N/A9M07
Abstract: No abstract text available
Text: Document Number: AFT09MS007N Rev. 0, 6/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor High Ruggedness N−Channel Enhancement−Mode Lateral MOSFET AFT09MS007NT1 Designed for handheld two−way radio applications with frequencies from
|
Original
|
PDF
|
AFT09MS007N
AFT09MS007NT1
N/A9M07
|
Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: AFT05MS031N Rev. 0, 6/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs AFT05MS031NR1 AFT05MS031GNR1 Designed for mobile two-way radio applications with frequencies from
|
Original
|
PDF
|
AFT05MS031N
AFT05MS031NR1
AFT05MS031GNR1
AFT05MS031NR1
|
atc 17-25
Abstract: AFT05MS031NR1 atc0805wl ATC600F241JT GRM21BR72A103KA01B J027
Text: Freescale Semiconductor Technical Data Document Number: AFT05MS031N Rev. 0, 5/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Designed for mobile two-way radio applications with frequencies from 136 to 520 MHz. The high gain, ruggedness and wideband performance of
|
Original
|
PDF
|
AFT05MS031N
AFT05MS031NR1
AFT05MS031GNR1
52ogo,
atc 17-25
atc0805wl
ATC600F241JT
GRM21BR72A103KA01B
J027
|
ATC600F470BT250XT
Abstract: ATC600F241JT250XT CWCR0805 0908SQ-27NGLC Z27 transistor
Text: Freescale Semiconductor Technical Data Document Number: AFT05MS031N Rev. 1, 4/2013 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Designed for mobile two-way radio applications with frequencies from 136 to 520 MHz. The high gain, ruggedness and broadband performance of
|
Original
|
PDF
|
AFT05MS031N
AFT05MS031NR1
AFT05MS031GNR1
DataAFT05MS031N
4/2013Semiconductor,
ATC600F470BT250XT
ATC600F241JT250XT
CWCR0805
0908SQ-27NGLC
Z27 transistor
|
ATC600F241JT
Abstract: GRM31CR61H106KA12L atc 17-25 transistor 62 Z27 transistor J103 transistor 3 pin AFT05 GRM31CR61H106K 0806SQ-5N5GLC GRM31CR61H106KA12
Text: Freescale Semiconductor Technical Data Document Number: AFT05MS031N Rev. 0, 6/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Designed for mobile two-way radio applications with frequencies from 136 to 520 MHz. The high gain, ruggedness and broadband performance of
|
Original
|
PDF
|
AFT05MS031N
AFT05MS031NR1
AFT05MS031GNR1
52ogo,
ATC600F241JT
GRM31CR61H106KA12L
atc 17-25
transistor 62
Z27 transistor
J103 transistor 3 pin
AFT05
GRM31CR61H106K
0806SQ-5N5GLC
GRM31CR61H106KA12
|
Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: AFT09MS031N Rev. 0, 5/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs AFT09MS031NR1 AFT09MS031GNR1 Designed for mobile two-way radio applications with frequencies from
|
Original
|
PDF
|
AFT09MS031N
AFT09MS031NR1
AFT09MS031GNR1
AFT09MS031NR1
|
GRM55DR61H106KA88B
Abstract: No abstract text available
Text: Document Number: MHT1000H Rev. 0, 5/2014 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET MHT1000HR5 RF power transistor suitable for industrial heating applications operating at 2450 MHz. Device is capable of both CW and pulse operation.
|
Original
|
PDF
|
MHT1000H
MHT1000HR5
GRM55DR61H106KA88B
|
ATC100B471JT200XT
Abstract: EB-38 651AT ATC100B181JT300XT ATC100B4R3CT500XT CDR33BX104AKWY MRFE6VS25N C5750KF1H226ZT Fair-Rite ATC MRFE6VS25NR1
Text: Freescale Semiconductor Technical Data Document Number: MRFE6VS25N Rev. 0, 6/2012 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET MRFE6VS25NR1 RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to
|
Original
|
PDF
|
MRFE6VS25N
MRFE6VS25NR1
MRFE6VS25N
ATC100B471JT200XT
EB-38
651AT
ATC100B181JT300XT
ATC100B4R3CT500XT
CDR33BX104AKWY
C5750KF1H226ZT
Fair-Rite ATC
MRFE6VS25NR1
|
Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRFE6VS25N Rev. 0, 6/2012 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET MRFE6VS25NR1 RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to
|
Original
|
PDF
|
MRFE6VS25N
MRFE6VS25NR1
25cale
|
AFT09MS031NR1
Abstract: Z11-Z16 GRM21BR72A103KA01B ATC100A220JT150XT transistor Z6 Coilcraft Design Tools
Text: Freescale Semiconductor Technical Data Document Number: AFT09MS031N Rev. 0, 5/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Designed for mobile two-way radio applications with frequencies from 764 to 941 MHz. The high gain, ruggedness and broadband performance of
|
Original
|
PDF
|
AFT09MS031N
O-270-2
AFT09MS031NR1
AFT09MS031NR1
AFT09MS031GNR1
Z11-Z16
GRM21BR72A103KA01B
ATC100A220JT150XT
transistor Z6
Coilcraft Design Tools
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF284/D SEMICONDUCTOR TECHNICAL DATA MRF284 MRF284SR1 The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from
|
Original
|
PDF
|
MRF284/D
MRF284
MRF284SR1
DEVICEMRF284/D
|
transistor equivalent table 557
Abstract: 21045F
Text: AGR18030EF 30 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18030EF is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication
|
Original
|
PDF
|
AGR18030EF
DS04-204RFPP
PB04-101RFPP)
transistor equivalent table 557
21045F
|
J133 mosfet transistor
Abstract: transistor 955 MOTOROLA
Text: MOTOROLA Order this document by MRF9002R2/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor Array MRF9002R2 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of this device make
|
Original
|
PDF
|
MRF9002R2/D
MRF9002R2
MRF9002R2
MRF9002R2/D
J133 mosfet transistor
transistor 955 MOTOROLA
|
J239
Abstract: motorola J122 A113 MRF9002R2 RO4350 mosfet j133 motorola rf Power Transistor j122 mosfet J104 MOSFET J239 mosfet transistor
Text: MOTOROLA Order this document by MRF9002R2/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF9002R2 RF Power Field Effect Transistor Array N–Channel Enhancement–Mode Lateral MOSFET 1.0 GHz, 2 W, 26 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFET
|
Original
|
PDF
|
MRF9002R2/D
MRF9002R2
J239
motorola J122
A113
MRF9002R2
RO4350
mosfet j133
motorola rf Power Transistor
j122 mosfet
J104 MOSFET
J239 mosfet transistor
|
|
AGR18030EF
Abstract: JESD22-C101A
Text: Preliminary Data Sheet November 2004 AGR18030EF 30 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18030EF is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication
|
Original
|
PDF
|
AGR18030EF
AGR18030EF
DS04-204RFPP
PB04-101RFPP)
JESD22-C101A
|
transistor B 764
Abstract: ATC600F150JT250XT 0051A
Text: Freescale Semiconductor Technical Data Document Number: AFT09MP055N Rev. 0, 7/2013 RF Power LDMOS Transistors AFT09MP055NR1 AFT09MP055GNR1 High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Designed for mobile two-way radio applications with frequencies from
|
Original
|
PDF
|
AFT09MP055N
AFT09MP055NR1
AFT09MP055GNR1
AFT09MP055NR1
transistor B 764
ATC600F150JT250XT
0051A
|
transistor c36
Abstract: J117 surface mount TRANSISTOR zener diode c25 c38 transistor c25 mosfet MOSFET c25 /c25 mosfet
Text: MOTOROLA Order this document by MRF1570T1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1570T1 is designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband
|
Original
|
PDF
|
MRF1570T1/D
MRF1570T1
MRF1570T1/D
transistor c36
J117 surface mount TRANSISTOR
zener diode c25
c38 transistor
c25 mosfet
MOSFET c25 /c25 mosfet
|
Z25 transistor
Abstract: Z27 transistor
Text: Document Number: MHT1001H Rev. 0, 5/2014 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET MHT1001HR5 RF power transistor suitable for industrial heating applications operating at 2450 MHz. Device is capable of both CW and pulse operation.
|
Original
|
PDF
|
MHT1001H
MHT1001HR5
Z25 transistor
Z27 transistor
|
J133 mosfet transistor
Abstract: ON SEMICONDUCTOR J122 MRF9002R2 transistor a113 a113 transistor marking transistor RF
Text: MRF9002R2 Rev. 5, 1/2005 Freescale Semiconductor Technical Data Will be replaced by MRF9002NT1 end of Q205. N suffix indicates 260°C reflow capable. The PFP - 16 package has had lead - free terminations from its initial release. MRF9002R2 RF Power Field Effect Transistor Array
|
Original
|
PDF
|
MRF9002NT1
MRF9002R2
MRF9002R2
J133 mosfet transistor
ON SEMICONDUCTOR J122
transistor a113
a113 transistor
marking transistor RF
|
369A-10
Abstract: MJD32 MOTOROLA motorola MOSFET 935 NIPPON CAPACITORS mrf284 power MJD31 MJD32 MRF284 MRF284S B6C1
Text: MOTOROLA Order this document by MRF284/D SEMICONDUCTOR TECHNICAL DATA MRF284 MRF284S The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from
|
Original
|
PDF
|
MRF284/D
MRF284
MRF284S
MRF284
DEVICEMRF284/D
369A-10
MJD32 MOTOROLA
motorola MOSFET 935
NIPPON CAPACITORS
mrf284 power
MJD31
MJD32
MRF284S
B6C1
|
MRF9002NR2
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF9002R2 Rev. 6, 7/2005 Will be replaced by MRF9002NR2 in Q305. N suffix indicates 260°C reflow capable. The PFP-16 package has had lead-free terminations from its initial release. MRF9002R2 RF Power Field Effect Transistor Array
|
Original
|
PDF
|
MRF9002R2
MRF9002NR2
PFP-16
|
power transistor unit j122
Abstract: MRF9002NR2
Text: Freescale Semiconductor Technical Data Document Number: MRF9002NR2 Rev. 7, 7/2005 RF Power Field Effect Transistor Array N -Channel Enhancement-Mode Lateral MOSFET MRF9002NR2 Designed for broadband commercial and industrial applications with frequencies to 1000 MHz. The high gain and broadband performance of this device
|
Original
|
PDF
|
MRF9002NR2
MRF9002NR2
power transistor unit j122
|
D260-4118-0000
Abstract: MRFE6VS25L MRFE6VS25GNR1 transistor J128 2422D 21-201-J ATC100B2R7BT500XT crcw12065k60f avx c0805c103k5rac MRFE6VS25NR1
Text: Freescale Semiconductor Technical Data Document Number: MRFE6VS25N Rev. 1, 12/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to
|
Original
|
PDF
|
MRFE6VS25N
MRFE6VS25NR1
MRFE6VS25GNR1
MRFE6VS25N
D260-4118-0000
MRFE6VS25L
MRFE6VS25GNR1
transistor J128
2422D
21-201-J
ATC100B2R7BT500XT
crcw12065k60f
avx c0805c103k5rac
|
transistor z14 L
Abstract: transistor z9 Transistor Z14
Text: GFCIOIOA GFCIOIOA G F CIOIOA 16-BIT BARREL SHIFTER GENERAL DESCRIPTION: THE GFCIOIOA MEGAFUNCTION PERFORMS » 16-BIT END-AROUND SHIFT, OR A BARREL SHIFT. THERE ARE FOUR CONTROL LINES SI, S2 , S4, AND SB TO DETERMINE HOW MANY PLACES TO THE LEFT THE 16-BIT INPOTS (R15 THROUGH RO) WILL BE SHIFTED AT THE OUTPUTS
|
OCR Scan
|
PDF
|
16-BIT
LL7000
LSA2000
R5R14
R13R12R11
R12R11
R15R14
R13R12
transistor z14 L
transistor z9
Transistor Z14
|