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    TRANSISTOR Z4 J Search Results

    TRANSISTOR Z4 J Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR Z4 J Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor z9

    Abstract: transistor Z2 RT240PD cdma repeater circuit TRANSISTOR Z4 B 1449 transistor transistor z5 RT240 gsm wcdma repeater 1608 B 100NF
    Text: Preliminary 10W Power Transistor RT240PD Product Features Application • High Output Power P1dB = 40dBm Typ. @2.14GHz • High Efficiency • High Power Gain G1dB = 17dB(Typ.)@900MHz G1dB = 13dB(Typ.)@2.14GHz • High Linearity • Hermetically sealed package


    Original     		PDF RT240PD 40dBm 14GHz 900MHz IMT-2000 RT240PD IMT-2000, 14iminary transistor z9 transistor Z2 cdma repeater circuit TRANSISTOR Z4 B 1449 transistor transistor z5 RT240 gsm wcdma repeater 1608 B 100NF

    Untitled

    Abstract: No abstract text available
    Text: BLF6G21-10 Power LDMOS transistor Rev. 01 — 6 July 2009 Objective data sheet 1. Product profile 1.1 General description 10 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz Table 1. Typical performance IDq = 100 mA; Tcase = 25 °C in a common source class-AB production test circuit.


    Original     		PDF BLF6G21-10 BLF6G21-10

    MGU487

    Abstract: 200B BLA1011-2 NV SMD TRANSISTOR
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D438 BLA1011-2 Avionics LDMOS transistor Product specification Supersedes data of 2002 Jun 17 2002 Oct 02 Philips Semiconductors Product specification Avionics LDMOS transistor BLA1011-2 FEATURES PINNING - SOT538A • High power gain


    Original     		PDF M3D438 BLA1011-2 OT538A SCA74 613524/04/pp8 MGU487 200B BLA1011-2 NV SMD TRANSISTOR

    MCE021

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D438 BLF2043 UHF power LDMOS transistor Product specification Supersedes data of 2002 Jul 02 2002 Sep 10 Philips Semiconductors Product specification UHF power LDMOS transistor BLF2043 PINNING - SOT538A FEATURES • Easy power control


    Original     		PDF M3D438 BLF2043 SCA74 613524/05/pp12 MCE021

    transistor C456

    Abstract: microstripline FR4 AT-41511 4.1 amplifier circuit diagram 2907A PNP bipolar transistors microstripline 41511 FR4 epoxy dielectric constant 4.4 AT-41411 AT-41486
    Text: Two-Stage 800 – 1000 MHz Amplifier Using the AT-41511 Silicon Bipolar Transistor Application Note 1084 Introduction Circuit Design Commercial markets in the VHF through L band frequency range require low cost, high performance components. In many applications, such as cellular and


    Original     		PDF AT-41511 5964-3853E transistor C456 microstripline FR4 4.1 amplifier circuit diagram 2907A PNP bipolar transistors microstripline 41511 FR4 epoxy dielectric constant 4.4 AT-41411 AT-41486

    2907A PNP bipolar transistors

    Abstract: microstripline FR4 transistor C456 AT-41511 schematic power supply circuit diagram using ic 3 AT-41486 AT-41411 schematic power supply circuit diagram using ic AT41511 Transistor z1
    Text: Two-Stage 800 – 1000 MHz Amplifier Using the AT-41511 Silicon Bipolar Transistor Application Note 1084 Introduction Commercial markets in the VHF through L band frequency range require low cost, high performance components. In many applications, such as cellular


    Original     		PDF AT-41511 5964-3853E 2907A PNP bipolar transistors microstripline FR4 transistor C456 AT-41511 schematic power supply circuit diagram using ic 3 AT-41486 AT-41411 schematic power supply circuit diagram using ic AT41511 Transistor z1

    AT-41511

    Abstract: 2907A PNP bipolar transistors transistor C456 microstripline Transistor z1 2907A PNP bipolar transistors datasheet microstripline FR4 Catalog Bipolar Transistor schematic power supply circuit diagram using ic 3 AT-41411
    Text: hH Two-Stage 800 – 1000 MHz Amplifier Using the AT-41511 Silicon Bipolar Transistor Application Note 1084 Introduction Commercial markets in the VHF through L band frequency range require low cost, high performance components. In many applications, such as cellular


    Original     		PDF AT-41511 5964-3853E AT-41511 2907A PNP bipolar transistors transistor C456 microstripline Transistor z1 2907A PNP bipolar transistors datasheet microstripline FR4 Catalog Bipolar Transistor schematic power supply circuit diagram using ic 3 AT-41411

    TPIC5424L

    Abstract: No abstract text available
    Text: TPIC5424L H-BRIDGE LOGIC-LEVEL POWER DMOS ARRAY SLIS026A – JUNE 1994 – REVISED SEPTEMBER 1994 • • • • • Low rDS on . . . 0.4 Ω Typ High-Voltage Output . . . 60 V Pulsed Current . . . 3 A Per Channel Fast Commutation Speed Direct Logic-Level Interface


    Original     		PDF TPIC5424L SLIS026A TPIC5424L 16-pin 20-pin

    KSD5072

    Abstract: No abstract text available
    Text: , Line. TELEPHONE: 973 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. (212)227-6005 FAX: (973) 376-8960 Silicon NPN Power Transistor KSD5072 B DESCRIPTION • High Breakdown Voltage: VCBO= 1500V (Min) • High Switching Speed • High Reliability


    Original     		PDF KSD5072 KSD5072

    J555

    Abstract: No abstract text available
    Text: Preliminary Data Sheet July 2003 AGR19125E 125 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR19125E is a 125 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for


    Original     		PDF AGR19125E Hz--1990 AGR19125EU AGR19125EF DS01-215RFPP J555

    MRF393

    Abstract: No abstract text available
    Text: ioducti, One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. The RF Line NPN Silicon Push-Pull RF Power TVansistor MRF393 . . . designed primarily for wideband large-signal output and driver amplifier


    Original     		PDF MRF393 MRF393

    TRANSISTOR Z4

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Push-Pull RF Power Transistor MRF392 Designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range. • Specified 28 Volt, 400 MHz Characteristics —


    Original     		PDF MRF392 MRF392 TRANSISTOR Z4

    J307 FET

    Abstract: J307 transistor c35 equivalent IM335
    Text: Preliminary Data Sheet July 2003 AGR19180E 180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR19180E is a 180 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for


    Original     		PDF AGR19180E Hz--1990 AGR19180EU AGR19180EF Voltag48, DS02-377RFPP J307 FET J307 transistor c35 equivalent IM335

    transistor z5

    Abstract: 027w TRANSISTOR Z4 Transistor z1 10KW
    Text: 0912-7 7 Watts, 50 Volts, Pulsed Avionics 960 - 1215 MHz GENERAL DESCRIPTION The 0912-7 is a COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The transistor includes input prematch for broadband capability. The device has gold thinfilm metallization for proven highest MTTF. Low thermal resistance


    Original     		PDF 25oC2 12mfd, transistor z5 027w TRANSISTOR Z4 Transistor z1 10KW

    Transistor J182

    Abstract: No abstract text available
    Text: Preliminary Data Sheet July 2003 AGR19060E 60 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR19060E is a 60 W, 26 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for


    Original     		PDF AGR19060E Hz--1990 AGR19060EU AGR19060EF DS01-216RFPP Transistor J182

    transistor z5

    Abstract: erie redcap IC 2025 NPN TRANSISTOR Z4 RF push pull power amplifier TRANSISTOR Z4 MRF392 redcap 7w120 transistor D 716
    Text: Order this document by MRF392/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Push-Pull RF Power Transistor MRF392 Designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range. • Specified 28 Volt, 400 MHz Characteristics —


    Original     		PDF MRF392/D MRF392 MRF392 i1-44-844-8298 transistor z5 erie redcap IC 2025 NPN TRANSISTOR Z4 RF push pull power amplifier TRANSISTOR Z4 redcap 7w120 transistor D 716

    T491C

    Abstract: AGR19030XF 100B100JCA500X AGR19030EF JESD22-C101A j598 SEMICONDUCTOR J598 W1235
    Text: Preliminary Data Sheet June 2004 AGR19030EF 30 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19030EF is a 30 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—


    Original     		PDF AGR19030EF Hz--1990 AGR19030EF DS04-224RFPP DS04-158RFPP) T491C AGR19030XF 100B100JCA500X JESD22-C101A j598 SEMICONDUCTOR J598 W1235

    AGR19045XF

    Abstract: No abstract text available
    Text: Preliminary Data Sheet June 2004 AGR19045EF 45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19045EF is a 45 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for


    Original     		PDF AGR19045EF Hz--1990 AGR19045XF

    MRF321

    Abstract: ferroxcube 56-590-65
    Text: TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. The RF Line NPN Silicon MRF321 RF Power Transistor . . . designed primarily for wideband large-signal driver and predriver amplifier stages in 200-500 MHz frequency range.


    Original     		PDF MRF321 400MHz 1N4001 56-590-65/4B) VK200-19/4B MRF321 ferroxcube 56-590-65

    J600 transistor

    Abstract: No abstract text available
    Text: Preliminary Data Sheet June 2004 AGR19045EF 45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19045EF is a 45 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for


    Original     		PDF AGR19045EF Hz--1990 DS04-240RFPP DS04-077RFPP) J600 transistor

    z3 transistor

    Abstract: TRANSISTOR Z4 Z1 Transistor transistor z5 Transistor z1 transistor z3
    Text: 0912-25 25 Watts, 50 Volts, Pulsed Avionics 960 - 1215 MHz GENERAL DESCRIPTION The 0912-25 is a COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The device has gold thin-film metallization for proven highest MTTF. The transistor includes


    Original     		PDF 25oC2 100mil) z3 transistor TRANSISTOR Z4 Z1 Transistor transistor z5 Transistor z1 transistor z3

    AGRA10E

    Abstract: AGR045010 AGRA10EU JESD22-C101A 2743019446 tns capacitors
    Text: Preliminary Data Sheet January 2004 AGRA10E 10 W, 100 MHz—1.0 GHz, N-Channel E-Mode, Lateral MOSFET Introduction 865 MHz to 895 MHz The AGRA10E is a broadband general-purpose, highvoltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable


    Original     		PDF AGRA10E AGRA10E IS-95 C32/F, DS03-161RFPP DS03-038RFPP) AGR045010 AGRA10EU JESD22-C101A 2743019446 tns capacitors

    Untitled

    Abstract: No abstract text available
    Text: /= T * 7 J S G S -1 H 0 M S 0 N . M » l l L i g T O ( M [ ] S _S D 1 5 3 8 - 0 2 RF & MICROWAVE TRANSISTO R S AVIONICS APPLICATIONS • DESIGNED FOR HIGH POWER PULSED IFF, DME, TACAN APPLICATIONS ■ 200 WATTS (typ. IFF 1030 - 1090 MHz


    OCR Scan     		PDF SD1538-02

    pwmtov

    Abstract: No abstract text available
    Text: ¿ * = 7 S G /. M 7 S - T H O M S O » i L I § T [ j » D N SD1540 g I RF & MICROWAVE TR AN SISTO R S AVIONICS APPLICATIONS . DESIGNED FOR HIGH POWER PULSED IFF, DME, TACAN APPLICATIONS • 350 WATTS (typ. IFF 1030 ■ 1090 MHz . 300 WATTS (min.) DME 1025 - 1150 MHz


    OCR Scan     		PDF SD1540 SD1540 pwmtov