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Advanced Semiconductor Inc AGR19030EF RF MOSFET Transistors 930-960MHz 6Watt Gain 16dB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	AGR19030EF					1 $47.96 10 $40.75 100 $36.75 1000 $35.44 10000 $35.44	Get Quote

AGR19030EF Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Type	PDF
AGR19030EF		Agere Systems	MOSFET		Original	PDF
AGR19030EF		Agere Systems	30 W, 1930 MHz - 1990 MHz, PCS LDMOS RF Power Transistor		Original	PDF

AGR19030EF Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
T491C Abstract: AGR19030XF 100B100JCA500X AGR19030EF JESD22-C101A j598 SEMICONDUCTOR J598 W1235 Text: Preliminary Data Sheet June 2004 AGR19030EF 30 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19030EF is a 30 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—	Original	PDF	AGR19030EF Hz--1990 AGR19030EF DS04-224RFPP DS04-158RFPP) T491C AGR19030XF 100B100JCA500X JESD22-C101A j598 SEMICONDUCTOR J598 W1235
J56-1 Abstract: ep 55 transistor Text: AGR19030EF 30 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19030EF is a 30 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—	Original	PDF	AGR19030EF Hz--1990 J56-1 ep 55 transistor
AGR19030XF Abstract: 100B100JCA500X AGR19030EF JESD22-C101A Text: AGR19030EF 30 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19030EF is a 30 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—	Original	PDF	AGR19030EF Hz--1990 AGR19030EF AGR19030XF AGR18030F 12-digit AGR19030XF 100B100JCA500X JESD22-C101A
Untitled Abstract: No abstract text available Text: Preliminary Product Brief May 2003 AGR19030E 30 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19030E is a 30 W, 26 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for	Original	PDF	AGR19030E Hz--1990 AGR19030EU AGR19030EF PB03-111RFPP PB03-092RFPP)
CDM 82 Abstract: No abstract text available Text: Preliminary Product Brief April 2003 AGR19030E 30 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19030E is a 30 W, 26 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal	Original	PDF	AGR19030E Hz--1990 AGR19030EU AGR19030EF PB03-092RFPP PB03-066RFPP) CDM 82
j561 Abstract: T491C AGR19030XF 100B100JCA500X AGR19030E AGR19030EF AGR19030EU JESD22-C101A 100B100 DSA0020680 Text: Preliminary Data Sheet April 2004 AGR19030E 30 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19030E is a 30 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—	Original	PDF	AGR19030E Hz--1990 AGR19030E DS04-158RFPP DS04-076RFPP) j561 T491C AGR19030XF 100B100JCA500X AGR19030EF AGR19030EU JESD22-C101A 100B100 DSA0020680
AGRA10EM Abstract: APP550 APP550TM AGR09085EF APP550TM and APP530TM 400-kHz agra 30 TAAD08JU2 AGR09030EF AGR09030GUM Text: RF Power Transistor Line RF Power Environment Agere’s RF LDMOS transistors are used in wireless base stations to boost voice, data, and video signals in various frequency ranges. They are targeted for second-generation 2G , 2.5-generation (2.5G), and thirdgeneration (3G) base station	Original	PDF	CA03-005RFPP-7 CA03-005RFPP-6) AGRA10EM APP550 APP550TM AGR09085EF APP550TM and APP530TM 400-kHz agra 30 TAAD08JU2 AGR09030EF AGR09030GUM
Untitled Abstract: No abstract text available Text: Preliminary Product Brief November 2003 AGR19030E 30 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR19030E is a 30 W, 26 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for	Original	PDF	AGR19030E AGR19030E AGR19030EU AGR19030EF PB04-013RFPP PB03-111RFPP)
AGR19030XF Abstract: 100B100JCA500X AGR19030E AGR19030EF AGR19030EU JESD22-C101A Text: Preliminary Data Sheet March 2004 AGR19030E 30 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19030E is a 30 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—	Original	PDF	AGR19030E Hz--1990 AGR19030E DS04-076RFPP PB04-013RFPP) AGR19030XF 100B100JCA500X AGR19030EF AGR19030EU JESD22-C101A