedance ►► Low input capacitance (125pF max.) ►► Fast switching speeds ►► Low on-resistance ►► Free from secondary breakdown
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Original
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TP2520
125pF
C081413
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PDF
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TO-243AA
Abstract: TN2520N8-G TP2520 tp5cw jedec package TO-243AA
Text: TP2520 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This
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Original
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TP2520
125pF
O-243AA
OT-89)
O-243,
A101507
TO-243AA
TN2520N8-G
TP2520
tp5cw
jedec package TO-243AA
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TP2520 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling
|
Original
|
TP2520
125pF
B022309
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TP2520 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This
|
Original
|
TP2520
125pF
200pF
TP2520
O-243AA
OT-89)
O-243,
B122707
|
PDF
|
TP2520
Abstract: tp5cw TP5C
Text: TP2520 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This
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Original
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TP2520
125pF
B022309
TP2520
tp5cw
TP5C
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PDF
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b0914
Abstract: No abstract text available
Text: TP2520 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This
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Original
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TP2520
125pF
B091408
b0914
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PDF
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