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    Untitled

    Abstract: No abstract text available
    Text: Document Number: AFT26P100−4WS Rev. 0, 5/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET This 22 watt symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous


    Original     		PDF AFT26P100â

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P9300H Rev. 1.1, 7/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P9300HR6 MRF8P9300HSR6 Designed for CDMA and multicarrier GSM base station applications with


    Original     		PDF MRF8P9300H MRF8P9300HR6 MRF8P9300HSR6 MRF8P9300HR6

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP100H Rev. 0, 5/2012 RF Power LDMOS Transistors MRFE6VP100HR5 MRFE6VP100HSR5 High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors designed for both narrowband and broadband ISM,


    Original     		PDF MRFE6VP100H MRFE6VP100HR5 MRFE6VP100HSR5 MRFE6VP100HR5

    NI-1230-4H

    Abstract: ATC100B2R1BT500XT NI-1230-4S MRF8P8300HS
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P8300H Rev. 1, 4/2013 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P8300HR6 MRF8P8300HSR6 Designed for W-CDMA and LTE base station applications with frequencies


    Original     		PDF MRF8P8300H MRF8P8300HR6 MRF8P8300HSR6 NI-1230-4H ATC100B2R1BT500XT NI-1230-4S MRF8P8300HS

    ATC100B390JT500XT

    Abstract: ATC100B200JT500XT ATC100B200 ATC100B4R7CT500X ATC100B100JT500X
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P9300H Rev. 1, 5/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P9300HR6 MRF8P9300HSR6 Designed for CDMA and multicarrier GSM base station applications with


    Original     		PDF MRF8P9300H MRF8P9300HR6 MRF8P9300HSR6 92ficers, MRF8P9300H ATC100B390JT500XT ATC100B200JT500XT ATC100B200 ATC100B4R7CT500X ATC100B100JT500X

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VS25L Rev. 0, 10/2012 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET MRFE6VS25LR5 RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to


    Original     		PDF MRFE6VS25L MRFE6VS25LR5

    k 2645 MOSFET

    Abstract: K 2645 transistor C1825C103J1RAC TRANSISTOR MOSFET 2645 J204 mosfet j142 transistor d 2645 p 01 k 2645 A114 C101
    Text: Freescale Semiconductor Technical Data Document Number: MRF6P27160H Rev. 2, 12/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 2600 to 2700 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications.


    Original     		PDF MRF6P27160H MRF6P27160HR6 k 2645 MOSFET K 2645 transistor C1825C103J1RAC TRANSISTOR MOSFET 2645 J204 mosfet j142 transistor d 2645 p 01 k 2645 A114 C101

    UT-90-25

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMRF1305H Rev. 0, 12/2013 RF Power LDMOS Transistors MMRF1305HR5 MMRF1305HSR5 High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors suitable for both narrowband and broadband CW or


    Original     		PDF MMRF1305H MMRF1305HR5 MMRF1305HSR5 MMRF1305HR5 UT-90-25

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMRF1020-04N Rev. 0, 2/2014 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs These 100 W symmetrical Doherty RF power LDMOS transistors are designed for cellular base station applications covering the frequency range


    Original     		PDF MMRF1020--04N MMRF1020-04NR3 MMRF1020-04GNR3

    Untitled

    Abstract: No abstract text available
    Text: Document Number: AFT26P100−4WS Rev. 1, 8/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET This 22 watt symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous


    Original     		PDF AFT26P100â

    D260-4118-0000

    Abstract: MRFE6VS25L MRFE6VS25GNR1 transistor J128 2422D 21-201-J ATC100B2R7BT500XT crcw12065k60f avx c0805c103k5rac MRFE6VS25NR1
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VS25N Rev. 1, 12/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to


    Original     		PDF MRFE6VS25N MRFE6VS25NR1 MRFE6VS25GNR1 MRFE6VS25N D260-4118-0000 MRFE6VS25L MRFE6VS25GNR1 transistor J128 2422D 21-201-J ATC100B2R7BT500XT crcw12065k60f avx c0805c103k5rac

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P8300H Rev. 0, 1/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P8300HR6 MRF8P8300HSR6 Designed for W-CDMA and LTE base station applications with frequencies


    Original     		PDF MRF8P8300H MRF8P8300HR6 MRF8P8300HSR6 MRF8P8300HR6

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MWE6IC9080N Rev. 0, 4/2010 RF LDMOS Wideband Integrated Power Amplifiers The MWE6IC9080N wideband integrated circuit is designed with on-chip matching that makes it usable from 865 to 960 MHz. This multi-stage


    Original     		PDF MWE6IC9080N MWE6IC9080N MWE6IC9080NR1 MWE6IC9080GNR1 MWE6IC9080NBR1 MWE6IC9080NR1 MWE6IC9080GNR1

    G2225X7R225KT3AB

    Abstract: m27500 transfer impedance
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP100H Rev. 0, 5/2012 RF Power LDMOS Transistors MRFE6VP100HR5 MRFE6VP100HSR5 High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors designed for both narrowband and broadband ISM,


    Original     		PDF MRFE6VP100H MRFE6VP100HR5 MRFE6VP100HSR5 MRFE6VP100HR5 G2225X7R225KT3AB m27500 transfer impedance

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMRF1304L Rev. 0, 12/2013 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET MMRF1304LR5 RF power transistor suitable for both narrowband and broadband CW or pulse applications operating at frequencies from 1.8 to 2000 MHz, such as


    Original     		PDF MMRF1304L MMRF1304LR5

    ATC100B120JT500XT

    Abstract: atc100b270 MRF9210R3 06035J nippon capacitors 2508051107Y0 3A412 rf push pull mosfet power amplifier MRF9210 ATC100B1
    Text: Freescale Semiconductor Technical Data Document Number: MRF9210 Rev. 6, 9/2008 RF Power Field Effect Transistor Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of this device make it ideal for large - signal, common source amplifier


    Original     		PDF MRF9210 MRF9210R3 ATC100B120JT500XT atc100b270 MRF9210R3 06035J nippon capacitors 2508051107Y0 3A412 rf push pull mosfet power amplifier MRF9210 ATC100B1

    J014

    Abstract: BLM21PG300SN1D
    Text: Document Number: MRF8S8260H Rev. 1, 2/2012 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 790 to 895 MHz. Can be used in Class AB and Class C for all typical cellular base


    Original     		PDF MRF8S8260H MRF8S8260HR3 MRF8S8260HSR3 MRF8S8260H J014 BLM21PG300SN1D

    atc100b270

    Abstract: No abstract text available
    Text: Document Number: MRF9210 Rev. 6, 9/2008 Freescale Semiconductor Technical Data RF Power Field Effect Transistor Designed for broadband commercial and industrial applications with fre- quencies from 865 to 895 MHz. The high gain and broadband performance of


    Original     		PDF MRF9210 IS-95 MRF9210R3 atc100b270

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRF8S8260H Rev. 1, 2/2012 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 790 to 895 MHz. Can be used in Class AB and Class C for all typical cellular base


    Original     		PDF MRF8S8260H MRF8S8260HR3 MRF8S8260HSR3

    ATC100B

    Abstract: ATC100B1R0JP500XT KME63VB471M MRF8P9300H AN1955 MRF8P9300HR6 MRF8P9300HSR6 ATC100B200JT500XT ATC100B0R8JP500XT
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P9300H Rev. 1.1, 7/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P9300HR6 MRF8P9300HSR6 Designed for CDMA and multicarrier GSM base station applications with


    Original     		PDF MRF8P9300H MRF8P9300HR6 MRF8P9300HSR6 MRF8P9300HR6 ATC100B ATC100B1R0JP500XT KME63VB471M MRF8P9300H AN1955 MRF8P9300HSR6 ATC100B200JT500XT ATC100B0R8JP500XT

    2508051107Y0

    Abstract: nippon capacitors 3A412 MRF9210 MRF9210R3 865 marking power amplifier ATC180R
    Text: Document Number: MRF9210 Rev. 6, 9/2008 Freescale Semiconductor Technical Data RF Power Field Effect Transistor Designed for broadband commercial and industrial applications with fre- quencies from 865 to 895 MHz. The high gain and broadband performance of


    Original     		PDF MRF9210 IS-95 MRF9210R3 2508051107Y0 nippon capacitors 3A412 MRF9210 MRF9210R3 865 marking power amplifier ATC180R

    ATC100B3R9CT500XT

    Abstract: BLM21PG300SN1D ATC100B430JT500X AN1955 ATC100B430JT500XT GRM55ER72A475KA01 C13-C28 465B-03
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S8260H Rev. 0, 1/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 790 to 895 MHz. Can be used in Class AB and Class C for all typical cellular base


    Original     		PDF MRF8S8260H MRF8S8260HR3 MRF8S8260HSR3 ATC100B3R9CT500XT BLM21PG300SN1D ATC100B430JT500X AN1955 ATC100B430JT500XT GRM55ER72A475KA01 C13-C28 465B-03

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMRF1304N Rev. 0, 12/2013 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors suitable for both narrowband and broadband CW or pulse applications operating at frequencies from 1.8 to 2000 MHz, such as


    Original     		PDF MMRF1304N MMRF1304NR1 MMRF1304GNR1 MMRF1304NR1

    M27500-16RC1509

    Abstract: ferronics 11-750-K 11-750-K 12-365-K UT-90-25 Micro-coax UT m27500-16 m27500 transfer impedance transformer mttf MRFE6VP100HR5
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP100H Rev. 0, 5/2012 RF Power LDMOS Transistors MRFE6VP100HR5 MRFE6VP100HSR5 High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors designed for both narrowband and broadband ISM,


    Original     		PDF MRFE6VP100H MRFE6VP100HR5 MRFE6VP100HSR5 MRFE6VP100H M27500-16RC1509 ferronics 11-750-K 11-750-K 12-365-K UT-90-25 Micro-coax UT m27500-16 m27500 transfer impedance transformer mttf